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3~
High Voltage Standard Rectifier Rectifier
VRRM = 2200 V
I DAV = 90 A
I FSM = 370 A
Part number
DNA90YA2200NA
Backside: isolated
3 2
IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130125a
Rectifier Ratings
Symbol Definition Conditions min. typ. max. Unit
VRSM max. non-repetitive reverse blocking voltage TVJ = 25°C 2300 V
VRRM max. repetitive reverse blocking voltage TVJ = 25°C 2200 V
IR reverse current, drain current VR = 2200 V TVJ = 25°C 100 µA
VR = 2200 V TVJ = 150°C 1.5 mA
VF forward voltage drop IF = 30 A TVJ = 25°C 1.23 V
IF = 90 A 1.70 V
IF = 30 A TVJ = 125 °C 1.21 V
IF = 90 A 1.85 V
I DAV bridge output current TC = 85°C T VJ = 150 °C 90 A
rectangular d=⅓
VF0 threshold voltage TVJ = 150 °C 0.86 V
for power loss calculation only
rF slope resistance 11.4 mΩ
R thJC thermal resistance junction to case 1.2 K/W
R thCH thermal resistance case to heatsink 0.10 K/W
Ptot total power dissipation TC = 25°C 100 W
I FSM max. forward surge current t = 10 ms; (50 Hz), sine TVJ = 45°C 370 A
t = 8,3 ms; (60 Hz), sine VR = 0 V 400 A
t = 10 ms; (50 Hz), sine TVJ = 150 °C 315 A
t = 8,3 ms; (60 Hz), sine VR = 0 V 340 A
I²t value for fusing t = 10 ms; (50 Hz), sine TVJ = 45°C 685 A²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 665 A²s
t = 10 ms; (50 Hz), sine TVJ = 150 °C 495 A²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 480 A²s
CJ junction capacitance VR = 700 V; f = 1 MHz TVJ = 25°C 7 pF
IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130125a
D = Diode
N = High Voltage Standard Rectifier
Logo abcde Part No. A
90
=
=
(>= 2000V)
Current Rating [A]
YYWW Z XXXXXX YA = Half 3~ Bridge, Common Anode
2200 = Reverse Voltage [V]
NA = SOT-227B (minibloc)
DateCode Assembly Code
Assembly Line
Ordering Part Number Marking on Product Delivery Mode Quantity Code No.
Standard DNA90YA2200NA DNA90YA2200NA Tube 10 513730
V0 Rectifier
I R0
IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130125a
3 2
IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130125a
Rectifier
120 300 103
TVJ = 150°C VR = 0 V
TVJ = 125°C
100 TVJ = 25°C
TVJ = 45°C
80 250 TVJ = 45°C
IF IFSM 2
It
60
[A] [A] 2
[A s] TVJ = 150°C
TVJ = 150°C
40 200
20
50 Hz, 80% VRRM
0 150 102
0.5 1.0 1.5 2.0 2.5 0.001 0.01 0.1 1 1 2 3 4 5 6 7 8 910
VF [V] t [s] t [ms]
2
Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 I t versus time per diode
voltage drop per diode
80
50 RthKA =
0.6 K/W 70 dc =
dc = 0.8 K/W 1
1 1.0 K/W 60 0.5
40
0.5 2.0 K/W 0.4
Ptot 0.4 4.0 K/W 50 0.33
0.33 8.0 K/W IF(AV)M 0.17
30 0.17 0.08
40
[W] 0.08
[A]
20 30
20
10
10
0 0
0 10 20 30 40 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
IF(AV)M [A] Tamb [°C] TC [°C]
Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Max. forward current versus
case temperature
1.6
1.2
Constants for ZthJC calculation:
ZthJC
i Rthi (K/W) ti (s)
0.8 1 0.06 0.0004
0.0
1 10 100 1000 10000
t [ms]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130125a