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KA5M0965Q
Fairchild Power Switch(SPS)

Features Description
• Precision fixed operating frequency (70kHz) The SPS product family is specially designed for an off-line
• Low start-up current(typ. 100uA) SMPS with minimal external components. The SPS consist
• Pulse by pulse current limiting of high voltage power SenseFET and current mode PWM
• Over Load protection IC. Included PWM controller features integrated fixed fre-
• Over current protection quency oscillator, under voltage lock-out, leading edge
• Over voltage protecton (Min. 25V) blanking, optimized gate turn-on/turn-off driver, thermal
• Internal thermal shutdown function shutdown protection, over voltage protection, and tempera-
• Under voltage lockout ture compensated precision current sources for loopcompen-
• Internal high voltage sense FET sation and fault protection circuitry. Compared to discrete
• Latch mode MOSFET and PWM controller or RCC solution, a SPS can
reduce total component count, design size, weight and at the
same time increase efficiency, productivity, and system reli-
ability. It has a basic platform well suited for cost-effective
design in either a flyback converter or a forward converter.

TO-3P-5L

1. DRAIN 2. GND 3. VCC 4. FB 5. S/S

Internal Block Diagram

Vcc Drain
3 1

OVP UVLO
+ INTERNAL
OVP-out Vref BIAS
27V - VOLTAGE
V CC V REF 15V/9V Good Logic LIMIT Sense
CIRCUIT
5uA 1mA FET
CLK
OSC
Feedback 4 14V
2.5R S Q
Soft Start 5 -
LEB R
R +
5V
+
VO F F S E T
7.5V - O LP VS

TSD
(TJ =150℃) Rsense
S
OVP-out
(VCC =27V) Power-on Reset
Q 2 GND
/Auto-restart R
OCL
(VS=1.4V) Shutdown ※ LEB : Leading Edge Blanking
Latch ※ OCL : Over Current Limit

Rev.1.0.1
©2001 Fairchild Semiconductor Corporation
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KA5M0965Q

Absolute Maximum Ratings

Characteristic Symbol Value Unit

(1) VD,MAX
Maximum Drain voltage 650 V
Drain-Gate voltage (RGS=1MΩ) VDGR 650 V
Gate-source (GND) voltage VGS ±30 V
Drain current pulsed (2) IDM 36.0 ADC
(3) EAS
Single pulsed avalanche energy 950 mJ
Continuous drain current (TC=25°C) ID 9.0 ADC
Continuous drain current (TC=100°C) ID 5.8 ADC
Maximum Supply voltage VCC,MAX 30 V
Input voltage range VFB −0.3 to VSD V
PD (watt H/S) 170 W
Total power dissipation
Derating 1.33 W/°C
Operating ambient temperature TA −25 to +85 °C
Storage temperature TSTG −55 to +150 °C

Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=20mH, VDD=50V, RG=27Ω, starting Tj=25°C

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KA5M0965Q

Electrical Characteristics (SFET part)

(Ta = 25°C unless otherwise specified)

Characteristic Symbol Test condition Min. Typ. Max. Unit

Drain-source breakdown voltage BVDSS VGS=0V, ID=50µA 650 - - V
VDS=Max., Rating,
- - 50 µA
VGS=0V
Zero gate voltage drain current IDSS
VDS=0.8Max., Rating,
- - 200 mA
VGS=0V, TC=125°C
Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=4.5A - 0.96 1.2 W
Forward transconductance (note) gfs VDS=50V, ID=4.5A 5.0 - - S
Input capacitance Ciss - 1200 -
VGS=0V, VDS=25V,
Output capacitance Coss - 135 - pF
f=1MHz
Reverse transfer capacitance Crss - 25 -
Turn on delay time td(on) VDD=0.5BVDSS, ID=9.0A - 25 60
Rise time tr (MOSFET switching - 75 160
Turn off delay time td(off) time are essentially - 130 270 nS
independent of
Fall time tf operating temperature) - 70 150
Total gate charge
Qg - 45 60
(gate-source+gate-drain) VGS=10V, ID=9.0A,
nC
Gate-source charge Qgs VDS=0.8BVDSS - 8 -
Gate-drain (Miller) charge Qgd - 22 -

Note:
Pulse test: Pulse width < 300µS, duty < 2%
1
S = ----
R

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KA5M0965Q

Electrical Charcteristics (SFET part) (Continued)

(Ta = 25°C unless otherwise specified)

Characteristic Symbol Test condition Min. Typ. Max. Unit

UVLO SECTION
Start threshold voltage VSTART - 8.4 9 9.6 V
Stop threshold voltage VSTOP After turn on 14 15 16 V
OSCILLATOR SECTION
Initial accuracy FOSC Ta=25°C 61 67 73 kHz
Frequency change with temperature (2) - −25°C≤Ta≤+85°C - ±5 ±10 %
Maximum duty cycle Dmax - 74 77 80 %
FEEDBACK SECTION
Feedback source current IFB Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA
Shutdown Feedback voltage VSD Vfb>6.5V 6.9 7.5 8.1 V
Shutdown delay current Idelay Ta=25°C, 5V≤Vfb≤VSD 4 5 6 µA
SOFT START SECTION
Soft Start Voltage VSS VFB =2V 4.7 5.0 5.3 V
Soft Start Current ISS Sync & S/S=GND 0.8 1.0 1.2 mA
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit IOVER Max. inductor current 5.28 6.00 6.72 A
PROTECTION SECTION
Thermal shutdown temperature (Tj) (1) TSD - 140 160 - °C
Over voltage protection voltage VOVP VCC>24V 25 27 29 V
TOTAL DEVICE SECTION
Start Up current ISTART VCC=14V - 0.1 0.17 mA
Operating supply current (control part only) IOP VCC<28 - 7 12 mA

NOTE:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
3. These parameters are indicated Inductor current.

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KA5M0965Q

Typical Performance Characteristics

VGS
Top : 15 V
10 V
1
8.0 V 10
1
10 7.5 V
ID , Drain Current [A]

ID , Drain Current [A]

7.0 V
6.5 V 150℃
6.0 V
5.5 V
25℃
Bottom : 5.0 V
0
10 0 -55℃
10

※ Note : ※ Note
-1 1. 250μ s Pulse Test 1. VDS = 50V
10 2. T C = 25℃ 2. 250μ s Pulse Test
-1
-1 0 1 10
10 10 10 2 4 6 8 10
VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]

Figure 1. Output Characteristics Figure 2. Thansfer Characteristics

1.3

IDR , Reverse Drain Current [A]

Drain-Source On-Resistance

1
10
1.2

VGS = 10V
RDS(on) , [Ω ]

1.1
VGS = 20V
0
1.0 10

150℃ 25℃
0.9 ※ Note :
1. VGS = 0V
2. 250μ s Pulse Test

-1
0.8 10
0 2 4 6 8 10 12 14 16 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID , Drain Current [A] VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage

3000 12
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd V DS = 120V
2500 10
VGS, Gate-Source Voltage [V]

V DS = 300V

Ciss V DS = 480V
Capacitances [pF]

2000 8

1500 Coss 6

1000 ※ Note ; 4
Crss
1. V GS = 0 V
2. f = 1 MHz
500 2

※ Note : ID = 8.5 A

0 0
-1 0 1
10 10 10 0 5 10 15 20 25 30 35 40 45

V DS , Drain-Source Voltage [V] Q G, Total Gate Charge [nC]

Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage

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KA5M0965Q

Typical Performance Characteristics (Continued)

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0
0.9 ※ Note :
1. V GS = 0 V
※ Note :
2. I D = 250 μ A 0.5
1. V G S = 10 V
2. I D = 6.0 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature

10
2
10 Operation in This Area
is Limited by R DS(on)

8
10 µs
ID, Drain Current [A]

ID, Drain Current [A]

100 µs
1
10 1 ms 6
10 ms
DC
4
0
10
※ Notes :
1. T C = 25 C
o 2
o
2. T J = 150 C
3. Single Pulse
-1
10 0
0 1 2 3
10 10 10 10 25 50 75 100 125 150

V DS , Drain-Source Voltage [V] T C, Case Temperature [℃]

Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature
( t) , T h e rm a l R e s p o n s e

0
10

D = 0 .5

0 .2
-1
10
0 .1

0 .0 5

0 .0 2
JC

0 .0 1 ※ N o te s :
1 . Z θ JC( t) = 0 .7 5 ℃ /W M a x .
θ

s in g le p u ls e
Z

-2
10 2 . D u ty F a c to r , D = t1/t2
3 . T J M - T C = P D M * Z θ J C( t )

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ]

Figure 11. Thermal Response

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KA5M0965Q

typical performance characteristics (control part)

(These characteristic graphs are normalized at Ta = 25°C)

Fig.1 Operating Frequency Fig.2 Feedback Source Current

1.2 1.2
1.15 1.15
1.1 1.1
1.05 1.05
Fosc 1 Ifb 1
0.95 0.95
0.9 0.9
0.85 0.85
0.8 0.8
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150

Figure 1. Operating Frequency Figure 2. Feedback Source Current

Fig.3 Operating Current Fig.4 Max Inductor Current

1.2 1.1
1.15 1.05
1.1
1.05 Iover 1
Ipeak
Iop 1 0.95
0.95 0.9
0.9
0.85 0.85
0.8 0.8
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150

Figure 3. Operating Supply Current Figure 4. Peak Current Limit

Fig.5 Start up Current Fig.6 Start Threshold Voltage

1.5 1.15
1.3 1.1
1.05
1.1
Istart Vstart 1
0.9
0.95
0.7 0.9
0.5 0.85
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150

Figure 5. Start up Current Figure 6. Start Threshold Voltage

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KA5M0965Q

typical performance characteristics (continued)

(These characteristic graphs are normalized at Ta = 25°C)

Fig.7 Stop Threshold Voltage Fig.8 Maximum Duty Cycle

1.15 1.15
1.1 1.1
1.05 1.05
Vstop 1 Dmax 1
0.95 0.95
0.9 0.9
0.85 0.85
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150

Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle

Fig.9 Vcc Zener Voltage Fig.10 Shutdown Feedback Voltage

1.2 1.15
1.15 1.1
1.1
1.05 1.05
Vz 1 Vsd 1
0.95 0.95
0.9
0.85 0.9
0.8 0.85
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150

Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage

Fig.11 Shutdown Delay Current Fig.12 Over Voltage Protection

1.2 1.15
1.15
1.1
1.1
1.05 1.05
Idelay 1 Vovp 1
0.95 0.95
0.9
0.85 0.9
0.8 0.85
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150

Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection

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KA5M0965Q

typical performance characteristics (continued)

(These characteristic graphs are normalized at Ta = 25°C)

Fig.13 Soft Start Voltage Fig.14 Drain Source Turn-on

1.15 Resistance
1.1 2.5
1.05 2
Vss 1 1.5
0.95 Rdson
( )1
0.9 0.5
0.85 0
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150

Figure13. Soft Start Voltage Figure 14. Static Drain-Source on Resistance

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KA5M0965Q

Package Dimensions

TO-3P-5L

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KA5M0965Q

Package Dimensions (Continued)

TO-3P-5L (Forming)

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KA5M0965Q

Ordering Information
Product Number Package Rating Operating Temperature
KA5M0965Q-TU TO-3P-5L
650V, 9A -25°°C to +85°°C
KA5M0965Q-YDTU TO-3P-5L(Forming)
TU : Non Forming Type
YDTU : Forming Type

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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, and (c) whose failure to reasonably expected to cause the failure of the life support
perform when properly used in accordance with device or system, or to affect its safety or effectiveness.
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.

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 2001 Fairchild Semiconductor Corporation