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oa Uuit- mean ap LASER. a L bigut A Amplification. by Ss itauctated. E fyuaassions of ® Rodiatlou. Charactertstie of Laser Ligus-; + Hiquir degree, oF moenich mmatic! Word Pura. PalenwseZ. ° Tae beam & uigeey Aeuee + Bear > umnide Hf -2 Lut Sry ine tae ec tious. + Laser light Gs hugity ordewtd of We Con § its Coherent. a Thiemactsion of material caf. Tadiation + - DAbsoxption of Radiation s LF orm atom ‘nibiatty to He lower energ Stole Ex 5 tt ‘com be Toised to the highen enewy State E,y the absorption \OF a photory. of energy NV: Tals do bnnwn od absoxption of Tadjation + ® Spbntorneous Ereiissiod. i Upp EP om_arem is lees f ° come don. ay Pais ta Koon Ob of energy ho. Emission: ys Tafs is the nafurel cadio ation. decay pasti : te tok ts inherent inal exited oar ° ae = L materials. Howenet » tals to not atvay icon, | o - \o 7 i @ Stimulated Emission omd Poputotion Torersion: \ ate in Ae ground Shote._ getareals trols greater UxdI0 ee i state, Fils us fmpwo) ao NexMel population. Bub & ick. te Number of afoms in state i. greattiir thaw. that of _ lower energy state Is “known as population ali versfoc Te equilibriam the A igen enengt dt in comin photon stim tates es Exansition te the lower skate omd produces ow Second photon oF Same ene for stimulated interstan omission oe is the precondition for tte 1) 1M_o laser, | Components of Lasens i “7 Active system / Purepi Gain enediuens | Tots ta titan By stena, vin alu die Hae, pop: tal ners Be | Lio bo be achéPrect is cote ackive system on et at | gafn_macdivan for a_Lasem, if 2a: ee ay : ee Ee @ Puroping 2 Se BY Tht mettiod of noisin Unelmelecules aie ° | toeim lower energy —s ee Stoke ae | ging some_eaae ‘i h_@ duitabte medium ee | ee LUWH os OPbical er ing ee —— @ optical Resonator / Coy’ ity (feedback 1 AU wv Tn Lose, gale medium tsenctesed ia —— _|_optital Resoug torr taaiaalle a f 1 farallel Surfaces ene Tephec ovnd tue. ot ge Eo te 4 Aa’ | proces. cochfrctentcs* Nab oe Ni GO) 4E Bin N ucvyat - x Nap 2 Agta Osea Nese & Nidt(Wbe Nst = Ba, Ni UCQDAE = ——@ + B,,N, aly) AE A,N2 Dt (BN: =8., Ni) ee bzmann_Lawo, ++ eT EF {32 0) oe = UE E Genet 1) : ade smbive ® i ca( env KT) u Eyuating. @_a Owe will gee —— Ast _ air? i = = he on tae mateatal ; Depending pours {tt lonez?. aro. | @ Solid state lores. lo Liquid state lorem’. | @ Gor stoke loses. i a @ Semiconductor larerts EO_ovny _bjpe. of laren we will olsorrds— 1. Gaining medium [works ug material + 2. Pumping / excitattow, Sourte- one 3. optical peedback outs 4. Bnergy level diagrarn. * ~. ° Ru by Loser ® Gaiuiug medium + Rudy losex io mode upc crystal 2 do_eonyatel of “Al.03 in colsch. 053+ tym 00 ifppurity so that Someok the pist aespomsible fon lowe action, Crystal 1s 'n +00 fosrn oF eMtl [ou of tee end ig eee ek echve, 4 | @knecgy | erel_diggsaens = pie ee a Non

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