For similar carrier and modulating signals, the line closed

current used in CSI is_____________? C. It will rotate at dangerously high speed

0 D. None of these
A. Identical to line voltage in a VSI
B. Identical to line current in VSI The power demand can be estimated approximately
C. Identical to phase voltage in VSI by____________?
D. Identical to phase voltage in CSI 0
A. Load survey method
During the commutation period in 3 phase converter, B. Mathematical method
overlap time is____________? C. Statistical method
0 D. Economic parameters
A. Dependent on the load current
B. Dependent on the voltage Power electronics essentially deals with control of a.c.
C. Dependent on both the load current and load power at____________?
voltage behind the short circuit current 0
D. Independent on both the load current and load voltage A. Frequencies above 20 kHz
B. Frequencies above 1000 kHz
The effects of EMI can be reduced by_____________? C. Frequencies less than 10 Hz
0 D. 50 Hz frequency
A. Suppressing emissions
B. Reducing the efficiency of the coupling path In a push – pull converter, the filter capacitor can be
C. Reducing the susceptibility of the receptor obtained as____________?
D. All of these 0
A. Cmin = V / ( Vr L f2 )
An SCR is made up of silicon because_____________? B. Cmin= ( 1 – D ) V / ( Vr L f2 )
0 C. Cmin= ( 1 – 2 D ) V / 32 ( Vr L f2 )
A. silicon has large leakage current than germanium D. Cmin= ( 1 – 2 D ) V / 42 ( Vr L f2 )
B. silicon has small leakage current than germanium
C. silicon has small leakage voltage than germanium MOSFET stands for______________?
D. silicon has large leakage voltage than germanium 0
A. Metal – oxide semiconductor field effect transistor
AC power in a load can be controlled by B. Molybdenum – oxide semiconductor field effect
using_____________? transistor
0 C. Metal – oxide silicon field effect transistor
A. two SCR’s in parallel opposition D. Metal – oxide semiconductor field effect transmitter
B. two SCR’s in series
C. three SCR’s in series In a flyback converter, the inductor of the buck-boost
D. four SCR’s in series converter has been replaced by a_____________?
0
The switching function of semiconductor devices can A. Flyback capacitor
be characterized with____________? B. Flyback resistor
0 C. Flyback transformer
A. Duty ratio only D. Flyback transistor
B. Frequency only
C. Duty ratio and frequency Advantages of Cuk converter is / are_____________?
D. Duty ratio, frequency and time delay 0
A. Large number of reactive component
Electrical power output in a D.C. generator is equal B. Low stress on switch
to_____________? C. Low stress on capacitor
0 D. None of these
A. Electrical power developed in armature – copper
losses A MOSFET, for its conduction uses_____________?
B. Mechanical power input – iron and friction losses 0
C. Electrical power developed in armature – iron and A. Only minority carriers
copper losses B. Only majority carriers
D. Mechanical power input – iron and friction losses – C. Both minority and majority carriers
copper losses D. None of these

If a shunt motor is started with its field winding open An RC snubber network used in BJT__________?
then___________? 0
0 A. Divert the collector current during turn – off
A. It will rotate at the same speed as that with its field B. Improves the reverse bias safe operating area
winding closed C. Dissipates a fair amount of switching power
B. It will rotate at less speed as that with its field winding D. All of these
The ac output voltage waveform of VSI and AC If all the SCR’s of 3 phase PAC is replaced by diodes,
output current waveform of CSI respectively is they would be triggered_____________?
composed of___________? 0
0 A. 120 degree after the zero crossing of the
A. High dv / dt, low di / dt corresponding line voltages
B. Low dv / dt, low di / dt B. 60 degree after the zero crossing of the
C. Low dv / dt, high di / dt corresponding line voltages
D. High dv / dt, high di / dt C. 120 degree before the zero crossing of the
corresponding line voltages
If energy is taken from the AC side of the inverter D. 60 degree before the zero crossing of the
and sends it back into the DC side, then it is known corresponding line voltages
as___________?
0 The ability of an electronic system to function
A. Motoring mode operation properly in its intended electromagnetic environment
B. Braking mode operation and should not be a source of pollution to that
C. Regenerative mode operation electromagnetic environment is known
D. None of these as____________?
0
A combination of synchronized leading edge and A. Susceptibility
trailing edge modulation has also been used to control B. Emission
a____________? C. Interference
0 D. Electromagnetic compatibility
A. Boost single – phase power factor converter
B. A buck dc – dc converter to reduce ripple in the The opposite of susceptibility is___________?
intermediate dc bus capacitor 0
C. Both A. and B. A. Immunity
D. None f these B. Emission
C. Interference
Regulator sampling PWM is usually used D. Electromagnetic compatibility
in___________?
0 The output current in PWM DC – DC converters is
A. High power inverters equal to___________?
B. Rectifiers 0
C. Low power inverters A. Average value of the output inductor current
D. Only A. and B. B. Product of an average inductor current and a function
of duty ratio
In a 3 phase VSI SPWM to use a single carrier signal C. Either A. or B.
and preserve the features of PWM technique, the D. None of these
normalized carrier frequency should
be____________? A step – down choppers can be used in___________?
0 0
A. Multiple of two A. Electric traction
B. Odd multiple of three B. Electric vehicles
C. Odd multiple of five C. Machine tools
D. Odd multiple of seven D. All of these

In square wave operation mode of 3 phase VSI, the In a lossless inverter, the average power absorbed in
VSI one period by the load must be__________?
0 0
A. Can control the load voltage A. Equal to the average power supplied by the dc
B. Cannot control the load voltage source
C. Cannot control the load voltage except by means of B. Greater than the average power supplied by the dc
dc link voltage source
D. Cannot control the load voltage except by means of dc C. Lesser than the average power supplied by the dc
link current source
D. Equal to the average power supplied by the ac source
For commutation in three phase PAC, normally
balanced three phase voltages VR, VY and VB are The ac voltage controller can be used for
connected to the three legs of the converter ___________?
via______________? 0
0 A. Lighting and heating control
A. Three inductances B. On – line transformer tap changing
B. Three capacitances C. Soft starting
C. Three resistance D. All of these
D. Three transistors
In a full bridge VSI, in order to avoid the short circuit C. Constant function
across the DC bus and the undefined AC output D. None of these
voltage condition, the modulating technique should
ensure that___________? If the firing angle becomes negative, then the rectifier
0 begins to work as_______________?
A. Top switch of each leg is on at any instant 0
B. Bottom switch of each leg is on at any instant A. A rectifier
C. Either A. or B. B. An inverter
D. None of these C. A chopper
D. A regulator
The phase angle of gate signal in TRIAC can be
shifted by using_____________? In variable frequency, PWM gain
0 0
A. A capacitor A. Phase lead helps to increase the phase margin of
B. A variable resistor the control loop
C. An inductor B. Phase lag helps to increase the phase margin of the
D. Only (a) and (b) control loop
C. Phase lead helps to decrease the phase margin of the
In the SPWM, the modulating signal is___________? control loop
0 D. Phase lag helps to decrease the phase margin of the
A. Square control loop
B. Sinusoidal
C. Triangular
D. Saw – tooth In a 3 phase half wave rectifier, when firing angle is
less than 90 degree, then the average dc output
A TRIAC can be turned on with______________? voltage becomes__________________?
0 0
A. Positive voltage at the gate terminal A. Positive
B. Negative voltage at the gate terminal B. Negative
C. Either (a) or (b) C. Zero
D. None of these D. None of these

The transfer function of PWM is generally developed Transformer utilization factor is a measure of the
in______________? merit of a rectifier circuit. It is the ratio
0 of_______________?
A. Time domain 0
B. Frequency domain A. AC input power to the transformer volt – amp rating
C. Either A. or B. required by secondary
D. None of these B. AC input power to the transformer volt – amp rating
required by primary
DIAC and TRIAC both are semiconductors devices C. DC output power to the transformer volt – amp
and conduct in____________________? rating required by secondary
0 D. DC output power to the transformer volt – amp rating
A. DIAC conducts in forward direction and TRIAC required by primary
conducts in reverse direction
B. Both conducts in forward direction A carrier based PWM technique in CSI is composed
C. Both conducts in reverse direction of____________?
D. Both conducts in either direction 0
A. A switching pulse generator and a shorting pulse
The Graetz bridge makes excellent use of generator
______________? B. A shorting pulse distributor
0 C. A switching and shorting pulse combination
A. Current transformer D. All of these
B. Potential transformer
C. Power transformer In a square – wave operation of 3 phase CSIs, the
D. SCR power values are on for___________?
0
In constant frequency PWM, at perturbation the A. 60 degree
amplitude of the sinusoidal component is B. 90 degree
a___________? C. 120 degree
0 D. 150 degree
A. Linear function
B. Non linear function Ripple factor is the ratio of______________________?
0
A. Rms value of the ac component of load voltage to C. holding current
the dc voltage D. latching current
B. Average value of the ac component of load voltage to
the peak value of voltage A crowbar is a circuit which is used to protect
C. Average value of the dc component of load voltage to a_____________?
the ac voltage 0
D. Peak value of the dc component of load voltage to the A. voltage sensitive load from excessive dc power
ac voltage supply output voltages
B. current sensitive load from excessive dc power supply
Form factor of a rectifier is the ratio of output voltages
______________? C. voltage sensitive load from excessive ac power supply
0 output voltages
A. Root mean square value of voltage and current to its D. current sensitive load from excessive ac power supply
peak value output voltages
B. Root mean square value of voltage and current to
its average value Bidirectional semiconductor device is___________?
C. Average value of current and voltage to its root mean 0
square value A. Diode
D. Peak value of current and voltage to its root mean B. BJT
square value C. SCR
D. TRIAC
Silicon controlled rectifier can be turned
on____________? A full wave rectifier with resistive load
0 produces___________?
A. By applying a gate pulse and turned off only when 0
current becomes zero A. Second harmonic
B. And turned off by applying gate pulse B. Third harmonic
C. By applying a gate pulse and turned off by removing C. Fifth harmonic
the gate pulse D. Do not produce harmonics
D. By making current non zero and turned off by making
current zero
An ideal diode is___________?
0
TRIAC is a semiconductor power electronic device A. Unidirectional
which contains____________? B. Bidirectional
0 C. Fixed voltage polarity
A. Two SCR’s connected in reverse parallel D. Only (a) and (c)
B. Two SCR’s connected in parallel
C. Two SCR’s connected in series
D. Two BJT’s connected in series The input current waveform of a bridge controlled
rectifier when the load is perfectly filtered
is___________?
The curve between V and I of SCR when anode is 0
positive w.r.t cathode and when anode is negative A. Sine wave
w.r.t cathode are known as_____________________? B. Square wave
0 C. Saw – tooth wave
A. both as forward characteristics D. Trapezoidal wave
B. both as reverse characteristics
C. former as forward characteristics and later as
reverse characteristics The IGBT resulted in higher switching speed and
D. former as reverse characteristics and later as forward lower energy losses. It can be used for___________?
characteristics 0
A. Uninterruptible power supplies
B. Induction heating system
An SCR can be used___________? C. Constant voltage and frequency power supplies
0 D. All of these
A. as static conductor
B. for power control
C. for speed control of dc shunt motor The advantage of using free – wheeling diode in half
D. All of these controlled bridge converter is that
0
A. There is always a path for the dc current
With gate open, the maximum anode current at which independent of the ac line
SCR is turned off from ON condition is B. There is always a path for the ac current independent
called____________? of the ac line
0 C. There is always a path for the dc current dependent of
A. breakdown voltage the ac line
B. peak reverse voltage
D. There is always a path for the ac current independent A. Current controlled unipolar device
of the ac line B. Voltage controlled unipolar device
C. Current controlled bipolar device
To detect an over – current fault condition, the most D. Voltage controlled bipolar device
reliable method is to connect a_____________?
0 In dual converters________________?
A. Current sensor across IGBT 0
B. Voltage sensor across IGBT A. Both rectifiers provides positive current to the load
C. Current sensor in series with IGBT B. Both rectifiers provide negative current to the load
D. Voltage sensor in series with IGBT C. One rectifiers provide positive current to the load and
the other negative current
Harmonics in 3 phase inverters can be reduced by D. One rectifier provide positive current to the source
using___________? and the other negative current to the load
0
A. Passive filter The conduction losses in IGBT is____________?
B. Active filter 0
C. Both passive and active filters A. More than that of MOSFET
D. None of these B. Lower than that of MOSFET
C. Equal to that of MOSFET
The on – state voltage drop of IGBT consists D. Equal to that of BJT
of__________?
0 For a buck converter to reduce the conduction losses
A. Drop across the collector junction in diode
B. Drop across the drift region 0
C. Drop across MOSFET portion A. A high on – resistance switch can be added in parallel
D. All of these B. A low on – resistance switch can be added in parallel
C. A high on – resistance switch can be added in series
The most suited gate pulses given to the AC regulator D. A low on – resistance switch can be added in series
with R – L load can be in the form of____________?
0 Advantages of HVDC transmission over AC system is
A. Continuous signal / are____________?
B. Large isolating pulse transformer 0
C. A train of pulses a. Reversal of power can be controlled by firing angle
D. None of these b. Very good dynamic behavior
c. They can link two AC system operating
The maximum firing angle in the half wave controlled unsynchronized
regulator is_____________? d. All of these
0
A. 180 degree For bidirectional operation of
B. 190 degree converters____________?
C. 200 degree 0
D. 210 degree A. A parallel combination of controllable switch and a
diode is used
With increase in firing angle, B. A parallel combination of controllable switch and
0 capacitor is used
A. Both harmonic distortion and quality of input current C. A series combination of controllable switch and a
increases diode is used
B. Harmonic distortion increases and quality of input D. A series combination of controllable switch and a
current decreases capacitor is used
C. Harmonic distortion decreases and quality of input
current increases In rectifiers, load current flow is_________?
D. Both harmonic distortion and quality of input current 0
decreases A. Unidirectional
B. Bidirectional
n a phase controlled 3 phase ac voltage controller, the C. Either (a) or (b)
harmonic present is__________? D. Non directional
0
A. 2nd Due to non sinusoidal waveform of the input current,
B. 3rd the power factor of the rectifier is____________?
C. 5th 0
D. 7th A. Negatively affected by firing angle
B. Negatively affected by distortion of the input current
The power MOSFET device is a___________? C. Positively affected by both firing angle and distortion
0
of the input current C. DC – AC
D. Both (a) and (b) D. All of these

Single phase VSI are mainly used in___________? In bipolar modulation, the carrier is symmetric about
0 zero with amplitude equal to Cm, the PWM output
A. Power supplies 0
B. Ups A. Zero
C. Multilevel configuration B. Switches between – 1 / 2 and + 1 / 2
D. All of these C. Switches between – 1 and + 1
D. Switches between 0 and + 1
The man made noise sources is / are_____________?
0 In a 3 phase VSI out of eight valid states, the number
A. Motors of valid states that produce zero ac line voltages
B. Switches, radio interferences is/are_________?
C. Computers, digital electronics 0
D. All of these A. One
B. two
Very large values of modulation index (greater than C. Three
3.24) lead to___________? D. Four
0
A. Square AC output voltage The square wave operation of 3 phase VSI lines
B. Sine AC output voltage contains the harmonics. The amplitudes
C. Triangular AC output voltage are____________?
D. Trapezoidal AC output voltage 0
A. Directly proportional to their harmonic order
Any electrical signal present in a circuit other than B. Inversely proportional to their harmonic order
the desired signal is known as______________? C. Not related to their harmonic order
0 D. None of these
A. Noise
B. Distortion In a three phase voltage source
C. Interference inverters____________?
D. All of these 0
A. Only amplitude of voltage is controllable
In single phase VSI, the harmonic which is not B. Only phase is controllable
present is____________? C. Both amplitude and phase is controllable
0 D. Amplitude, phase and frequency of voltages should
A. 2nd always be controllable
B. 3rd
C. 5th Under harmonic free load voltages, the 3 phase
D. 7th VSI_____________?
0
In commutation PAC stands for_______? A. Does not contains second harmonic
0 B. Does not contains third harmonic
A. Permanent angle converter C. Does not contains fifth harmonic
B. Phase angle converter D. Does not contains seventh harmonic
C. Phase angle commutation
D. Phase and commutation Double edge modulation eliminates certain harmonics
when the reference is a__________?
Double fourier series analysis of PWM 0
is_____________? A. Sine wave
0 B. Square wave
A. Two dimensional functions C. Triangular wave
B. Three dimensional functions D. Trapezoidal wave
C. One dimensional functions
D. All of these For similar carrier and modulating signals, the line
current used in CSI is__________?
In the operation and control of both naturally 0
commutated and forced commutated SCR base A. Identical to line voltage in a VSI
converter, commutation plays an important role. The B. Identical to line current in VSI
converters is / are ___________? C. Identical to phase voltage in VSI
0 D. Identical to phase voltage in CSI
A. AC – DC
B. DC – DC The carrier which are commonly used in constant –
frequency PWM is______________?
0 Between the incoming and outgoing devices in voltage
A. Sawtooth carrier commutation
B. Inverted sawtooth carrier 0
C. Triangle carrier A. Large overlapping takes place
D. All of these B. Small overlapping operation
C. No overlapping operation
In a 3 phase CSI, if the required line output voltages D. None of these
are balanced and 120 degree out of phase, then the
chopping angles are used to eliminate only the The average value of the output voltage in a step –
harmonics at frequencies down dc chopper is given by__________?
0 0
A. 5 A. V 0 = V s
B. 7 B. V 0 = D V s
C. 11 C. V 0 = V s / D
D. All of these D. V 0 = V s / ( 1 – D )

A capacitive load in voltage source inverters The effects of EMI can be reduced by____________?
generates ________________? 0
0 A. Suppressing emissions
A. Small current spikes and can be reduced by using an B. Reducing the efficiency of the coupling path
inductive filter C. Reducing the susceptibility of the receptor
B. Large current spikes and can be increased by using an D. All of these
inductive filter
C. Small current spikes and can be increased by using an Choppers is a_______________?
inductive filter A. AC – DC converters
D. Large current spikes and can be reduced by using B. AC – AC converters
an inductive filter C. DC – AC converters
D. DC – DC converters
In a three phase converter, the number of notches per
cycle is____________? In radiative coupling, the emitter radiation
0 field_____________?
A. One 0
B. Three A. Decays as 1 / R, where R is the separation distance
C. Six between the emitter and the receptor
D. Nine B. Decays as R, where R is the separation distance
between the emitter and the receptor
The main objective of static power converters is C. Decays as 1 / 2 R, where R is the separation distance
to____________? between the emitter and the receptor
0 D. Decays as 2R, where R is the separation distance
A. Obtain an dc output waveform from a dc power between the emitter and the receptor
supply
B. Obtain an ac output waveform from a dc power In BJT, switching losses occurs___________?
supply A. Only at turn – on
C. Obtain an dc output waveform from a dc power B. Only at turn – off
supply C. Both at turn on and off
D. Obtain an ac output waveform from a ac power suppl D. None of these

During the commutation period in 3 phase converter, In BJT, the forward biased base emitter junction
overlap time is_____________? inject holes from base to emitter, the holes_______?
0 0
A. Dependent on the load current A. Do not contribute to the collector current
B. Dependent on the voltage B. Result in net current flow component into the base
C. Dependent on both the load current and load C. Contribute to the collector current
voltage behind the short circuit current D. Only (a) and (b)
D. Independent on both the load current and load voltage E. Only (b) and (c)

The control method used for PWM dc – dc converter In EMC signal, the source delivers maximum power
is______________? to the input of transmission line when the
0 transmission line input impedance
A. Voltage mode control 0
B. Current mode control A. Is equal to the source resistance
C. Hysteric control B. Greater than the source resistance
D. All of these C. Smaller than the source resistance
D. None of these
As the breakdown voltage reached, the DIAC A. Voltage across the commutating inductances collapses
exhibits? B. The capacitance voltage adds to the supply voltage
0 C. Both A. and B.
A. Negative resistance characteristics D. None of these
B. Goes into avalanche condition
C. Voltage drop snaps back For power output higher than 15 kW, the suitable
D. All of these rectifier is________________?
0
For swept frequency measurements, the input A. Single phase
impedance of the mismatched transmission line would B. 3 phase
vary with frequency as the electrical length of the C. Poly phase
transmission line would D. Only (b) and (c)
0
A. Decrease with frequency In a full wave rectifier, the rectification ratio is
B. Remains same with change in frequency approximately equal to____________?
C. Increase with frequency 0
D. Either A. or B. A. 61%
B. 71%
DIAC are specifically designed to C. 81%
trigger______________? D. 91%
0
A. TRIAC LISN is a device used to measure conducted
B. SCR emissions. LISN stands for_____________?
C. GTO 0
D. Only (a) and (b) A. Line integrated stabilization network
B. Line impedance stabilization network
Voltage commutation circuit can be converted into a C. Line integrated stored network
current commutation by interchanging the positions D. Laser integrated stabilization networking
of____________?
0 In a single phase full wave rectifier, during blocking
A. Diode and capacitor state the pea inverse voltage of diode
B. Capacitor and SCR is______________?
C. Inductor and capacitor 0
D. Capacitor and load A. V m
B. 2 V m
In a 3 phase bridge rectifier the ripple frequency is C. V m / 2
_____________? D. 4 V m
0
A. Equal to the input frequency A single phase ac – dc converter is also known
B. Twice the input frequency as____________?
C. Three times the input frequency 0
D. Six times the input frequency A. rectifier
B. inverter
In a load commutated DC – DC chopper, the C. chopper
capacitor has a_____________? D. regulator
0
A. Symmetric triangular voltage across itself The output power of the cascaded amplifier /
B. Symmetric rectangular voltage across itself attenuator system can be determined
C. Symmetric trapezoidal voltage across itself using___________?
D. Symmetric sinusoidal voltage across itself 0
A. Actual gain of amplifier
The sum of all phase current in a star connected B. Actual gain of amplifier and attenuator
primary winding with no neutral connection is equal C. Gain in dB of amplifier and attenuator
to___________? D. Actual gain of attenuator
0
A. Phase current If the gate voltage of an SCR is removed, then
B. Three times the phase current the_______________?
C. Three times the line current 0
D. Zero at all times A. anode current decreases
B. anode current does not decrease at all
In current commutated DC-DC choppers, the voltage C. anode current increases
spike appears across the load when_____________? D. cathode current increases
0
Anode of an operational SCR is _______________?
0 0
A. Always positive w.r.t cathode A. Lossless
B. Always negative w.r.t anode B. Carry current in any direction when it is on
C. Always positive w.r.t anode C. Does not carry any current in any direction when it is
D. Always negative w.r.t cathode off
D. All of these
An SCR is made up of silicon because?
0 In ac – dc conversion, when the switch is closed then
A. silicon has large leakage current than germanium the sum of voltages around the loop is____________?
B. silicon has small leakage current than germanium 0
C. silicon has small leakage voltage than germanium A. Zero
D. silicon has large leakage voltage than germanium B. Non zero
C. Equal to the sum of voltage when switch is open
D. Twice of the voltage when switch is open
In a silicon controlled rectifier, the load is
connected___________? If a shunt motor is started with its field winding open
0 then?
A. Across anode 0
B. In series with anode A. It will rotate at the same speed as that with its field
C. Across cathode winding closed
D. In series with cathode B. It will rotate at less speed as that with its field winding
closed
AC power in a load can be controlled by C. It will rotate at dangerously high speed
using____________? D. None of these
0
A. Two SCR’s in parallel opposition A rectifier with an external low pass filter is an
B. Two SCR’s in series example of______________?
C. Three SCR’s in series 0
D. Four SCR’s in series A. Indirect switch matrix circuits
B. Direct switch matrix circuits
Number of PN junction in an SCR is____________? C. Embedded converters
0 D. All of these
A. Two
B. Three What is the advantage of HRC fuses over Rewirable
C. Four fuses?
D. Five 0
A. High speed operation
The switching function of semiconductor devices can B. High rupturing capacity
be characterized with___________? C. No ageing effect
0 D. All of the above
A. Duty ratio only
B. Frequency only The power demand can be estimated approximately
C. Duty ratio and frequency by___________?
D. Duty ratio, frequency and time delay 0
A. Load survey method
IGBT stands for___________? B. Mathematical method
0 C. Statistical method
A. Insulated gate bipolar transistor D. Economic parameters
B. Insulated gate bidirectional transistor
C. Inductive gate bipolar transistor 4 thyristors rated 200 V in series. The operating
D. Inductive gate bidirectional transistor voltage of the string is 600 V. Derating factor of the
string is_____________________?
Electrical power output in a d.c. generator is equal 2
to____________? A. 0.75
0 B. 0.7
A. Electrical power developed in armature – copper C. 0.2
losses D. 0.25
B. Mechanical power input – iron and friction losses
C. Electrical power developed in armature – iron and Unipolar modulation is generally used
copper losses in____________?
D. Mechanical power input – iron and friction losses – 0
copper losses A. AC – AC converters
B. AC – DC converters
An ideal switch is___________?
C. DC – AC converters 0
D. DC – DC converters A. String efficient
B. Reliability factor
Dynamic equalizing circuit is used C. Factor of safety
for________________? D. Derating factor
0
A. equal division of voltage across each thyristor Anode current in an SCR consists of____________?
B. equal division of current through each thyristor in 0
parallel A. holes only
C. equal division of voltage across each thyristor in B. electrons only
parallel C. either electron or holes
D. equal division of current through each thyristor in D. Both electron and holes
series
To meet high current demand we use SCRs
A string of n parallel SCRs is operated at 72 KA, the in______________?
rating of each SCR is 1 KA. If derating factor of the 0
string is 0.1. value of n will be___________? A. series connection.
0 B. parallel connection.
A. 60 C. anti parallel connection.
B. 70 D. both B and C.
C. 80
D. 90 Dynamic equalising circuit is useful____________?
0
60 thyrsistors are connected in series and parallel to A. To limit di / dt of SCR
form a 10 KV and 5.5 KA switch. Each thyristor is B. To limit dV / dt of SCR
rated for 1.2 KV, 1 KA. The no. of parallel path are 6. C. For voltage equalisation
The efficiency of the switch D. Both B and C
is______________________?
0 SCRs are used in series to meet_______________?
A. 76.3 % 0
B. 91.6 % A. high current demand
C. 83.3 % B. low voltage demand
D. 90.9 % C. low current demand
D. high voltage demand
Maximum di / dt in a SCR is________?
0 Which following is a two terminal three layer device?
A. Directly proportional to Vm of supply voltage 1
B. Inversely proportional to Vm of supply voltage A. BJT
C. Inversely proportional to L in the circuit B. Power dioed
D. Both A and C C. MOSFET
D. None of above
A thyristor string is made of a no. of SCR connected
in series and parallel. The string have volume and ON state voltage drop across SCR lie between the
current of 11 KV and 4 KA. The voltage and current range_____________?
rating of available SCRs are 1800 V and 1000 A. For 0
a string efficiency of 90 % let the number of SCRs in A. 0 – 0.5 V.
series and parallel are a and b respectively. Then the B. 0.5 – 1 V.
value of a and b will be_____________? C. 1 – 1.5 V.
0 D. 1.5 – 2 V.
A. 5, 7
B. 4, 6
C. 7, 5 Which of following is not a power transistor?
D. 6, 4 0
A. IGBTs
B. COOLMOS
For series connected SCR’s dynamic C. TRIAC
equalising circuit consists of___________? D. SITS
0
A. R and C in series but with diode across C
B. R and C in series but with diode across R Which statement is true ?
C. Series R and diode with C across R 0
D. Series R and diode with C across R A. Reverse recovery time ( trr ) > gate recovery time
(tgr)
B. Device turn OFF time ( tq ) > reverse recover time
By which one of the following we can measure the (trr)
reliability of a string_____________?
C. Circuit turn OFF time > device turn OFF time ( tq ) A. Filled controlled diode
D. All of these B. Filled controlled rectifier
C. Silicon controlled rectifier
Which of following is normally ON device? D. None of these
0
A. SIT The typical time of rising time lies
B. BJT between______________?
C. TRIAC 0
D. IGBT A. 10 – 20 µs
B. 40 – 60 µs
Typical range of thyristor turn OFF time C. 1 – 4 µs
is______________? D. 90 – 100 µs
0
A. 3 – 10 µs The reverse recovery time of diode is trr = 3 μs
B. 3 – 50 µs and the rate off all of the diode current is di/dt = 30
C. 3 – 100 µs A/μs. The storage charge current QRR
D. 3 – 500 µs is___________?
0
Power transistor are type of___________? A. 130 μs
0 B. 135 μs
A. B.JTs C. 140 μs
B. MOSFETs D. 145 μs
C. IGBTs
D. All of above Maximum power loss occurs
during_________________?
During gate recovery time_____________? 0
0 A. delay time
A. charge carriers of J2 junction recombined B. rise time
B. charge carriers of J2 junction is swept out C. spread time
C. charge carrier of J1 junction removed D. all
D. charge carriers of J3 junction is removed
Spread time is defined as the interval during
During reverse recovery time__________________? which_____________?
0 0
A. charge carrier of junction J2 recombined A. anode voltage drops from 10 % of its initial value to
B. charge carrier of junction J1 is swept out zero
C. charge carrier of junction J3 is swept out B. anode current rises from 90 % to its final value
D. both B and C C. both (A) and (B)
D. anode current rises from 10 % to 90 % of its final
value
Which of the following is true about SIT?
0
A. SIT is a high power, high frequency device The turn-on time of an SCR with inductive load is 20
B. SIT is a high power, low frequency device µs. The puls train frequency is 2.5 KHz with a
C. SIT is a high power, high voltage device mark/space ratio of 1/10, then SCR will___________?
D. SIT is a low power, high frequency device 0
A. Turn on
B. Not turn on
During which time maximum conduction spreading C. Turn on if inductance is removed
take place in the thyristor during turn ON? D. Turn on if pulse frequency us increased to two times
0
A. Delay time
B. Spread time A power MOSFET has three terminals
C. Rise time called___________?
D. Same for every case 0
A. Collector, emitter and gate
B. Drain, source and gate
A GTO can be turned on by applying___________? C. Drain, source and base
0 D. Collector, emitter and base
A. Positive gate signal
B. Positive drain signal
C. Positive source signal Rise time is defined by the interval
D. None of these when____________?
0
A. gate current rises from 90 % to 100 % of it final value
SITH is also known as___________? B. anode voltage drops from 90 % to 10 % of its initial
0 value
C. anode current rises 10 % to 90 % of its final value A. Breakdown of junction
D. both B and C B. Local hot spot
C. Insulation failure
A modern power semiconductor device that combines D. None of these
the characteristic of BJT and MOSFET
is_____________? IGBT combines the advantages of_____________?
0 0
A. IGBT A. BJTs and SITs
B. FCT B. BJTs and MOSFETs
C. MCT C. SITs and MOSFETs
D. GTO D. None of these

Delay time is defined by the interval Which of the following is used in SCR to protect from
when_______________? high dV / dt__________________?
0 A. Snubber circuit
A. gate current increases from 90 % to 100 % of its final B. Fuse
value C. Equalizing circuit
B. anode current reaches 10 % from forward leakage D. Circuit breaker
current
C. anode voltage drops from 100 % to 90 % of its actual COOLMOS device can be used in application up to
value power range of___________?
D. all of these 0
A. 1 KVA
Which one is most suitable power device for high B. 2 KVA
frequency (>100 KHz) switching application? C. 500 VA
0 D. 100 KVA
A. BJT
B. Power MOSFET What is used to protect a thyristor from high di / dt
C. Schottky diode conditions__________?
D. Microwave transistor 0
A. Fuse.
Snubber circuit is used with B. Snubber circuit
SCR_________________? C. Inductor
0 D. Voltage clamping device
A. in series
B. in parallel Compared to transistor, _________ have lower on
C. either series or parallel state conduction losses and higher power handling
D. anti parallel capability?
0
Why resistor is used in Snubber A. TRIACs
circuit_________________ ? B. Semi conductor diodes
0 C. MOSFETs
A. To minimize the loss D. Thyristor
B. To minimize the charging current
C. To minimize the discharging current Materials used in heat sink should
D. All of these have_____________?
0
A. high thermal conductivity
What may happen high dV / dt____________? B. large surface area
0 C. high melting point
A. Unwanted turn ON D. All of these
B. Breakdown of J2 junction
C. Both A and B A thyristor can termed as__________?
D. Anyone of these 0
A. AC switch
Thermal voltage VT can be given by____________? B. DC switch
2 C. Both a and B
A. Kq/T D. Square wave switch
B. KT/q
C. qT/K
D. (K2/q)(T + 1/T – 1) Which of the following is used in heat
sink_____________?
What happen due to high di / dt____________? 0
A. Iron Let of a thyristor Vc1, Vc2, Vc3 are forward break
B. Aluminium over voltage for gate current Ig1, Ig2, Ig3
C. Carbon respectively. Then________________?
D Silver 0
A. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3.
How can we protect SCR from thermal conditions B. Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3.
_____________? C. Vc1 = Vc2 = Vc3 any value of Ig.
0 D. Vc1 > Vc2 > Vc3 when Ig1 ≥ Ig2 &Atil
A. Use of snubber circuit.
B. Using heat sink. Which of following devices has highest di/dt and dv/dt
C. Using CB and fuse. capability?
D. Using equalizing circuit 0
A. SIT
Thyristor is nothing but a____________? B. SITH
0 C. GTO
A. Controlled transistor D. SCR
B. Controlled switch
C. Amplifier with higher gain Which triggering is the most reliable____________?
D. Amplifier with large current gain 0
A. Forward voltage triggering
Gate circuit or triggering circuit of a thyristor is B. Gate triggering
0 C. dV / dt triggering
A. lower power circuit. D. Thermal triggering
B. high power circuit.
C. magnetic circuit. Leakage current flows through the thyristor
D. may be low power or high power circuit in_________?
0
After proper turn on of thyristor____________? A. forward blocking mode
0 B. reverse blocking mode
A. gate signal is always present C. both forward and reverse blocking mode
B. gate signal must be removed D. forward conduction mode
C. gate signal should present but can be removed
D. none of the above. Which of the following is disadvantage of fast
recovery diodes?
SCR will be turned off when anode current 0
is_______________? A. Recovery is only 5 µs
0 B. Recovery is only 50 µs
A. < latching current but greater than holding current and C. Doping is carried out
gate signal is 0. D. None of these
B. less than holding current.
C. < latching current but greater than holding current and When a large surge current of very short duration
gate signal is present. flows through a thyristor then which one of the
D. both (A) and (B). following device will operate to protect the thyristor
___________?
The capacitance of reversed bised junction J2 in a 0
thyristor is CJ2 = 20 pF and can be assumed to be A. CB
independant of the off state voltage. The limiting B. Snubber circuit
value of the charging current to turn on the thyristor C. Voltage clamping device
is 16 mA. What is the critical value of dv/dt? D. Fast acting current limiting device (FACL fuse)
0
A. 600 V/µs A power semiconductor may undergo damage due
B. 800 V/µs to____________?
C. 1200 V/µs 0
D. 1000 V/µs A. High di/dt
B. High dv/dt
BCT is used for____________? C. Low di/dt
0 D. Low dv/dt
A. High power phase control
B. High power current control CB used for over current protection of thyristor
C. Low power current control operates when the fault current is__________?
D. Low power phase control 0
A. of long period
B. of short duration
C. both (A) and (B) C. metal oxide varistor
D. neither (A) nor (B) D. aluminium block

If the anode current is 800 A, then the amount of Switching frequency of SITH is____________?
current required to turn off the GTO is 0
about____________? A. 5 KHz
0 B. 10 KHz
A. 20 A C. 60 KHz
B. 200 A D. 100 KHz
C. 600 A
D. 400 A Practical way of obtaining static voltage equalization
in series connected SCRs is by the use
What is used to protect the SCR from over current of____________?
________________? 0
0 A. One resistor across the string
A. CB and fuse. B. Resistors of the same value across each SCR
B. Heat sink. C. Resistors of different values across each SCR
C. Snubber circuit. D. One resistor in series with each SCR
D. Voltage clamping device.
Thyristor can be protected from over voltages by
Under normal operating condition voltage clamping using____________?
device offers impedance of_________? 0
0 A. voltage clamping device.
A. high value. B. fuse.
B. low value. C. heat sink.
C. zero value. D. snubber circuit.
D. moderate value.
Thyristor can be protected from over voltages by
Which semiconductor device acts like a diode and two using
transistor? 0
0 A. 23 mA.
A. UJT B. 40 mA.
B. Diac C. 10 mA.
C. Triac D. 60 mA.
D. SCR
A single phase full bridge inverter can operate in load
Under over voltage condition impedance offered by commutation mode in case load consists
the voltage clamping device is__________? of____________?
0 0
A. low A. RL.
B. High B. RLC underdamped.
C. moderate C. RLC overdamped.
D. infinity D. RLC critically damped.

The latching current of GTO should be of order The function of snubber circuit connected across the
0 SCR is to___________?
A. 100 mA 0
B. 500 mA A. Suppress dV / dt.
C. 1 A B. Increase dV / dt.
D. 2 A C. Decrease dV / dt.
D. Decrease di / dt.
The maximum di/dt in a SCR is____________?
0
A. Directly proportional to supply voltage For an SCR gate – cathode characteristic is a
B. Directly proportional to inductance in the circuit straight line of 130. For triggered source volume of 15
C. Inversely proportional to supply voltage V and allowable gate power dissipation of 0.5 W
D. Both A and B compute the gate source resistance_____?
0
Example of a voltage clamping A. 111.9 Ω.
device______________? B. 11.19 Ω.
0 C. 108 Ω.
A. fast acting fuse D. 115 Ω
B. snubber circuit
In forward blocking mode of a thyristor________?
0 An SCR is considered to be a semi controlled device
A. junction J2 is in reverse bias and J1, J3 is in because_______?
forward bias. 0
B. junction J3 is in forward bias and J1, J2 is in reverse A. it can be turned OFF but not ON with a gate pulse.
bias. B. it conducts only during one half cycle of an alternating
C. Junction J1, J3 is in reverse bias and J2 is in forward current wave.
bias. C. it can be turned ON but not OFF with a gate pulse.
D. Junction J1 and J2 is in forward bias and J3 is in D. it can be turned ON only during one half cycle of an
reverse bias. AC.

In reverse blocking mode of a thyristor______? The typical value of SCR for modern alternator
0 is____________?
A. junction J2 is in reverse bias and J1, J3 is in forward 0
bias. A. 1.5.
B. junction J3 is in forward bias and J1, J2 in reverse B. 0.5.
bias. C. 1.0.
C. junction J1, J3 is in reverse bias and J2 is in D. 1.2.
forward bias.
D. junction J1 and J2 is in forward bias and J3 is in An SCR has half cycle surge current rating of 3000 A
reverse bias. for 50 Hz supply. One cycle surge current will
be_____?
If holding current of a thyristor is 2 mA then latching 0
current should be_____? A. 1500 A.
0 B. 6000 A.
A. 0.01 A. C. 2121.32 A.
B. 0.002 A. D. 4242.64 A.
C. 0.009 A.
D. 0.004 A. A Triac has three terminals viz ___________?
0
Which statement is true for latching current A. Drain, source, gate
___________? B. Two main terminal and a gate terminal
0 C. Cathode, anode, gate
A.It is related to turn off process of the device. D. None of the above
B. It is related to conduction process of device.
C. It is related to turn on process of the device. A thyristor is basically________?
D. Both C and D. 0
A. PNPN device
A step up chopper has input voltage 110 V and output B. A combination of diac and triac
voltage 150 V. The value of duty cycle is_____? C. A set of SCRs
2 D. A set if SCR,diac and triac
A. 0.32
B. 0.67 A PNPN device having two gates is ___________?
C. 0.45 0
D. 0.27 A. Diac
B. Triac
A single phase one pulse controlled circuit has a C. SUS
resistance R and counter emf E load 400 sin(314 t) as D. BCS
the source voltage. For a load counter emf of 200 V,
the range of firing angle control is _____? A silicon controlled racitifier (SCR) is a
0 ____________?
A. 30° to 150°. 0
B. 30° to 180°. A. Unijunction device
C. 60° to 120°. B. Device with three junction
D. 60° to 180°. C. Device with four junction
D. None of the above
A single phase full bridge inverter can operated in
load commutation mode in case load consist A thyristor equivalent of a thyratron tube is a
of______? _________?
0 0
A. RL. A. Diac
B. RLC underdamped. B. Triac
C. RLC overdamped. C. Silicon controlled-rectifier SCR
D. RLC critically damped D. None of above
A Triac is a ______________?
0
A. 2 terminal switch
B. 2 terminal bilateral switch
C. 3 terminal bilateral switch
D. 3 terminal bidirectional switch