Week5HW S15 Solutions PDF

Mark
Lundstrom Spring 2015
SOLUTIONS: ECE 305 Homework: Week 5

Mark Lundstrom
Purdue University

The following problems concern the Minority Carrier Diffusion Equation (MCDE) for
electrons:
∂ Δn d 2 Δn Δn
= Dn − + GL
∂t dx 2 τn
For all the following problems, assume p-‐type silicon at room temperature, uniformly
doped with N A = 1017 cm-‐3, µ n = 300 cm2/V sec, τ n = 10−6 s. From these numbers, we find:
kT
Dn = B µn = 7.8 cm 2 s Ln = Dnτ n = 27.9 µm
q
Unless otherwise stated, these parameters apply to all of the problems below.

1) The sample is uniformly illuminated with light, resulting in an optical generation rate
GL = 1020 cm-‐3 sec-‐1. Find the steady-‐state excess minority carrier concentration and
the QFL’s, Fn and Fp . Assume spatially uniform conditions, and approach the
problem as follows.

Solution:
1a) Simplify the Minority Carrier Diffusion Equation for this problem.
∂ Δn d 2 Δn Δn
Begin with: = Dn − + GL
∂t dx 2 τn
d 2 Δn Δn
Simplify for steady-‐state: 0 = Dn − + GL
dx 2 τn
Δn
Simplify for spatially uniform conditions: 0 = 0 − + GL
τn
So the simplified MCDE equation is:

Δn
− + GL = 0
τn

1b) Specify the initial and boundary conditions, as appropriate for this problem.

Solution:
Since there is no time dependence, there is no initial condition. Since there is no
spatial dependence, there are no boundary conditions.

ECE-‐305 1 Spring 2015

Mark Lundstrom Spring 2015
HW5 Solutions (continued):

1c) Solve the problem.

Solution:
In this case the solution is straightforward: Δn = GLτ n = 10 20 × 10 −6 = 1014 cm -3
Now compute the QFLs:
Since we are doped p-‐type and in low level injection:
p ≈ p0 = N A = ni e
(E −F )
i p k BT

⎛N ⎞ ⎛ 1017 ⎞
Fp = Ei − k BT ln ⎜ A ⎟ = Ei − 0.026ln ⎜ 10 ⎟ = Ei − 0.41 eV
⎝ ni ⎠ ⎝ 10 ⎠
n ≈ Δn >> n0 = ni e(
Fn − Ei ) k BT

⎛ Δn ⎞ ⎛ 1014 ⎞
Fn = Ei + k BT ln ⎜ ⎟ = Ei + 0.026ln ⎜ 10 ⎟ = Ei + 0.24 eV
⎝ ni ⎠ ⎝ 10 ⎠
Note that since we are using the MCDE, we are assuming low-‐level
injection. We should check the assumption that Δn << p . From the
solution and the given p-‐type doping density, we have:
Δn = 1014 << p = 1017 . We are, indeed, in low level injection.

1d) Provide a sketch of the solution, and explain it in words.

Solution:
The excess carrier density is constant, independent of position. So are the QFL’s,
but they are split because we are not in equilibrium.

The hole QFL is essentially where the equilibrium Fermi level was, because the hole
concentration is virtually unchanged (low-‐level injection). But the electron QFL is
much closer to the conduction band because there are orders of magnitude more
electrons.



2) The sample has been uniformly illuminated with light for a long time. The optical
generation rate is GL = 1020 cm-‐3 sec-‐1. At t = 0, the light is switched off. Find the
excess minority carrier concentration and the QFL’s vs. time. Assume spatially
uniform conditions, and approach the problem as follows.


Solution:
∂ Δn d 2 Δn Δn
∂t dx 2 τn
dΔn Δn
Simplify for spatially uniform conditions with no generation: =−
dt τn


Solution:
Because there is no spatial dependence, there is no need to specify boundary
condition. The initial condition is (from prob. 1):
Δn ( t = 0 ) = 1014 cm -3


Solution:
dΔn Δn
=− The solution is: Δn ( t ) = Ae−t /τ n
dt τn
Now use the initial condition: Δn ( t = 0 ) = 1014 = A
Δn ( t ) = 1014 e−t /τ n




Solution:

⎛ Δn ( t ) + n0 ⎞
For the electron QFL: Fn ( t ) = Ei + kBT ln ⎜ ⎟⎠
⎝ ni
Initially, Δn ( t ) >> n0 and Δn ( t ) = Δn ( 0 ) e−t /τ n , so
Fn ( t ) initially drops linearly with time towards E F .

3) The sample is uniformly illuminated with light, resulting in an optical generation rate
GL = 1020 cm-‐3 sec-‐1. The minority carrier lifetime is 1 μsec, except for a thin layer (10
nm wide near x = 0 where the lifetime is 0.1 nsec. Find the steady state excess
minority carrier concentration and QFL’s vs. position. You may assume that the
sample extends to x = +∞ . HINT: treat the thin layer at the surface as a boundary
condition – do not try to resolve Δn ( x ) inside this thin layer. Approach the problem
as follows.


Solution:
∂ Δn d 2 Δn Δn
∂t dx 2 τn
d 2 Δn Δn
Simplify for steady-‐state conditions: 0 = Dn − + GL
dx 2 τn
The simplified MCDE equation is:
d 2 Δn Δn d 2 Δn Δn GL
Dn − + G = 0 − 2 + = 0 Ln = Dnτ n
dx 2 τ n
L
dx 2 Ln Dn



d 2 Δn Δn GL
− 2 + = 0 where Ln = Dnτ n is the minority carrier “diffusion
dx 2 Ln Dn
length.”

3b) Specify the initial and boundary conditions as appropriate for this problem.

Solution:
Since this is a steady-‐state problem, there is no initial condition. As x → ∞ , we
have a uniform semiconductor with a uniform generation rate. In a uniform
semiconductor under illumination, Δn = GLτ n (recall prob. 1)), so
Δn ( x → ∞ ) = GLτ n

In the thin layer at the surface, the total number of e-‐h pairs recombining per
cm2 per second is the recombination rate per cm3 per sec, which is
R = Δn ( 0 ) τ S cm -3s-1 , times the thickness of the thin layer at the surface, Δx in
cm. If we multiply these two quantities, we get the total number of minority
carriers recombining per cm2 per s in the surface layer, which we will call RS .

Δx
Δn ( 0 )
RS = ∫ R ( x )dx ≈
0
τS
Δx cm -2 -s-1 .
Rearranging this equation, we can write

Δx
RS = Δn ( 0 ) = S F Δn ( 0 ) cm -2 -s-1
τS
where:
Δx
SF ≡ cm/s
τS
is a quantity with the units of velocity. In practice, we usually don’t know the
thickness of the low-‐lifetime layer at the surface or the lifetime in this layer, so
instead, we just specify the front surface recombination velocity. Typically,
0 < S F ≤ 107 cm/s . For this specific problem,
Δx 10−6 cm
SF = = = 104 cm/s
τS 10 s −10
The surface recombination velocity is simply a way to specify the strength of the
recombination rate (in cm-‐2-‐s-‐1) at the surface:
Δx
RS = Δn ( 0 ) = S F Δn ( 0 ) cm -2 -s-1
τS



In steady-‐state, carriers must diffuse to the surface at the same rate that they
are recombining there so that the excess minority carrier concentration at the
surface stays constant with time. The diffusion current of electrons at the
surface is
dΔn
J n = qDn A/cm 2 .
dx
The flux of electrons in the +x direction is
Jn dΔn
= − Dn cm -2 -s-1
−q dx

The flux of electrons in the –x direction (to the surface where they are
recombining) is:
⎛J ⎞ dΔn
− ⎜ n ⎟ = + Dn cm -2 -s-1
−q
⎝ ⎠ dx
In steady-‐state, this flux of electrons flows to the surface at exactly the same rate
that they recombine at the surface, so the boundary condition is

dΔn
+ Dn = RS = S F Δn ( 0 )
dx x=0

Note: Specifying surface recombination by just giving the surface
recombination velocity – not the lifetime and thickness of the thin layer
at the surface, is common practice in semiconductor work.


Solution:

d 2 Δn Δn GL
− 2 + =0
dx 2 Ln Dn

To solve the homogeneous problem first, we set GL = 0.
d 2 Δn Δn
2
− 2 = 0 The solution is Δn ( x ) = Ae− x/Ln + Be+ x/Ln
dx Ln

Now solve for a particular solution by letting x → +∞ where everything is
uniform:
Δn G L2
− 2 + L = 0 The solution is: Δn = − n GL = GLτ n
Ln Dn Dn
Add the two solutions: Δn ( x ) = Ae− x/Ln + Be+ x/Ln + GLτ n


To satisfy the first boundary condition as x → ∞ , B = 0. Now consider the
boundary condition at x = 0 :
dΔn D
+ Dn = − n A = S F Δn ( 0 ) = S F ( A + GLτ n )
dx x=0 Ln
S F GLτ n GLτ n
A= − =−
Dn Ln + S F 1+ Dn Ln ( ) SF
⎡ − x/ L
e n ⎤
()
Δn x = GLτ n ⎢1−
( )
⎥
⎢⎣ 1+ Dn Ln S F ⎥⎦

Check some limits.

i) SF = 0 cm/s, which implies that there is no recombination at the surface.
Then we find: Δn ( x ) = GLτ n , which make sense, since we have spatial uniformity.

ii) S F → ∞ . Strong recombination at the surface should force Δn x = 0 = 0 , ( )
but in the bulk we should still have Δn ( x ) = GLτ n . The transition from 0 to
a finite value in the bulk should take a diffusion length or two.

From the solution:
⎡ − x/ L
e n ⎤
()
Δn x = GLτ n ⎢1−
( )
⎥
⎢⎣ 1+ Dn Ln S F ⎥⎦
For S F → ∞ , we find
Δn ( x ) → GLτ n ⎡⎣1− e− x/ Ln ⎤⎦

which behaves as expected.




Solution:

The concentration is GLτ n in the bulk, but less at the surface, because of surface
recombination. The transition from the surface to the bulk takes place over a
distance that is a few diffusion lengths long.

The hole QFL is constant and almost exactly where the equilibrium Fermi level
was, because we are in low level injection (the hole concentration is very, very
near its equilibrium value). But the electron QFL is much closer to the
conduction band edge. It moves away from EC near the surface, because surface
recombination reduces Δn ( x ) near the surface. The variation with position is
linear, because Δn ( x ) varies exponentially with position.

Note: Typically, in semiconductor work, these kinds of problems are stated
directly in terms of surface recombination velocities and not in terms of very
thin layers with low lifetime. The way problem 3) would usually be stated is as
follows:


3’) The sample is uniformly illuminated with light, resulting in an optical
generation rate GL = 1020 cm-‐3 sec-‐1. The minority carrier lifetime is 1 μsec. At x
= 0 the surface recombination velocity is S F = 104 cm/s . Find the steady state
excess minority carrier concentration and QFL’s vs. position. You may assume
that the sample extends to x = +∞ . Approach the problem as follows.

3b) Specify the initial and boundary conditions, as appropriate for this
problem.

4) The sample is in the dark, but the excess carrier concentration at x = 0 is held constant
at Δn ( 0 ) = 1012 cm-‐3. Find the steady state excess minority carrier concentration and
QFL’s vs. position. You may assume that the sample extends to x = +∞ . Make
reasonable approximations, and approach the problem as follows.


Solution:
∂ Δn d 2 Δn Δn
∂t dx 2 τn
d 2 Δn Δn
dx 2 τn
No generation: GL = 0
the simplified MCDE equation is:
d 2 Δn Δn d 2 Δn Δn d 2 Δn Δn
Dn − = 0 − = 0 − 2 = 0 Ln = Dnτ n
dx 2 τn dx 2 Dnτ n dx 2 Ln
d 2 Δn Δn
− 2 = 0 where Ln = Dnτ n is the minority carrier diffusion length.
dx 2 Ln


Solution:
Since this is a steady-‐state problem, there is no initial condition. As x → ∞ , we
expect all of the minority carriers to have recombined, so:
Δn ( x → +∞ ) = 0


At the surface, the excess electron concentration is held constant, so

Δn ( x = 0 ) = 1012 cm -3


Solution:
d 2 Δn Δn
2
− 2 = 0 The solution is Δn ( x ) = Ae− x/Ln + Be+ x/Ln
dx Ln
To satisfy the first boundary condition in 4b): B = 0. Now consider the second:
Δn ( 0 ) = 1012 cm -3
( )
Δn ( x ) = Δn ( 0 ) e− x/ Ln = 1012 e− x/ Ln


Solution:
ECE-‐305 10 Spring 2015


5) The sample is in the dark, and the excess carrier concentration at x = 0 is held
constant at Δn ( 0 ) = 1012 cm-‐3. Find the steady state excess minority carrier
concentration and QFL’s vs. position. Assume that the semiconductor is only 5 μm
long. You may also assume that there is an “ideal ohmic contact” at x = L = 5 μm,
which enforces equilibrium conditions at all times. Make reasonable
approximations, and approach the problem as follows.


Solution:
∂ Δn d 2 Δn Δn
∂t dx 2 τn
d 2 Δn Δn
dx 2 τn
Generation is zero for this problem: GL = 0 ;
The simplified MCDE equation is:
d 2 Δn Δn d 2 Δn Δn
Dn − = 0 − 2 =0
dx 2 τn dx 2
Ln Ln = Dnτ n

Since the sample is much thinner than a diffusion length, we can ignore recombination, so
d 2 Δn
=0
dx 2 .


Solution:
Since this is a steady-‐state problem, there is no initial condition. As x → ∞ , we expect all of
the minority carriers to have recombined, so:
Δn ( x = L ) = 0

At the surface: Δn ( 0 ) = 1012 cm -2


Solution:
d 2 Δn
= 0 The general solution is Δn ( x ) = Ax + B
dx 2
To satisfy the first boundary condition in 5b): Δn ( L ) = AL + B = 0 .
A = −B L Δn ( x ) = −B x L + B = B (1 − x L )
ECE-‐305 11 Spring 2015


Now consider the second boundary condition:
Δn ( 0 ) = B = 1012 cm -3

() ( )(
Δn x = Δn 0 1− x L = 1012 1− x L) ( )( )


6) The sample is in the dark, and the excess carrier concentration at x = 0 is held
constant at Δn ( 0 ) = 1012 cm-‐3. Find the steady state excess minority carrier
concentration and QFL’s vs. position. Assume that the semiconductor is 30 μm
long. You may also assume that there is an “ideal ohmic contact” at x = L = 30 μm,
which enforces equilibrium conditions at all times. Make reasonable approximations,
and approach the problem as follows.


Solution:
∂ Δn d 2 Δn Δn
∂t dx 2 τn
Simplify for steady-‐state and no generation:
d 2 Δn Δn d 2 Δn Δn d 2 Δn Δn
Dn − = 0 − = 0 − 2 = 0 Ln = Dnτ n
dx 2 τn dx 2 Dnτ n dx 2 Ln

d 2 Δn Δn
− 2 = 0 where Ln = Dnτ n is the minority carrier diffusion length.
dx 2 Ln

ECE-‐305 12 Spring 2015



Solution:
Steady state, so no initial conditions are necessary. The boundary conditions
are:
Δn ( 0 ) = 1012 cm-‐3
Δn ( 30 µm ) = 0


Solution:
Δn ( x ) = Ae− x/Ln + Be+ x/Ln

Because the region is about one diffusion length long, we need to retain both
solutions.

Δn ( 0 ) = A + B
Δn ( L = 30 µm ) = Ae− L / Ln + Be+ L / Ln = 0

Solve for A and B to find:
−Δn ( 0 ) e+ L/Ln
A = − L/Ln
( e − e+ L/Ln )
Δn ( 0 ) e− L/Ln
B=
( e− L/Ln − e+ L/Ln )

So the solution is:
Δn ( 0 )
Δn ( x ) = − L/Ln ⎡ −e−( x−L )/Ln + e+( x−L )/Ln ⎤
(e − e ) + L/Ln ⎣ ⎦
sinh ⎡⎣( x − L ) / Ln ⎤⎦
Δn ( x ) = Δn ( 0 )
sinh ( L / Ln )

ECE-‐305 13 Spring 2015



Solution:

The short base result is linear, but in this case, the slope in a little steeper
initially and a little shallower at the end. Since the diffusion current is
proportional to the slope, this means that inflow greater than outflow. This
occurs because some of the electrons that flow in, recombine in the structure,
so the same number cannot flow out.

ECE-‐305 14 Spring 2015

Week5HW S15 Solutions PDF

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Mark

Lundstrom Spring 2015

SOLUTIONS: ECE 305 Homework: Week 5

ECE-­‐305 1 Spring 2015

HW5 Solutions (continued):

ECE-­‐305 2 Spring 2015

HW5 Solutions (continued):

ECE-­‐305 3 Spring 2015

HW5 Solutions (continued):

ECE-­‐305 4 Spring 2015

HW5 Solutions (continued):

Rearranging this equation, we can write

ECE-­‐305 5 Spring 2015

HW5 Solutions (continued):

ECE-­‐305 6 Spring 2015

HW5 Solutions (continued):

ECE-­‐305 7 Spring 2015

HW5 Solutions (continued):

ECE-­‐305 8 Spring 2015

HW5 Solutions (continued):

ECE-­‐305 9 Spring 2015

HW5 Solutions (continued):

ECE-­‐305 10 Spring 2015

HW5 Solutions (continued):

ECE-­‐305 11 Spring 2015

HW5 Solutions (continued):

ECE-­‐305 12 Spring 2015

HW5 Solutions (continued):

ECE-­‐305 13 Spring 2015

HW5 Solutions (continued):

ECE-­‐305 14 Spring 2015

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