Ordering number:ENN2483A

NPN Triple Diffused Planar Silicon Transistor

2SC4162

400V/10A Switching Regulator Applications

Features Package Dimensions

· High breakdown voltage, high reliability. unit:mm
· High-speed switching (tf=0.1µs typ). 2041A
· Wide ASO.
[2SC4162]
· Adoption of MBIT process. 4.5
· Micaless package facilitating mounting. 10.0 2.8
3.2

3.5
7.2
16.0
18.1
2.4

5.6
1.6
1.2

14.0
0.7
0.75

1 2 3
2.55 2.55 1 : Base

2.4
2 : Collector
3 : Emitter
2.55
Specifications 2.55
SANYO : TO-220ML

Absolute Maximum Ratings at Ta = 25˚C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 500 V
Collector-to-Emitter Voltage VCEO 400 V
Emitter-to-Base Voltage VEBO 7 V
Collector Current IC 10 A
Collector Current (Pulse) ICP PW≤300µs, duty cycle≤10% 20 A
Collector Dissipation PC Tc=25˚C 35 W
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C

Electrical Characteristics at Ta = 25˚C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=400V, IE=0 10 µA
Emitter Cutoff Current IEBO VEB=5V, IC=0 10 µA
hFE1 VCE=5V, IC=1.6A 15* 50*
DC Current Gain hFE2 VCE=5V, IC=8A 10
hFE3 VCE=5V, IC=10mA 10
Continued on next page.
* : The hFE1 of the 2SC4162 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
Rank L M N
hFE 15 to 30 20 to 40 30 to 50

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72204TN (PC)/D0198HA (KT)/3267TA, TS No.2483–1/4
 2SC4162

Continued from preceding page.

Ratings
Parameter Symbol Conditions Unit
min typ max
Gain-Bandwidth Product fT VCE=10V, IC=1.6A 20 MHz
Output Capacitance Cob VCB=10V, f=1MHz 120 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=6A, IB=1.6A 0.8 V
Base-to-Emitter Saturation Voltage VBE(sat)
IC=6A, IB=1.6A 1.5 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=1mA, IE=0 500 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=5mA, RBE=∞ 400 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 7 V
Collector-to-Emitter Sustain Voltage VCEX(sus) IC=4.5A, IB1=0.45A, IB2=–1.8A, L=500µH, clamped 400 V
IC=7A, IB1=1.4A, IB2=–2.8A, RL=28.6Ω,
Turn-ON Time ton 0.5 µs
VCC=200V
IC=7A, IB1=1.4A, IB2=–2.8A, RL=28.6Ω,
Storage Time tstg 2.5 µs
VCC=200V
IC=7A, IB1=1.4A, IB2=–2.8A, RL=28.6Ω,
Fall Time tf 0.3 µs
VCC=200V

Switching Time Test Circuit

PW=20µs
duty factor≤1% OUTPUT
IB1
INPUT RB

IB2
RL
VR
50Ω + +
100µF 470µF

VBE=--5V VCC=200V

IC -- VCE IC -- VBE(on)
10 10
VCE=5V
mA A
00 900m mA
10 800 mA
8 700 A 8
Collector Current, IC – A

600m
Collector Current, IC – A

5 mA
0 0
6
400mA 6
300mA
0 °C
25°C
--40°C
2

200mA
Ta=1

4 4

100mA
2 2

IB=0
0 0
0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Collector-to-Emitter Voltage, VCE – V ITR06410 Base-to-Emitter ON-State Voltage, VBE(on) – V ITR06411
hFE -- IC VCE(sat) -- IC
100 1.0
VCE=5V IC / IB=5
7 7
Saturation Voltage, VCE (sat) – V

Ta=120°C 5
5
DC Current Gain, hFE

3
25°C 3
Collector-to-Emitter

0°
2 2
C
--40°C = 12
Ta 25°
C
0°
C
10
--4
0.1

7 7

5 5
5 7 0.1 2 3 5 7 1.0 2 3 5 710 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC – A ITR06412 Collector Current, IC – A ITR06413

No.2483–2/4
 2SC4162
VBE(sat) -- IC SW Time -- IC
10 10
IC / IB=5 7
VCC=200V
7 IC=5IB1= --2.5IB2
5
Saturation Voltage, VBE (sat) – V

Switching Time, SW Time – µs

R load
5 tstg
3
2
3

1.0
2
7
Base-to-Emitter

Ta= --40°C t on
1.0 3

7 2
25°C
tf
5 120°C 0.1
7
3 5
5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2
Collector Current, IC – A ITR06414 Collector Current, IC – A ITR06415
Forward Bias A S O Reverse Bias A S O
3 3
2
ICP=20A IB2= --1.8A constant
2
≤50µs

ICP=20A L=100µH
10 Tc=25°C
10

IC=10A 10
0µ

Collector Current, IC – A
Collector Current, IC – A

5 7
DC
10

1m

3 op 5
ms

era
s

2 tio
n 3
1.0 2

5
1.0
S

3
/B

7
2
Li

5
m
ite

0.1
3
d

5 2
Tc=25°C
3
2 Single pulse 0.1
3 5 7 10 2 3 5 7 100 2 3 5 7 5 7 100 2 3 5 7 1000
Collector-to-Emitter Voltage, VCE – V ITR06416 Collector-to-Emitter Sustain Voltage, VCEX(sus) – V
ITR06417
PC -- Ta PC -- Tc
2.4 40

35
2.0
Collector Dissipation, PC – W

Collector Dissipation, PC – W

30

1.6
25
No
he
1.2 at 20
sin
k
15
0.8

10

0.4
5

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C ITR06418 Case Temperature, Tc – ˚C ITR06419

No.2483–3/4
 2SC4162

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of July, 2004. Specifications and information herein are subject to
change without notice.

PS No.2483–4/4