DATA SHEET

MOS Field Effect Power Transistors

2SK2723
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

PACKAGE DIMENSIONS
DESCRIPTION (in millimeter)
This product is N-Channel MOS Field Effect Transistor 10.0 ± 0.3 4.5 ± 0.2
3.2 ± 0.2
designed for high current switching spplications. 2.7 ± 0.2

FEATURES

15.0 ± 0.3

3 ± 0.1

12.0 ± 0.2
• Low On-Resistance
RDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A)
RDS (on) 2 = 60mΩ Max. (VGS = 4 V, ID = 13 A)

4 ± 0.2
• Low Ciss Ciss = 830 pF Typ.

13.5MIN.
• Built-in G-S Protection Diode
• Isolated TO-220 Package

0.7 ± 0.1 1.3 ± 0.2 2.5 ± 0.1

1.5 ± 0.2 0.65 ± 0.1
2.54 2.54

1.Gate
2.Drain
3.Source

1 2 3

MP-45F (ISOLATED TO-220)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage VDSS 60 V Drain
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID (DC) ±25 A
Drain Current (pulse)* ID (pulse) ±100 A Body
Diode
Gate
Total Power Dissipation (TA = 25 °C) PT 2.0 W
Total Power Dissipation (Tc = 25 °C) PT 25 W
Channel Temperature Tch 150 °C Gate Protection
Diode
Storage Temperature Tstg −55 to +150 °C Source
*PW ≤ 10 µs, Duty Cycle ≤ 1%

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
deveice acutally used, an addtional protection circiut is externally required if voltage exceeding the rated voltage
may be applied to this device.

The information in this document is subject to change without notice.

Document No. D10623EJ2V0DS00 (2nd edition)

Date Published April 1996 P
Printed in Japan
© 1994
 2SK2723

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Drain to Source RDS (on) 1 VGS = 10 V, ID = 13 A 28 40 mΩ
On-state Resistance RDS (on) 2 VGS = 4 V, ID = 13 A 45 60 mΩ
Gate to Source Cutoff Voltage VGS (off) VDS = 10 V, ID = 1 mA 1.0 1.6 2.0 V
Forward Transfer Admittance y fs  VDS = 10 V, ID = 13 A 8.0 18 S
Drain Leakage Current IDSS VDS = 60 V, VGS = 0 10 µA
Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10 µA
Input Capacitance Ciss VDS = 10 V 830 pF
Output Capacitance Coss VGS = 0 430 pF
Reverse Transfer Capacitance Crss f = 1 MHz 185 pF
Turn-On Delay Time td (on) ID = 13 A 21 ns
Rise Time tr VGS (on) = 10 V 185 ns
Turn-Off Delay Time td (off) VDD = 30 V 100 ns
Fall Time tf RG = 10 Ω 110 ns
Total Gate Charge QG ID = 25 A 35 nC
Gate to Source Charge QGS VDD = 48 V 2.8 nC
Gate to Drain Charge QGD VGS = 10 V 15 nC
Body Diode Forward Voltage VF (S-D) IF = 25 A, VGS = 0 1.0 V
Reverse Recovery Time tr r IF = 25 A, VGS = 0 60 ns
Reverse Recovery Charge Qr r di/dt = 100 A/µs 125 nC

Test Circuit 1 Switching Time Test Circuit 2 Gate Charge

D.U.T D.U.T
RL VGS IG = 2 mA RL
VGS 90 %
VGS (on)
RG
Wave Form
0 10 %
PG. RG = 10 Ω VDD PG. 50 Ω VDD
ID 90 %
90 %
VGS ID
ID
0 Wave Form 0 10 % 10 %

td (on) tr td (on) tr
t
ton toff
t = 1µs
Duty Cycle ≤ 1 %

2
 2SK2723

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA CASE TEMPERATURE
35
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

100 30

25
80
20
60
15
40
10

20 5

0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

TC - Case Temperature - °C TC - Case Temperature - °C

DRAIN CURRENT vs.

FORWARD BIAS SAFE OPERATING AREA DRAIN TO SOURCE VOLTAGE
100
ID(pulse)
PW Pulsed
=1 100 VGS=20V
it ed ID(DC) 1m 00
Lm s s
µ

ID - Drain Current - A
ID - Drain Current - A

)
(o
n
10 80 VGS=10V
10 DS
R m
s
60
DC

1 40
VGS=4V

20
TC = 25 °C
0.1 Single Pulse
0.1 1 10 100 0 2 4 6 8
VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V

FORWARD TRANSFER CHARACTERISTICS

1000
Pulsed
ID - Drain Current - A

100

10 Tch=-25°C
25°C
75°C
125°C
1
VDS=10V

0 1 2 3 4 5 6 7 8
VGS- Gate to Source Voltage - V

3
 2SK2723

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1 000

rth(t) - Transient Thermal Resistance - °C/W

Rth(ch-a)=62.5°C/W
100

10

Rth(ch-c)=5.0°C/W
1

0.1

0.01
Single Pulse

0.001
10µ 100 µ 1m 10m 100m 1 10 100 1 000

PW - Pulse Width - s

FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - mΩ GATE TO SOURCE VOLTAGE
yfs  - Forward Transfer Admittance - S

1000
VDS=10V Pulsed
Pulsed
60

100 Tch=-25°C
25°C
75°C 40
ID=13A
125°C

10
20

1
1 10 100 1 000 0 10 20 30
ID - Drain Current - A VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-State Resistance - mΩ

DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUTOFF VOLTAGE vs.

RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cutoff Voltage - V

80
Pulsed VDS = 10 V
2.0 ID = 1 mA

60
1.5
VGS=4V

40
1.0

20 VGS=10V
0.5

0 0
1 10 100 - 50 0 50 100 150
ID - Drain Current - A Tch - Channel Temperature - °C

4
 2SK2723

SOURCE TO DRAIN DIODE

RDS(on) - Drain to Source On-State Resistance - mΩ

DRAIN TO SOURCE ON-STATE RESISTANCE vs. FORWARD VOLTAGE

CHANNEL TEMPERATURE
Pulsed
80

ISD - Diode Forward Current - A

100

VGS=4V VGS=10V
60
10 VGS=0

40
VGS=10V 1

20
0.1
ID = 13A
0
- 50 0 50 100 150 0 0.5 1.0 1.5
Tch - Channel Temperature -°C VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE SWITCHING CHARACTERISTICS
10 000 VGS = 0 1 000
f = 1 MHz
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF

tr
tf
1 000 Ciss 100 td(off)

Coss td(on)

100 Crss
10

VDD =30V
VGS =10V
10 1 RG =10Ω
0.1 1 10 100 0.1 1 10 100
VDS - Drain to Source Voltage - V ID - Drain Current - A

REVERSE RECOVERY TIME vs.

DIODE CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1 000 di/dt =100A/µ s 80 16
VGS = 0 ID = 25A
trr - Reverse Recovery Time - ns

VDS - Drain to Source Voltage - V

VGS - Gate to Source Voltage - V

14

60 VGS 12
100
10
VDD=12V
40 30V 8
48V
10 6

20 4

2
VDS
1
0.1 1 10 100 0
0 10 20 30 40
IF - Dionde Current - A QG - Gate Charge - nC

5
 2SK2723

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. C10535E
Semiconductor device package manual. C10943X
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. X10679E
Power MOS FET features and application switching power supply. TEA-1034
Application circuits using Power MOS FET. TEA-1035
Safe operating area of Power MOS FET. TEA-1037

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 2SK2723

[MEMO]

7
 2SK2723

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document.
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Anti-radioactive design is not implemented in this product.

M4 94.11
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