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• N-Channel S1 1 8 D1
RDS(ON)=30mΩ(typ.) @ VGS=2.5V S2 3 6 D2
• P-Channel G2 4 5 D2
Applications
S1 D2 D2
APM4500
Package Code
K : SO-8
Handling Code
Operation Junction Temp. Range
Temp. Range C : -55 to 150°C
Handling Code
Package Code TR : Tape & Reel
APM4500 K : APM4500
XXXXX XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM4500
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Static
N-Ch 20
Drain-Source Breakdown
BVDSS VGS=0V , IDS=250µA V
Voltage P-Ch -20
VDS=16V , VGS=0V N-Ch 1
Zero Gate Voltage Drain
IDSS µA
Current VDS=-16V , VGS=0V P-Ch -1
VDS=VGS , IDS=250µA N-Ch 0.5 0.7 1
VGS(th) Gate Threshold Voltage V
VDS=VGS , IDS=-250µA P-Ch -0.45 -1
VGS=±12V , VDS=0V N-Ch ±100
IGSS Gate Leakage Current nA
VGS=±12V , VDS=0V P-Ch ±100
VGS=4.5V , IDS=8A 22 26
N-Ch
Drain-Source On-state VGS=2.5V , IDS=5.2A 30 36
RDS(ON)a mΩ
Resistance VGS=-4.5V , IDS=-4.3A 80 90
P-Ch
VGS=-2.5V , IDS=-2A 105 115
ISD=1.7A , VGS=0V N-Ch 0.8 1.3
VSDa Diode Forward Voltage V
ISD=-1.25A , VGS=0V P-Ch -0.7 -1.3
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
APM4500
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Dynamicb
N-Channel N-Ch 10 13
Qg Total Gate Charge
VDS=10V , IDS= 8A P-Ch 9 12
VGS=4.5V N-Ch 3
Qgs Gate-Source Charge nC
P-Channel P-Ch 3
VDS=-10V , IDS=-3A N-Ch 2.5
Qgd Gate-Drain Charge
VGS=-4.5V P-Ch 1
N-Channel N-Ch 16 32
td(ON) Turn-on Delay Time
VDD=10V , IDS=1A , P-Ch 13 21.5
VGEN =4.5V , RG=0.2Ω N-Ch 40 75
Tr Turn-on Rise Time
P-Ch 36 56
ns
P-Channel N-Ch 42 78
td(OFF) Turn-off Delay Time
VDD=-10V , IDS=-1A , P-Ch 45 69.5
VGEN =-4.5V , RG=6Ω N-Ch 20 35
Tf Turn-off Fall Time
P-Ch 37 57.5
N-Ch 675
Ciss Input Capacitance
P-Ch 510
VGS=0V
N-Ch 178
Coss Output Capacitance VDS=15V pF
P-Ch 270
Frequency=1.0MHz
N-Ch 105
Crss Reverse Transfer Capacitance
P-Ch 120
Notes
b
: Guaranteed by design, not subject to production testing
Typical Characteristics
N-Channel MOSFET
12 12
8 VGS=2V 8
TJ=125°C
4 TJ=-55°C
4 TJ=25°C
VGS=1.5V
0 0
0 1 2 3 4 5 6 7 8 0.0 0.5 1.0 1.5 2.0 2.5
1.25 0.05
1.00 0.04
(Normalized)
VGS=2.5V
0.75 0.03
VGS=4.5V
0.50 0.02
0.25 0.01
0.00 0.00
-50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10
RDS(ON)-On-Resistance (Ω)
RDS(ON)-On-Resistance (Ω)
0.08
1.50
0.07
(Normalized)
0.06 1.25
0.05 1.00
0.04 0.75
0.03
0.50
0.02
0.25
0.01
0.00 0.00
1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150
8 800
Ciss
Capacitance (pF)
6 600
4 400
Coss
2 200
Crss
0 0
0 4 8 12 16 20 0 4 8 12 16 20
QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V)
10
IS-Source Current (A)
48
Power (W)
36
1 TJ=150°C TJ=25°C
24
12
0.1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 1 10 100
VSD -Source-to-Drain Voltage (V) Time (sec)
D= 0.2
D= 0.1
D= 0.05
0.1
D= 0.02
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=62.5°C/W
3.T JM -T A =P DM Z thJA
SINGLE PULSE 4.Surface Mounted
0.01
1E-4 1E-3 0.01 0.1 1 10 100
Typical Characteristics
P-Channel MOSFET
8 -VGS=2V 8
6 6
4 4
-VGS=1.5V TJ=25°C
TJ=125°C TJ=-55°C
2 2
-VGS=1V
0 0
0 1 2 3 4 5 6 7 8 9 10 0.0 0.5 1.0 1.5 2.0 2.5
0.14
RDS(ON)-On-Resistance (Ω)
1.25
0.12
-VGS=2.5V
(Normalized)
1.00
0.10
0.75 -VGS=4.5V
0.08
0.50
0.06
0.25 0.04
0.00 0.02
-50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10
RDS(ON)-On-Resistance (Ω)
RDS(ON)-On-Resistance (Ω)
1.6
0.16
(Normalized)
1.4
0.14
1.2
0.12
1.0
0.10
0.8
0.08
0.6
0.06 0.4
0.04 0.2
1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150
-ID=3A
700
4
Capacitance (pF)
600
Ciss
3
500
400
2
300 Coss
1
200
Crss
0 100
0 2 4 6 8 10 0 5 10 15 20
QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V)
12
-IS-Source Current (A)
10
Power (W)
8
TJ=150°C TJ=25°C 6
1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100
-VSD -Source-to-Drain Voltage (V) Time (sec)
1
Duty Cycle=0.5
Thermal Impedance
D=0.2
D=0.1
0.1
D=0.05
D=0.02
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R thJA=62.5°C/W
3.T JM-T A=P DMZ thJA
D=0.01 SINGLE PULSE
0.01
1E-4 1E-3 0.01 0.1 1 10 100
Packaging Information
0.015X45
E H
e1 e2
A1
A 1
L
0.004max.
Mi ll im et er s Inche s
Dim
Min. Max . Min. Max .
A 1. 35 1. 75 0. 053 0. 069
A1 0. 10 0. 25 0. 004 0. 010
D 4. 80 5. 00 0. 189 0. 197
E 3. 80 4. 00 0. 150 0. 157
H 5. 80 6. 20 0. 228 0. 244
L 0. 40 1. 27 0. 016 0. 050
e1 0. 33 0. 51 0. 013 0. 020
e2 1. 27B S C 0. 50B S C
φ 1 8° 8°
Physical Specifications
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
pkg. thickness ≥ 2.5mm pkg. thickness < 2.5mm and pkg. thickness < 2.5mm and pkg.
and all bgas pkg. volume ≥ 350 mm³ volume < 350mm³
Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Po P D
E
P1
F Bo
W
Ao D1 Ko
T2
J
C
A B
T1
Application A B C J T1 T2 W P E
330 ± 1 62 +1.5 12.75+ 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1
0.15
SOP- 8 F D D1 Po P1 Ao Bo Ko t
5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013
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