THE MAHARAJA SAYAJIRAO UNIVERSITY OF BARODA, ME, INDUSTRIAL ELECTRONICS

“STATIC INDUCTION THYRISTOR”

MASTER OF ENGINEERING
IN
INDUSTRIAL ELECTRONICS

Submitted by
MEHTAB SURTI

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 THE MAHARAJA SAYAJIRAO UNIVERSITY OF BARODA, ME, INDUSTRIAL ELECTRONICS

INDEX
Acknowledgement………………………………………………..3
Certificate…………………………………………………………4
Chapter 1: Introduction…………………………...…………….…5
Chapter 2: Design, Analysis and Methodology……………...……
2.1 Basic Structure of SITh…….……..…...………….6
2.2 Working of SITh………………………………….7
2.3 Features and Specifications…………………….....8
2.4Advantages and Disadvantages……………………9
2.5Ratings…………………………………………….10
2.6Applications……………………………………….10
References...………………………………………………………11

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 THE MAHARAJA SAYAJIRAO UNIVERSITY OF BARODA, ME, INDUSTRIAL ELECTRONICS

ACKNOWLEDGEMENT

I would like to thank to all the people who had assisted either directly
or indirectly in completing my semester Presentation. My thanks to
ANAND SIR, my supervisor whom had giving support, knowledge,
advice and guidance that I needed for my work and for feedback on
my presentation skills.

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 THE MAHARAJA SAYAJIRAO UNIVERSITY OF BARODA, ME, INDUSTRIAL ELECTRONICS

Faculty of Technology and Engineering

Electrical Engineering Department
2019
CERTIFICATE

Date:

This is to certify that the seminar entitled “STATIC

INDUCTION THYRISTOR” has been carried out by following
student under my guidance in degree of Master of Engineering in
INDUSTRIAL ELECTRONICS of The Maharaja Sayajirao
University, Vadodara during the academic year 2019.

Name of Student

MEHTAB SURTI

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 THE MAHARAJA SAYAJIRAO UNIVERSITY OF BARODA, ME, INDUSTRIAL ELECTRONICS

CHAPTER -1: INTRODUCATION

The static induction thyristor (SITh) or field-controlled diode (FCD)

was first introduced by Teszner in the 1960’s. This device is capable
of conducting large currents with a low forward voltage and turn-off
quickly. It is a self-controlled GTO-like on-off device that was
commercially introduced by Toyo Electric Co. (Toyo Denki) of Japan
in 1988. It belongs to a family of Static Induction Device and is a high
power high frequency power semiconductor device.

The static induction thyristor (SIT, SITh) is a thyristor with a

buried gate structure in which the gate electrodes are placed in n-base
region. Since they are normally on-state, gate electrodes must be
negatively or anode biased to hold off-state. It has low noise, low
distortion, high audio frequency power capability. The turn-on and
turn-off times are very short, typically 0.25 microseconds.

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 THE MAHARAJA SAYAJIRAO UNIVERSITY OF BARODA, ME, INDUSTRIAL ELECTRONICS

CHAPTER -2: DESIGN

2.1CONSTRUCTION
 It is essentially a p+nn+ diode with a buried p+ grid like gate
structure. The device structure is analogous to SIT except that
a p+ layer has been added to the anode side.

Basic structure of SITh

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 THE MAHARAJA SAYAJIRAO UNIVERSITY OF BARODA, ME, INDUSTRIAL ELECTRONICS

 Basic structural types of SITH had been developed in

recent years, such as buried gate, surface gate, recessed
gate, double dielectrics gate and buried-gate with diffused
source region (DSR buried-gate). It is normally ON state
device, i.e if the anode is positive and the gate voltage is
zero, the device will behave like a diode and current will
flow freely.
 The forward biasing of the P+ N junction will cause a hole
injection into the region N- region and its conductivity will
be modulated. When the gate is reversed biased with
respect to cathode, a depletion layer will block Anode
current. As a results device gets OFF.
2.2 Working of SITh

 ON STATE
When a positive voltage pulse is applied to the gates, the depletion
region is filled with carriers and the device becomes on-state. The
transition time of the turn-on process is largely dominated by the rate
of the carrier injection time. At the turn-on phase the SI-thyristor
acts just like as a pin-diode .

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 THE MAHARAJA SAYAJIRAO UNIVERSITY OF BARODA, ME, INDUSTRIAL ELECTRONICS

 OFF STATE
Since SITh is normally ON state, the gate electrodes have to be
negatively biased. The negative bias voltage to the gate forms a
low-conductive depletion region around the gates and the SI-
thyristor holds off-state.

2.3Features and Specifications

 Features
 Since they are normally on-state, gate electrodes must be
negatively biased to hold off-state.
 The SI-thyristor at on-state behaves similar to pin diodes.
 The on-state voltage is low in the Si-thyristor, which is due to
thyristor action followed by carrier injection effect around the
gate channel. Minority-carrier device (a JFET structure with an
additional injecting layer).
 Power-handling capability similar to GTO.
 Faster switching speeds than GTO.
 Level-triggered and Voltage-driven (voltage-controlled)
devices.

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 THE MAHARAJA SAYAJIRAO UNIVERSITY OF BARODA, ME, INDUSTRIAL ELECTRONICS

 Specifications
 Short channel length
 Low gate series resistance
 Low gate source capacitance
 Small thermal resistance
 Low noise
 High audio frequency power capability
 The forward blocking voltage of this SITH has been
increased to 1600 V from the previous value of 1000 V
 A high anode blocking voltage VAK and switching speed
are necessary parameters for SITH with good performance.

2.4 Advantages and Disadvantages of SITh

 Advantages
 The device has also high immunity for electromagnetic
noise.
 SITh has high di/dt and dv/dt critical ratio. capable of
handling rapid voltage or current changes.
 It’s a vertical structure device with short multichannel.
Being a vertical device, the SITh offers advantages in
obtaining higher breakdown voltages than FET.
 Disadvantage
 One of the disadvantages of the SIT is the relatively flat
shape of the potential barrier. This leads to slow, diffusion
based transport of carriers in the vicinity of the potential
barrier.

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 THE MAHARAJA SAYAJIRAO UNIVERSITY OF BARODA, ME, INDUSTRIAL ELECTRONICS

2.5 Ratings

2.6 Applications

 Due to its high switching speed, high di/dt and dv/dt

capabilities, along with a low forward on state voltage
(Von), SITH has been used in systems of energy
accelerator, current-source inverter and high-frequency
power conversion, etc

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 THE MAHARAJA SAYAJIRAO UNIVERSITY OF BARODA, ME, INDUSTRIAL ELECTRONICS

References
 www.wikipedia.org
 “Present status of SIThy” shimizu,sekiya,Iidal NGK
insulators
 “Power electronics handbook” by M.Rashid
 “Recent development of the SIThy and its applications”
 Evaluation of Modern Power Semiconductor Devices and
Future Trends of Converters by Bimal K. Bose, Fellow,
ZEEE .

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