MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.

1mΩ
MDS3604
Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ

General Description Features

The MDS3604 uses advanced MagnaChip’s MOSFET
VDS = -30V
Technology to provide low on-state resistance.
ID = -11A @VGS = -10V

RDS(ON)
This device is suited for Power Management and load < 10.0mΩ @VGS = -20V
switching applications common in Notebook Computers < 12.1mΩ @VGS = -10V
and Portable Battery Packs. < 18.3mΩ @VGS = -5V

Applications

Load Switch

General purpose applications

Smart Module for Note PC Battery

D
5(D)
6(D)
7(D)
8(D)

4(G) G
3(S)
2(S)
1(S)
S

Absolute Maximum Ratings (Ta =25oC unless otherwise noted)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGSS ±25 V
Continuous Drain Current (Note 1) ID -11 A
Pulsed Drain Current IDM -44 A
Power Dissipation PD 2.5 W
Single Pulse Avalanche Energy (Note 2) EAS 84.5 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics

Characteristics Symbol Rating Unit

Thermal Resistance, Junction-to-Ambient (Note 1) RθJA 50 o
C/W
Thermal Resistance, Junction-to-Case RθJC 25

May. 2011 Version 1.1 1 MagnaChip Semiconductor Ltd.

 MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ
Ordering Information

Part Number Temp. Range Package Packing Quantity RoHS Status

o
MDS3604URH -55~150 C SOIC-8 Tape & Reel 3000 units Halogen Free

Electrical Characteristics (Ta = 25oC unless otherwise noted)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = -250µA, VGS = 0V -30 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.0 -1.8 -3.0
Drain Cut-Off Current IDSS VDS = -30V, VGS = 0V - -1
µA
Gate Leakage Current IGSS VGS = ±25V, VDS = 0V - - ±0.1
VGS = -20V, ID = -12A - 8.6 10
mΩ
Drain-Source ON Resistance RDS(ON) VGS = -10V, ID = -12A - 10 12.1
VGS = -5V, ID = -10A 14.6 18.3
Forward Transconductance gFS VDS = -5V, ID = -10A 25.5 - S
Dynamic Characteristics
Total Gate Charge Qg - 30.5 -
VDS = -15V, ID = -12A
Gate-Source Charge Qgs - 5.2 - nC
VGS = -10V
Gate-Drain Charge Qgd - 7.0 -
Input Capacitance Ciss - 1433 -
VDS = -15V, VGS = 0V,
Reverse Transfer Capacitance Crss - 212 - pF
f = 1.0MHz
Output Capacitance Coss - 338 -
Turn-On Delay Time td(on) - 15.2 -
Turn-On Rise Time tr VGS = -10V ,VDS = -15V, - 12.9 -
ns
Turn-Off Delay Time td(off) RL = 1.25Ω, RGEN = 3Ω - 50.6 -
Turn-Off Fall Time tf - 34.6 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = -1A, VGS = 0V - -0.73 -1.0 V
Body Diode Reverse Recovery Time trr - 38.5 ns
IF = -12A, di/dt = 100A/µs
Body Diode Reverse Recovery Charge Qrr - 35.9 - nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7)

2. Starting TJ=25°C, L=1mH, IAS= -13A VDD=-20V, VGS=-10V.

May. 2011 Version 1.1 2 MagnaChip Semiconductor Ltd.

 MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ
50 25

45 -10.0V

40 20
-5.0V
-4.0V
-6.0V
35
-8.0V
VGS=-5V

RDS(ON) [mΩ ]
30 15
-ID [A]

25
VGS=-3.5V VGS=-10V
20 10

15

10 5
VGS=-3.0V
5
VGS=-2.5V
0 0
0.0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40
-VDS [V] -ID [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

1.8 30
*Note; ID=-12A
*Note ; ID=-12A
Drain-Source On-Resistance [mΩ ]

1.6
25
RDS(ON), (Normalized)

1.4
RDS(ON) [mΩ ]

20
VGS=-10V
1.2

15
1.0

10
0.8

0.6 5
-50 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 9 10
TJ, Junction Temperature [℃] -VGS [V]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage

30
* Note ; VDS=-5V ※ Notes :
VGS = 0V
25
-IS, Reverse Drain Current [A]

20 1
10
-ID [A]

15

10

5 0
10

0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

-VGS [V] -VSD, Source-Drain voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature

May. 2011 Version 1.1 3 MagnaChip Semiconductor Ltd.

 MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ
10 2.5n
* Note :VDS = -15V Ciss = Cgs + Cgd (Cds = shorted)
ID = -12A Coss = Cds + Cgd
Crss = Cgd
8 2.0n

Capacitance [pF]
Ciss
6 1.5n
-VGS [V]

4
1.0n

※ Notes ;
1. VGS = 0 V
2 Coss 2. f = 1 MHz
500.0p
Crss

0
0 10 20 30 40 0.0
0 5 10 15 20 25 30
-Qg [nC]
-VDS [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

2
10 16
100 us
14
1 ms

10
1 10 ms 12
100 ms
1s 10
Operation in This Area
10s
is Limited by R DS(on)
-ID [A]

100s
-ID [A]

0
10 8
DC

-1
10 4

Single Pulse
Rθ ja=50℃/W
2
Ta=25℃
-2
10 0
-1 0 1 2
10 10 10 10 25 50 75 100 125 150

-VDS [V] Ta [℃]

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.
Ambient Temperature

1
10
Zθ Ja, Normalized Thermal Response [t]

0
10
D=0.5

0.2

-1
0.1
10 * Notes :
0.05 Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JA* Rθ JA(t) + TA
RΘ JA=50℃/W
0.02

0.01
-2
10

single pulse

-5 -4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [s]

Fig.11 Transient Thermal Response Curve

May. 2011 Version 1.1 4 MagnaChip Semiconductor Ltd.

 MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ
Physical Dimensions

8 Leads, SOIC

Dimensions are in millimeters unless otherwise specified

May. 2011 Version 1.1 5 MagnaChip Semiconductor Ltd.

 MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

May. 2011 Version 1.1 6 MagnaChip Semiconductor Ltd.