AO4304

30V N-Channel MOSFET

General Description Product Summary

The AO4304 combines advanced trench MOSFET VDS 30V

technology with a low resistance package to provide ID (at VGS=10V) 18A
extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) < 6.0mΩ
and battery protection applications.
RDS(ON) (at VGS = 4.5V) < 7.6mΩ

100% UIS Tested

100% Rg Tested

SOIC-8
D
Top View Bottom View
D
D
D
D

G
G
S S
S
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C 18
ID
Current TA=70°C 14 A
C
Pulsed Drain Current IDM 200
Avalanche Current C IAS, IAR 35 A
Avalanche energy L=0.1mH C EAS, EAR 61 mJ
TA=25°C 3.6
PD W
Power Dissipation B TA=70°C 2.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 27 35 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 52 65 °C/W
Maximum Junction-to-Lead Steady-State RθJL 12 15 °C/W

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 AO4304

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 1.9 2.4 V
ID(ON) On state drain current VGS=10V, VDS=5V 200 A
VGS=10V, ID=15A 4.1 6
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 6.5 9.5
VGS=4.5V, ID=10A 5 7.6 mΩ
gFS Forward Transconductance VDS=5V, ID=15A 90 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1275 1598 1920 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 215 308 400 pF
Crss Reverse Transfer Capacitance 90 154 215 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.7 1.5 2.3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 19 24 29 nC
Qg(4.5V) Total Gate Charge 8.5 11.1 14 nC
VGS=10V, VDS=15V, ID=15A
Qgs Gate Source Charge 4 5.2 6.5 nC
Qgd Gate Drain Charge 3 5.6 8 nC
tD(on) Turn-On DelayTime 7.3 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1Ω, 3 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 25 ns
tf Turn-Off Fall Time 5.3 ns
trr Body Diode Reverse Recovery Time IF=15A, dI/dt=500A/µs 7 9.5 12 ns
Qrr Body Diode Reverse Recovery Charge IF=15A, dI/dt=500A/µs 14 17.5 21 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AO4304

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 80
10V
4.5V VDS=5V

60 3.5V 60
ID (A)

ID(A)
40 40

3V
20 20 125°C
25°C
VGS=2.5V
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

8 2.2

Normalized On-Resistance 2
VGS=4.5V VGS=10V
6 ID=15A
1.8
Ω)
RDS(ON) (mΩ

1.6 17
4
5
VGS=10V 1.4
2
2
1.2
VGS =4.5V
10
ID=10A
1

0 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175 200
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

16 1.0E+02
ID=15A
14 1.0E+01
12 40
1.0E+00
10
Ω)

125°C
RDS(ON) (mΩ

IS (A)

125°C 1.0E-01
8
1.0E-02
6 25°C

4 1.0E-03

2 25°C 1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.40.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AO4304

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2500

8 2000
VDS=15V Ciss

Capacitance (pF)
ID=15A
VGS (Volts)

6 1500

4 1000

2 500 Coss
Crss

0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000 1000.0
IAR (A) Peak Avalanche Current

TA=100°C
100.0

100 RDS(ON) 1ms

TA=25°C
ID (Amps)

10.0 limited
TA=125°C 10ms
10ms
1.0
10 TA=150°C DC
TJ(Max)=150°C 10s
0.1
TA=25°C

1 0.0
1 10 100 1000 0.01 0.1 1 10 100
µs)
Time in avalanche, tA (µ VDS (Volts)
Figure 9: Single Pulse Avalanche capability
(Note C) Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)

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 AO4304

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
Zθ JA Normalized Transient

D=Ton/T In descending order

Thermal Resistance

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1 RθJA=65°C/W

0.1

PD
0.01
Single Pulse Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

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 AO4304

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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