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General Description
FEATURES
・VDSS(Min.)= 200V, ID= 1A
・Drain-Source ON Resistance : RDS(ON)=1.05 Ω(max) @VGS =10V
・Qg(typ.) =2.9nC
・Vth(Max.)= 2V
PIN CONNECTION
Static
Drain-Source Breakdown Voltage BVDSS ID=250μA, VGS=0V 200 - - V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250μA, Referenced to 25℃ - 0.2 - V/℃
Drain Cut-off Current IDSS VDS=200V, VGS=0V, - - 10 μA
Gate Threshold Voltage Vth VDS=VGS, ID=250μA 1.0 - 2.0 V
Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA
VGS=10V, ID=0.5A - 0.85 1.05
Drain-Source ON Resistance RDS(ON) Ω
VGS=5V, ID=0.5A 0.89 1.10
Dynamic
Total Gate Charge Qg - 2.9 3.8
VDS=150V, ID=3.6A
Gate-Source Charge Qgs - 0.6 - nC
VGS=5V (Note4,5)
Gate-Drain Charge Qgd - 2.2 -
Turn-on Delay time td(on) - 10 -
VDD=100V, ID=3.6A
Turn-on Rise time tr - 20 -
RG=25Ω (Note4,5) ns
Turn-off Delay time td(off) - 15 -
VGS=5V
Turn-off Fall time tf - 15 -
Input Capacitance Ciss - 170 220
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 25 - pF
Reverse Transfer Capacitance Crss - 4.0 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 1
VGS<Vth A
Pulsed Source Current ISP - - 4
Diode Forward Voltage VSD IS=1A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=3.6A, VGS=0V, - 100 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/㎲ - 0.30 - μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 78mH, IS=1A, VDD=50V, RG = 25Ω, Starting Tj = 25℃.
Note 3) IS ≤2A, dI/dt≤300A/㎲, VDD≤BVDSS, Starting Tj = 25℃.
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
KF4N20LW
VGS = 3V
0 2 4 6 8
3.0
2.5
2.0
1.5
1.0
0.5
1000 12
ID=4A
100 8
6
Coss VDS = 160V
10 4
Crss 2
1 0
0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 6 7 8
101
10µs 0.8
100µs
10ms 0.4
10-1 100ms
Tc= 25 C 0.2
Tj = 150 C
2 Single pulse DC
0
10- 2
10
0
10
1
10 103 0 25 50 75 100 125 150
102
Duty=0.5
Transient Thermal Resistance
101 0.20
0.10
0.05
PDM
100 0.02
t1
0.01
t2
10-2
10-5 10-4 10-3 10-2 10-1 100 101 102 103
TIME (sec)
5V
RL
0.8 VDSS
ID
1.0 mA
Q
VDS Qgs Qgd
Qg
VGS
1 BVDSS
EAS= LIAS2
2 BVDSS - VDD
BVDSS
L
IAS
50V
25Ω
VDS ID(t)
Time
tp
Fig14. Resistive Load Switching
VDS
90%
RL
0.5 VDSS
VGS 10%
td(off)
25 Ω td(on) tr
VDS tf
ton toff
VGS
10V
IRM
IS
Body Diode Reverse Current
0.5 VDSS
VDS Body Diode Recovery dv/dt
(DUT)
driver VSD
VDD
10V VGS
Body Diode Forword Voltage drop