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1. Explain the operation of E-H plane Tee junction. Why is a hybrid E-H plane.
2. The scattering parameters of a two port are given as: S11 = 0 = S22, S12 = 0.3+j0.4 = S21. Find the
distance that the position of port 1 should be shifted to the left so that S12 and S21 will be real numbers,
given β = 34.3 rad/m.
3. Tee referred to as Magic Tee? Derive the scattering matrix for E-H plane Tee.
4. Define microwave circulator. With neat diagram explain the working of four port circulator using two
magic tees.
5. Obtain the S-matrix of a four port Hybrid T-network
6. Explain the Waveguide Corners, Bends and Twists in waveguide components.
7. A signal of power 32 mW is fed into one of the collinear ports of a lossless H Plane Tee.
Determine the powers in the remaining ports when other ports are terminated by means of matched loads.
8. A symmetric directional coupler with infinite directivity and a forward attenuation of 20 dB is used to
monitor the power delivered to a load Zl as shown in Fig 1. Bolometer 1 introduces a VSWR of 2.0 on arm
4; bolometer 2 is matched to arm 3. If bolometer 1 reads 8 mW and bolometer 2 reads 2 mW, find (i) the
amount of power dissipated in the load Zl (ii) the VSWR on arm 2.

U2

Enlist the criterion of band structure in a semiconductor which must satisfy to exhibit negative resistance.
Briefly explain each on the basis of Ridley-WatkinsHilsum two-valley theory.

Describe physical structure of a TRAPATT diode. Also give its principle of operation in brief.

An IMPATT diode has a junction capacitance (Cj) of 0.5pF and package inductance (Lp) of
0.5nH. if the breakdown voltage is 100V and bias current is 100mA, determine the resonant
frequency and efficiency. Assume the RF peak current as 0.8A and load resistance RL as 2 Ohm.

What is Gunn diode? Write the principle of operation with proper diagram. Describe the
different modes of operation briefly.

With neat energy band diagram, explain Ridley-Watkins-Hilsum (RWH) theory in GUNN diode.

An n-type GaAs Gunn diode has the following parameters:

vd = 2.5 x 105 m/s; |µn| = 0.015 m2/V.s; εr =13.1
Determine the criterion for classifying the modes of operation.

Explain the principle of operation of a tunnel diode. Draw its I-V characteristics.
U3

The parameters of a two cavity amplifier klystron are as follows: Beam voltage
V 0 =1200 V , beam current I 0 = 28 mA , frequency f = 8 GHz, gap spacing in
either cavity d =1 mm, spacing between the two cavities L = 4 cm and effective
shunt resistance
Rsh = 40kΩ (excluding beam loading). Find:
(i) input microwave voltage V1 in order to generate a maximum output voltage V2
(including the finite transit-time effect through the cavities)
(ii) voltage gain (neglecting the beam loading in the output cavity)
(iii) calculate the efficiency of the amplifier (neglecting the beam loading).

A four cavity klystron VA-628 has the following parameters:

Bam voltage (v0) = 14.5kV
Beam Current (I0) = 1.4A
Operation frequency (f) = 10GHz
DC electron charge density (ρ0) = 10-8c/m 3

Velocity perturbations (V) = 105 m/sec.

Compute the
(i) DC electron velocity, (ii) the DC phase constant, (iii) the plasma frequency, and (iv) the
reduced plasma frequency for R = 0.4.

A TWT operates under the following parameters: Beam Voltage Vo=3KV.

Beam current Io=30mA, characteristic impedance of helix Zo=10Ω, circuit
length N=50, Operating Frequency=10GHz. Determine
(i) The gain parameter C.
(ii) The output power gain Ap in dB.

With neat schematic and applegate diagram, explain the working of Reflex Klystron.

A Reflex klystron operates under the following conditions:

VO = 600 volts, α = 1mm, Rsh = 15 KΩ, e/m=1.759 x1011 , fr = 9 GHz The tube is operating at
fvfr at the peak of the n = 2 mode or 1 ¾ mode. The transit time through the gap and beam
loading can be neglected. Find the value of repeller voltage Vr.

Write the schematic diagram of two cavity klystron amplifier and explain the velocity
modulation process.

U4

Describe briefly fabrication techniques for a monolithic microwave integrated circuit.

Explain the different techniques used in fabrication of MMIC

Write a short note on hybrid integrated circuit fabrication.

Explain the need of microstrip lines. Discuss its various characteristics.

Describe briefly coplanar and shielded strip lines.

Draw the schematic diagram and field pattern of micro strip line. Write the
expression for characteristic impedance of micro strip line and mention the
limitations of the equation.

A lossless parallel strip line has a conducting strip width w. The substrate
dielectric separating the two conducting strips has a relative dielectric constant
εrel of 6 and a thickness d of 4mm.Calculate

(i) The required width w of the conducting strip in order to have a characteristic
impedance of 50Ω.
(ii) The strip line capacitance.
(iii) The strip line inductance.
(iv) The phase velocity of the wave in the parallel strip line.

List the various techniques by which monolithic microwave integrated circuits

can be fabricated. Explain lithography.

Describe a thin film planar resistor and express the resistance in terms of its
parameters.

a. What is a substrate? What are the characteristics of an ideal substrate material? (6)

b. What for resistive materials are used and write the properties of a good microwave resistor? (4)
c. Explain thin film formation. (6)

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