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Features
· Epitaxial Planar Die Construction
NEW PRODUCT
SCHEMATIC DIAGRAM
Marking Information
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
IC/IB = 10
Pd, POWER DISSIPATION (MILLIWATTS)
200
0.1
75°C
150
-25°C
25°C
100
0.01
50
0
0.001
-50 0 50 100 150 0 10 20 30 40 50
TA, AMBIENT TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA)
Fig. 1 Derating Curve Fig. 2 VCE(SAT) vs. IC
1000 5
IE = 0mA
hFE, DC CURRENT GAIN (NORMALIZED)
VCE = 10
4
COB, CAPACITANCE (pF)
75°C
100
25°C
3
-25°C
2
10
0
1 0 5 10 15 20 25 30
1 10 100
IC, COLLECTOR CURRENT (mA)
VR, REVERSE BIAS VOLTAGE (V)
Fig. 3 DC CURRENT GAIN Fig. 4 Output Capacitance
100 10
VO = 0.2
75°C
IC, COLLECTOR CURRENT (mA)
25°C
10
Vin, INPUT VOLTAGE (V)
-25°C
-25°C
75°C
1 1
25°C
0.1
0.01 1
0 1 2 3 4 5 6 7 8 9 10
0 10 20 30 40 50
Vin, INPUT VOLTAGE (V) IC, COLLECTOR CURRENT (mA)
Fig. 5 Collector Current Vs. Input Voltage Fig. 6 Input Voltage vs. Collector Current