AEC Lecture:

Introduction to the Course

Anil Kumar Bhat

Department of Electronics and Communication Engineering
N. M. A. M. Institute of Technology
Nitte, Karkala - 574110

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 Introduction Course Details

Course Details

Course Details
Subject Name Analog Electronic Circuits
Subject Code 17EC302
Credits 4
Contact Hours 4+1/week

Mark Distribution
MSE-1 20
MSE-2 20
Tasks/Assignments/Quiz 10
SEE 50

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 Introduction Course Outcomes

Course Outcomes

Course Outcomes
CO1 Analyse and Design Clipper and Clamper circuits using Diodes; Design
Circuits using LEDs, Derive the small signal model for BJT.
CO2 Explain the structure of a MOSFET and its operation; Derive the
Current-Voltage characteristics; Define body effect and other non-ideal
behaviour in MOSFET
CO3 Analyse or Design a discrete transistor amplifier for given specifications
CO4 Analyse or Design a Current Mirror Circuit; Explain the operation of
Differential amplifiers; Analyse Multistage Amplifiers
CO5 Derive the high frequency model for a transistor; Explain the frequency
response of CS and CE amplifiers; Explain the effects of negative
feedback; Compare the types of Feedback topologies; Design RC and LC
Oscillators; Classify and analyse the Output stage amplifier circuits

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 Introduction Reference Books

Study Materials

Text Books
T1 Robert L. Boylestad and Louis Nashelsky, “Electronic Devices and
Circuit Theory”, Pearson, 10th Edition, 2013
T2 Behzad Razavi, “Fundamentals of Microelectronics”, Wiley, 2013
T3 A.S. Sedra, K.C Smith, “Microelectronic circuits”, Oxford
University Press, 2004
Online Sources
1 http://www.nptel.ac.in/courses/117101106/
2 https://www.edx.org/course/
circuits-electronics-1-basic-circuit-mitx-6-002-1x-0
3 https://www.edx.org/course/
circuits-electronics-2-amplification-mitx-6-002-2x-0
4 https://www.edx.org/course/
electronic-materials-devices-mitx-3-15-1x-0
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 Introduction Class Rules

Class Rules

1 Strictly No Mobiles in Class

2 Interaction between Me and you is must
3 Interaction between you and your friends need to be avoided as much
as possible
4 If you have doubts please ask, else it would be considered that you
have understood
5 Timely submission of Assignment is a must
6 Valuation is generally considered Strict so prepare well and score
well.
7 No grace marks
8 No grace Attendance

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 Introduction Unit-1 Syllabus

Unit-1: Diode Circuits and BJT Models

1 Diode Fundamentals, Piecewise Linear Equivalent circuit

2 Transition and Diffusion Capacitance
3 Light Emitting Diodes
4 Diode Clippers
5 Diode Clampers
6 Bipolar Transistor characteristics and Models

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 Introduction Unit-2 Syllabus

Unit-2: Physics of MOS Transistors

1 Structure of MOSFET
2 Operation of MOSFET
i IV Characteristics
ii Channel Length Modulation
iii MOS Transconductance
iv Velocity Saturation
v Other Second-order Effects
3 MOS Device Models
4 PMOS Transistor
5 Comparison of Bipolar and MOS

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 Introduction Unit-3 Syllabus

Unit-3: Transistor Amplifiers

1 Operating Point Analysis and Design

i Simple Biasing
ii Resistive Divider Biasing
iii Self Biasing
2 Common Emitter Topology
i Analysis of CE core
ii CE core with Emitter Degeneration
iii CE stage with Biasing
3 Emitter Follower
4 Common Source:
i Analysis of CS Core
ii CS Stage with Current Source Load
iii CS Stage with Diode Connected Load
iv CS Stage with Degeneration
v CS Stage with Biasing
5 Source Follower
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 Introduction Unit-4 Syllabus

Unit-4: Differential Amplifiers

1 Current Mirrors
2 Differential Amplifiers: Introduction
3 Bipolar Differential Pair
i Qualitative Analysis
ii Large Signal Analysis
iii Small Signal Analysis
4 MOS Differential Pair
i Qualitative Analysis
ii Large Signal Analysis
iii Small Signal Analysis
5 Common Mode Rejection
6 Differential Pair with Active Load: Qualitative Analysis

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 Introduction Unit-5 Syllabus

Unit-5: Frequency Response, Feedback Concepts And

Power Amplifiers

1 High-Frequency Model of BJT and MOSFET

2 Transit Frequency
3 Low Frequency Response of CE and CS Stage
4 Feedback concepts, Types
5 Oscillator operation, Phase shift oscillator, Tuned oscillator circuit
6 Classification of Output Stages; Class A, Class B, Class AB

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 Review of Semiconductor Diodes

P-N Junction Diode

The Semiconductor diode is

formed by simply bringing n-
and p- type materials
together.
At the instant the two
materials are “joined”, the
electrons and holes in the
region of the junction
combine [Recombination],
resulting in a region of
uncovered positive and
negative ions called the
depletion region

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 Review of Semiconductor Diodes

P-N Junction Diode: Biasing

The Semiconductor diode is a two terminal device.

Application of Voltage across the terminals of a device is known as
Biasing.
Three possible Bias conditions

Zero Bias Reverse Bias Forward Bias

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 Review of Semiconductor Diodes

Diode characteristic curve

The maximum reverse-bias potential that can be applied before

entering the Zener region (Reverse breakdown) is called the peak
inverse voltage (PIV) or peak reverse voltage (PRV) or breakdown
voltage.

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 Review of Semiconductor Diodes

P-N Junction Diode Currents

In the absence of Applied Bias voltage, the net flow of charge in

any one direction for a semiconductor diode is zero.
The current that exists under reverse-bias condition is called the
reverse saturation current [Is ]
This current is due to minority carriers
It is known as saturation current as it reaches its maximum level
quickly and does not change significantly with increase in reverse
bias potential.
very small in the order of nA or pA
The current in the forward bias condition in nonlinear and changes
with respect to the applied bias potential as given in the equation
VD
ID = Is (e ηVT − 1)
Tk
where VT = 11600 is the voltage equivalent of temperature
Tk is the Temperature in kelvin scale
η = 1 for Ge and η = 2 for Si

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 Review of Semiconductor Diodes

Reverse Breakdown

The reverse-bias potential that results in sharp increase in current

in the direction opposite to that of normal flow is called the
Zener potential (Vz ).

Avalanche Breakdown Zener Breakdown

Seen in diodes having large Vz Seen in diodes having small Vz
Higher reverse voltage causes the
Higher reverse voltage causes a
velocity of minority carriers to
strong electric field at the
increase, thereby increasing the
junction that can disrupt the
associated kinetic energy,
bonding forces within the atom
leading to release of additional
to “generate” carriers.
carriers through collisions.
Ionization by collision. Ionization by Electric Field.

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 Review of Semiconductor Diodes

Diode Resistance

The resistance of the diode changes as the operating point is

moved due to non-linear characteristic curve.

DC or Static AC or Dynamic Reverse Resistance RR

Resistance Resistance
It is the ratio of It is the ratio of Under the Reverse
diode voltage to the change in diode biasing condition,
diode current at any voltage to the the opposition
point of its change in diode offered by the diode
characteristic curves. current. It is defined to the reverse
It is defined at a at a point on the current is known as
point on the characteristic curves Reverse Resistance.
characteristic curves over a tangent.
VD ∆VD VR
RD = rD = rD =
ID ∆ID Is

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 Review of Semiconductor Diodes

Diode Forward Resistance

Static Resistance

VD OA
RD = =
ID OB

Dynamic Resistance

∆VD CE 26mV
rD = = ≈
∆ID DF ID

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 Review of Semiconductor Diodes

Diode Model: Ideal Diode Model

An ideal diode acts as a

unilateral switch
When forward biased the diode
acts as a short circuit.
When reverse biased, it acts as
an open circuit
No power is dissipated in an
ideal diode biased in either
direction since either the voltage
across it is zero (forward biased)
or the current through it is zero
(reverse biased)

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 Review of Semiconductor Diodes

Diode Model: Diode with Series Voltage Source

A small signal approximation to

a real diode is a series circuit
containg an ideal diode, a
battery.
The battery introduces a small
offset voltage, VD , that must be
exceeded before the diode begins
conducting under forward bias
conditions.
The value of VD , is determined
by the type of semiconductor
used in the p-n junction.

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 Review of Semiconductor Diodes

Diode Model: Piecewise Linear Model

A more realistic approximation

to a real diode is a series circuit
containg an ideal diode, a
battery and a resistor.

The battery introduces a small

offset voltage, VD , that must be
exceeded before the diode begins
conducting under forward bias
conditions.

The resistor approximates the

semiconductor resistance under
forward bias and determines the
amount of power dissipation in
the diode.

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