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1. Product profile
1.2 Features
■ High sensitivity in all four quadrants.
1.3 Applications
■ General purpose bidirectional switching ■ Phase control.
2. Pinning information
Table 1: Pinning
Pin Description Simplified outline Symbol
1 main terminal 1 (T1)
mb
2 main terminal 2 (T2) T2 T1
G
3 gate (G) sym051
mb isolated
1 2 3
SOT186A (TO-220)
Philips Semiconductors BT139X-600E
Triacs; sensitive gate
3. Ordering information
Table 2: Ordering information
Type number Package
Name Description Version
BT139X-600E - plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A
3 lead TO-220 ‘full pack’
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage [1] - 600 V
IT(RMS) RMS on-state current full sine wave; Ths ≤ 38 °C - 16 A
ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C
prior to surge
t = 20 ms - 155 A
t = 16.7 ms - 170 A
I2t I2t for fusing t = 10 ms - 120 A2s
dIT/dt repetitive rate of rise of on-state current after ITM = 20 A; IG = 0.2 A;
triggering dIG/dt = 0.2 A/µs
T2+ G+ - 50 A/µs
T2+ G− - 50 A/µs
T2− G− - 50 A/µs
T2− G+ - 10 A/µs
IGM peak gate current - 2 A
VGM peak gate voltage - 5 V
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature −40 +150 °C
Tj junction temperature - 125 °C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
9397 750 13439 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
001aab096
25 25
Ptot α= Ths(max)
(W) 180 (°C)
20 45
120
90
15 60 65
30
10 85
α
5 α 105
0 125
0 5 10 15 20
IT(RMS) (A)
α = conduction angle.
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values.
001aab102
160
ITSM IT ITSM
(A)
120
T
t
Tj(initial) = 25 °C max
80
40
0
1 10 102 103
n
f = 50 Hz.
Fig 2. Non-repetitive peak on-state current as a function of the number (n) of sinusoidal current cycles;
maximum values.
9397 750 13439 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
001aab092
103
ITSM
(A)
102
(1)
IT ITSM
(2)
T
t
Tj(initial) = 25 °C max
10
10−2 10−1 1 10 102
T (ms)
tp ≤ 20 ms.
(1) dIT/dt limit.
(2) T2− G+ quadrant.
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values.
001aab090 001aab095
50 20
IT(RMS) IT(RMS)
(A) (A) (1)
40
15
30
10
20
5
10
0 0
10−2 10−1 1 10 −50 0 50 100 150
surge duration (s) Ths (°C)
9397 750 13439 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-hs) thermal resistance junction full or half cycle with heatsink - - 4.0 K/W
to heatsink compound
full or half cycle without heatsink - - 5.5 K/W
compound
Rth(j-a) thermal resistance junction in free air - 55 - K/W
to ambient
001aab097
10
Zth(j-hs)
(K/W) (1)
(2)
1
(3)
(4)
10−1
PD
10−2
tp t
10−3
10−5 10−4 10−3 10−2 10−1 1 10
tp (s)
6. Isolation characteristics
Table 5: Isolation limiting values and characteristics
Ths = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Visol RMS value isolation voltage from all three f = 50 to 60 Hz; sinusoidal - - 2500 V
terminals to external heatsink waveform; R.H. ≤ 65 %;
clean and dust free
Cisol capacitance from pin 2 to external heatsink f = 1 MHz - 10 - pF
9397 750 13439 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
7. Characteristics
Table 6: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; Figure 8
T2+ G+ - 2.5 10 mA
T2+ G− - 4 10 mA
T2− G− - 5 10 mA
T2− G+ - 11 25 mA
IL latching current VD = 12 V; IGT = 0.1 A;
Figure 10
T2+ G+ - 3.2 30 mA
T2+ G− - 16 40 mA
T2− G− - 4 30 mA
T2− G+ - 5.5 40 mA
IH holding current VD = 12 V; IGT = 0.1 A; - 4 45 mA
Figure 11
VT on-state voltage IT = 20 A; Figure 9 - 1.2 1.6 V
VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Figure 7 - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 °C
ID off-state leakage VD = VDRM(max); Tj = 125 °C - 0.1 0.5 mA
current
Dynamic characteristics
dVD/dt critical rate of rise of VDM = 67 % VDRM(max); - 50 - V/µs
off-state voltage Tj = 125 °C; exponential
waveform; gate open circuit
tgt gate controlled ITM = 20 A; VD = VDRM(max); - 2 - µs
turn-on time IG = 0.1 A; dIG/dt = 5 A/µs
9397 750 13439 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
001aab101 001aab448
1.6 3
(4)
0.8 1
0.4 0
−50 0 50 100 150 −50 0 50 100 150
Tj (°C) Tj (°C)
001aab094 001aab100
50 3
IT
(A) (1) (2) (3) IL(Tj)
40 IL(25°C)
2
30
20
1
10
0 0
0 1 2 3 −50 0 50 100 150
VT (V) Tj (°C)
VO = 1.195 V.
Rs = 0.018 Ω.
(1) Tj = 125 °C; typical values.
(2) Tj = 25 °C; maximum values.
(3) Tj = 125 °C; maximum values.
Fig 9. On-state current characteristics. Fig 10. Normalized latching current as a function of
junction temperature.
9397 750 13439 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
001aab099 001aab452
3 103
IH(Tj)
IH(25°C) dVD /dt
(V/µs)
2
102
0 10
−50 0 50 100 150 0 50 100 150
Tj (°C) Tj (°C)
Fig 11. Normalized holding current as a function of Fig 12. Critical rate of rise of off-state voltage as a
junction temperature. function of junction temperature; minimum
values.
8. Package information
Epoxy meets requirements of UL94 V-0 at 1⁄8 inch.
9397 750 13439 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9. Package outline
E A
P A1
q
D1 mounting
T base
L2 L1
K
Q
b1
L b2
1 2 3
b w M c
e
e1
0 5 10 mm
scale
02-03-12
SOT186A 3-lead TO-220F
02-04-09
9397 750 13439 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Level Data sheet status [1] Product status [2] [3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
9397 750 13439 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
6 Isolation characteristics . . . . . . . . . . . . . . . . . . 5
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Package information . . . . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information . . . . . . . . . . . . . . . . . . . . 11