SIDDHARTH INSTITUTE OF ENGINEERING &TECHNOLOGY:: PUTTUR

ELECTRONICS & COMMUNICATON ENGINEERING

RADIO FREQUECY INTEGRATED CIRCUITS (RFIC)
QUESTION BANK
UNIT -1: INTRODUCTION RF SYSTEMS
Essay type Questions
1. A) Give the importance of RF System in Communications and write in detail. [CO1 [L1] [8M]
B) Give the importance of LNA in RF system? [CO1] [L1][2M]
2. Discuss the basic Architectures of the RF System in detail. [CO1] [L2][10M]
3. Interpret he reflections in transmission medium of RF System. [CO1] [L3][10M]
4. A) The maximum power transfer in networks is deciding the distribution of power to other networks
give the details on it. [CO1] [L3][5M]
B) State and prove the Maximum power is transfer theorem. [CO1] [L3][5M]
5. A) Write about RLC Networks with network examples [CO1] [L2][5M]
B) Derive quality factor for parallel RLC network. [CO1] [L4][5M]
6. A) Discuss the importance of matching in RF Systems. [CO1] [L2][5M]
B) Discuss how three degree of freedom is achieved in π –match. [CO1] [L4][5M]
7. Prove that three degree of freedom is achieved using T-match. [CO1] [L4][10M]
8. Draw and explain in detail about IC interconnects of capacitors. [CO1] [L5][10M]
9. Write about interconnects of resistors [CO1] [L2][10M]
10. A) What are the conditions for resonance in parallel RLC network. [CO1] [L2][2M]
B) What is skin effect. [CO1] [L2][2M]
C) Write the importance of matching. [CO1] [L2][2M]
D) Define 'Q' in RF SYSTEMS. [CO1] [L1][2M]
E) Write advantages of π –match over L-match. [CO1] [L2][2M]

Two Marks Questions

1) What is RF System? [CO1] [L1][2M]
2) What are the shapes are there to design RF System? [CO1] [L2][2M]
3) What is the role of RF amplifier in receivers? [CO1] [L2][2M]
4) Give the examples of RF design circuits. [CO1] [L2][2M]
5) Passive IC components having interconnections of capacitors give that cases of interconnection of
capacitors [CO1] [L2][2M]
6) Explain the Hallow shape interconnection of Inductors [CO1] [L2][2M]
7) Why need Quality factor ‘Q’ in RF system? [CO1] [L2][2M]
8) Discuss the Series RLC network with circuit. [CO1] [L2][2M]
9) Get the idea of Parallel RLC network in RF circuits [CO1] [L2][2M]
10) What is matching in networks? [CO1] [L2][2M]
11) What is the importance of Maximum power transfer theorem in network? [CO1] [L2][2M]
12) What is the importance of reflection coefficient (Γ)? [CO1] [L3][2M]
13) In super heterodyne receiver what is the function of RF amplifier [CO1] [L2][2M]
14) What are the types of Resistors in interconnections? [CO1] [L2][2M]
15) Define skin depth in RF Systems [CO1] [L1][2M]
16) Write short notes on π- matching networks [CO1] [L2][2M]
17) Write short notes on T- matching networks [CO1] [L2][2M]
18) What is Square spiral inductor explain it? [CO1] [L2][2M]
19) What is Hallow spiral inductor explain it? [CO1] [L2][2M]
20) Mention the advantages of RF Systems [CO1] [L3][2M]
Objective type Questions

1. In the following which is not discipline to design RF Circuit. [ ]

a) Random signals b) CAD Tools c) Time constant d) Microwave theory.
2. In simple RF Communications Which amplifier are used [ ]
a) Single tuned amplifier b) stagger tuned amplifier c) Multistage amplifier d) Power amplifier
3) To design RF Circuit which is the shape is used [ ]
a) Pentagon b) Hexagon c)triangle d) Rectangle
4) What is the value of Centre frequency in Generic RF transceiver [ ]
a) fc = 3.4 GHz b) 2 GHz c) 2.4 GHz d) 1.4 GHz
5) In parallel RLC tank circuit the quality factor can be find as [ ]
a) Q = ω (Energy stored)/ (Power dissipated) b) Q = (Energy stored)/(Average Power dissipated)
c) Q = ω (Energy stored)/ (Average Power dissipated) d) Q = ω(Energy stored )/(Power dissipated)
6) The average power can be found as [ ]
a) Pavg = I2PK R b) Pavg = 1/2 ( I2PK R2 ) c) Pavg = 1/2 ( I PK R2 ) d) Pavg = 1/2 ( I2PK R )
7) Characteristic impedance of the parallel RLC network [ ]
a) Z0= L/C b) Z0 = √ (L/C) c) Z0 = √ ( LC ) d) Z0 = ( LC )
8) The total energy stored in a parallel RLC network [ ]
a) Etotal = 1/2 C ( I PK R ) b) Etotal = 1/2 ( I PK R )2
c) Etotal = 1/2 C ( I PK R )2 d)Etotal = 1/2 C ( I PK ) 2
9) What is the quality factor for RLC parallel network? [ ]
a) Q = ω0RC b) Q = ω0 / RC c) Q = ω0C d) Q = ω0R
10) Maximum power transferred to load, if [ ]
a) ZL = Z0 b) ZL > Z0 c) ZL < Z0 d) ZL >>Z0
11) In parallel RLC network what is ‘Q’ [ ]
a) Q = ω0 LS / Rs b) Q = LS / Rs c) Q = RS / Ls d) Q = ω0 RS / Ls
12)In parallel RLC network what is LP [ ]
a) LP = (Q2 +1) / Q2 b) LP= LS [(Q2 +1) / Q2] c) LP = LS [(Q2 +1) / Q ] d) LP = LS (Q2 +1)
13) In parallel RLC network what is RP [ ]
a) RP = (Q2 +1 ) b) RP = RS (Q +1 ) c) RP = RS (Q2 +1 ) d) RP = RS
14) In parallel RLC network what is CP [ ]
a) CP = Cs( (Q ) / (Q2 +1 )) b) CP = Cs ( (Q2 ) / (Q +1 ))
c) CP = ( (Q2 ) / (Q2 +1 ) ) d) CP = Cs ( (Q2 ) / (Q2 +1 ) )
15) In L- matching circuits what is the value of RP [ ]
a) RP = LS / C b) RP = ( 1/Rs ) (LS / C) c) RP = ( 1/Rs ) ( C/ LS) d) RP = ( C/ LS)
16) In L- matching circuits what is the value of ‘Q’ [ ]
a) Q = RP / Rs b) Q = Rs / Rp c) Q = √ (Rs / Rp ) d)Q = √ (Rp / Rs )
17) The LNA adds _______ noise by its own. [ ]
a) high b) low c) both d) none
18) Frequency synthesizer synchronizes to ________ [ ]
a) local clock b) small clock c) global clock d)none
19) Parallel RLC network is know as __________ [ ]
a) tank circuit b) filter circuit c) quality circuit d)none
20) The resistance increases owing to a phenomenon known as _____ effect [ ]
a) Active b) proximity c) skin d)none
21) Another name for RFIC is________ [ ]
a) circuit for cellphone b) Cmos c)Ic d)none
22) The quantity √L/C has the dimensions of resistance is called______ [ ]
a) Characteristic impedance b) Input impedance c) Output impedance d) none
23) The peak energy stored in either the capacitor or inductor is [ ]
a) high b) low c) equal d) none
24) At resonance , the voltage across the network is ______ [ ]
a) IinR b)RI2 c)IRV d) none
25) The quality factor for series RLC network is ______ [ ]
a) Q=(√L/C)/R b) Q=(√C/L)/R c) Q=(√C/L)/RC d) none
26) The π-match results from cascading two _______ sections [ ]
a) LC b) T c) L d) none
27) The T-match is particularly useful when the source and termination parasitics are
Primarily ____________ in nature [ ]
a) Capacitive b) inductive c) both d) none
28) The total capacitance per unit area can be increased by using more than one pair of___ [ ]
a) Interconnect layers b) connect layers c) both d) none
29) The most widely used on-chip inductor is____ [ ]
a) linear planar b) circular planar c) spiral planar d) none
30) The inductance of an ______ spiral is a complicated function of geometry [ ]
a) planar b) arbitrary c) circular d) none
31) Maximizing the distance to the substrate minimizes the _____ capacitance between the
Inductor and the substrate [ ]
a) Early b) parallel c) parasitic d)none
32) The _____resistive losses are exacerbated by the skin effect [ ]
a) DC b) AC c) both d) none
33) The consequence is a reduction in the effective cross- section ,increasing the ___ resistance [ ]
a) parallel b) series c) both d) none
34)______ computations based on this modified skin depth formula [ ]
a) Capacitance b) Inductance c) Resistance d) none
35) In addition to the _____ resistive loss, capacitance to the substrate is another conspicuous
Problem of on –chip spirals [ ]
a) Series b) parallel c) both d) none
36) A case of interest is the ______of a single loop of wire [ ]
a) Resistance b) Capacitance c) Inductance d) none
37) If a series RLC network with a Q of _____ is driven at resonance with a one-volt source [ ]
a) 10 b) 100 c) 1000 d) none
38) The rule of thumb is extremely useful for rapidly estimating Q from experimental ____ data [ ]
a) Impulse b) step c) both d) none
39) _____ match is universal equation [ ]
a) L b) T c) π d) none
40) In L-match ,Q is fixed at a value roughly equal to the square root of the ____ ratio [ ]
a) Capacitance b) Resistance c) Transformation d) none
 SIDDHARTH INSTITUTE OF ENGINEERING &TECHNOLOGY:: PUTTUR
ELECTRONICS & COMMUNICATON ENGINEERING
RADIO FREQUECY INTEGRATED CIRCUITS (RFIC)
UNIT -2: A REVIEW OF MOS DEVICE PHYSICS

Essay type Questions

1. a. Give the advantages of MOS Technology. [L2] [CO.2] [2M]
b. For N-Channel MOSFET, prove that drain current in linear region linearly changes with Vds .
[L4][CO.3][8M]
2. Derive the drain current in pentode region for N-Channel MOSFET. [L4][CO.3][8M]
3. a. Derive the characteristic impedance of ideal and lossy transmission line. [L4][CO.3][6M]
b. Derive the reflection coefficient of transmission line. [L4][CO.3][4M]
4. Illustrate Schmitt chart to estimate impedance. [L2][CO.2][10 M]
5. Illustrate how Short circuit constants (SCTs) technique used to estimate the bandwidth of linear
network . [L2][CO.3][10M]
6. Illustrate how Open circuit constants (OCTs) technique used to estimate the bandwidth of linear
network . [L2][CO.3][10M]
7. a. Define Elmore delay. [L2][CO.3][2M]
b. Describe the delay of systems in cascade in terms of moments of impulse response.
[L4][CO.3][8M]
8. a. Derive expression for overall rise time of systems in cascade using rise time addition rule.
[L4][CO.3][8 M]
b. Prove that risetime bandwidth product of first order system is 2.2. [L4][CO.3][2M]
9. a. Explain zeros as bandwidth enhancers. [L2][CO.3][5M]
b. Design the shunt-series amplifier to enhance bandwidth. [L4][CO.3][5M]
10. a. Describe how single tuned amplifier achieves narrow band amplification. [L2][CO.3][6M]
b. Describe how gain of cascaded amplifier changes with ‘n’. [L2][CO.3][4M]
Short Answer Questions
1. Explain “Conductance modulation” in MOSFET. [L1][CO.2][2M]
2. Distinguish long channel and short channel MOSFET. [L2][CO.2][2M]
3. Explain important regimes of operating frequency. [L1][CO.2][2M]
4. Define the reflection coefficient. [L3][CO.2][2M]
5. Brief the bandwidth estimation techniques. [L1][CO.3][2M]
6. Draw the circuit for shunt peaked amplifier. [L3][CO.3][2M]
7. Draw the circuit for shunt-series amplifier. [L3][CO.3][2M]
8. Define rise time. [L1][CO.3][2M]
9. Define delay of the cascading system. [L1][CO.3][2M]
10. State the relation between bandwidth and risetime for first order system . [L2][CO.3][2M]
11. Write the equation drain current in long channel MOSFET. [L1][CO.3][2M]
12. State the relation between ID and Vds in in triode region of operation. [L1][CO.2][2M]
13. Brief the open circuit time constants (OCTs) technique. [L1][CO.3][2M]
14. Brief the short circuit constants (SCTs) techniques. [L1][CO.3][2M]
15. What is the use of smith chart in RF system. [L1][CO.2][2M]
16. Describe how bandwidth of cascaded amplifier changes with ‘n’. [L2][CO.3][2M]
17. Draw the circuit of single tuned amplifier. [L1][CO.2][2M]
18. State the bandwidth of multi stage amplifier. [L1][CO.2][2M]
19. State the role of RF in shunt series amplifier. [L1][CO.2][2M]
20. Brief about shunt series amplifier. [L3][CO.3][2M]
Objective Questions
1. MOSFET is a ________ controlled device [ ]
A. Voltage B. Current C. Power D. None
2. Long channel is actually ____ electric field [ ]
A. High B. Low C. Medium D. None
3. Short channel is actually ____ electric field [ ]
A. Medium B. High C. High D. None
4. The primary high-field effect is_______ [ ]
A. Frequency modulation B. Current Saturation C. Voltage Saturation D. Velocity saturation
5. In long-channel devices, the saturation drain current is corresponding to ___ of the channel. [ ]
A. Pinch-off. B. Vt C. Carrier velocity D.None
6. In short-channel devices, the saturation drain current is corresponding to __of the channel. [ ]
A. Pinch-off. B. Vt C. Carrier velocity D.None
7. _____distinguishes "long-channel" from "short-channel". [ ]
A. Electric field strengths. B.Vgs C.Vds D.None
8. Kirchhoff's voltage and current " laws" are used to approximate_____ regime [ ]
A. Lumped B.Distributed C. Both A and B D. None
9. _________ parameter descriptions of circuits is used for ICs. [ ]
A. Distributed B. Lumped C. Both A and B D. None
10. Net magnetic charge would cause________ in the magnetic field [ ]
A. Convergence B. Curl C. Divergence D. None
11. Changing magnetic field causes _________ in the electric field. [ ]
A. Convergence B. Curl C. Divergence D. None
12. Reduction of "parasitics" leads to ______ bandwidth [ ]
A.Infinite B.Decrease C. Increase D. Zero
13. In ladder network the ratio of Zin to R is known as _______ [ ]
A. Golden ratio B. Golden section C. A or B D. None
14. The characteristic impedance Zo of infinite transmission line [ ]
A. C / L B. √LC C. √L/C2 D. √L/C
15. _____tells us the ratio of voltage to current at anyone point in an infinitely long line. [ ]
A. Reflection coefficient B. Propagation constant C. Characteristic impedance D. None
16. _________ quantifies the line's attenuation properties. [ ]
A. Reflection coefficient B. Propagation constant C. Characteristic impedance D. None
17. Propagation constant y= [ ]
A. √Z/Y B. √Z-Y C. √Z+Y D. √ZY
18. The point Γ= - I in Schmitt chart corresponds to ____ resistance (or reactance). [ ]
A. Infinite B. Minimum C. Maximum D. Zero
19. The point Γ = I in Schmitt chart corresponds to resistance (or reactance. [ ]
A. Infinite B. Minimum C. Maximum D. Zero
20. Most of RF instruments and coaxial cables have standardized impedances of either __ohms [ ]
A. 75 or 100 B. 10 or 40 C. 50 or 75 D. 100 or 75
21. Propagation constant γ = [ ]
A. α-jβ B. α+jβ C. α/jβ D. α2+jβ
22. Since the attenuation is ________ at all frequencies, a lossless line has no bandwidth limit. [ ]
A. Infinite B. Minimum C. Maximum D. Zero
23. If the load impedance equals the characteristic impedance of the line, Γ= [ ]
A. Infinite B. Minimum C. Maximum D. Zero
24. At lower frequencies ___ is a powerful intuitive aid in the design of high-BW amplifiers. [ ]
A. OCTs B.SCTs C. Both A and b D. None
25. A technique that satisfied requirement of large band width at low cost is known as ___ [ ]
A. Shunt peaking B. Series Peaking C. Both A and B D. None
26. The method of open-circuit time constants OCTS is also known as ____time constants. [ ]
A. Infinite value B. "zero value" C. Both A and B D. None
27. _____ identifies which elements are responsible for bandwidth limitation. [ ]
A. SCTs B. OCTs C. Both A and B D. None
28. _____ is only the model that appropriate to high-frequency regime. [ ]
A. SCTs B. OCTs C. Both A and B D. None
29. _____ is only the model that appropriate to low-frequency regime. [ ]
A. SCTs B. OCTs C. Both A and B D. None
30. SCTS are concerned only with those________ that limit low-frequency gain. [ ]
A. Capacitors B. Inductors C. Resistors D. All
31. Overall delay of a cascade of systems is simply the ____ of the individual delays. [ ]
A. Sum B. Product C. Difference D. None
32. First moment of the impulse response defines the____ [ ]
A. Risetime B. Time Delay C. Bandwidth D. None
33. Second moment of the impulse response defines the____ [ ]
A. Risetime B. Time Delay C. Bandwidth D.None
34. Addition rule may be used to _________ the limits of instrumentation. [ ]
A. Extend B. Decrease C. Stable D. None
35. trise= ______ [ ]
A. RC B. 1.1 RC C. 10 RC D. 2.2 RC
36. _____ can be used to enhance the bandwidth [ ]
A. Zeroes B. Poles C. Both A and B D. None
37. An alternative approach to design broadband amplifiers is to use ______ feedback [ ]
A. Positive feedback B. Negative C. Both A and B D. None
38. Shunt peaking uses _________ network [ ]
A. One-port B. Two-port C. Both A and B D. None
39. Shunt-series amplifier can be used to achieve ________ bandwidth [ ]
A. Zero B. Narrow C. Broader D.None
40. Smith chart can be used for matching _______ impedances [ ]
A. Load B. Source C. Both A and B D. Zero