Вы находитесь на странице: 1из 23

Data Sheet No. PD60162 Rev.

IR2106(4)(S) & (PbF)


HIGH AND LOW SIDE DRIVER
Features
• Floating channel designed for bootstrap operation Packages
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V (IR2106(4))
• Undervoltage lockout for both channels 8-Lead SOIC
• 3.3V, 5V and 15V input logic compatible
8-Lead PDIP

• Matched propagation delay for both channels


• Logic and power ground +/- 5V offset.
• Lower di/dt gate driver for better noise immunity
• Outputs in phase with inputs (IR2106) 14-Lead SOIC 14-Lead PDIP
• Also available LEAD-FREE

Description 2106/2301//2108//2109/2302/2304Feature Comparison


The IR2106(4)(S) are high voltage, Cross-
Input conduction
high speed power MOSFET and Part
logic prevention
Dead-Time Ground Pins Ton/Toff
IGBT drivers with independent high logic
and low side referenced output chan- 2106/2301 COM
HIN/LIN no none 220/200
21064 VSS/COM
nels. Proprietary HVIC and latch 2108 Internal 540ns COM
immune CMOS technologies enable HIN/LIN yes 220/200
21084 Programmable 0.54~5µs VSS/COM
ruggedized monolithic construction. 2109/2302
IN/SD yes
Internal 540ns COM
750/200
21094 Programmable 0.54~5µs VSS/COM
The logic input is compatible with
2304 HIN/LIN yes Internal 100ns COM 160/140
standard CMOS or LSTTL output,
down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver
cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high
side configuration which operates up to 600 volts.

Typical Connection up to 600V

VCC

VCC VB
HIN
HIN HO
LIN LIN VS TO
LOAD

COM LO
IR2106 up to 600V

HO
VCC V CC VB
HIN HIN VS
TO
(Refer to Lead Assignments for cor- LIN LIN LOAD
rect pin configuration). This/These
IR21064
diagram(s) show electrical connec- V SS V SS COM
tions only. Please refer to our Appli- LO
cation Notes and DesignTips for
proper circuit board layout.

www.irf.com 1
IR2106(4)(S) & (PBF)

Absolute Maximum Ratings


Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.

Symbol Definition Min. Max. Units


VB High side floating absolute voltage -0.3 625
VS High side floating supply offset voltage VB - 25 VB + 0.3
VHO High side floating output voltage VS - 0.3 VB + 0.3
VCC Low side and logic fixed supply voltage -0.3 25
V
VLO Low side output voltage -0.3 VCC + 0.3
VIN Logic input voltage VSS - 0.3 VCC + 0.3
VSS Logic ground (IR21064 only) VCC - 25 VCC + 0.3
dVS/dt Allowable offset supply voltage transient — 50 V/ns
PD Package power dissipation @ TA ≤ +25°C (8 lead PDIP) — 1.0
(8 lead SOIC) — 0.625
(14 lead PDIP) — 1.6 W
(14 lead SOIC) — 1.0
RthJA Thermal resistance, junction to ambient (8 lead PDIP) — 125
(8 lead SOIC) — 200
°C/W
(14 lead PDIP) — 75
(14 lead SOIC) — 120
TJ Junction temperature — 150
TS Storage temperature -50 150 °C
TL Lead temperature (soldering, 10 seconds) — 300

2 www.irf.com
IR2106(4)(S & (PbF))

Recommended Operating Conditions


The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The VS and VSS offset rating are tested with all supplies biased at 15V differential.

Symbol Definition Min. Max. Units


VB High side floating supply absolute voltage IR2106(4) VS + 10 VS + 20
VS High side floating supply offset voltage Note 1 600
VHO High side floating output voltage VS VB
VCC Low side and logic fixed supply voltage IR2106(4) 10 20 V
VLO Low side output voltage 0 VCC
VIN Logic input voltage VSS VCC
VSS Logic ground (IR21064 only) -5 5
TA Ambient temperature -40 125 °C
Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip
DT97-3 for more details).

Dynamic Electrical Characteristics


VBIAS (VCC, VBS) = 15V, VSS = COM, CL = 1000 pF, TA = 25°C.

Symbol Definition Min. Typ. Max. Units Test Conditions


ton Turn-on propagation delay — 220 300 VS = 0V
toff Turn-off propagation delay — 200 280 VS = 0V or 600V
MT Delay matching, HS & LS turn-on/off — 0 30 nsec
tr Turn-on rise time — 150 220 VS = 0V
tf Turn-off fall time — 50 80 VS = 0V

www.irf.com 3
IR2106(4)(S) & (PBF)

Static Electrical Characteristics


VBIAS (V CC , VBS ) = 15V, V SS = COM and TA = 25°C unless otherwise specified. The VIL, VIH and IIN parameters are
referenced to VSS/COM and are applicable to the respective input leads. The VO, I O and Ron parameters are referenced to
COM and are applicable to the respective output leads: HO and LO.

Symbol Definition Min. Typ. Max. Units Test Conditions


VIH Logic “1” input voltage (IR2106(4)) 2.9 — — VCC = 10V to 20V
VIL Logic “0” input voltage (IR2106(4)) — — 0.8 VCC = 10V to 20V
V
VOH High level output voltage, VBIAS - VO — 0.8 1.4 IO = 20 mA
VOL Low level output voltage, VO — 0.3 0.6 IO = 20 mA
ILK Offset supply leakage current — — 50 VB = VS = 600V
IQBS Quiescent VBS supply current 20 75 130 VIN = 0V or 5V
IQCC Quiescent VCC supply current 60 120 180 VIN = 0V or 5V
IIN+ Logic “1” input bias current µA
VIN = 5V (IR2106(4)) — 5 20
IIN- Logic “0” input bias current
VIN = 0V (IR2106(4)) — — 2
VCCUV+ VCC and VBS supply undervoltage positive going 8.0 8.9 9.8
VBSUV+ threshold
VCCUV- VCC and VBS supply undervoltage negative going 7.4 8.2 9.0
V
VBSUV- threshold
VCCUVH Hysteresis 0.3 0.7 —
VBSUVH
IO+ Output high short circuit pulsed current 120 200 — VO = 0V,
mA PW ≤ 10 µs
IO- Output low short circuit pulsed current 250 350 — VO = 15V,
PW ≤ 10 µs

4 www.irf.com
IR2106(4)(S & (PbF))

Functional Block Diagrams

VB
UV
IR2106 DETECT
R HO
R Q
HV PULSE
LEVEL FILTER S
VSS/COM SHIFTER
HIN LEVEL VS
PULSE
SHIFT GENERATOR

VCC

UV
DETECT
LO

VSS/COM
LIN LEVEL DELAY
SHIFT COM

VB
UV
IR21064 DETECT
R HO
R Q
PULSE
HV
FILTER
LEVEL S
VSS/COM SHIFTER
HIN LEVEL VS
PULSE
SHIFT GENERATOR

VCC

UV
DETECT
LO

VSS/COM
LIN LEVEL DELAY
SHIFT COM

VSS

www.irf.com 5
IR2106(4)(S) & (PBF)

Lead Definitions
Symbol Description
HIN Logic input for high side gate driver output (HO), in phase
LIN Logic input for low side gate driver output (LO), in phase
VSS Logic Ground (IR21064 only)
VB High side floating supply
HO High side gate drive output
VS High side floating supply return
VCC Low side and logic fixed supply
LO Low side gate drive output
COM Low side return

Lead Assignments

1 VCC VB 8 1 VCC VB 8
2 HIN HO 7 2 HIN HO 7

3 LIN VS 6 3 LIN VS 6

4 COM LO 5 4 COM LO 5

8 Lead PDIP 8 Lead SOIC

IR2106 IR2106S

1 VCC 14 1 VCC 14

2 HIN VB 13 2 HIN VB 13

3 LIN HO 12 3 LIN HO 12

4 VS 11 4 VS 11

5 VSS 10 5 VSS 10

6 COM 9 6 COM 9

7 LO 8 7 LO 8

14 Lead PDIP 14 Lead SOIC

IR21064 IR21064S

6 www.irf.com
IR2106(4)(S & (PbF))

HIN
LIN

HO
LO

Figure 1. Input/Output Timing Diagram

HIN 50% 50%


LIN
ton tr toff tf

90% 90%

HO
LO 10% 10%

Figure 2. Switching Time Waveform Definitions

HIN 50% 50%


LIN

LO HO

10%

MT MT

90%

LO HO

Figure 3. Delay Matching Waveform Definitions

www.irf.com 7
IR2106(4)(S) & (PBF)

500 500
Turn-on Propagation Delay (ns)

Turn-on Propagation Delay (ns)


400 400
M ax.

300 300
Typ.
M ax

200 200

Typ.
100 100

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
Temperature ( oC) V BIAS Supply Voltage (V)

Figure 4A. Turn-on Propagation Delay Figure 4B. Turn-on Propagation Delay
vs. Temperature vs. Supply Voltage

500 500
Turn-off Propagation Delay (ns)

Turn-off Propagation Delay (ns)

400 400

M ax.
300 300

M ax. Typ.
200 200
Typ.

100 100

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20

o
Temperature ( C) V BIAS Supply Voltage (V)

Figure 5A. Turn-off Propagation Delay Figure 5B. Turn-off Propagation Delay
vs. Temperature vs. Supply Voltage

8 www.irf.com
IR2106(4)(S & (PbF))

500 500

400
Turn-on Rise Time (ns)

Turn-on Rise Time (ns)


400

300 300
M ax.

200 200 Typ.


M ax.

Typ.
100 100

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20

Temperature ( oC) V BIAS Supply Voltage (V)

Figure 6A. Turn-on Rise Time Figure 6B. Turn-on Rise Time
vs. Temperature vs. Supply Voltage

200 200
Turn-off Fall Time (ns)

Turn-off Fall Time (ns)

150 150

M ax.
100 100

M ax.
Typ.
50 50
Typ.

0
0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
Temperature ( oC) V BIAS Supply Voltage (V)

Figure 7A. Turn-off Fall Time Figure 7B. Turn-off Fall Time
vs. Temperature vs. Supply Voltage

www.irf.com 9
IR2106(4)(S) & (PBF)

8 8

7 7

6 6
Input Voltage (V)

Input Voltage (V)


5 5

4 4
M ax. M ax.
3 3

2 2

1 1

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20

Temperature (oC) V CC Supply Voltage (V)

Figure 8A. Logic “1” Input Voltage Figure 8B. Logic “1” Input Voltage
vs. Temperature vs. Supply Voltage

4.0
4.0

3.2
3.2
Input Voltage (V)

Input Voltage (V)

2.4
2.4

1.6
1.6

M in.
0.8 M in.
0.8

0.0 0.0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20

Temperature ( oC) V CC Supply Voltage (V)


Figure 9A. Logic “0” Input Voltage Figure 9B. Logic “0” Input Voltage
vs. Temperature vs. Supply Voltage

10 www.irf.com
IR2106(4)(S & (PbF))

4 4
High Level Output Voltage (V)

High Level Output Voltage (V)


3 3

M ax.
2 2

M ax. Typ.
1 1
Typ.

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20

Temperature ( oC) V BIAS Supply Voltage (V)

Figure 10A. High Level Output Voltage Figure 10B. High Level Output Voltage
vs. Temperature vs. Supply Voltage

1.5 1.5
Low Level Output Voltage (V)

Low Level Output Voltage (V)

1.2 1.2

0.9 0.9
M ax.

0.6 0.6
M ax.
Typ.
0.3 0.3
Typ.

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20

Temperature ( oC) V BIAS Supply Voltage (V)


Fi 11A L L lO t t
Figure 11A. Low Level Output Voltage Figure 11B. Low Level Output Voltage
vs. Temperature vs. Supply Voltage

www.irf.com 11
IR2106(4)(S) & (PBF)

500 500
Offset Supply Leakage Current ( A)

Offset Supply Leakage Current ( A)


400 400

300 300

200 200

100 100
M ax.
M ax.

0 0
-50 -25 0 25 50 75 100 125 0 100 200 300 400 500 600
o
Temperature ( C) V B Boost Voltage (V)

Figure 12A. Offset Supply Leakage Current Figure 12B. Offset Supply Leakage Current
vs. Temperature vs. Supply Voltage

400 400
V BS Supply Current ( A)
V BS Supply Current ( A)

300 300

200 200

M ax. M ax.
100 100
Typ.
Typ.

M in. M in.
0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20

Temperature (oC) V BS Supply Voltage (V)


Figure 13A. VBS Supply Current Figure 13B. VBS Supply Current
vs. Temperature vs. Supply Voltage

12 www.irf.com
IR2106(4)(S & (PbF))

400 400
V c c S u p p ly C u rre n t ( A )

V CC Supply Current ( A)
300 300

M ax.

200 M ax. 200


Typ.

Typ.
100 100 M in.
M in.

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
T e m p e ra tu re (oC ) V CC Supply Voltage (V)
Figure 14A. Quiescent VCC Supply Current Figure 14B. Quiescent VCC Supply Current
vs. Temperature vs. VCC Supply Voltage

60 60
Logic "1" Input Current ( A)

Logic "1" Input Current ( A)

50 50

40 40

30 30

M ax.
20 20

M ax.
10 10
Typ.
Typ.
0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
Temperature (oC) V CC Supply Voltage (V)

Figure 15A. Logic “1” Input Current Figure 15B. Logic “1” Bias Current
vs. Temperature vs. Supply Voltage

www.irf.com 13
IR2106(4)(S) & (PBF)

5
5

Logic "0" Input Current ( A)


Logic "0" Input Current ( A)

4
4

3
3

M ax.
M ax.
2
2

1
1

0
0
10 12 14 16 18 20
-50 -25 0 25 50 75 100 125
V CC Supply Voltage (V)
Temperature (oC)
Fi 16B L i "0" I C
Figure 16A. Logic “0” Input Current Figure 16B. Logic “0” Input Currentt
vs. Temperature vs. Supply Voltage

12
11
V CC UVLO Threshold (+) (V)

V CC UVLO Threshold (-) (V)

11
10

M ax.
10 M ax. 9

Typ.
Typ.
9 8
M in.
M in.
8 7

7 6
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125

Temperature ( oC) Temperature ( oC)

Figure 17. VCC Undervoltage Threshold (+) Figure 18. VCC Undervoltage Threshold (-)
vs. Temperature vs. Temperature

14 www.irf.com
IR2106(4)(S & (PbF))

12 11
V BS UVLO Threshold (+) (V)

V BS UVLO Threshold (-) (V)


11 10

M ax. M ax.
10 9

Typ.
Typ.
9 8

M in.
M in.
8 7

7 6
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125

o
o
Temperature ( C) Temperature ( C)

Figure 19. VBS Undervoltage Threshold (+) Figure 20. VBS Undervoltage Threshold (-)
vs. Temperature vs. Temperature

500
500
Output Source Current ( A)
Output Source Current ( A)

400 400

300 300
Typ.

200 200
M in.
Typ.
100 100

M in.

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20

o
Temperature ( C) V BIAS Supply Voltage (V)

Figure 21A. Output Source Current Figure 21B. Output Source Current
vs. Temperature vs. Supply Voltage

www.irf.com 15
IR2106(4)(S) & (PBF)

600 600

500
Output Sink Current ( A)

500

Output Sink Current ( A)


Typ.
400 400

M in.
300 300

Typ.
200 200

100 M in.
100

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
o
Temperature ( C) V BIAS Supply Voltage (V)

Figure 22A. Output Sink Current Figure 22B. Output Sink Currentt
vs. Temperature vs. Supply Voltage

0 140
V S Offset Supply Voltage (V)

-2 120
Temprature (oC)

Typ. 100
-4
80 140V
70V
-6
60 0V

-8 40

20
-10
10 12 14 16 18 20 1 10 100 1000
V BS Floating Supply Voltage (V) Frequency (KHz)

Figure 23. Maximum VS Negative Offset Figure 24. IR2106 vs. Frequency (IRFBC20),
vs. Supply Voltage Ω, VCC=15V
Rgate=33Ω

16 www.irf.com
IR2106(4)(S & (PbF))

140 140

120 120
Temperature (oC)

Temperature (oC)
100 100
140V
140V
80 80 70V
70V
0V
60 0V 60

40 40

20 20
1 10 100 1000 1 10 100 1000

Frequency (KHz) Frequency (KHz)

Figure 25. IR2106 vs. Frequency (IRFBC30), Figure 26. IR2106 vs. Frequency (IRFBC40),
Rgate=22Ω , V CC=15V Rgate=15Ω , V CC=15V

140V 70V
140 140
0V
120 120
Temperature (oC)
Temperature (oC)

100 100

80 80

60 60 140V

70V
40 40
0V

20 20
1 10 100 1000 1 10 100 1000
Frequency (KHz) Frequency (KHz)

Figure 27. IR2106 vs. Frequency (IRFPE50), Figure 28. IR21064 vs. Frequency (IRFBC20),
Rgate=10Ω , V CC=15V Rgate=33Ω , V CC=15V

www.irf.com 17
IR2106(4)(S) & (PBF)

140 140

120 120

Temperature (oC)
Temperature (oC)

100 100
140V

80 80 70V
140V
60 60 0V
70V

40 0V 40

20 20
1 10 100 1000 1 10 100 1000

Frequency (KHz) Frequency (KHz)

Figure 29. IR21064 vs. Frequency (IRFBC30), Figure 30. IR21064 vs. Frequency (IRFBC40),
Rgate=22Ω , V CC=15V Rgate=15Ω , V CC=15V

140V
140 140
70V
120 120
Temperature (o C)
Temperature (oC)

100 0V
100

80 80 140V

70V
60 60 0V

40 40

20 20
1 10 100 1000 1 10 100 1000
Frequency (KHz) Frequency (KHz)

Figure 31. IR21064 vs. Frequency (IRFPE50), Figure 32. IR2106S vs. Frequency (IRFBC20),
Rgate=10Ω , V CC=15V Rgate=33Ω , V CC=15V

18 www.irf.com
IR2106(4)(S & (PbF))

140V 70V
140 140
120 120
140V

Temperature (oC)
Temperature (oC)

0V
100 70V 100
0V
80 80

60 60

40 40

20 20
1 10 100 1000 1 10 100 1000

Frequency (KHz) Frequency (KHz)

Figure 33. IR2106S vs. Frequency (IRFBC30), Figure 34. IR2106S vs. Frequency (IRFBC40),
Rgate=22Ω , V CC=15V Rgate=15Ω , V CC=15V

140V 70V 0V
140 140

120 120
Temperature (oC)
Tempreture (oC)

100 100

80 80
60 60 140V
70V
40 40
0V

20
20
1 10 100 1000
1 10 100 1000
Frequency (KHz)
Frequency (KHz)

Figure 35. IR2106S vs. Frequency Figure 36. IR21064S vs. Frequency (IRFBC20),
(IRFPE50), Rgate=10Ω , V CC=15V Rgate=33Ω , V CC=15V

www.irf.com 19
IR2106(4)(S) & (PBF)

140 140

120 120
Temperature (oC)

Temperature (oC)
100 100 140V

80 140V 80 70V

70V 0V
60 60
0V

40 40

20 20
1 10 100 1000 1 10 100 1000

Frequency (KHz) Frequency (KHz)

Figure 37. IR21064S vs. Frequency (IRFBC30), Figure 38. IR21064S vs. Frequency (IRFBC40),
Rgate=22Ω , V CC=15V Rgate=15Ω , V CC=15V

140V 70V
140
0V

120
Temperature (oC)

100

80

60

40

20
1 10 100 1000
Frequency (KHz)

Figure 39. IR21064S vs. Frequency (IRFPE50),


Rgate=10Ω , V CC=15V

20 www.irf.com
IR2106(4)(S & (PbF))

Case Outlines

01-6014
8 Lead PDIP 01-3003 01 (MS-001AB)

INCHES MILLIMETERS
D B DIM
MIN MAX MIN MAX
A 5 FOOTPRINT A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
8X 0.72 [.028]
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E E .1497 .1574 3.80 4.00
0.25 [.010] A
1 2 3 4 6.46 [.255] e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
L .016 .050 0.40 1.27
6X e 3X 1.27 [.050]
8X 1.78 [.070] y 0° 8° 0° 8°

e1 K x 45°
A
C y

0.10 [.004]
A1 8X L 8X c
8X b
7
0.25 [.010] C A B

NOTES: 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.


1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
2. CONTROLLING DIMENSION: MILLIMETER 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INC HES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 7 DIMENSION IS THE LENG TH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
01-6027
8 Lead SOIC 01-0021 11 (MS-012AA)

www.irf.com 21
IR2106(4)(S) & (PBF)

01-6010
14 Lead PDIP 01-3002 03 (MS-001AC)

01-6019
14 Lead SOIC (narrow body) 01-3063 00 (MS-012AB)

22 www.irf.com
IR2106(4)(S & (PbF))

LEADFREE PART MARKING INFORMATION

Part number IRxxxxxx


Date code YWW? IR logo

Pin 1 ?XXXX
Identifier
Lot Code
? MARKING CODE (Prod mode - 4 digit SPN code)
P Lead Free Released
Non-Lead Free
Released
Assembly site code
Per SCOP 200-002

ORDER INFORMATION

Basic Part (Non-Lead Free) Leadfree Part


8-Lead PDIP IR2106 order IR2106 8-Lead PDIP IR2106 order IR2106PbF
8-Lead SOIC IR2106S order IR2106S 8-Lead SOIC IR2106S order IR2106SPbF
14-Lead PDIP IR21064 order IR21064 14-Lead PDIP IR21064 order IR21064PbF
14-Lead SOIC IR21064S order IR21064S 14-Lead SOIC IR21064S order IR21064SPbF

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
This product has been qualified per industrial level
Data and specifications subject to change without notice. 4/12/2004

www.irf.com 23