PD - 9.

1525

IRF9Z34NS/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRF9Z34NS) D
VDSS = -55V
l Low-profile through-hole (IRF9Z34NL)
l 175°C Operating Temperature
RDS(on) = 0.10Ω
l Fast Switching
G
l P-Channel
l Fully Avalanche Rated ID = -19A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
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benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on- D 2 Pak T O -2 6 2
resistance in any existing surface mount package. The
D2 Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z34NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, V GS @ -10V… -19
ID @ TC = 100°C Continuous Drain Current, V GS @ -10V… -14 A
IDM Pulsed Drain Current … -68
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 68 W
Linear Derating Factor 0.45 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚… 180 mJ
IAR Avalanche Current -10 A
EAR Repetitive Avalanche Energy 6.8 mJ
dv/dt Peak Diode Recovery dv/dt ƒ… -5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 2.2
°C/W
RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40

8/25/97
 IRF9Z34NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA…
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.10 Ω VGS = -10V, I D = -10A „
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS , ID = -250µA
gfs Forward Transconductance 4.2 ––– ––– S V DS = -25V, I D = -10A…
––– ––– -25 VDS = -55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V
I GSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 35 I D = -10A
Qgs Gate-to-Source Charge ––– ––– 7.9 nC VDS = -44V
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Qgd Gate-to-Drain ("Miller") Charge ––– ––– 16 VGS = -10V, See Fig. 6 and 13 „…
td(on) Turn-On Delay Time ––– 13 ––– VDD = -28V
tr Rise Time ––– 55 ––– I D = -10A
ns
t d(off) Turn-Off Delay Time ––– 30 ––– R G = 13Ω
tf Fall Time ––– 41 ––– RD = 2.6Ω, See Fig. 10 „
Between lead,
LS Internal Source Inductance ––– 7.5 ––– nH
and center of die contact
Ciss Input Capacitance ––– 620 ––– VGS = 0V
Coss Output Capacitance ––– 280 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 140 ––– ƒ = 1.0MHz, See Fig. 5…

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– -19
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– -68
(Body Diode)  p-n junction diode. S

V SD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -10A, VGS = 0V „

t rr Reverse Recovery Time ––– 54 82 ns TJ = 25°C, IF = -10A
Q rr Reverse Recovery Charge ––– 110 160 nC di/dt = -100A/µs „…
t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 3.6mH … Uses IRF9Z34N data and test conditions
RG = 25Ω, I AS = -10A. (See Figure 12)
ƒ I SD ≤ -10A, di/dt ≤ -290A/µs, VDD ≤ V(BR)DSS ,
TJ ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
 IRF9Z34NS/L

100 100
VGS VGS
TOP - 15V TOP - 15V
- 10V - 10V
- 8.0V - 8.0V
- 7.0V - 7.0V
-ID , D ra in -to -S o u rc e C u rre n t (A )

-ID , D ra in -to -S o u rc e C u rre n t (A )

- 6.0V - 6.0V
- 5.5V - 5.5V
- 5.0V - 5.0V
BOTT OM - 4. 5V BOTT OM - 4. 5V

10 10

www.DataSheet4U.com -4 .5V
-4 .5V
2 0µ s PU LS E W ID TH 20 µ s PU LSE W ID TH
TTcJ =
= 25°C
2 5°C A TTCJ = 175°C
1 75°C
1 1 A
0.1 1 10 100 0.1 1 10 100
-VD S , Drain-to-Source Voltage (V) -VD S , Drain-to-Source V oltage (V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.0
I D = -17 A
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
-I D , D rain -to- S our ce C urr ent ( A )

1.5
T J = 2 5 °C
T J = 1 7 5 °C
(N o rm a li ze d )

10 1.0

0.5

V DS = -2 5 V
2 0 µ s P U L S E W ID T H VG S = -10 V
1 0.0
A A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

-VG S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
 IRF9Z34NS/L

1200 20
V GS = 0V , f = 1MH z I D = -10 A
C is s = C gs + C g d , Cds SH OR TED

-V G S , G a te -to -S o u rc e V o lta g e (V )
C rs s = Cgd
1000 V DS = -44 V
C os s = C ds + C gd 16
V DS = -28 V
C , C a p a c ita n c e (p F )

800 C i ss
12

600 C os s

8
400
C rs s
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4
200

FO R TEST C IR C U IT
SEE F IGU R E 1 3
0 A 0 A
1 10 100 0 10 20 30 40
-VD S , Drain-to-Source V oltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPE R ATIO N IN TH IS A RE A LIMITE D
-IS D , R e ve rse D ra in C u rre n t (A )

BY R D S(o n)
-I D , D ra in C u rre n t (A )

10 100
T J = 1 75 °C
1 0µs

T J = 25 °C

100µ s
1 10

1m s

T CC ==225°C
T 5°C
T J = 1 75°C 10m s
VG S = 0 V Sin gle Pu lse
0.1 A 1 A
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100
-VS D , S ource-to-Drain V oltage (V ) -VD S , Drain-to-Source V oltage (V )

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRF9Z34NS/L

RD
20 VDS

VGS
D.U.T.
RG -
15 + VDD
I D , Drain Current (A)

-10V
Pulse Width ≤ 1 µs
10 Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

5
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td(on) tr t d(off) tf
VGS
10%
0
25 50 75 100 125 150 175
T C , Case Temperature ( ° C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms

10
Thermal Response (Z thJC )

D = 0.50
1

0.20

0.10

0.05 PDM
0.1 0.02 SINGLE PULSE
0.01 (THERMAL RESPONSE) t1
t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

 IRF9Z34NS/L

500
L ID

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
VDS
TOP -4 .2A
-7.2 A
RG D .U .T 400 BO TTOM -10 A
VDD
IA S A
-2 0V D R IV E R
tp 0.0 1Ω
300

200
15V

www.DataSheet4U.com 100
Fig 12a. Unclamped Inductive Test Circuit

0 A
I AS 25 50 75 100 125 150 175
Starting TJ , Junction T emperature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

tp
V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ
QG 12V .2µF
.3µF
-10V -
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRF9Z34NS/L
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* • Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-

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
RG • dv/dt controlled by RG +
• I SD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[ VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ ISD]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS

 IRF9Z34NS/L
D2Pak Package Outline

10.54 ( .415) -B - 10.16 (.400)

10.29 ( .405) 4.69 (.185) RE F .
1.40 (.055) 4.20 (.165)
-A- 1.32 (.052)
MAX.
1.22 (.048)
2
6.47 (.255)
6.18 (.243)

1.78 (.070) 15.49 (.610) 2.79 (.110)

1.27 (.050) 1 3 14.73 (.580) 2.29 (.090)

5.28 (.208) 2.61 (.103)

www.DataSheet4U.com 4.78 (.188) 2.32 (.091)

8.89 (.350)
1.40 (.055) 1.39 (.055) RE F.
3X
1.14 (.045) 0.93 (.037) 0.55 (.022) 1.14 (.045)
3X 0.46 (.018)
0.69 (.027)
5.08 ( .200)
0.25 (.010) M B A M MINIMUM RECO MM ENDED F OO TP RINT

11.43 (.450)

NO TE S: LE AD ASS IG NM ENT S 8.89 (.350)

1 DIM ENS IO NS AF T ER S OLDE R DIP . 1 - G AT E
2 - DRA IN 17.78 (.700)
2 DIM ENS IO NING & TO LERA NCING PE R ANS I Y 14.5M, 1982.
3 - S OU RC E
3 CO NT RO LLING DIME NSIO N : INCH.
4 HE AT SINK & LEAD DIMEN SION S DO NO T INCLUDE BURRS.
3.81 (.150)

2.54 (.100)
2.08 (.082) 2X
2X

Part Marking Information

D2Pak

A
IN TER NATION AL PART NU MBER
REC TIFIER
F53 0S
L OGO
9246
9B 1M DATE CODE
(YYW W )
AS SEMBLY
YY = YEAR
LOT CODE
W W = W EE K
 IRF9Z34NS/L
Package Outline
TO-262 Outline

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Part Marking Information

TO-262
 IRF9Z34NS/L
Tape & Reel Information
D2Pak

TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .6 0 (.0 6 3)
4 .1 0 (.1 6 1)
1 .5 0 (.0 5 9) 0 .3 68 (.0 14 5 )
3 .9 0 (.1 5 3)
0 .3 42 (.0 13 5 )

F E E D D IR E C TIO N 1 .8 5 (.0 7 3 ) 11 .6 0 (. 45 7 )
1 .6 5 (.0 6 5 ) 11 .4 0 (. 44 9 ) 2 4 .30 (.9 5 7)
15 .4 2 (.60 9 )
15 .2 2 (.60 1 ) 2 3 .90 (.9 4 1)

TR L
www.DataSheet4U.com 1. 75 (.0 69 )
1 0. 90 (.4 29 ) 1. 25 (.0 49 )
1 0. 70 (.4 21 ) 4 .7 2 (.1 3 6)
1 6. 10 (.6 34 ) 4 .5 2 (.1 7 8)
1 5. 90 (.6 26 )

FE E D D IR E C TIO N

1 3.5 0 (. 532 ) 2 7.4 0 (1 .079 )

1 2.8 0 (. 504 ) 2 3.9 0 (.9 41)

33 0.0 0 6 0.0 0 (2 .36 2)

(14. 17 3) M IN .
M AX .

3 0.4 0 (1 .19 7)
N O T ES : MA X .
1. C O M F O R M S T O EIA -418 . 26 .40 (1. 03 9) 4
2. C O N T R O LLIN G D IM EN SIO N : M ILLIM E T ER . 24 .40 (.9 61 )
3. D IM E N S IO N M EA S U R E D @ H U B .
3
4. IN C LU D E S F L AN G E D IS T O R T IO N @ O U T E R ED G E.

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http://www.irf.com/ Data and specifications subject to change without notice. 8/97