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Review Article
A Review on Conduction Mechanisms in Dielectric Films
Fu-Chien Chiu
Department of Electronic Engineering, Ming Chuan University, Taoyuan 333, Taiwan
Received 29 August 2013; Revised 5 December 2013; Accepted 11 December 2013; Published 18 February 2014
Copyright © 2014 Fu-Chien Chiu. This is an open access article distributed under the Creative Commons Attribution License,
which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
The conduction mechanisms in dielectric films are crucial to the successful applications of dielectric materials. There are two
types of conduction mechanisms in dielectric films, that is, electrode-limited conduction mechanism and bulk-limited conduction
mechanism. The electrode-limited conduction mechanism depends on the electrical properties at the electrode-dielectric interface.
Based on this type of conduction mechanism, the physical properties of the barrier height at the electrode-dielectric interface
and the effective mass of the conduction carriers in dielectric films can be extracted. The bulk-limited conduction mechanism
depends on the electrical properties of the dielectric itself. According to the analyses of bulk-limited conduction mechanisms,
several important physical parameters in the dielectric films can be obtained, including the trap level, the trap spacing, the trap
density, the carrier drift mobility, the dielectric relaxation time, and the density of states in the conduction band. In this paper, the
analytical methods of conduction mechanisms in dielectric films are discussed in detail.
Conduction mechanism
Poole-Frenkele mission
Schottky emission
Hopping conduction
Fowler-Nordheim tunneling
Ohmic conduction
Direct tunneling Space-charge-limited conduction
Thermionic-field emission Ionic conduction
Grain-boundary-limited conduction
are made of different metals. Different metals generally lead tunneling, (3) direct tunneling, and (4) thermionic-field
to different work functions, and therefore result in different emission. The bulk-limited conduction mechanisms include
metal-dielectric interface barriers. The main parameters in (1) Poole-Frenkel emission, (2) hopping conduction, (3)
this type of measurement are the barrier height of the metal- ohmic conduction, (4) space-charge-limited conduction, (5)
dielectric interface and the effective mass of the conduction ionic conduction, and (6) grain-boundary-limited conduc-
carriers. The second type used to characterize a dielectric tion. Figure 1 shows the classification of conduction mech-
film is the metal-insulator-semiconductor (MIS) capacitor. anisms in dielectric films.
Since MIS capacitor is the most useful device in the study
of semiconductor surfaces, it is of interest to characterize
the electrical properties of the device. However, the structure
2. Electrode-Limited Conduction Mechanisms
of the MIS capacitor is inherently asymmetric and one The electrode-limited conduction mechanisms depend on
should be careful about the voltage drop across each layer. the electrical properties at the electrode-dielectric contact.
If the MIS capacitor can be biased in such a way that the The most important parameter in this type of conduc-
semiconductor surface is in accumulation, the voltage drop tion mechanism is the barrier height at the electrode-
across the semiconductor is minimal and most of the voltage dielectric interface. The electrode-limited conduction mech-
will be applied across the dielectric film. If the semiconductor anisms include (1) Schottky or thermionic emission, (2)
surface is in depletion or inversion, some voltage drop across Fowler-Nordheim tunneling, (3) direct tunneling, and (4)
the semiconductor will take place and then the voltage drop thermionic-field emission. The current due to thermionic
needs to be considered in calculation of the electric field emission is highly dependent on the temperature, whereas the
across the dielectric film. tunneling current is nearly temperature independent. Aside
Among the conduction mechanisms being investigated, from the barrier height at the electrode-dielectric interface,
some depend on the electrical properties at the electrode- the effective mass of the conduction carriers in dielectric
dielectric contact. These conduction mechanisms are called films is also a key factor in the electrode-limited conduction
electrode-limited conduction mechanisms or injection-lim- mechanisms.
ited conduction mechanisms. There are other conduction
mechanisms which depend only on the properties of the 2.1. Schottky or Thermionic Emission. Schottky emission is
dielectric itself. These conduction mechanisms are called a conduction mechanism that if the electrons can obtain
bulk-limited conduction mechanisms or transport-limited enough energy provided by thermal activation, the electrons
conduction mechanisms [1–10]. The methods to distinguish in the metal will overcome the energy barrier at the metal-
these conduction mechanisms are essential because there are dielectric interface to go to the dielectric. Figure 2 shows the
a number of conduction mechanisms that may all contribute MIS energy band diagram when the metal electrode is under
to the conduction current through the dielectric film at the negative bias with respect to the dielectric and the semi-
same time. Since several conduction mechanisms depend conductor substrate. The energy barrier height at the metal-
on the temperature in different ways, measuring the tem- dielectric interface may be lowered by the image force. The
perature dependent conduction currents may afford us a barrier-lowering effect due to the image force is called Schot-
helpful way to know the constitution of the conduction cur- tky effect. Such a conduction mechanism due to electron
rents. The electrode-limited conduction mechanisms include emission from the metal to the dielectric is called thermionic
(1) Schottky or thermionic emission (2) Fowler-Nordheim emission or Schottky emission. Thermionic emission is one of
Advances in Materials Science and Engineering 3
1 × 10−3
1 × 10−5
1 × 10−7
Metal Insulator Semiconductor
1 × 10−9
1 × 10−11
EC 0 0.5 1 1.5 2 2.5 3 3.5 4
Electric field (MV/cm)
EF
EV 300 K 450 K
350 K 500 K
400 K
1 × 10−5
Al
1 × 10−9 ZrO2
Si
Si
−5 425 K
1 × 10
1 × 10−10 450 K
J/T2 (A/cm2 K2 )
475 K
1 × 10−11 1 × 10−6
1 × 10−12
1 × 10−7
−13 1 1.2 1.4 1.6
1 × 10
E1/2 (M V/cm)1/2
1 × 10−14
0 0.5 1 1.5 2
E1/2 (M V/cm)1/2
Schottky plots
300 K: 𝜀r = 20.2 450 K: 𝜀r = 6.30
400 K: 𝜀r = 17.9 475 K: 𝜀r = 6.40
425 K: 𝜀r = 6.23
Figure 4: Characteristics of standard Schottky emission at various temperatures. Inset graphs present standard Schottky emission constrained
by 𝑛 = 𝜀𝑟1/2 at high temperatures; the band diagram is also shown.
(1) should be modified into (2) when the electronic mean free will penetrate through the potential barrier when the barrier
path (𝑙) is less than the dielectric thickness (𝑡𝑑 ): is thin enough (<100 Å). Hence, the probability of electrons
existing at the other side of the potential barrier is not zero
𝑚∗
3/2 −𝑞 (𝜙𝑏 − √𝑞𝐸/4𝜋𝜀𝑟 𝜀0 ) because of the tunneling effect. Figure 5 shows the schematic
𝐽 = 𝛼𝑇3/2 𝐸𝜇( ) exp [ ]
𝑚0 𝐾𝑇 (2) energy band diagram of Fowler-Nordheim (F-N) tunneling.
F-N tunneling occurs when the applied electric field is large
(𝑙 < 𝑡𝑑 ) , enough so that the electron wave function may penetrate
through the triangular potential barrier into the conduction
where 𝛼 = 3×10−4 A s/cm3 K3/2 and 𝜇 is the electronic mobil- band of the dielectric. The expression of the F-N tunneling
ity in the insulator; the other notations are the same as defined current is
before. Notably, no clear distinction can be made between
the bulk- and electrode-limited conduction mechanisms, as 1/2
indicated by (2), because each is involved in the conduction 𝑞 3 𝐸2 −8𝜋(2𝑞𝑚𝑇∗ )
𝐽= exp [ 𝜙𝐵3/2 ] , (3)
process [15]. By generating modified Schottky emission plots 8𝜋ℎ𝑞𝜙𝐵 3ℎ𝐸
for ZrO2 films of various thicknesses, the electronic mean
free path in ZrO2 films can be determined to be between 16.2
and 17.4 nm at high temperature (>425 K) [13]. In addition, where 𝑚𝑇∗ is the tunneling effective mass in dielectric; the
the electronic mobility (𝜇) in ZrO2 films can be determined other notations are the same as defined before. To extract the
from the intercept of the plot of modified Schottky emission. tunneling current, one can measure the current-voltage (𝐼-𝑉)
The obtained electronic mobility in ZrO2 is 12-13 cm2 /V-s in characteristics of the devices at very low temperature. At such
a medium field at high temperatures [13]. a low temperature, the thermionic emission is suppressed and
the tunneling current is dominant.
2.2. Fowler-Nordheim Tunneling. According to the classical For F-N tunneling, a plot of ln(𝐽/𝐸2 ) versus 1/𝐸 should be
physics, when the energy of the incident electrons is less than linear. Figure 6 shows the 𝐼-𝑉 data measured at 77 K for an
the potential barrier, the electrons will be reflected. However, HfO2 MIS capacitor biased in the accumulation mode [16].
quantum mechanism predicts that the electron wave function The inset graph indicates that the fitting of F-N tunneling
Advances in Materials Science and Engineering 5
Fowler-Nordheim tunneling these results, the tunneling effective mass can be assumed to
be equal to the electron effective mass for dielectric films with
wide enough thickness.
q𝜙B
2.3. Direct Tunneling. There are two main gate current
conduction mechanisms in SiO2 films. If the voltage across
the SiO2 is large enough, the electrons see a triangular barrier
and the gate current is due to F-N tunneling. On the other
Metal Insulator Semiconductor hand, if the voltage across the SiO2 is small, the electrons see
the full oxide thickness and the gate current is due to directing
tunneling. The driving oxide voltage between the two mech-
EC anisms is approximately 3.1 V for the SiO2 -Si interface. For
SiO2 thicknesses of 4-5 nm and above, F-N tunneling domi-
EF nates and for SiO2 thickness less than about 3.5 nm, directing
EV tunneling becomes dominant. The schematic energy band
diagram of direct tunneling is shown in Figure 8. Based on the
result of Lee and Hu on a polysilicon-SiO2 -silicon structure,
the expression of the direct tunneling current density is [12]
Figure 5: Schematic energy band diagram of Fowler-Nordheim
tunneling in metal-insulator-semiconductor structure. 𝑞2
𝐽= 𝐶 (𝑉𝐺, 𝑉, 𝑡, 𝜙𝐵 )
8𝜋ℎ𝜀𝜙𝐵
3/2 3/2
8𝜋√2𝑚∗ (𝑞𝜙𝐵 ) |𝑉|
theory in high electric fields is very good. The slope of F- × exp {− ⋅ [1 − (1 − ) ]} ,
3ℎ𝑞 |𝐸| 𝜙𝐵
N plot can be expressed in (4) [17] and is also a function of
electron effective mass and barrier height: (5)
1 × 100
−30
−32
1 × 10−1 FN plot
−34
ln(J/E 2 )
−36
1 × 10−2
−38 m∗ = 0.4 m0
Current density (A/cm2 )
−40 ΦB = 0.94 eV
−3
1 × 10 −42
0.24 0.28 0.32 0.36 0.4
1/E (cm/MV)
1 × 10−4
T = 77 K
Al/HfO2 /p-Si
1 × 10−5 RTA @ 700∘ C
EOT = 6 nm
1 × 10−6
0 1 × 106 2 × 106 3 × 106 4 × 106
Electric field (V/cm)
Figure 6: Characteristics of 𝐽-𝐸 plots for HfO2 MIS capacitor at 77 K. The inset graph presents the Fowler-Nordheim tunneling.
1 Direct tunneling
∗
m
0.9
m ∗ ΦB
ΦB
0.85
FN Al Semiconductor
Metal Insulator
Al
0.8 p-Si
p-Si HfO2 IL EC
HfO2 IL
0.75
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 EF
Effective mass (m∗ ) EV
103
JVD-Si3 N4 Al2 O3
20
La2 O3
15
JG,limit = 1 A/cm2
10 SiO2
Gate current density JG (A/cm2 )
100
5
RPN-SiON
0
0 5 10 15 20
Figure of merit f = (meff ΦB )1/2 · 𝜅
10−3
JVD
RP
Inversion bias
HfO 2
N-S
-Si 3
SiO 2
|VG | = 1.0 V
La 2 O 3
Al 2 O 3
iON
N4
10−6
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Equivalent SiO2 thickness tox,eq (nm)
Figure 9: Scaling limit for several gate dielectrics when 𝑉𝑑𝑑 = 1.0 V and 𝐽𝐺,limit = 1 A/cm2 [12].
gate leakage requirements for future CMOS technology [22]. 3. Bulk-Limited Conduction Mechanisms
The tunneling leakage current for a given EOT (equivalent
oxide thickness, 𝑡ox,eq ) is not only dependent on the 𝜅 value of The bulk-limited conduction mechanisms depend on the
a gate dielectric but also tunneling barrier height (𝑞𝜙𝐵 = Φ𝐵 ) electrical properties of the dielectric itself. The most impor-
and tunneling effective mass (𝑚eff ). They introduced a figure tant parameter in this type of conduction mechanism is the
of merit to compare the relative advantages of gate dielectric trap energy level in the dielectric films. The bulk-limited
candidates. The figure of merit is given by 𝑓 = (𝑚eff Φ𝐵 )1/2 ⋅ 𝜅. conduction mechanisms include (1) Poole-Frenkel emission,
Figure 9 shows the scaling limit for several gate dielectrics (2) hopping conduction, (3) ohmic conduction, (4) space-
when 𝑉𝐺 or 𝑉𝑑𝑑 is specified to be 1.0 V and the maximum charge-limited conduction, (5) ionic conduction, and (6)
tolerable gate current density 𝐽𝐺,limit is 1 A/cm2 . A dielectric grain-boundary-limited conduction. Based on the bulk-
with a larger figure of merit possesses a lower scaling limit limited conduction mechanisms, some important electrical
EOT, as shown in the inset of Figure 9. The EOT scaling limits properties in the dielectric films can be extracted, including
of La2 O3 and HfO2 are about 4 Å and 9 Å, respectively. the trap energy level, the trap spacing, the trap density, the
electronic drift mobility, and the dielectric relaxation time,
the density of states in the conduction band.
2.4. Thermionic-Field Emission. Thermionic-field emission
takes place intermediately between field emission and Schot- 3.1. Poole-Frenkel Emission. Poole-Frenkel (P-F) emission
tky emission. In this condition, the tunneling electrons involves a mechanism which is very similar to Schottky emis-
should have the energy between the Fermi level of metal and sion; namely, the thermal excitation of electrons may emit
the conduction band edge of dielectric. The schematic energy from traps into the conduction band of the dielectric. There-
band diagram of thermionic-field emission is shown in fore, P-F emission is sometimes called the internal Schottky
Figure 10(a). The difference between thermionic emission, emission. Considering an electron in a trapping center, the
thermionic-field emission, and field emission is shown in Fig- Coulomb potential energy of the electron can be reduced
ure 10(b). The current density due to thermionic-field emis- by an applied electric field across the dielectric film. The
sion can be roughly expressed as [8] reduction in potential energy may increase the probability
of an electron being thermally excited out of the trap into
𝑞2 √𝑚(𝑘𝑇)1/2 𝐸 𝑞𝜙𝐵 ℎ2 𝑞2 𝐸2 the conduction band of the dielectric. The schematic energy
𝐽= exp (− ) exp [ ] . (10)
8ℎ2 𝜋5/2 𝑘𝑇 24𝑚(𝑘𝑇)3 band diagram of P-F emission is shown in Figure 11. For
8 Advances in Materials Science and Engineering
EC
EC
EF
EF
EV EV
(a) (b)
Figure 10: (a) Schematic energy band diagram of thermionic-field emission in metal-insulator-semiconductor structure. (b) Comparison of
thermionic-field emission, thermionic emission, and field emission.
q𝜙T 10−3
10−4
J (A/cm2 )
10−5
10−6
10−7
Metal Insulator Semiconductor Simulations of
10−8 Poole-Frenkel emission
EC 10−9
0 0.5 1 1.5 2
E (MV/cm)
EF
EV 400 K, n = 1.6 325 K, n = 1.8
375 K, n = 1.7 300 K, n = 1.8
350 K, n = 1.8
Figure 11: Schematic energy band diagram of Poole-Frenkel emis- Figure 12: Characteristics of 𝐽-𝐸 plot and simulation of P-F
sion in metal-insulator-semiconductor structure. emission for the laminated Pr2 O3 /SiON MIS capacitors at high
fields.
1 × 10−6
1 × 10−7
1 × 10−8
Poole-Frenkel emissions
1 × 10−9 −8 Φt = 1.1 eV
J/E (A/cm·V)
Log(J/E)
−9
1 × 10−10
−10
1 × 10−11 −11
0.2 0.4 0.6 0.8 1
E1/2 (MV/cm)1/2
1 × 10−12 425 K, n = 2.50
450 K, n = 2.52
Al/ZrO2 (17.4 nm)/p-Si 475 K, n = 2.49
1 × 10−13
0 0.5 1 1.5 2
E1/2 (MV/cm)1/2
300 K: 𝜀r < 5 450 K: 𝜀r = 6.36
350 K: 𝜀r < 5 475 K: 𝜀r = 6.19
425 K: 𝜀r = 6.26
Figure 14: Characteristics of P-F emission at various temperatures. Inset graph presents Poole-Frenkel emission constrained by 𝑛 = 𝜀𝑟1/2 at
high temperatures.
2.0 × 10−7
J (A/cm2 )
EF 400 K 325 K
EV
375 K 300 K
350 K
holes in the valence band. In this conduction mechanism, band or from the impurity level. The carrier numbers will be
a linear relationship exists between the current density and very small but they are not zero. The current density of ohmic
the electric field. Figure 20 shows a schematic energy band conduction can be expressed as
diagram of the Ohmic conduction due to electrons. Although − (𝐸𝐶 − 𝐸𝐹 )
the energy band gap of dielectrics is by definition large, there 𝐽 = 𝜎𝐸 = 𝑛𝑞𝜇𝐸, 𝑛 = 𝑁𝐶 exp [ ], (13)
𝑘𝑇
will still be a small number of carriers that may be generated
due to the thermal excitation. For example, the electrons may where 𝜎 is electrical conductivity, 𝑛 is the number of electrons
be excited to the conduction band, either from the valence in the conduction band, 𝜇 is electron mobility, and 𝑁𝐶 is
Advances in Materials Science and Engineering 11
−15 1.6
Hopping conduction
−15.5 Ea = 50 ± 1 meV Pt/MgO/Pt
Φt
1.4
−16
Pt
−17
Pt
−17.5 1.0 MgO
−18
a = 1.5 nm
0.8
−18.5
2.4 2.6 2.8 3 3.2 3.4 Hopping distance (a) = 1 nm
1000/T 0.6
300 320 340 360 380 400 420 440
E= 0.40 MV/cm E = 0.31 MV/cm
E= 0.38 MV/cm E = 0.29 MV/cm Temperature (K)
E= 0.35 MV/cm E = 0.27 MV/cm
E= 0.33 MV/cm Figure 19: Temperature dependence of the trap energy levels in high
resistance state. Inset graph shows the band diagram of hopping
Figure 17: Arrhenius plot of the hopping conduction at low fields conduction in Pt/MgO/Pt memory cells.
for the laminated Pr2 O3 /SiON MIS capacitors.
Ohmic conduction
10−1
q𝜙B
Current density (A/cm2 )
10−3
10−5
10−7
Pt/MgO/Pt MIM diode EC
Hopping conduction
10−9 EF
0 300 600 900 1200 1500 EV
Electric field (kV/cm)
300 K, Φt = 0.70 eV 375 K, Φt = 1.00 eV
325 K, Φt = 0.80 eV 400 K, Φt = 1.15 eV
350 K, Φt = 0.90 eV 425 K, Φt = 1.29 eV
Figure 20: Energy band diagram of ohmic conduction in metal-
insulator-semiconductor structure.
Figure 18: Experimental data and simulation curves of hopping
conduction in high resistance state in Pt/MgO/Pt memory device.
Recently, the resistance switching behaviors in dielectric
films have been extensively studied [26–29]. The ohmic con-
the effective density of states of the conduction band; the duction can be often observed in low resistance state in the
other terms are as defined above. resistance switching memory devices. Figure 21 shows the 𝐽-𝐸
Because the energy band gap of a dielectric is very large, curves in a double-logarithmic plot in low resistance state in
we can assume that the Fermi level 𝐸𝐹 is close to the middle of Pt/ZnO/Pt memory devices [29]. The linear relation between
the energy band gap; that is, 𝐸𝐶 − 𝐸𝐹 ∼ 𝐸𝑔 /2. In this case, the current density and electric field is observed, which matches
ohmic conduction current is 𝐽 = 𝑞𝜇𝐸𝑁𝐶 exp(−𝐸𝑔 /2𝑘𝑇). The the ohmic conduction very well because the slopes are very
magnitude of this current is very small. This current mecha- close to 1. In Figure 21, the current density increases with
nism may be observed if there is no significant contribution increasing temperature. Hence, the linear relation between
from other conduction mechanisms of current transport in electrical conductivity (𝜎) and inverse temperature can be
dielectrics [10]. The ohmic conduction current due to mobile derived from Figure 21, as shown in Figure 22. Using the
electrons in the conduction band or similarly holes in the Arrhenius plot, the Fermi level (𝐸𝐹 ) of ZnO is determined
valence band is linearly dependent on the electric field. This to be about 0.4 eV below the conduction band edge in ZnO
current usually may be observed at very low voltage in the (𝐸𝐶), as shown in the inset of Figure 22. Consequently, the
current-voltage (𝐼-𝑉) characteristics of the dielectric films. product of 𝜇 and 𝑁𝐶 at each temperature can be extracted by
12 Advances in Materials Science and Engineering
100
𝜕2 𝑉 𝜌 (𝑥)
=− . (14)
10 −1
𝜕𝑥2 𝜀0
3.4. Space-Charge-Limited Conduction. The mechanism of where 𝑛𝑜 is the concentration of the free charge carriers in
space-charge-limited conduction (SCLC) is similar to the thermal equilibrium, 𝑉 is the applied voltage, 𝑑 is the thick-
transport conduction of electrons in a vacuum diode. ness of thin films, 𝜀 is the static dielectric constant, 𝜃 is the
Advances in Materials Science and Engineering 13
6
4 to the dielectric relaxation time (𝜏𝑑 ) [2]. The onset of the
departure from ohm’s law or the onset of the SCL conduction
4 takes place when the applied voltage reaches the value of
2 𝑉tr . Accordingly, 𝜏𝑐 ≅ 𝜏𝑑 can be extracted at the transition
Pt/ZnO/Pt point 𝑉tr . If the applied voltage 𝑉 is smaller than 𝑉tr , then the
EC − EF = 0.40 eV carrier transit time 𝜏𝑐 is larger than the dielectric relaxation
time 𝜏𝑑 . This implies that the injected carrier density 𝑛 is
2
300 320 340 360 380 400 420 440 small in comparison with 𝑛0 and that the injected carriers
will redistribute themselves with a tendency to maintain
Temperature (K)
electric charge neutrality internally in a time comparable to
Figure 23: Temperature dependence of the electron mobility and 𝜏𝑑 . Consequently, the injected carriers have no chance to
the effective density of states of the conduction band in low travel across the insulator. The redistribution of the charge
resistance state in Pt/ZnO/Pt memory devices. is known as dielectric relaxation. The ohmic behavior can
be observed only after these space charge carriers become
trapped. Figure 25 shows the schematic diagrams of carrier
distributions in dielectric film in SCLC mechanism under
Log J
Square region the conditions of (a) very weak injection (𝑉 < 𝑉tr , 𝑛 < 𝑛0 ,
(J ∼ V2 ) 𝜏𝑐 > 𝜏𝑑 ), (b) dielectric relaxation and carriers redistribution,
and (c) weak injection at 𝑉tr (𝑉 = 𝑉tr , 𝑛 = 𝑛0 , 𝜏𝑐 = 𝜏𝑑 ).
In the case of strong injection, the traps are filled up and
a space charge appears. When 𝑉 > 𝑉tr and 𝜏𝑐 ∼ 𝜏𝑑 or 𝜏𝑐 < 𝜏𝑑 ,
Linear region the injected excess carriers dominate the thermally generated
(J ∼ V) carrier since the injected carrier transit time is too short for
their charge to be relaxed by the thermally generated carriers.
Square region It is noted that for 𝑉 < 𝑉tr , 𝜏𝑐 increases with decreasing 𝑉 but
(J ∼ V2 ) 𝜏𝑑 remains almost constant, while for 𝑉 > 𝑉tr , 𝜏𝑐 decreases
with increasing 𝑉 and 𝜏𝑑 also decreases with increasing 𝑉
since the increase in 𝑉 causes an increase in free carrier
density in the dielectric. The increase of applied voltage may
increase the density of free carriers resulting from injection
to such a value that the Fermi level (𝐸𝐹𝑛 ) moves up above
Vtr VTFL Log V the electron trapping level (𝐸𝑡 ). The trap-filled limit (TFL)
Figure 24: A typical current density-voltage (𝐼-𝑉) characteristic of is the condition for the transition from the trapped 𝐽-𝑉
space-charge-limited conduction current. 𝑉tr is transition voltage. characteristics to the trap-free 𝐽-𝑉 characteristics. It can be
𝑉TFL is trap-filled limit voltage. imagined that after all traps are filled up, the subsequently
injected carriers will be free to move in the dielectric films,
so that at the subthreshold voltage (𝑉TFL ) to set on this
transition, the current will rapidly jump from its low trap-
ratio of the free carrier density to total carrier (free and limited value to a high trap-free SCL current. 𝑉TFL is defined
trapped) density, 𝑔𝑛 is the degeneracy of the energy state as the voltage required to fill the traps or, in other words, as
in the conduction band, 𝐸𝑡 is the trap energy level, 𝑁𝑡 is the voltage at which Fermi level (𝐸𝐹𝑛 ) passes through 𝐸𝑡 .
the trap density, 𝑛 is the concentration of the free carrier in In the case of very strong injection, all traps are filled and
the insulator, and the other terms are as defined above. It is the conduction becomes the space-charge-limited (Child’s
noticed that (20) is the Mott-Gurney relation which indicates law). Thus a space charge layer in the dielectric builds up and
the space-charge-limited current under the condition of the electric field cannot be regarded as constant any longer.
single type of carriers and no traps. If there are traps in the While the bias voltage reaches 𝑉TFL in the strong injection
dielectric, the SCL conduction can be described by (19) based mode, the traps get gradually saturated, which means that
on the assumption of monoenergetical trapping levels in the the Fermi-level gets closer to the bottom of the conduction
dielectric [5–7, 10]. band. This results in a strong increase of the number of free
At low applied voltages (𝑉<𝑉tr ), 𝐽-𝑉 characteristics electrons, thus explaining the increase of the current for 𝑉 =
followed the ohm’s law, which implies that the density of 𝑉TFL . For the voltage >𝑉TFL , the current is fully controlled
thermally generated free carriers (𝑛0 ) inside the films is larger by the space charge, which limits the further injection of
than the injected carriers [32]. This ohmic mode takes place free carriers in the dielectric. Square law dependence of
14 Advances in Materials Science and Engineering
V < Vtr
(a)
𝜏c > 𝜏d
n < n0
V < Vtr
(b)
n < n0
V = Vtr
(c)
𝜏c = 𝜏d
n = n0
Figure 25: Carriers distribution in dielectric film under carrier weak injection (𝑉 ≤ 𝑉tr ) in space-charge-limited conduction. (a) Very weak
injection (𝑉 < 𝑉tr , 𝑛 < 𝑛0 , 𝜏𝑐 > 𝜏𝑑 ), (b) dielectric relaxation and carriers redistribution, and (c) weak injection at 𝑉tr (𝑉 = 𝑉tr , 𝑛 = 𝑛0 , 𝜏𝑐 = 𝜏𝑑 ).
𝑉tr is the transition voltage at the onset of departure from ohm’s law; 𝑛 is the concentration of injected carriers; 𝑛0 is the concentration of
thermally generated free carriers in dielectric film; 𝜏𝑐 is the carrier transit time; 𝜏𝑑 is the dielectric relaxation time.
the current (𝐽 ∼ 𝑉2 , Child’s law) is the consequence 5.5 × 1018 cm−3 , the maximum of dielectric relaxation time
of the space charge controlled current. Figure 26 shows (𝜏𝑑,max ) is about 8.8 × 10−5 s, and the electron mobility (𝜇)
the schematic diagrams of carrier and trap distributions in is about 8.2 × 10−7 cm2 /V-s. In addition, some important
dielectric film in SCLC mechanism under the conditions of electrical properties in polycrystalline Dy2 O3 were also
(a) strong injection (𝑉 > 𝑉tr , 𝑛 < 𝑛0 < 𝑁𝑡 , 𝜏𝑐 < 𝜏𝑑 ), (b) obtained according to the SCLC mechanism [33]. At 350 K,
trap-filled-limited conduction (𝑉tr < 𝑉 < 𝑉TFL , 𝑛 < 𝑛0 < 𝑁𝑡 , the trap density (𝑁𝑡 ) is about 1.5 × 1019 cm−3 , the trap energy
𝐸𝐹𝑛 < 𝐸𝑡 ): trapped behavior, parts of traps are filled up, and level (𝐸𝑡 ) is about 0.20 eV, the trap capture cross-section
(c) space-charge-limited conduction (𝑉 > 𝑉TFL , 𝑛0 > 𝑁𝑡 , (𝜎𝑡 ) is about 3.2 × 10−21 cm2 , the effective density of states
𝐸𝐹𝑛 > 𝐸𝑡 ): trap-free behavior, all traps are filled up.
in the conduction band (𝑁𝐶) is about 4.5 × 1021 cm−3 ,
A report [32] showed that the dominant conduction
the maximum of dielectric relaxation time (𝜏𝑑,max ) is about
mechanism through the polycrystalline La2 O3 films is space-
charge-limited current, as shown in Figure 27. Three different 8.2 × 10−6 s, and the electron mobility (𝜇) is about 1.2 ×
regions, ohm’s law region, trap-filled-limited region, and 10−6 cm2 /V-s.
Child’s law region are observed in the current density-voltage
(𝐽-𝑉) characteristics at room temperature. Based on the 3.5. Ionic Conduction. Ionic conduction results from the
SCLC study in [32], some valuable electrical properties in movement of ions under an applied electric field. The move-
polycrystalline La2 O3 were obtained. For example, at room ment of the ions may come from the existence of lattice
temperature, the trap density (𝑁𝑡 ) is about 9.2 × 1017 cm−3 , defects in the dielectric films. Due to the influence of external
the trap energy level (𝐸𝑡 ) is about 0.21 eV, the trap capture electric field on defect energy level, the ions may jump
cross-section (𝜎𝑡 ) is about 1.2 × 10−21 cm2 , the effective over a potential barrier from one defect site to another.
density of states in the conduction band (𝑁𝐶) is about Figure 28(a) shows a schematic energy band diagram of ionic
Advances in Materials Science and Engineering 15
V > Vtr
(a)
𝜏c < 𝜏d
n < n0 < Nt
Within 𝜏d
Figure 26: Carriers distribution in dielectric film under carrier strong injection (𝑉 > 𝑉tr ) in space-charge-limited conduction. (a) Strong
injection (𝑉 > 𝑉tr , 𝑛 < 𝑛0 < 𝑁𝑡 , 𝜏𝑐 < 𝜏𝑑 ), (b) trap-filled-limited (𝑉tr < 𝑉 < 𝑉TFL , 𝑛 < 𝑛0 < 𝑁𝑡 , 𝐸𝐹𝑛 < 𝐸𝑡 ): parts of traps are filled up
(trapped behavior), and (c) space-charge-limited (𝑉 > 𝑉TFL , 𝑛0 > 𝑁𝑡 , 𝐸𝐹𝑛 > 𝐸𝑡 ): all traps are filled up (trap-free behavior). 𝑉tr and 𝑉TFL
are the transition voltage at the departure from ohm’s law and TFL curve, respectively; 𝑛 is the concentration of injected carriers; 𝑛0 is the
concentration of thermally generated free carriers; 𝑁𝑡 is the trap density; 𝜏𝑐 is the carrier transit time; 𝜏𝑑 is the dielectric relaxation time; 𝐸𝐹𝑛
is the Fermi level; 𝐸𝑡 is the trapping level.
conduction without the applied electric field. Figure 28(b) proportional to the relative dielectric constant of the dielec-
shows the condition with the applied electric field [10]. The tric material. The potential energy barrier can be written as
ionic conduction current can be expressed as
𝑞2 𝑛𝑏2
Φ𝐵 = 𝑞𝜙𝐵 = , (27)
𝑞𝜙 𝐸𝑞𝑑 2𝜀𝑁
𝐽 = 𝐽0 exp [− ( 𝐵 − )] , (26)
𝑘𝑇 2𝑘𝑇 where 𝑛𝑏 is the grain boundary trap density, 𝜀 is the rela-
tive dielectric constant of the dielectric material, and 𝑁 is
where 𝐽0 is the proportional constant, 𝑞𝜙𝐵 is the potential the dopant concentration. From (27), it can be seen that
barrier height, 𝐸 is the applied electric field, 𝑑 is the spacing of the dielectric constant can significantly affect the potential
two nearby jumping sites, and the other terms are as defined energy barrier at the grain boundaries.
above. Because the ion mass is large, the mechanism of ionic Figure 29(a) shows the charge distribution across an
conduction is usually not important for the applications of electron-trapped grain boundary and the existence of deple-
dielectric films in CMOS technology. tion regions next to the grain boundary. The potential energy
barrier at the grain boundary is shown in Figure 29(b) due to
3.6. Grain-Boundary-Limited Conduction. In a polycrys- the charge distribution close to the grain boundary. Figure 30
talline dielectric material, the resistivity of the grain bound- indicates an energy band diagram of the grain-boundary-
aries may be much higher than that of the grains. Therefore, limited conduction in a metal-insulator-metal MIM diode.
the conduction current could be limited by the electrical
properties of the grain boundaries. In this case, the con- 4. Summary
duction mechanism is called the grain-boundary-limited
conduction [10, 34]. The grain boundary will build a grain The conduction mechanisms in dielectric films are discussed
boundary potential energy barrier (Φ𝐵 ) which is inversely in detail in this review. There are two types of conduction
16 Advances in Materials Science and Engineering
10+2
10+1 SCL conduction mechanism
10+0
Figure 27: Logarithm of the current density plotted as a function of the logarithm of the applied voltage under negative bias at room
temperature.
E E
E=0 E→
q𝜙B + qEd/2
d
d
x x
(a) (b)
Figure 28: Energy band diagram of ionic conduction (a) without the applied electric field and (b) with the applied electric field. 𝐸 is the
applied electric field, 𝑑 is the spacing between ionic sites, and 𝑞𝜙𝐵 is the potential barrier height.
W W
Electron
q𝜙B
EC
EF
EV
−x 0− 0+ x −x 0− 0+ x
(a) (b)
Figure 29: (a) The charge distribution of an electron trapping grain boundary and (b) the resulting potential energy barrier at the grain
boundary. 𝑞𝜙𝐵 is the potential barrier and 𝑊 is the depletion width.
Advances in Materials Science and Engineering 17
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18 Advances in Materials Science and Engineering