UNISONIC TECHNOLOGIES CO.

, LTD
16N50 Power MOSFET

16A, 500V N-CHANNEL

POWER MOSFET
1
TO-220

 DESCRIPTION
The UTC 16N50 is a N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
1
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand TO-220F1
high energy pulse in the avalanche and commutation mode.
The UTC 16N50 is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
1
 FEATURES
TO-220F2
* RDS(ON) ≤ 0.38Ω @ VGS=10V, ID=8.0A
* High Switching Speed
* 100% Avalanche Tested
 SYMBOL
2.Drain

1.Gate

3.Source

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
16N50L-TA3-T 16N50G-TA3-T TO-220 G D S Tube
16N50L-TF1-T 16N50G-TF1-T TO-220F1 G D S Tube
16N50L-TF2-T 16N50G-TF2-T TO-220F2 G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source

16N50G-TA3-T
(1)Packing Type (1) T: Tube

(2)Package Type (2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2

(3)Green Package (3) G: Halogen Free and Lead Free, L: Lead Free

 MARKING

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16N50 Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS ±30 V
Continuous ID 16 A
Drain Current
Pulsed (Note 2) IDM 64 A
Avalanche Current (Note 2) IAR 12.9 A
Avalanche Energy Single Pulsed (Note 3) EAS 832 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 3.8 V/ns
TO-220 220 W
Power Dissipation PD
TO-220F1/TO-220F2 38 W
Junction Temperature TJ +150 °С
Storage Temperature TSTG -55 ~ +150 °С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=10mH, IAS=12.9A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤16A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
 THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 62.5 °C/W
TO-220 0.57 °C/W
Junction to Case θJC
TO-220F1/TO-220F2 3.29 °C/W

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16N50 Power MOSFET
 ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 500 V
Drain-Source Leakage Current IDSS VDS=500V, VGS=0V 10 µA
Forward VGS=+30V, VDS=0V +100 nA
Gate- Source Leakage Current IGSS
Reverse VGS=-30V, VDS=0V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=8A 0.38 Ω
DYNAMIC PARAMETERS
Input Capacitance CISS 2330 pF
Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz 260 pF
Reverse Transfer Capacitance CRSS 29 pF
SWITCHING PARAMETERS
Total Gate Charge (Note 1) QG 170 nC
VDS=50V, VGS=10V, ID=1.3A,
Gate to Source Charge QGS 16 nC
ID=100µA (Note 1, 2)
Gate to Drain Charge QGD 35.5 nC
Turn-ON Delay Time (Note 1) tD(ON) 114 ns
Rise Time tR VDS=30V, VGS=10V, ID=0.5A, 121 ns
Turn-OFF Delay Time tD(OFF) RG=25Ω (Note 1, 2) 590 ns
Fall-Time tF 185 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current IS 16 A
Maximum Body-Diode Pulsed Current ISM 64 A
Drain-Source Diode Forward Voltage (Note 1) VSD IS=16A, VGS=0V 1.4 V
Body Diode Reverse Recovery Time (Note 1) trr IS=16A, VGS=0V, 375 nS
Body Diode Reverse Recovery Charge Qrr dIF/dt=100A/µs 5.25 μC
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.

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16N50 Power MOSFET
 TEST CIRCUITS AND WAVEFORMS

Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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16N50 Power MOSFET
 TEST CIRCUITS AND WAVEFORMS (Cont.)

VDS
90%

10%
VGS
tD(ON) tD(OFF)
tR tF

Switching Test Circuit Switching Waveforms

VGS

QG
10V

QGS QGD

Charge

Gate Charge Test Circuit Gate Charge Waveform

BVDSS
IAS

ID(t)
VDS(t)
VDD

tp Time

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

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16N50 Power MOSFET
 TYPICAL CHARACTERISTICS

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16N50 Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

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