Академический Документы
Профессиональный Документы
Культура Документы
Manufacturing
Process
Group 6
Purification
• Silicon is found in quartzite
• Second most abundant element behind oxygen
• Other elements must be removed
• Quartzite heated to 2000⁰C then purified again through a
chemical process
• Silicon is now in rod form and sawed into wafers
Wafer Preparation
• Wafer is polished to be almost mirror like
• Final chemical process removes polishing materials
• Wafers packaged in ultra‐clean facility and ready for the
fabrication process
Semiconductor Fabrication Plant
• Built to keep dust particles off of semiconductors, to dampen
vibrations, and to control humidity and temperature
• Cost to build is at least $1 billion
• Equipment can cost anywhere from $700,000 to $4,000,000
• Hundreds of pieces of equipment are needed
Thermal Oxidation
• Usually performed at a temperature between 800 and
1200 ̊C, crea
̊ ng a High Temperature Oxide layer
• May use either water vapor or molecular oxygen as the
oxidant (called either wet or dry oxidation).
• Dry Oxidation: slow growth of oxide, high density, high
breakdown voltage.
• Wet Oxidation: fast growth (even on low temperatures), less
quality than dry oxides.
Photomasking
Etching Process
• The semi‐conductor covered in ‘masking
material’ (photoresist)
• Etching forms cavities in semi‐conductor layers
according to design.
• Goal is to completely remove one layer,
without harming underlying layer.
• Three main types of etching: Wet, Dry, Plasma
• Plasma Etching‐
Uses ions of gases, mainly Argon
Shoots ions toward layered surface
Transfer of momentum creates desired cavity
Diffusion Process
• Pure silicon doped with specific types of atoms
Alters electrical properties, mainly conductivity
Allows one to determine the carrier concentration
• Atoms used for doping:
Group III (boron)‐ produce p‐type semiconductor
Group V (phosphorous)‐ produce n‐type
semiconductor
• Heated to extreme temperatures to ‘diffuse’ with
intrinsic silicon
Ion Implantation
• Process of shooting ions of the desired dopant species into the
wafer through openings in the oxide or photoresist.
• Low temperature technique.
• Provides flexibility not available with diffusion.
• Ion Implanter is a large complex and expensive piece of
equipment. It’s made of several vacuum systems and a
computer controlled electronic system.
Metallization, Bonding, and
Packaging
• Metallization is a specialized deposition process that forms
critical interconnections between different areas of the chip
and different transistors.
• Also used to form the bonding pads that connect the chip to
package and then to the circuit board of the system it
supports.
• Wire Bonding is used to connect the bonding pads on the die
to the post (bonding area). There are three types of bonding:
thermo compression, ultrasonic, and thermo sonic ball
bonding.
• Packaging is completed by sealing the pieces of the housing
together or by encapsulation with a molding component.
Bonding
Video
• http://www.youtube.com/watch?v=yoeJQBZqqRo
Questions?
References
• http://smithsonianchips.si.edu/ice/cd/BT/SECTION2.PDF
• http://www.ece.gatech.edu/research/labs/vc/theory/oxide.ht
ml
• http://blogs.cae.tntech.edu/bwabegaz42/files/2013/10/Physic
al‐Electronics‐Slides‐of‐Chapter‐1‐All‐Slides‐.pdf
• http://www.ti.com/corp/docs/manufacturing/howchipmade.s
html
• http://www.pcgameshardware.com/aid,689436/How‐an‐Intel‐
CPU‐is‐created‐From‐Sand‐to‐Silicon‐Making‐of‐a‐
Chip/News/&menu=browser&image_id=1156836&article_id=
689436&page=1&show=original
• http://en.wikipedia.org/wiki/Wire_bonding