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SFH615A / SFH6156
Vishay Semiconductors
Features
• Excellent CTR Linearity Depending on
Forward Current
• Isolation Test Voltage, 5300 VRMS
• Fast Switching Times
1
• Low CTR Degradation
• Low Coupling Capacitance A 1 4 C
1
• Lead-free component
C 2 3 E
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC 17448 e3 Pb
Pb-free
Specifications subject to change. See TAPE AND REEL Section for 4-pin optocouplers T0 with 90 °
rotation.
Input
Parameter Test condition Symbol Value Unit
Reverse voltage VR 6.0 V
DC Forward current IF 60 mA
Surge forward current tp ≤ 10 µs IFSM 2.5 A
Power dissipation Pdiss 100 mW
Output
Parameter Test condition Symbol Value Unit
Collector-emitter voltage VCE 70 V
Emitter-collector voltage VCEO 7.0 V
Collector current IC 50 mA
tp ≤ 1.0 ms IC 100 mA
Power dissipation Pdiss 150 mW
Coupler
Parameter Test condition Symbol Value Unit
Isolation test voltage (between t = 1.0 s VISO 5300 VRMS
emitter and detector, refered to
climate DIN 40046, part 2,
Nov. 74
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Insulation thickness between ≥ 0.4 mm
emitter and detector
Comparative tracking index per ≥ 175
DIN IEC 112/VDE 0303, part 1
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω
Storage temperature range Tstg - 55 to + 150 °C
Ambient temperature range Tamb - 55 to + 100 °C
Soldering temperature max. 10 s, Dip soldering Tsld 260 °C
distance to seating plane
≥ 1.5 mm
150
Phototransistor
100
50 Diode
0
0 25 50 75 100 125 150
18483 Tamb – Ambient Temperature ( qC )
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 60mA VF 1.25 1.65 V
Reverse current VR = 6.0 V IR 0.01 10 µA
Capacitance VR = 0 V, f = 1.0 MHz CO 13 pF
Thermal resistance Rthja 750 K/W
Output
Parameter Test condition Part Symbol Min Typ. Max Unit
Collector-emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE 5.2 pF
Thermal resistance Rthja 500 K/W
Collector-emitter leakage VCE = 10 V SFH615A-1 ICEO 2.0 50 nA
current SFH6156-1
SFH615A-2 ICEO 2.0 50 nA
SFH6156-2
SFH615A-3 ICEO 5.0 100 nA
SFH6156-3
SFH615A-4 ICEO 5.0 100 nA
SFH6156-4
Coupler
Parameter Test condition Symbol Min Typ. Max Unit
Collector-emitter saturation IF = 10 mA, IC = 2.5 mA VCEsat 0.25 0.4 V
voltage
Coupling capacitance CC 0.4 pF
Switching Characteristics
Switching Non-saturated
Parameter Test condition Symbol Min Typ. Max Unit
Rise Time IF = 10 mA, VCC = 5.0 V, TA = 25 °C, RL = 75 Ω tr 2.0 µs
Fall Time IF = 10 mA, VCC = 5.0 V, TA = 25 °C, RL = 75 Ω tf 2.0 µs
Turn-on time IF = 10 mA, VCC = 5.0 V, TA = 25 °C, RL = 75 Ω ton 3.0 µs
Turn-off time IF = 10 mA, VCC = 5.0 V, TA = 25 °C, RL = 75 Ω toff 2.3 µs
Cut-off IF = 10 mA, VCC = 5.0 V, TA = 25 °C, RL = 75 Ω fctr 250 kHz
frequency
Switching Saturated
Parameter Test condition Part Symbol Min Typ. Max Unit
Rise time VCC = 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 20 mA SFH615A-1 tr 2.0 µs
SFH6156-1
VCC = 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 10 mA SFH615A-2 tr 3.0 µs
SFH6156-2
SFH615A-3 tr 3.0 µs
SFH6156-3
VCC = 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 5.0 mA SFH615A-4 tr 4.6 µs
SFH6156-4
Fall time VCC = 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 20 mA SFH615A-1 tf 11 µs
SFH6156-1
VCC = 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 10 mA SFH615A-2 tf 14 µs
SFH6156-2
SFH615A-3 tf 14 µs
SFH6156-3
VCC = 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 5.0 mA SFH615A-4 tf 15 µs
SFH6156-4
Turn-on time VCC = 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 20 mA SFH615A-1 ton 3.0 µs
SFH6156-1
VCC = 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 10 mA SFH615A-2 ton 4.2 µs
SFH6156-2
SFH615A-3 ton 4.2 µs
SFH6156-3
VCC = 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 5.0 mA SFH615A-4 ton 6.0 µs
SFH6156-4
10 3
% IF = 10 mA, VCE = 5.0 V
5
4
IC
IF RL = 75 Ω IF 3
VCC = 5 V 2
IC 10 2
1
5
47 Ω
101
–25 0 25 50 °C 75
TA
isfh615a_01 isfh615a_01
Figure 2. Linear Operation (without Saturation) Figure 4. Current Transfer Ratio (typical) vs. Temperature
30
mA IF=14 mA
12 mA
IC 20
IF 1Ω 10 mA
VCC = 5 V
8.0 mA
10 6.0 mA
4.0 mA
47 Ω 1.0 mA 2.0 mA
0
0 5 10 V 15
VCE
isfh615a_02 isfh615a_04
Figure 3. Switching Operation (with Saturation) Figure 5. Output Characteristics (typ.) Collector Current vs.
Collector-Emitter Voltage
1.2
V 25°
50°
75°
1.1
VF
1.0
0.9
10 –1 10 0 101 mA 10 2
IF
isfh615a_05
20
pF
f = 1.0 MHz
15
C
10
C CE
0
10 –2 10 –1 10 –0 101 V 102
Ve
isfh615a_06
10 4
mA D=0
5 0.005 tp
0.01 tp
0.02 D= IF
T
0.05 T
10 3 0.1
IF
5
10 2
5 0.2
0.5 Pulse cycle D = parameter
DC
10 1
10 –5 10 –4 10 –3 10 –2 10 –1 10 0 s 10 1
tp
isfh615a_07
2 1
pin one ID
.255 (6.48)
.268 (6.81) ISO Method A
3 4
.179 (4.55)
.190 (4.83)
.130 (3.30)
.150 (3.81) .230 (5.84)
.250 (6.35)
10°
4° .110 (2.79)
typ. .020 (.508 ) .130 (3.30)
.035 (.89) 3°–9°
.018 (.46) .008 (.20)
.022 (.56) .050 (1.27) .012 (.30)
i178027
.100 (2.54)
SMD
.030 (.76)
pin one ID R .010 (.25)
.100 (2.54)
.070 (1.78)
.255 (6.48)
.268 (6.81) .315 (8.00) min .060 (1.52)
.435 (11.05)
3 4
.375 (9.52)
.305 (10.03)
.179 (4.55)
.190 (4.83) .296 (7.52)
.030 (.76) .031 (.79) .312 (7.90)
.045 (1.14) typ. 10°
.010 (.25)
.130 (3.30) typ.
.150 (3.81)
ISO Method A
.315 (8.00)
4° typ. .0098 (.249)
.035 (.102) min.
1.00 (2.54)typ. 3°–7°
Lead .020 (.508)
.050 (1.27) coplanarity .040 (1.02)
typ. .004 max.
i178029
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)ref.
0040 (.102)
0098 (.249)
.012 (.30) typ.
.020 (.51)
.040 (1.02)
15° max.
.315 (8.00)
18486 min.