VDS

1200 V

C3M0032120K ID @ 25˚C 63 A

RDS(on) 32 mΩ
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
N-Channel Enhancement Mode
Features Package

• 3rd generation SiC MOSFET technology TAB

• Optimized package with separate driver source pin Drain

• 8mm of creepage distance between drain and source

• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant

Benefits
Drain
(Pin 1, TAB)
• Reduce switching losses and minimize gate ringing 1 2 3 4
• Higher system efficiency D S S G

• Reduce cooling requirements

• Increase power density
• Increase system switching frequency
Gate
(Pin 4)

Driver Power
Applications Source
(Pin 3)
Source
(Pin 2)

• Solar inverters
• EV motor drive
• High voltage DC/DC converters
Marking
• Switched mode power supplies Part Number Package
• Load switch
C3M0032120K TO 247-4 C3M0032120K

Maximum Ratings (TC = 25 ˚C unless otherwise specified)

Symbol Parameter Value Unit Test Conditions Note

VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 μA

VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note 1

VGSop Gate - Source Voltage (static) -4/+15 V Static Note 2

63 VGS = 15 V, TC = 25˚C
ID Continuous Drain Current A Fig. 19
48 VGS = 15 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 120 A Pulse width tP limited by Tjmax

PD Power Dissipation 283 W TC=25˚C, TJ = 175 ˚C Fig. 20

-40 to
TJ , Tstg Operating Junction and Storage Temperature
+175
˚C

TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s

Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V

Note (2): MOSFET can also safely operate at 0/+15 V

1 C3M0032120K Rev. -, 06-2019

Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 μA
1.8 2.5 3.6 V VDS = VGS, ID = 11.5 mA
VGS(th) Gate Threshold Voltage Fig. 11
2.0 V VDS = VGS, ID = 11.5 mA, TJ = 175ºC
IDSS Zero Gate Voltage Drain Current 1 50 μA VDS = 1200 V, VGS = 0 V
IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V
23 32 43 VGS = 15 V, ID = 40 A Fig. 4,
RDS(on) Drain-Source On-State Resistance mΩ
57.6 VGS = 15 V, ID = 40 A, TJ = 175ºC 5, 6

27 VDS= 20 V, IDS= 40 A
gfs Transconductance S Fig. 7
22 VDS= 20 V, IDS= 40 A, TJ = 175ºC
Ciss Input Capacitance 3357
VGS = 0 V, VDS = 1000 V Fig. 17,
Coss Output Capacitance 129 pF
f = 100 kHz 18
Crss Reverse Transfer Capacitance 8 VAC = 25 mV
Eoss Coss Stored Energy 76 μJ Fig. 16
EON Turn-On Switching Energy (SiC Diode FWD) 367 VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A,
μJ Fig. 26
EOFF Turn Off Switching Energy (SiC Diode FWD) 123 RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC

EON Turn-On Switching Energy (Body Diode FWD) 955 VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A,
μJ Fig. 26
EOFF Turn Off Switching Energy (Body Diode FWD) 107 RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC
td(on) Turn-On Delay Time 25
VDD = 800 V, VGS = -4 V/15 V
tr Rise Time 18
ns RG(ext) = 2.5 Ω, ID = 40 A, L= 65.7 Fig. 27
td(off) Turn-Off Delay Time 32 Timing relative to VDS, Inductive load
tf Fall Time 9
RG(int) Internal Gate Resistance 1.7 Ω f = 1 MHz, VAC = 25 mV
Qgs Gate to Source Charge 40
VDS = 800 V, VGS = -4 V/15 V
Qgd Gate to Drain Charge 34 nC ID = 40 A Fig. 12
Qg Total Gate Charge 118 Per IEC60747-8-4 pg 21

2 C3M0032120K Rev. -, 06-2019

Reverse Diode Characteristics (TC = 25˚C unless otherwise specified)
Symbol Parameter Typ. Max. Unit Test Conditions Note

4.6 V VGS = -4 V, ISD = 20 A, TJ = 25 °C

Fig. 8,
VSD Diode Forward Voltage 9, 10
4.2 V VGS = -4 V, ISD = 20 A, TJ = 175 °C

IS Continuous Diode Forward Current 62 A VGS = -4 V, TC = 25˚C Note 1

IS, pulse Diode pulse Current 120 A VGS = -4 V, pulse width tP limited by Tjmax Note 1

trr Reverse Recover time 27 ns

VGS = -4 V, ISD = 40 A, VR = 800 V
Qrr Reverse Recovery Charge 478 nC Note 1
dif/dt = 2250 A/µs, TJ = 175 °C
Irrm Peak Reverse Recovery Current 27 A

Thermal Characteristics

Symbol Parameter Typ. Unit Test Conditions Note

RθJC Thermal Resistance from Junction to Case 0.45
°C/W Fig. 21
RθJA Thermal Resistance From Junction to Ambient 40

3 C3M0032120K Rev. -, 06-2019

Typical Performance

120 120
Conditions: VGS = 15V VGS = 13V Conditions: VGS = 15V VGS = 13V VGS = 11V
TJ = -40 °C TJ = 25 °C
tp = < 200 µs tp = < 200 µs
100 100
VGS = 11V
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

80 80

60 60
VGS = 9V

40 40
VGS = 9V

20 20 VGS = 7V
VGS = 7V

0 0
0.0 2.0 4.0 6.0 8.0 10.0 12.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 1. Output Characteristics TJ = -40 ºC Figure 2. Output Characteristics TJ = 25 ºC

120 2.0
Conditions: VGS = 15V Conditions:
TJ = 175 °C 1.8 IDS = 40 A
tp = < 200 µs VGS = 13V VGS = 11V
100 VGS = 15 V
1.6 tp < 200 µs
Drain-Source Current, IDS (A)

On Resistance, RDS On (P.U.)

VGS = 9V
1.4
80
1.2

60 1.0

0.8
40 VGS = 7V 0.6

0.4
20
0.2

0 0.0
0.0 2.0 4.0 6.0 8.0 10.0 12.0 -40 -20 0 20 40 60 80 100 120 140 160 180
Drain-Source Voltage, VDS (V) Junction Temperature, TJ (°C)

Figure 3. Output Characteristics TJ = 175 ºC Figure 4. Normalized On-Resistance vs. Temperature

80 90
Conditions: Conditions:
VGS = 15 V 80 IDS = 40 A
70 tp < 200 µs tp < 200 µs
70
60
On Resistance, RDS On (mOhms)

On Resistance, RDS On (mOhms)

TJ = 175 °C 60
50 VGS = 11 V
50
40
TJ = -40 °C VGS = 13 V
40
30 TJ = 25 °C
30 VGS = 15 V
20 20

10 10

0 0
0 20 40 60 80 100 120 140 160 -40 -5 30 65 100 135 170
Drain-Source Current, IDS (A) Junction Temperature, TJ (°C)

Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Temperature

For Various Temperatures For Various Gate Voltage

4 C3M0032120K Rev. -, 06-2019

Typical Performance

160 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
Conditions: 0
VDS = 20 V
140 tp < 200 µs
VGS = -4 V
TJ = 175 °C -20

Drain-Source Current, IDS (A)

120
Drain-Source Current, IDS (A)

VGS = 0 V
TJ = 25 °C
100
-40
TJ = -40 °C VGS = -2 V
80
-60
60

40 -80

20
Conditions:
-100
0 TJ = -40°C
0 2 4 6 8 10 12 14 tp < 200 µs
-120
Gate-Source Voltage, VGS (V) Drain-Source Voltage VDS (V)

Figure 7. Transfer Characteristic for

Figure 8. Body Diode Characteristic at -40 ºC
Various Junction Temperatures
-9 -8 -7 -6 -5 -4 -3 -2 -1 0 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
0 0

VGS = -4 V
VGS = -4 V
-20 -20
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

VGS = 0 V VGS = 0 V

-40 -40
VGS = -2 V VGS = -2 V

-60 -60

-80 -80

Conditions:
-100 Conditions:
-100
TJ = 25°C TJ = 175°C
tp < 200 µs tp < 200 µs
-120 -120
Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)

Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 175 ºC

4.0 16
Conditons Conditions:
VGS = VDS IDS = 40 A
3.5 IGS = 50 mA
IDS = 11.5 mA
12 VDS = 800 V
3.0 TJ = 25 °C
Gate-Source Voltage, VGS (V)
Threshold Voltage, Vth (V)

2.5
8

2.0

1.5 4

1.0
0
0.5

0.0 -4
-40 -5 30 65 100 135 170 0 20 40 60 80 100 120
Junction Temperature TJ (°C) Gate Charge, QG (nC)

Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics

5 C3M0032120K Rev. -, 06-2019

Typical Performance
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
0 0

-20 -20
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

VGS = 0 V
VGS = 0 V
VGS = 5 V
VGS = 5 V
-40 -40

VGS = 10 V VGS = 10 V
-60 -60
VGS = 15 V
VGS = 15 V
-80 -80

Conditions: -100 Conditions: -100

TJ = -40 °C TJ = 25 °C
tp < 200 µs tp < 200 µs
-120 -120
Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)

Figure 13. 3rd Quadrant Characteristic at -40 ºC Figure 14. 3rd Quadrant Characteristic at 25 ºC

-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 120
0

VGS = 0 V 100
-20
Drain-Source Current, IDS (A)

Stored Energy, EOSS (µJ)

80
VGS = 5 V
-40
VGS = 10 V
60

VGS = 15 V
-60
40
-80
20

Conditions: -100
TJ = 175 °C 0
tp < 200 µs
0 200 400 600 800 1000 1200
-120
Drain-Source Voltage VDS (V) Drain to Source Voltage, VDS (V)

Figure 15. 3rd Quadrant Characteristic at 175 ºC Figure 16. Output Capacitor Stored Energy

10000 10000
Conditions:
Ciss TJ = 25 °C Ciss
VAC = 25 mV
f = 100 kHz Conditions:
1000 1000 TJ = 25 °C
VAC = 25 mV
Coss f = 100 kHz
Capacitance (pF)

Capacitance (pF)

Coss
100 100

Crss
Crss
10 10

1 1
0 50 100 150 200 0 200 400 600 800 1000 1200
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 17. Capacitances vs. Drain-Source Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 200V) Voltage (0 - 1200V)

6 C3M0032120K Rev. -, 06-2019

Typical Performance
80 350
Conditions: Conditions:
TJ ≤ 175 °C TJ ≤ 175 °C
Drain-Source Continous Current, IDS (DC) (A)

70
300

Maximum Dissipated Power, Ptot (W)

60
250
50
200
40
150
30

100
20

10 50

0 0
-55 -30 -5 20 45 70 95 120 145 170 -55 -30 -5 20 45 70 95 120 145 170
Case Temperature, TC (°C) Case Temperature, TC (°C)

Figure 19. Continuous Drain Current Derating vs. Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature Case Temperature

1 100.00
Junction To Case Impedance, ZthJC (oC/W)

Limited by RDS On 10 µs
Drain-Source Current, IDS (A)

100 µs
0.5
10.00 1 ms

0.3 100 ms
100E-3
0.1

0.05 1.00

0.02
10E-3
0.01 0.10
Conditions:
SinglePulse
TC = 25 °C
D = 0,

0.01
1E-3
0.1 1 10 100 1000
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Time, tp (s) Drain-Source Voltage, VDS (V)

Figure 21. Transient Thermal Impedance

Figure 22. Safe Operating Area
(Junction - Case)

800 1200
Conditions: Conditions:
TJ = 25 °C ETotal TJ = 25 °C
700 ETotal
VDD = 600 V VDD = 800 V
1000
RG(ext) = 2.5 Ω RG(ext) = 2.5 Ω
600 VGS = -4V/+15V VGS = -4V/+15V
FWD = C3M0032120K FWD = C3M0032120K
L = 65.7 μH 800 L = 65.7 μH
500
Switching Loss (µJ)

Switching Loss (µJ)

EOn EOn

400 600

300
400
200 EOff
EOff
200
100

0 0
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
Drain to Source Current, IDS (A) Drain to Source Current, IDS (A)

Figure 23. Clamped Inductive Switching Energy vs. Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 600V) Drain Current (VDD = 800V)

7 C3M0032120K Rev. -, 06-2019

Typical Performance

2500 1200
Conditions: Conditions:
TJ = 25 °C IDS = 40 A ETotal
ETotal
VDD = 800 V VDD = 800 V
IDS = 40 A 1000 RG(ext) = 2.5 Ω
2000 EOn
VGS = -4V/+15 V VGS = -4V/+15 V
FWD = C3M0032120K L = 65.7 μH
L = 65.7 μH 800 FWD = C3M0032120K
Switching Loss (µJ)

Switching Loss (µJ)

1500 - - - - FWD = C4D20120A

EOn 600
ETotal (FWD Diode)
1000
EOff 400
EOn (FWD Diode)

500
200
EOff (FWD Diode)

EOff
0 0
0 5 10 15 20 25 0 25 50 75 100 125 150 175 200
External Gate Resistor RG(ext) (Ohms) Junction Temperature, TJ (°C)

Figure 26. Clamped Inductive Switching Energy vs.

Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
Temperature

120
Conditions:
TJ = 25 °C
td(off)
VDD = 800 V
100
IDS = 40 A
VGS = -4V/+15 V
FWD = C3M0032120K td(on)
Switching Times (ns)

80

60

tr
40
tf

20

0
0 5 10 15 20 25
External Gate Resistor RG(ext) (Ohms)

Figure 27. Switching Times vs. RG(ext) Figure 28. Switching Times Definition

8 C3M0032120K Rev. -, 06-2019

Test Circuit Schematic

RG Q1
L
VGS= - 4 V KS
VDC CDC

RG Q2
D.U.T
KS

Figure 29. Clamped Inductive Switching

Waveform Test Circuit

Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.

9 C3M0032120K Rev. -, 06-2019

Package Dimensions

Package TO-247-4L

E1
E3 E4
E2

BASE METAL

SECTION "F-F", "G-G" AND "H-H"

SCALE: NONE

10 C3M0032120K Rev. -, 06-2019

Package Dimensions

Package TO-247-4L

NOTE ;
1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT
2. DIMENSIONING & TOLERANCEING CONFIRM TO
ASME Y14.5M-1994.
3. ALL DIMENSIONS ARE IN MILLIMETERS.
ANGLES ARE IN DEGREES.

MILLIMETERS MILLIMETERS
SYM SYM
MIN MAX MIN MAX
A 4.83 5.21 E1 13.10 14.15
A1 2.29 2.54 E2 3.68 5.10
A2 1.91 2.16 E3 1.00 1.90
b' 1.07 1.28 E4 12.38 13.43
b 1.07 1.33 e 2.54 BSC
b1 2.39 2.94 e1 5.08 BSC
b2 2.39 2.84 N 4
b3 1.07 1.60 L 17.31 17.82
b4 1.07 1.50 L1 3.97 4.37
b5 2.39 2.69 L2 2.35 2.65
b6 2.39 2.64 øP 3.51 3.65
c' 0.55 0.65 Q 5.49 6.00
c 0.55 0.68 S 6.04 6.30
D 23.30 23.60 T 17.5° REF.
D1 16.25 17.65 W 3.5 ° REF.
D2 0.95 1.25 X 4 ° REF.
E 15.75 16.13

Recommended Solder Pad Layout

11 C3M0032120K Rev. -, 06-2019

Notes

• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.

• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.

• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems.

Related Links

• SPICE Models: http://wolfspeed.com/power/tools-and-support

• SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support

• SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support

Cree, Inc.
Copyright © 2019 Cree, Inc. All rights reserved. 4600 Silicon Drive
Durham, NC 27703
The information in this document is subject to change without notice. USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. www.wolfspeed.com/power

12 C3M0032120K Rev. - , 06-2019