UNISONIC TECHNOLOGIES CO.

, LTD
2SC5027 NPN SILICON TRANSISTOR

HIGH VOLTAGE AND HIGH

RELIABILITY

 FEATURES
* High Voltage (VCEO = 750V)
* High Speed Switching
* Wide SOA

 ORDERING INFORMATION
Order Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
2SC5027L-x-TA3-T 2SC5027G-x-TA3-T TO-220 B C E Tube
2SC5027L-x-TF3-T 2SC5027G-x-TF3-T TO-220F B C E Tube
Note: Pin Assignment: B: Base C: Collector E: Emitter

 MARKING

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2SC5027 NPN SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (TC= 25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 850 V
Collector-Emitter Voltage VCEO 750 V
Collector-Emitter Voltage VEBO 7 V
Peak Collector Current IC 3 A
Collector Current (Pulse) ICP 10 A
Base Current IB 1.5 A
Power Dissipation PC 50 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TC= 25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=1mA, IE=0 850 V
Collector-Emitter Breakdown Voltage BVCEO IC=5mA, IB=0 750 V
Emitter-Base Breakdown Voltage BVEBO IE=1mA, IC=0 7 V
Collector Cut-off Current ICBO VCB=800V, IE=0 10 μA
Emitter Cut-off Current IEBO VEB=5V, IC=0 10 μA
hFE1 VCE=5V, IC=0.2A 10 40
DC Current Gain
hFE 2 VCE=5V, IC=1A 8
Collector-Emitter Saturation Voltage VCE (SAT) IC=1.5A, IB=0.3A 2 V
Base-Emitter Saturation Voltage VBE (SAT) IC=1.5A, IB=0.3A 1.5 V
Output Capacitance Cob VCB=10V, f=1MHz, IE=0 60 pF
Current Gain Bandwidth Product fT VCE=10V, IC=0.2A 15 MHz
Turn ON Time tON VCC=400V 0.5 μs
Storage Time tS IC=5IB1= -2.5IB2=2A 3 μs
Fall Time tF RL=200Ω 0.3 μs

 CLASSIFICATION of hFE1
RANK N R O
RANGE 10 ~ 20 15 ~ 30 20 ~ 40

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2SC5027 NPN SILICON TRANSISTOR
 TYPICAL CHARACTERISTICS

Static Characteristic Switching Time

Collector Current vs. Collector-Emitter Voltage Time vs. Collector-Emitter Voltage
4.0 10
3.6
3.2

TIME, tON, tstg, tF (μs)

Collector Current, IC (A)

2.8 1
2.4
IB=150mA
2.0
1.6 IB=100mA
0.1
1.2 IB=50mA

0.8
IB=10mA
0.4 Vcc=400V
5.IB1= - 2.5.IB2=Ic
1ms
0.0 0.01
0 1 2 3 4 5 6 7 8 9 10 0.1 1 10

Collector-Emitter Voltage, VCE (V) Collector-Emitter Voltage, VCE (V)

Collector Current vs. Base-Emitter Voltage Saturation Voltage vs. Collector Current
4.0 10
VCE=5V Ic=5IB
3.5
Saturation Voltage, VCE(SAT) (V)

3.0
Collector Current, Ic (A)

VBE(SAT)
1
2.5

2.0

1.5 0.1

1.0 VCE(SAT)

0.5

0.0 100us 1ms

0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10

Base-Emitter Voltage, VBE (V) Collector Current, IC (A)

10
0
s
D
C

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2SC5027 NPN SILICON TRANSISTOR
 TYPICAL CHARACTERISTICS (Cont.)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

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