e

PTB 20082
15 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20082 is a class AB, NPN, common emitter RF power transistor • 10 Watts Linear Power
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts • Output Power at 1 dB Compressed = 15 W
output power, it may be used for both CW and PEP applications. Ion
implantation, nitride surface passivation and gold metallization ensure
• Class AB Characteristics
excellent device reliability. 100% lot traceability is standard. • 30% Collector Efficiency at 7.5 Watts
• Gold Metallization
• Silicon Nitride Passivated

Typical Output Power vs. Input Power

20
Output Power (Watts)

16

200
12 82
LOT
COD
E

8 VCC = 26 V
ICQ = 70 mA
4 f = 2.0 GHz

0
0 1 2 3 4
Input Power (Watts) Package 20209

Maximum Ratings

Parameter Symbol Value Unit

Collector-Emitter Voltage VCER 50 Vdc

Collector-Base Voltage VCBO 50 Vdc

Emitter-Base Voltage (collector open) VEBO 4.0 Vdc

Collector Current (continuous) IC 1.4 Adc

Total Device Dissipation at Tflange = 25°C PD 52 Watts

Above 25°C derate by 0.29 W/°C
Storage Temperature Range TSTG –40 to +150 °C

Thermal Resistance (Tflange = 70°C) RθJC 3.4 °C/W

9/28/98
This datasheet has been downloaded from http://www.digchip.com at this page
PTB 20082 e
Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Breakdown Voltage C to E IB = 0 A, IC = 5 mA, RBE = 22 Ω V(BR)CER 50 — — Volts

Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V(BR)CES 50 — — Volts

Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 5 — Volts

DC Current Gain VCE = 5 V, IC = 250 mA hFE 20 — — —

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Gain
(VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA, f = 2.0 GHz) Gpe 8 9 — dB
Output Power at 1 dB Compression
(VCC = 26 Vdc, ICQ = 70 mA, f = 2.0 GHz) P-1dB 15 — — Watts
Collector Efficiency
(VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA, f = 2.0 GHz) ηC 30 — — %
Load Mismatch Tolerance
(VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA, Ψ — — 5:1 —
f = 2.0 GHz—all phase angles at frequency of test)

Typical Performance

POUT, Gain & Efficiency (at P-1dB) vs. Frequency Broadband Test Fixture Performance
10 60 20 60
Gain (dB)
Output Power & Efficiency

VCC = 26 V

Efficiency
9 50 50
ICQ = 70 mA
16
POUT = 7.5 W 40
8 40 Efficiency (%)
Gain

Gain

Efficiency (%)
VCC = 26 V 12 30
7 30
ICQ = 70 mA
Return Loss
Gain (dB)
-15
20
Output Power (W) 8
6 20
-25
10

5 10 Return Loss (dB)

4 -35
0
1750 1800 1850 1900 1950 2000 2050
1900 1925 1950 1975 2000
Frequency (MHz) Frequency (MHz)

5/11/98
e PTB 20082

Output Power vs. Supply Voltage Intermodulation Distortion vs. Output Power
20 -20
Output Power (Watts)

18 -30

IMD (dBc)
16 -40

VCC = 28 V
14 -50
ICQ = 40 mA
ICQ = 70 mA f1 = 1999.9 MHz
12 -60
f = 2.0 GHz
f2 = 2000.0 MHz
10 -70
22 23 24 25 26 27 1 3 5 7 9 11 13 15
Supply Voltage (Volts) Output Power (Watts-PEP)

Power Gain vs. Output Power

10

9 ICQ = 70 mA
Power Gain (dB)

8
ICQ = 35 mA
7

VCC = 26 V
6
ICQ = 18 mA f = 2.0 GHz
5
0.1 1.0 10.0 100.0
Output Power (Watts)

Impedance Data
VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA Z Source Z Load

Z0 = 50 Ω

Frequency Z Source Z Load

GHz R jX R jX
1.75 5.8 -12.7 9.29 -0.6
1.80 5.8 -11.9 10.15 -0.9
1.85 5.8 -11.4 9.80 -1.3
1.90 5.8 -10.2 9.58 -1.5
1.95 6.0 -8.8 8.83 -1.5
2.00 7.1 -5.9 8.23 -1.3
2.05 7.7 -4.9 8.79 -0.7

5/6/98
PTB 20082 e
Typical Scattering Parameters
(VCE = 26 V, IC = 0.5 A)
f S11 S21 S12 S22
(MHz) Mag Ang Mag Ang Mag Ang Mag Ang
100 0.855 -176 4.80 82 0.008 -24 0.776 -172
200 0.879 -176 3.55 75 0.007 -27 0.821 -172
300 0.931 -176 1.36 40 0.003 -29 0.911 -174
400 0.961 -178 0.558 22 0.002 31 0.962 -177
500 0.977 -179 0.157 19 0.004 78 0.985 180
600 0.984 180 0.103 145 0.006 84 1.00 177
700 0.989 178 0.263 149 0.009 81 0.998 173
800 0.992 177 0.380 142 0.012 76 0.962 170
900 0.998 176 0.476 134 0.015 72 0.931 168
1000 0.998 175 0.563 125 0.018 66 0.896 166
1100 0.997 173 0.650 116 0.021 60 0.868 165
1200 0.991 172 0.740 107 0.023 54 0.833 164
1300 0.987 170 0.847 98 0.026 50 0.791 162
1400 0.974 168 0.978 87 0.030 44 0.738 161
1500 0.950 165 1.15 75 0.035 35 0.674 161
1600 0.905 163 1.39 59 0.041 24 0.594 164
1700 0.824 160 1.67 39 0.047 7 0.523 173
1800 0.708 163 1.86 12 0.050 -18 0.552 -172
1900 0.659 173 1.83 -17 0.044 -45 0.702 -167
2000 0.731 -178 1.57 -46 0.033 -69 0.839 -171
2100 0.827 -178 1.22 -69 0.023 -91 0.892 -178
2200 0.889 -180 0.919 -85 0.016 -114 0.894 178

Ericsson Components
RF Power Products 1-877-GOLDMOS Specifications subject to change without notice.
675 Jarvis Drive (1-877-465-3667) L1
Morgan Hill, CA 95037 USA e-mail: rfpower@ericsson.com © Ericsson Inc. Components AB 1995
Telephone: 408-778-9434 www.ericsson.com/rfpower EUS/KR 1301-PTB 20082 Uen Rev. D 09-28-98