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RJK03H1DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode
Power Switching R07DS0216EJ0200
Rev.2.00
Dec 07, 2010
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 2.0 m typ. (at VGS = 8.0 V)
Pb-free
Halogen-free
Outline
4 1, 2, 3 Source
G 4 Gate
4 3 2 1 5, 6, 7, 8 Drain
S S S
1 2 3
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0
Gate to source leak current IGSS — — ± 0.1 A VGS = ±12 V, VDS = 0
Zero gate voltage drain current IDSS — — 1 mA VDS = 30 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.2 — 2.5 V VDS = 10 V, I D = 1 mA
Static drain to source on state RDS(on) — 2.0 2.4 m ID = 22.5A, VGS = 8.0 V Note4
resistance RDS(on) — 2.4 3.0 m ID = 22.5A, VGS = 4.5 V Note4
Forward transfer admittance |yfs| — 120 — S ID = 22.5A, VDS = 5 V Note4
Input capacitance Ciss — 5300 7420 pF VDS = 10 V
Output capacitance Coss — 590 — pF VGS = 0
Reverse transfer capacitance Crss — 400 — pF f = 1 MHz
Gate Resistance Rg — 1.3 2.6
Total gate charge Qg — 40 — nC VDD = 10 V
Gate to source charge Qgs — 14 — nC VGS = 4.5 V
Gate to drain charge Qgd — 12 — nC ID = 45 A
Turn-on delay time td(on) — 20.8 — ns VGS = 8 V, ID = 22.5 A
Rise time tr — 9.4 — ns VDD 10 V
Turn-off delay time td(off) — 72.9 — ns RL = 0.44
Fall time tf — 18.4 — ns Rg = 4.7
Body–drain diode forward voltage VDF — 0.39 — V IF = 2 A, VGS = 0 Note4
Body–drain diode reverse recovery trr — 48.6 — ns IF =45 A, VGS = 0
time diF/ dt = 100 A/ s
Notes: 4. Pulse test
Main Characteristics
10
10 μs
40 10 PW = 10 ms
DC
Operation in
Op
20 1 this area is
era
limited by RDS(on)
tio
Tc = 25 °C
n
1 shot Pulse
0.1
0 50 100 150 200 0.1 1 10 100
2.45 V
30 30
2.4 V
20 20
VGS = 2.3 V
10 10 25°C
Tc = 75°C
–25°C
0 2 4 6 8 10 0 1 2 3 4 5
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs. Static Drain to Source On State Resistance
Gate to Source Voltage vs. Drain Current
Static Drain to Source On State Resistance
RDS(on) (mΩ)
160 100
Drain to Source Saturation Voltage
VDS(on) (mV)
120 30
80 10
ID = 20 A
40 3 VGS = 4.5 V
10 A
5A 8V
1
0 3 6 9 12 1 3 10 30 100 300 1000
Capacitance C (pF)
1000
6 Coss
ID = 5 A, 10 A, 20 A 300
4 Crss
VGS = 4.5 V 100
2
30
8V VGS = 0
5 A, 10 A, 20 A
f = 1 MHz
0 10
–25 0 25 50 75 100 125 150 0 10 20 30
ID = 45 A
Gate to Source Voltage VGS (V)
8V Pulse Test
Reverse Drain Current IDR (A)
4.5 V
40 16 40
VGS
30 12 30
VDS
VDD = 25 V
10 V
20 8 20
10 4 10 VGS = 0, –5 V
VDD = 25 V
10 V
0 0
0 40 60 80 100 0 0.4 0.8 1.2 1.6 2.0
20
50
IAP = 20 A
VDD = 15 V
40 duty < 0.1%
Rg ≥ 50 Ω
30
20
10
0
25 50 75 100 125 150
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
PW
PDM D=
.02 T
0 se
0.03
1 p ul
0.0 hot PW
1 s T
0.01
1m 10 m 100 m 1 10
VDSS
1
EAR = L • IAP2 •
L 2 VDSS – VDD
VDS
Monitor
IAP V(BR)DSS
Monitor
IAP
Rg D. U. T VDD VDS
ID
Vin
15 V
VDD
0
td(on) tr td(off) tf
Package Dimensions
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
WPAK(3) ⎯ PWSN0008DC-B WPAK(3)V 0.075g Unit: mm
0.5 ± 0.15
4.23Typ
3.92 ± 0.22
3.6 ± 0.2
+0.1
-0.2
+0.1
-0.3
5.9
6.1
0.04Min
0.7Typ
0.5 ± 0.15
0.545Typ 1.27Typ 0.21Typ 0.42 ± 0.08
Stand-off
4.90 ± 0.1
0.05Max
0Min
(Sn plating)
Notice:The reverse pattern of die-pad
support lead described above exists.
Ordering Information
Orderable Part Number Quantity Shipping Container
RJK03H1DPA-00-J5A 3000 pcs Taping