AO4433

30V P-Channel MOSFET

General Description Product Summary

The AO4433 uses advanced trench technology to VDS (V) = -30V

provide excellent RDS(ON) and ultra-low low gate charge ID = -11 A (VGS = -20V)
with a 25V gate rating. This device is suitable for use RDS(ON) < 14mΩ (VGS = -20V)
as a load switch or in PWM applications. RDS(ON) < 18mΩ (VGS = -10V)
RDS(ON) < 36mΩ (VGS= -5V)

ESD Protected
100% UIS Tested
100% Rg Tested

SOIC-8
D
Top View Bottom
D
D
D
D
G

G
S S
S
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TA=25°C -11
Current AF TA=70°C ID -9.7 A
B
Pulsed Drain Current IDM -50
TA=25°C 3
A
PD W
Power Dissipation TA=70°C 2.1
B
Avalanche Current IAR -36 A
B
Repetitive avalanche energy 0.1mH EAR 65 mJ
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient AF t ≤ 10s 28 40 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 54 75 °C/W
C
Maximum Junction-to-Lead Steady-State RθJL 21 30 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4433

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±25V ±10 µA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 -2.45 -3.5 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -50 A
VGS=-20V, ID=-11A 11 14
mΩ
TJ=125°C 15 19
RDS(ON) Static Drain-Source On-Resistance
VGS=-10V, ID=-10A 13.8 18 mΩ
VGS=-5V, ID=-5A 25.8 36 mΩ
gFS Forward Transconductance VDS=-5V, ID=-11A 20 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.72 -1 V
IS Maximum Body-Diode Continuous Current -4.2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1760 2200 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 360 pF
Crss Reverse Transfer Capacitance 255 357 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3.2 6.4 8 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 30 38 nC
Qgs Gate Source Charge VGS=-10V, VDS=-15V, ID=-11A 7 nC
Qgd Gate Drain Charge 8 nC
tD(on) Turn-On DelayTime 11.5 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=1.5Ω, 8 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 35 ns
tf Turn-Off Fall Time 18.5 ns
trr Body Diode Reverse Recovery Time IF=-11A, dI/dt=100A/µs 24 30 ns
Qrr Body Diode Reverse Recovery Charge IF=-11A, dI/dt=100A/µs 16 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev9: Nov. 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4433

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 25
-10V
-5V VDS=-5V
20
-6V
125°C
20
15
-ID (A)

-ID(A)
-4.5V
10
10
25°C
VGS=-4V 5

0 0
0 1 2 3 4 5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

40 1.6

VGS=-5V VGS=-10V
Normalized On-Resistance

30 ID=-10A
1.4
RDS(ON) (mΩ )

VGS=-20V
VGS=-10V
20 1.2 ID=-11A
VGS=-5V
ID=-5A
10 1

VGS=-20V
0 0.8
0 5 10 15 20 25 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

1.0E+01
50
ID=-11A
1.0E+00
40
1.0E-01
125°C
RDS(ON) (mΩ )

30 1.0E-02
-IS (A)

125°C 1.0E-03
20
1.0E-04
25°C
10 1.0E-05
25°C

1.0E-06
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0 5 10 15 20
-VSD (Volts)
-VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4433

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2500
VDS=-15V
Ciss
ID=-11A
8 2000

Capacitance (pF)
-VGS (Volts)

6 1500

4 1000
Coss Crss
2 500

0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000
100.0

RDS(ON) 10µs
100µs TJ(Max)=150°C
limited TA=25°C
1ms
10.0
100
-ID (Amps)

10ms
Power (W)

0.1s

1.0 1s
10
TJ(Max)=150°C 10s
TA=25°C
DC
0.1
0.1 1 10 100
1
-VDS (Volts) 0.00001 0.001 0.1 10 1000
Figure 9: Maximum Forward Biased Safe Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA
Thermal Resistance

RθJA=75°C/W
1

PD
0.1

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4433

G ate C harge Test C ircuit & W aveform

Vgs
Qg
- -10V
VDC
-
+ V ds Q gs Q gd
VDC
+
DUT
V gs

Ig

C harge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr td(off) tf
Vgs
-
Vgs DUT VDC
Vdd
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L E AR= 1/2 LIAR
Vds

Id Vds
- BV
Vgs
Vgs VDC
Vdd
Rg
+ Id
I
DUT
Vgs Vgs

Diode Recovery Test Circuit & W aveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC

Alpha & Omega Semiconductor, Ltd. www.aosmd.com