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In the class, we derived I-V characteristics for a 1D ballistic MOSFET in the Boltzmann limit. Using the
derived result we were able to explain only the sub-threshold behavior.
a) Re-derive the IDS(VGS, VDS) result considering Fermi-Dirac distribution of electrons in the source
and drain.
b) Assuming, threshold voltage VT = 0.4 V, draw the IDS-VGS (IDS in linear as well as log-scale, VDS
= 1V) and IDS-VDS characteristics of the transistor. Assume VGS and VDS vary from 0-1V.
c) Look online for a paper reporting 1D Ballistic transistor (either theoretical or experimental
paper). Compare your calculations (current levels etc.) to the results given in paper (Give
reference and comparison plots) ?
Consider a 1D semiconductor with potential variation along the length shown in figure below:
1
d) Plot actual T(E) in log-scale for E<V0 and compare the result with T(E) calculated using WKB
approximation.
e) Numerically calculate the tunneling current at low temperature (assuming f(E) as step function)
through the barrier using actual T(E) and WKB T(E). Compare the answers.
f) Repeat the calculation in (e) at 300K (using the corresponding f(E)). Compare your answer with
tunneling currents calculated in part (e).
In the class, we calculated electron flux along +x direction (flux with kx > 0), from a 2D semiconductor whose
conduction band is filled till Fermi-level Ef. The calculation was done assuming low temperature (assuming f(E) as
step function).
(a) Repeat the flux calculation at any temperature T ?
(b) Do you expect the flux to increase or decrease with increase in temperature ? Support your answer with
reasoning.