FDB14N30 300V N-Channel MOSFET

February 2007

UniFET TM

FDB14N30
300V N-Channel MOSFET

Features Description
• 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V These N-Channel enhancement mode power field effect
• Low gate charge ( typical 18 nC) transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low Crss ( typical 17 pF)
• Fast switching This advanced technology has been especially tailored to
• 100% avalanche tested minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
• Improved dv/dt capability
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.

D D

D2-PAK
G S FDB Series S

Absolute Maximum Ratings

Symbol Parameter FDB14N30 Unit
VDSS Drain-Source Voltage 300 V
ID Drain Current - Continuous (TC = 25°C) 14 A
- Continuous (TC = 100°C) 8.4 A
IDM Drain Current - Pulsed (Note 1) 56 A
VGSS Gate-Source voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 330 mJ
IAR Avalanche Current (Note 1) 14 A
EAR Repetitive Avalanche Energy (Note 1) 14 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 140 W
- Derate above 25°C 1.12 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temperature for Soldering Purpose,
300 °C
1/8” from Case for 5 Seconds

Thermal Characteristics
Symbol Parameter Min. Max. Unit
RθJC Thermal Resistance, Junction-to-Case -- 0.89 °C/W
RθJA* Thermal Resistance, Junction-to-Ambient* -- 40 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDB14N30 Rev. A
 FDB14N30 300V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDB14N30 FDB14N30TM D2-PAK 330mm 24mm 800

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 300 -- -- V
ΔBVDSS Breakdown Voltage Temperature
ID = 250μA, Referenced to 25°C -- 0.3 -- V/°C
/ ΔTJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 300V, VGS = 0V -- -- 1 μA
VDS = 240V, TC = 125°C -- -- 10 μA
IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10V, ID = 7A -- 0.24 0.29 Ω
On-Resistance
gFS Forward Transconductance VDS = 40V, ID = 7A (Note 4) -- 10.5 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, -- 815 1060 pF
f = 1.0MHz
Coss Output Capacitance -- 150 195 pF
Crss Reverse Transfer Capacitance -- 17 25 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 150V, ID = 14A -- 20 50 ns
tr Turn-On Rise Time RG = 25Ω -- 105 120 ns
td(off) Turn-Off Delay Time -- 30 70 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 75 160 ns
Qg Total Gate Charge VDS = 240V, ID = 14A -- 18 25 nC
VGS = 10V
Qgs Gate-Source Charge -- 4.5 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 8 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 14 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 56 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 14A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0V, IS = 14A -- 235 -- ns
Qrr Reverse Recovery Charge dIF/dt =100A/μs (Note 4)
-- 1.6 -- μC

NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 2.8mH, IAS = 14A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 14A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

2 www.fairchildsemi.com
FDB14N30 Rev. A
 FDB14N30 300V N-Channel MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

2
10
VGS
2
10 Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V

ID, Drain Current [A]

ID, Drain Current [A]

1 6.0 V
10 Bottom : 5.5 V
1
10
o
150 C
0
10 o
25 C o
-55 C
* Notes :
* Notes : 1. VDS = 40V
1. 250μs Pulse Test 2. 250μs Pulse Test
-1
10 o 0
2. TC = 25 C 10
2 4 6 8 10 12

10
-1
10
0
10
1
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue

1.3
2
RDS(ON) [Ω], Drain-Source On-Resistance

1.2 10

1.1
IDR, Reverse Drain Current [A]

1.0

0.9 VGS = 10V

0.8

0.7
1
10
0.6

0.5 VGS = 20V

150oC
0.4
o
0.3 25 C * Notes :
1. VGS = 0V
o
0.2 * Note : TJ = 25 C 2. 250μs Pulse Test
0
0.1 10
0 5 10 15 20 25 30 35 40 45 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

2000
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10 VDS = 60V
VGS, Gate-Source Voltage [V]

Coss
VDS = 150V
Capacitances [pF]

8 VDS = 240V
Ciss
1000 6

4
* Note :
1. VGS = 0 V
Crss 2. f = 1 MHz
2

* Note : ID = 14A
0 0
-1 0 1
10 10 10 0 2 4 6 8 10 12 14 16 18 20

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

3 www.fairchildsemi.com
FDB14N30 Rev. A
 FDB14N30 300V N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0
0.9 * Notes :
1. VGS = 0 V
2. ID = 250μA * Notes :
0.5
1. VGS = 10 V
2. ID = 7 A
0.8
-100 -50 0 50 100 150 200 0.0
-100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C] o
TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

15
2
10
10 μs
100 μs
ID, Drain Current [A]

1 ms
ID, Drain Current [A]

1
10 10
10 ms
100 ms
Operation in This Area DC
0 is Limited by R DS(on)
10

-1 * Notes :
10 o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-2
10 0
10
0
10
1
10
2 25 50 75 100 125 150
o
VDS, Drain-Source Voltage [V] TC, Case Temperature [ C]

Figure 11. Transient Thermal Response Curve

PDM
t1
10
0 t2

D = 0 .5
ZθJC(t), Thermal Response

0 .2
PDM
-1
10 0 .1
t1
0 .0 5 t2
0 .0 2
0 .0 1 * N o te s :
o
1 . Z θ J C ( t) = 0 .8 9 C /W M a x .
-2 2 . D u ty F a c to r , D = t 1 /t 2
10
s in g le p u ls e 3 . T J M - T C = P D M * Z θ J C ( t)

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]

4 www.fairchildsemi.com
FDB14N30 Rev. A
 FDB14N30 300V N-Channel MOSFET
Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

5 www.fairchildsemi.com
FDB14N30 Rev. A
 FDB14N30 300V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

6 www.fairchildsemi.com
FDB14N30 Rev. A
 FDB14N30 300V N-Channel MOSFET
Mechanical Dimensions

D2-PAK

7 www.fairchildsemi.com
FDB14N30 Rev. A
 TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an
exhaustive list of all such trademarks.
® ®
ACEx HiSeC™ Programmable Active Droop™ TinyLogic
®
Across the board. Around the world.™ i-Lo™ QFET TINYOPTO™
ActiveArray™ ImpliedDisconnect™ QS™ TinyPower™
Bottomless™ IntelliMAX™ QT Optoelectronics™ TinyWire™
Build it Now™ ISOPLANAR™ Quiet Series™ TruTranslation™
CoolFET™ MICROCOUPLER™ RapidConfigure™ μSerDes™
®
CROSSVOLT™ MicroPak™ RapidConnect™ UHC
CTL™ MICROWIRE™ ScalarPump™ UniFET™
Current Transfer Logic™ MSX™ SMART START™ VCX™
®
DOME™ MSXPro™ SPM Wire™
2
E CMOS™ OCX™ STEALTH™
®
EcoSPARK OCXPro™ SuperFET™
EnSigna™ OPTOLOGIC
®
SuperSOT™-3
FACT Quiet Series™ OPTOPLANAR
®
SuperSOT™-6
®
FACT PACMAN™ SuperSOT™-8
®
FAST POP™ SyncFET™
FASTr™ Power220
®
TCM™
®
FPS™ Power247
®
The Power Franchise
®
FRFET PowerEdge™ ™
GlobalOptoisolator™ PowerSaver™ TinyBoost™
GTO™ PowerTrench
®
TinyBuck™

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,
which, (a) are intended for surgical implant into the body or device, or system whose failure to perform can be
(b) support or sustain life, and (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status Definition
Formative or In Design This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
First Production This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
Full Production This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
Not In Production This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.

Rev. I24

© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com