AUTOMOTIVE GRADE

Features
l Advanced Planar Technology
AUIRF4905S/L
l P-Channel MOSFET HEXFET® Power MOSFET
l Low On-Resistance D V(BR)DSS -55V
l 150°C Operating Temperature
l Fast Switching RDS(on) max. 20m
l Repetitive Avalanche Allowed up to G
ID (Silicon Limited) -70A
Tjmax
l Lead-Free, RoHS Compliant S ID (Package Limited) -42A
l Automotive Qualified *
Description D
D
Specifically designed for Automotive applica-
tions, this cellular design of HEXFET® Power
MOSFETs utilizes the latest processing tech- S
niques to achieve low on-resistance per silicon D S
G D
area. This benefit combined with the fast switch- G
D2Pak TO-262
ing speed and ruggedized device design that
AUIRF4905S AUIRF4905L
HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient
and reliable device for use in Automotive and a G D S
wide variety of other applications.
Gate Drain Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) -70
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) -44 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) -42
IDM Pulsed Drain Current c -280
PD @TC = 25°C Power Dissipation 170 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) d 140 mJ
EAS (tested ) Single Pulse Avalanche Energy Tested Value h 790
IAR Avalanche Current c See Fig. 12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy c mJ
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case ) 300
Mounting Torque, 6-32 or M3 screw i y y
10 lbf in (1.1N m)
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case j ––– 0.75 °C/W
RJA Junction-to-Ambient (PCB mount) ij ––– 40
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250μA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 20 m VGS = -10V, ID =-42A f
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250μA
gfs Forward Transconductance 19 ––– ––– S VDS = -25V, ID = -42A g
IDSS Drain-to-Source Leakage Current ––– ––– -25 μA VDS = -55V, VGS = 0V
––– ––– -250 VDS = -44V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge ––– 120 180 ID = -42A
Qgs Gate-to-Source Charge ––– 32 ––– nC VDS = -44V
Qgd Gate-to-Drain ("Miller") Charge ––– 53 ––– VGS = -10V e
td(on) Turn-On Delay Time ––– 20 ––– VDD = -28V
tr Rise Time ––– 99 ––– ns ID = -42A
td(off) Turn-Off Delay Time ––– 51 ––– RG = 2.6 
tf Fall Time ––– 64 ––– VGS = -10V e
LD Internal Drain Inductance ––– 4.5 ––– Between lead, D

nH 6mm (0.25in.)
LS Internal Source Inductance ––– 7.5 ––– from package G

and center of die contact S

Ciss Input Capacitance ––– 3500 ––– VGS = 0V

Coss Output Capacitance ––– 1250 ––– VDS = -25V
Crss Reverse Transfer Capacitance ––– 450 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 4620 ––– VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 940 ––– VGS = 0V, VDS = -44V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 1530 ––– VGS = 0V, VDS = 0V to -44V f
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– -42 MOSFET symbol D

(Body Diode) A showing the

ISM Pulsed Source Current ––– ––– -280 integral reverse G

(Body Diode) c p-n junction diode.

f
S

VSD Diode Forward Voltage ––– ––– -1.3 V TJ = 25°C, IS = -42A, VGS = 0V
trr Reverse Recovery Time ––– 61 92 ns TJ = 25°C, IF = -42A, VDD = -28V
Qrr Reverse Recovery Charge ––– 150 220 nC di/dt = 100A/μs e
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
max. junction temperature. (See fig. 11). avalanche performance.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.16mH † This value determined from sample failure population. 100%
RG = 25, IAS = -42A, VGS =-10V. Part not tested to this value in production.
recommended for use above this value. ‡ This is applied to D2Pak, when mounted on 1" square PCB (FR-
ƒ Pulse width  1.0ms; duty cycle  2%. 4 or G-10 Material). For recommended footprint and soldering
„ Coss eff. is a fixed capacitance that gives the techniques refer to application note #AN-994.
same charging time as Coss while VDS is rising ˆ R is measured at T approximately 90°C
 J
from 0 to 80% VDSS .

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†
Qualification Information
Automotive
(per AEC-Q101)

Qualification Level Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.

TO-262 N/A
Moisture Sensitivity Level
D2Pak MSL1
Machine Model Class M4 (+/- 425V)††
AEC-Q101-002
Human Body Model Class H2 (+/- 4000V)††
ESD
AEC-Q101-001
Charged Device Model Class C5 (+/- 1125V)††
AEC-Q101-005
RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/

†† Highest passing voltage.

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1000 1000
VGS VGS
TOP -15V TOP -15V
-10V -10V
-ID, Drain-to-Source Current (A)

-ID, Drain-to-Source Current (A)

-8.0V -8.0V
-7.0V -7.0V
-6.0V -6.0V
-5.5V -5.5V
100 -5.0V 100 -5.0V
BOTTOM -4.5V BOTTOM -4.5V

10 10
-4.5V

-4.5V
 60μs PULSE WIDTH  60μs PULSE WIDTH
Tj = 25°C Tj = 150°C
1 1
0.1 1 10 100 1000 0.1 1 10 100 1000

-VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000.0 40
TJ = 25°C TJ = 25°C
Gfs, Forward Transconductance (S)
-ID, Drain-to-Source Current)

100.0 TJ = 150°C
30

TJ = 150°C
10.0
20

1.0
10
VDS = -25V
VDS = -10V
 60μs PULSE WIDTH
0.1 380μs PULSE WIDTH
3 4 5 6 7 8 9 10 11 12 13 14 0
0 20 40 60 80
-VGS, Gate-to-Source Voltage (V)
-ID, Drain-to-Source Current (A)

Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance

Vs. Drain Current

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7000 20
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED ID= -42A

-VGS, Gate-to-Source Voltage (V)

6000 Crss = Cgd VDS= -44V
16 VDS= -28V
Coss = Cds + Cgd
5000 VDS= -11V
C, Capacitance (pF)

Ciss 12
4000

3000 8
Coss
2000
4
1000 Crss

0
0
0 40 80 120 160 200
1 10 100
QG Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000.0 1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
-ID, Drain-to-Source Current (A)
-ISD , Reverse Drain Current (A)

100.0

TJ = 150°C 100 100μsec

1msec

10.0
10msec

10 LIMITED BY PACKAGE
TJ = 25°C
1.0 DC
Tc = 25°C
Tj = 150°C
VGS = 0V Single Pulse
0.1 1
0.0 0.4 0.8 1.2 1.6 2.0 0 1 10 100
-VSD, Source-to-Drain Voltage (V) -VDS , Drain-toSource Voltage (V)

nce Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area
Forward Voltage

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80 2.0
ID = -42A

RDS(on) , Drain-to-Source On Resistance

LIMITED BY PACKAGE
VGS = -10V

60
-ID , Drain Current (A)

1.5

(Normalized)
40

1.0
20

0
0.5
25 50 75 100 125 150
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC , Case Temperature (°C)
TJ , Junction Temperature (°C)

Fig 9. Maximum Drain Current Vs. Fig 10. Normalized On-Resistance

Case Temperature Vs. Temperature

D = 0.50
Thermal Response ( ZthJC )

0.20
0.1
0.10
R1 R2 R3
0.05 R1 R2 R3 Ri (°C/W) i (sec)
J
J
C

0.1165 0.000068
0.02 1 2 3
1 2 3 0.3734 0.002347
0.01
0.01
Ci= iRi 0.2608 0.014811
Ci iRi

Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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VDS L

600

EAS, Single Pulse Avalanche Energy (mJ)

RG D.U.T I D
VDD
500 TOP -17A
IAS A
DRIVER -30A
-20V
tp 0.01 BOTTOM -42A
400

300
15V

200
Fig 12a. Unclamped Inductive Test Circuit
I AS 100

0
25 50 75 100 125 150

Starting TJ , Junction Temperature (°C)

tp
V(BR)DSS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current

QG

10V 3.6
QGS QGD
-VGS(th) Gate threshold Voltage (V)

VG
3.2

Charge
ID = -250μA
Fig 13a. Basic Gate Charge Waveform 2.8
Current Regulator
Same Type as D.U.T.

50K
2.4
12V .2F
.3F
-

D.U.T. +VDS
2.0
VGS -75 -50 -25 0 25 50 75 100 125 150
-3mA TJ , Temperature ( °C )

IG ID
Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature

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1000
Duty Cycle = Single Pulse

100 Allowed avalanche Current vs

Avalanche Current (A)

0.01 avalanche pulsewidth, tav

assuming Tj = 25°C due to
0.05 avalanche losses. Note: In no
10 0.10 case should Tj be allowed to
exceed Tjmax

0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

160 Notes on Repetitive Avalanche Curves , Figures 15, 16:

TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 1% Duty Cycle 1. Avalanche failures assumption:
ID = -42A Purely a thermal phenomenon and failure occurs at a
EAR , Avalanche Energy (mJ)

120 temperature far in excess of Tjmax. This is validated for

every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
80 3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
40
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
0
tav = Average time in avalanche.
25 50 75 100 125 150 D = Duty cycle in avalanche = tav ·f
Starting TJ , Junction Temperature (°C) ZthJC(D, tav ) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Fig 16. Maximum Avalanche Energy Iav = 2DT/ [1.3·BV·Zth]
Vs. Temperature EAS (AR) = PD (ave)·tav

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Driver Gate Drive

P.W.
D.U.T** + P.W.
Period D=
Period

*
VGS=10V
ƒ Circuit Layout Considerations
 Low Stray Inductance
Ground Plane
- Low Leakage Inductance
D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG dv/dt controlled by RG V DD Re-Applied

Driver same type as D.U.T. + Voltage Body Diode Forward Drop
I SD controlled by Duty Factor "D" - Inductor Curent
D.U.T. - Device Under Test

Ripple  5% ISD

** Reverse Polarity of D.U.T for P-Channel * VGS = 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for P-Channel
HEXFET® Power MOSFETs

RD
V DS

VGS
D.U.T.
RG -
+ V DD

VGS
Pulse Width µs
Duty Factor 

Fig 18a. Switching Time Test Circuit

td(on) tr t d(off) tf
VGS
10%

90%
VDS

Fig 18b. Switching Time Waveforms

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D2Pak Package Outline
(Dimensions are shown in millimeters (inches))

D2Pak Part Marking Information

Part Number AUIRF4905S

Date Code
Y= Year
IR Logo
YWWA WW= Work Week
A= Automotive, Lead Free

XX or XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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TO-262 Package Outline
Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

Part Number AUIRF4905L

Date Code
Y= Year
IR Logo
YWWA WW= Work Week
A= Automotive, LeadFree

XX or XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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D2Pak Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

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Ordering Information
Base part Package Type Standard Pack Complete Part Number
number
Form Quantity
AUIRF4905L TO-262 Tube 50 AUIRF4905L
AUIRF4905S D2Pak Tube 50 AUIRF4905S
Tape and Reel Left 800 AUIRF4905STRL
Tape and Reel Right 800 AUIRF4905STRR

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IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduc-
tion of this information with alterations is an unfair and deceptive business practice. IR is not responsible
or liable for such altered documentation. Information of third parties may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application
in which the failure of the IR product could create a situation where personal injury or death may occur. Should
Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall
indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distribu-
tors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.

Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of
Defense, are designed and manufactured to meet DLA military specifications required by certain military,
aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified
by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer’s own risk
and that they are solely responsible for compliance with all legal and regulatory requirements in connection
with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless
the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part
number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105

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