Electronic Devices and Circuits 9.

Assertion (A): A p-n junction has

D. none of the above C. IEn >> IEp high resistance in reverse direction.
- Section 1 Reason (R): When a reverse bias is
Answer: Option A
1. At room temperature the current in Explanation: D. either (a) or (c) applied to p-n junction, the width of
an intrinsic semiconductor is due to Germanium is rarely used. depletion layer increases.
Answer: Option B
A. holes Explanation: Both A and R are true and
4. In which of these is reverse recovery A.
Emitter is p-type in p-n-p transistor. R is correct explanation of A
time nearly zero? Therefore holes are majority carriers.
B. electrons
A. Zener diode Both A and R are true but R
7. In an n channel JFET, the gate is B. is not a correct explanation
C. ions
B. A. of A
Tunnel diode n type
D. holes and electrons
C. A is true but R is false
C. Schottky diode B. p type
Answer: Option D
Explanation: D. A is false but R is true
Intrinsic material has equal number D. PIN diode C. either n or p
of holes and electrons. Answer: Option A
Answer: Option C
D. partially n & partially p Explanation:
Explanation:
The increase in reverse resistance is
In schottky diode there is no charge Answer: Option B
2. Work function is the maximum due to widening of depletion layer.
storage and hence almost zero Explanation:
energy required by the fastest reverse recovery time. Since channel is n type gate must 10. In the circuit of figure the function of resistor
electron at 0 K to escape from the
be p type.
metal surface. 5. A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is
A. True A. 100 8. The amount of photoelectric
emission current depends on
B. False B. 99 frequency of incident
A.
Answer: Option B radiation
Explanation: C. 1.01 A. to limit the current and to protect LED
Work function is the minimum energy intensity of incident
B.
required by the fastest electron at 0 D. 0.99 radiation
B. to limit the voltage and to protect LED
K to escape from the metal surface.
Answer: Option A both frequency and intensity
Explanation: C. C. to limit the current and protect LED ag
of incident radiation
3. The most commonly used
semiconductor material is D. none of the above D. none of the above.
A. silicon Current gain = 1 + β = 100. Answer: Option B Answer: Option C
6. In p-n-p transistor the current IE has two components Explanation:
viz. IEP due to injection of holes from p-region
Explanation: to n-region and IE due to
B. germanium injection of electrons from n-region to p-region. Then
Only the intensity of incident Resistance limits current and diode is reverse
radiation governs the amount of 11. At very high temperatures the extrinsic semi
A. IEp and IEn are almost equal
mixture of silicon and photoelectric emission. A. drive in diffusion of dopants and carrie
C.
germanium B. IEp >> IEn
 Ferrite is a low density material of Explanation:
B. band to band transition dominants over impurity
towards
ionization
positive terminal for composition with Fe2O3 x O, where x Addition of acceptor atom brings
D. 1 μs and towards negative is a bivalent metal, such as Cobart, Fermi level closer to valence band.
C. terminal
impurity ionization dominants over band to band for next 1 μs
transition Ni, Mn. These magnetic materials
Answer: Option A having very low loss of current and
D. band to band transition is balanced byExplanation:
impurity ionization used in high frequency circuit. 15. In an n-p-n transistor, the majority carriers in
Since electrons are negatively
Answer: Option B A. electrons
charged they will flow towards
Explanation: positive terminal. 14. In a p type material the Fermi level is
Covalent bonds are broken. 0.3 eV above valence band. The B. holes
13. Ferrite have concentration of acceptor atoms is
increased. The new position of Fermi C. both holes and electrons
12. When a voltage is applied to a A. low copper loss level is likely to be
semiconductor crystal then the free
electrons will flow. A. 0.5 eV above valence band D. either holes or electrons
B. low eddy current loss
A. towards positive terminal Answer: Option A
0.28 eV above valence Explanation:
C. low resistivity B.
band Emitter is n type and emits electrons which d
B. towards negative terminal 16. An LED has a rating of 2 V and 10 mA. It is u
higher specific gravity C. 0.1 eV above valence band
D.
either towards positive compared to iron
C. terminal or negative Answer: Option C D. below the valence band
terminal Explanation:
Answer: Option B
Answer: Option D
0 to 200 Ω
A. C. 200 Ω and above Explanation:

B. 200 - 400 Ω D. 400 Ω and above R= = 400Ω.

R must be at least 400Ω so that current in LED doe

18. A transistor has two p-n junctions. Answer: Option C

A. 1 The batteries should be connected Explanation:
17. The number of doped regions in PIN
diode is such that Emitter-base junction is forward
B. 2 biased and base collector junction is
both junctions are forward reverse biased.
A.
biased
C. 3
19. A silicon (PN) junction at a
both junctions are reverse temperature of 20°C has a reverse
D. 1 or 2 B.
biased saturation current of 10 pico Ampere.
Answer: Option B The reverse saturation current at
Explanation: one junction is forward 40°C for the same bias is
A PIN diode has p and n doped C. biased and the other is approximately.
regions separated by intrinsic layer. reverse biased
A. 30 pA

D. none of the above

 B. 40 pA A. 1/11 kΩ Both A and R are true and
A.
R is correct explanation of A
C. 50 pA B. 1/5 kΩ
Both A and R are true but R
D. 60 pA C. 5 kW B. is not a correct explanation
of A
Answer: Option B
Explanation: D. 11 kW
C. A is true but R is false 27 If ac for transistor is 0.98 then βac is
By increasing of temperature by Answer: Option A
10°C, Io become double so by . equal to
Explanation: D. A is false but R is true
increasing temperature 20°C, Input Resistance with feedback for A. 51
Io become 4 time than initial value... Answer: Option A
and it is 40 PA. Explanation: B. 49
current shunt, . Avalanche breakdown occurs at high
o reverse voltage.
20. In a bipolar transistor the barrier potential C. 47

A. 0 23. As compared to an ordinary

semiconductor diode, a Schottky 25. As compared to an ordinary semiconductor D.
diode,45
a Schottky diode
B. a total of 0.7 V diode A. Answer: Option B
has higher reverse saturation current
A. has lower cut in voltage Explanation:
C. 0.7 V across each depletion layer B. has higher reverse saturation current and higher cut in voltage
B. has higher cut in voltage
D. 0.35 V C. has higher reverse saturation current and lower cut in voltage
Answer: Option C lower reverse saturation .
C.
Explanation: current D. has lower reverse saturation current and lower cut in voltage
Since there are two p-n junctions, there are two depletion layers and 0.7 V across each layer.
Answer: Option C
21. Recombination produces new electron-hole pairs D. both (b) and (c) 28. Assertion (A): The conductivity
Explanation:
of p type semiconductor is higher
A. True Answer: Option A This is due to high electron concentration in metals.
than that of intrinsic semiconductor.
Explanation: 26. Crossover distortion behaviour is characteristic of
Reason (R): The addition of donor
B. False Cut in voltage in Schottky diode is A. class A O/P stage impurity creates additional energy
about 0.3 V as compared to 0.7 V in levels below conduction band.
Answer: Option B ordinary semiconductor diode.
Explanation: B. class B O/P stage Both A and R are true and
A.
Due to recombination the number of electron-hole pairs is reduced. R is correct explanation of A
C. class AB output stage
22. An amplifier without feedback has a 24. Assertion (A): When a high reverse Both A and R are true but R
voltage gain of 50, input resistance of voltage is applied to a p-n junction B. is not a correct explanation
D. common pulse O/P state
1 kΩ and output resistance of 2.5 kΩ. the diode breaks down.
of A
The input resistance of the current Reason (R): High reverse voltage Answer: Option B
shunt -ve feedback amplifier using causes Avalanche effect. Explanation:
C. A is true but R is false
the above amplifier with a feedback It is a characteristics of class B output stage as the amplifier is biased in cut-off region.
factor of 0.2 is In class B amplifier, two transistor are operated in such a way that one is amplify the half c
 D. A is false but R is true B. amplifier circuits C. the ratio v-i can be negative C. CD
Answer: Option B
Explanation: C. D.
both voltage regulator and amplifier circuit there are two p-n junctions D. BD
A refers to type semiconductor while Answer: Option B Answer: Option B
R refers to n type semiconductor. D. none of the above Explanation: Explanation:
Both A and R are correct but When reverse voltage equals 36.Small signal amplifier operation is in const
independent. Answer: Option A
Explanation: breakdown value it starts conducting Secondary emission is always decremental.
Zener diode is used only in voltage regulator and voltage does not increase
circuits. A. True
further.
29. In an n-p-n transistor biased for
operation in forward active region B. False
32. A particular green LED emits light of
emitter is positive with wavelength 5490, Å, the energy 34. In a bipolar transistor which current is
A. Answer: Option B
respect to base bandgap of the semiconductor largest
Explanation:
material used there is .. h = 6.6 x 10- A. collector current Sometimes it can be useful also.
collector is positive with
34
J sec.
B.
respect to base A. 2.26 eV B. base current 37. In a degenerate n type
semiconductor material, the Fermi
base is positive with respect level,
B. 1.98 eV C. emitter current
C. to emitter and collector is A. is in valence band
positive with respect to base
C. 1.17 eV base current or emitter
D.
current B. is in conduction band
D. none of the above
D. 0.74 eV Answer: Option C
Answer: Option C Explanation: is at the centre in between
Explanation: Answer: Option A C. valence and conduction
Explanation: Emitter current is larger, collector
In forward active mode emitter base current is slightly less than emitter bands
junction is forward biased and base From Plank
current and base current is very
collector junction is reverse biased. small. D. is very near valence band

equation joule Answer: Option B

30. An increase in temperature increases the width
to convert
of depletion
it intolayer.
electron volt it will be 35. Explanation:
The v-i characteristics of a FET is shown in figure. In which region is the device biased for
divided by 1.6 x 10 . -19 This is due to high level of doping.
A. True

B. False 33. In a zener diode 38. The types of carriers in a

semiconductor are
Answer: Option B the forward current is very
Explanation: A. A. 1
high
With increase in temperature width of depletion layer decreases.
31. A zener diode is used in A. AB B. 2
sharp breakdown occurs at
B.
A. voltage regulator circuit a certain reverse voltage
B. BC C. 3
 43. Work function of oxide coated It is used as amplifier when it
D. 4 B. 40.91, 0.58 μA cathode is much lower than that of operates in this region.
Answer: Option B tungsten cathode.
Explanation: C. 40.91, 0.58 μA
A. True
Holes and electrons.
D. 41.10, 0.39 μA
B. False
o
Answer: Option A
39. A potential of 7 V is applied to a Answer: Option A
Explanation:
silicon diode. A resistance of 1 K Explanation:
ohm is also in series with the diode. Therefore emission current from
The current is oxide coated cathode is more.
SICO = (1 + β).
A. 7 mA
44. The word enhancement mode is
B. 6.3 mA 51. = 42.53 associated with
ΔIC = (SICO).ΔICO
C. 0.7 mA = 42.53 x 19.9 nA A. tunnel diode
= 0.85 μA.
D. 0 B. MOSFET

Answer: Option B 4A periodic voltage has following value for C. JFET

Explanation: 2equal time intervals changing suddenly
. from one value to next... 0, 5, 10, 20, 50,
60, 50, 20, 10, 5, 0, -5, -10 etc. Then rms D. photo diode
value of the waveform is Answer: Option B
A. 31 V Explanation:
MOSFET may be depletion mode or
Assertion (A): The reverse saturation current enhancement mode.
40. B. in32a V
semiconductor diode is 4nA at 20°C and 32 nA at 50°C.
Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C rise in temperature.
A. Both A and R are true and R is correct
C. explanation
insufficient of A
data 45. In which region of a CE bipolar
transistor is collector current almost
B. Both A and R are true but R is not D.
a correct
noneexplanation
of these of A constant?
Answer: Option A A. Saturation region
C. A is true but R is false Explanation:
B. Active region
D. A is false but R is true
Answer: Option A C. Breakdown region
Explanation:
At 20°C, 4 nA, at 30°C, 8 nA, at 40°C, 16RMS
nA, value = 965
at 50°C, = 31.064 Volt.
32 nA. Both saturation and active
D.
region
41. Calculate the stability factor and change in IC from 25°C to 100°C for, β = 50, RB/ RE = 250, ΔIC0 = 19.9 nA for emitter bias configuration.
Answer: Option B
A. 42.53, 0.85 μA Explanation: