JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

DFNWB3×2-8L-I Plastic-Encapsulate Transistors-MOSFETS

CJZM718 N-ch MOSFET and PNP Transistor

V(BR)DSS/BVCEO RDS(on)MAX ID/IC DFNWB3×2-8L-I



0.7Ω@4.5V  

& 
20V 0.5A   

 
0.85Ω@2.5V 

  '  


-25V -3A  
 

/ 

FEATURE APPLICATION
 High DC current gain  Charging circuit
 Low Threshold  Other power management in portable equipments
 Small package DFNWB3x2-8L-I
 Including a CJP718 transistor and a CJ1012
MOSFET independently in a package

MARKING: Equivalent Circuit

C C S G
8 7 6 5

1 2 3 4

front back
C E B D

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit

PNP Transistor
VCBO Collector-Base Voltage -25 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -7.5 V
IC Collector Current -3 A
N-MOSFET
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ±6 V
ID Drain Current -Continuous 0.5 A
IDM Drain Current - Pulse 2 A
Power Dissipation, Temperature and Thermal Resistance
PD Power Dissipation 1 W
Thermal Resistance from Junction to Ambient (note1) 175 ℃/W
RθJA
Thermal Resistance from Junction to Ambient (note2) 110 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃
TL Lead Temperature 260 ℃

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MOSFET ELECTRICAL CHARACTERISTICS

PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-0.1mA, IE=0 -25 V
*
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA, IC=0 -7.5 V
Collector cut-off current ICBO VCB=-20V, IE=0 -25 nA
Emitter cut-off current IEBO VEB=-6V, IC=0 -25 nA
VCE=-2V, IC=-0.01A 300

* VCE=-2V, IC=-0.1A 300

DC current gain hFE
VCE=-2V, IC=-2A 150
VCE=-2V, IC=-6A 15
IC=-0.1A, IB=-10mA -30 mV
IC=-1A, IB=-20mA -220 mV
*
Collector-emitter saturation voltage VCE(sat) IC=-1.5A, IB=-50mA -250 mV
IC=-2.5A, IB=-150mA -350 mV
IC=-3.5A, IB=-350mA -380 mV
*
Base-emitter saturation voltage VBE(sat) IC=-3.5A, IB=-350mA -1.075 V
*
Base-emitter voltage VBE(on) VCE=-2V, IC=-3.5A -0.95 V
Transition frequency fT VCE=-10V, IC=-50mA, f=100MHz 150 MHz

N-ch MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
STATIC PARAMETERS
Drain-source breakdown voltage V (BR)DSS VGS =0V, ID=250µA 20 V
Zero gate voltage drain current IDSS VDS =16V, VGS = 0V 0.1 µA
Gate-body leakage current IGSS VGS =±4.5V, VDS = 0V ±1 µA
Gate threshold voltage VGS(th) VDS =VGS, ID =250µA 0.45 1.2 V
VGS =4.5V, ID =0.6A 0.7 Ω
Drain-source on-resistance RDS(on)
VGS =2.5V, ID =0.5A 0.85 Ω
Forward tranconductance gfs VDS =10V, ID =0.4A 0.5 S
Diode forward voltage VSD * IS=0.15A, VGS = 0V 1.2 V
DYNAMIC PARAMETERS (note 3)
Input Capacitance Ciss 100 pF
Output Capacitance Coss VDS =16V, VGS =0V, f =1MHz 16 pF
Reverse Transfer Capacitance Crss 12 pF
SWITCHING PARAMETERS (note 3)
Turn-on delay time td(on) 5 ns
Turn-on rise time tr VDD=10V, VGEN=4.5V, RG=10Ω, 5 ns
Turn-off delay time td(off) RL=47Ω, ID=0.2A 25 ns
Turn-off fall time tf 11 ns
Total Gate Charge Qg 750 nC
VDS =10V, VGS =4.5V,
Gate-Source Charge Qgs 75 nC
ID =0.25A
Gate-Drain Charge Qgd 225 nC

Note: 1. When mounted on a minimum pad.

2. When mounted on 1 in2 of 2oz copper board.
3. These parameters have no way to verify.
* Pulse test: pulse width≤300μs, duty cycle≤ 2%

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PNP Transistor

Static Characteristic hFE —— IC

-0.35 3000

COMMON VCE= -2V

-900uA
EMITTER
-0.30
-810uA Ta=25℃
1000
(A)

o
Ta=100 C
-720uA

hFE
-0.25
IC

-630uA
COLLECTOR CURRENT

DC CURRENT GAIN
-0.20 -540uA
o
-450uA Ta=25 C
-0.15
-360uA 100

-270uA
-0.10
-180uA

-0.05
IB=-90uA

-0.00 10
-0 -1 -2 -3 -4 -5 -6 -0.01 -0.1 -1 -6
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

IC —— VBE
VBEsat —— IC
-6 -1.4

VCE=-2V β=10

-1.2
BASE-EMITTER SATURATION

-1
IC (A)

VOLTAGE VBEsat (V)

-1.0
COLLECTOR CURRENT

o
Ta=100 C Ta=25℃
-0.1
o -0.8
Ta=25 C

-0.6

-0.01 Ta=100℃

-0.4

-1E-3 -0.2
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1E-3 -0.01 -0.1 -1 -6
BASE-EMITTER VOLTAGE VBE(V)
COLLECTOR CURRENT IC (A)

VCEsat —— IC VCEsat —— IC
-3
-3
β=50

-1
COLLECTOR-EMITTER SATURATION

COLLECTOR-EMITTER SATURATION

-1
VOLTAGE VCEsat (V)

VOLTAGE VCEsat (V)

-0.1

β=50

-0.1 Ta=100℃

-0.01 Ta=25℃

β=10

Ta=25℃
-1E-3 -0.01
-1E-3 -0.01 -0.1 -1 -6 -1E-3 -0.01 -0.1 -1 -6
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)

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PNP Transistor

Cob / Cib —— VCB / VEB

fT —— IC
300 1000

f=1MHz
IE=0 / IC=0
o
Ta=25 C
(MHz)

250
fT

(pF)
200
Cib
TRANSITION FREQUENCY

C
CAPACITANCE
150 100

100
Cob

50
VCE=-10V
o
Ta=25 C
0 10
-0 -20 -40 -60 -80 -100 -0.1 -1 -10
COLLECTOR CURRENT IC (mA) REVERSE BIAS VOLTAGE V (V)

Pc —— Ta
1.2

1.0
COLLECTOR POWER DISSIPATION

0.8
Pc (W)

0.6

0.4

0.2

0.0
0 25 50 75 100 125 150

AMBIENT TEMPERATURE Ta (℃ )

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N -channel Characteristics

Output Characteristics Transfer Characteristics

5 500
Ta=25℃ 5.5V
VDS=16V
Pulsed
Pulsed
4.5V
4 400
3.5V

(mA)
(A)
ID

ID
3 300
DRAIN CURRENT

DRAIN CURRENT
2.5V
Ta=100℃

2 200

Ta=25℃

1 100

VGS=1.5V

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0

DRAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE VGS (V)

RDS(ON) —— ID RDS(ON) —— VGS

600 500

Ta=25℃ Ta=25℃
Pulsed Pulsed
500 450
(mΩ)
(mΩ)

400 400
RDS(ON)
RDS(ON)

VGS=2.5V
ON-RESISTANCE
ON-RESISTANCE

300 350

ID=0.6A

200 300
VGS=4.5V

100 250

0 200
100 200 300 400 500 600 700 800 0 2 4 6 8 10

DRAIN CURRENT ID (mA) GATE TO SOURCE VOLTAGE VGS (V)

IS —— VSD Threshold Voltage

500 1.00
Ta=25℃
Pulsed
0.95
100
(V)
IS (mA)

VTH

0.90
ID=250uA
THRESHOLD VOLTAGE
SOURCE CURRENT

10
0.85

0.80

0.75

0.1 0.70
0.4 0.6 0.8 1.0 1.2 25 50 75 100 125

SOURCE TO DRAIN VOLTAGE VSD (V) JUNCTION TEMPERATURE TJ (℃ )

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DFNWB3X2-8L-I Package Outline Dimensions

N4 N5

N1 N8

TOP VIEW BOTTOM VIEW

SIDE VIEW

DFNWB3X2-8L-I

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DFNWB3X2-8L Tape and Reel

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