IPB60R040C7

MOSFET
600VCoolMOSªC7PowerTransistor D²PAK

CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand tab
pioneeredbyInfineonTechnologies.

600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.
2
1
The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm².
3

Features
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•IncreasedMOSFETdv/dtruggednessto120V/ns Drain
•IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg Pin 2, Tab
•BestinclassRDS(on)/package
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
Gate
andJESD22) Pin 1

Source
Benefits Pin 3

•IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe
application
•Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
•Enablinghighersystemefficiencybylowerswitchinglosses
•Increasedpowerdensitysolutionsduetosmallerpackages
•Suitableforapplicationssuchasserver,telecomandsolar
•Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto
lowEossandQg

Applications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 40 mΩ
Qg.typ 107 nC
ID,pulse 211 A
ID,continuous @ Tj<150°C 73 A
Eoss@400V 12.6 µJ
Body diode di/dt 450 A/µs

Type/OrderingCode Package Marking RelatedLinks

IPB60R040C7 PG-TO 263 60C7040 see Appendix A

Final Data Sheet 1 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
IPB60R040C7

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Final Data Sheet 2 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
IPB60R040C7

1Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 50 TC=25°C
Continuous drain current1) ID A
- - 32 TC=100°C
Pulsed drain current2) ID,pulse - - 211 A TC=25°C
Avalanche energy, single pulse EAS - - 249 mJ ID=7.4A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 1.24 mJ ID=7.4A; VDD=50V; see table 10
Avalanche current, single pulse IAS - - 7.4 A -
MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 227 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -55 - 150 °C -
Mounting torque - - - n.a. Ncm -
Continuous diode forward current IS - - 50 A TC=25°C
Diode pulse current 2)
IS,pulse - - 211 A TC=25°C
VDS=0...400V,ISD<=11.4A,Tj=25°C
Reverse diode dv/dt3) dv/dt - - 20 V/ns
see table 8
VDS=0...400V,ISD<=11.4A,Tj=25°C
Maximum diode commutation speed dif/dt - - 450 A/µs
see table 8
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min

1)
Limited by Tj max.
2)
Pulse width tp limited by Tj,max
3)
Identical low side and high side switch
Final Data Sheet 3 Rev.2.0,2016-03-01
 600VCoolMOSªC7PowerTransistor
IPB60R040C7

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 0.55 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction - ambient layer, 70µm thickness) copper area
RthJA - 35 45 °C/W
for SMD version for drain connection and cooling.
PCB is vertical without air stream
cooling.
Soldering temperature, wave- & reflow
Tsold - - 260 °C reflow MSL1
soldering allowed

Final Data Sheet 4 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
IPB60R040C7

3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=1.24mA
- - 1 VDS=600,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 - VDS=600,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
- 0.034 0.040 VGS=10V,ID=24.9A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 0.077 - VGS=10V,ID=24.9A,Tj=150°C
Gate resistance RG - 0.77 - Ω f=1MHz,opendrain

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 4340 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 85 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
Co(er) - 158 - pF VGS=0V,VDS=0...400V
related1)
Effective output capacitance, time
Co(tr) - 1640 - pF ID=constant,VGS=0V,VDS=0...400V
related2)
VDD=400V,VGS=13V,ID=24.9A,
Turn-on delay time td(on) - 18.5 - ns
RG=3.3Ω;seetable9
VDD=400V,VGS=13V,ID=24.9A,
Rise time tr - 11 - ns
RG=3.3Ω;seetable9
VDD=400V,VGS=13V,ID=24.9A,
Turn-off delay time td(off) - 81 - ns
RG=3.3Ω;seetable9
VDD=400V,VGS=13V,ID=24.9A,
Fall time tf - 3.2 - ns
RG=3.3Ω;seetable9

Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 22 - nC VDD=400V,ID=24.9A,VGS=0to10V
Gate to drain charge Qgd - 36 - nC VDD=400V,ID=24.9A,VGS=0to10V
Gate charge total Qg - 107 - nC VDD=400V,ID=24.9A,VGS=0to10V
Gate plateau voltage Vplateau - 5.0 - V VDD=400V,ID=24.9A,VGS=0to10V

1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet 5 Rev.2.0,2016-03-01
 600VCoolMOSªC7PowerTransistor
IPB60R040C7

Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=24.9A,Tj=25°C
VR=400V,IF=24.9A,diF/dt=100A/µs;
Reverse recovery time trr - 460 - ns
see table 8
VR=400V,IF=24.9A,diF/dt=100A/µs;
Reverse recovery charge Qrr - 9.2 - µC
see table 8
VR=400V,IF=24.9A,diF/dt=100A/µs;
Peak reverse recovery current Irrm - 40 - A
see table 8

Final Data Sheet 6 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
IPB60R040C7

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Safeoperatingarea
250 103

100 µs 10 µs 1 µs

1 ms
102
200 10 ms

DC
101

150
Ptot[W]

ID[A]
100

100

10-1

50
10-2

0 10-3
0 25 50 75 100 125 150 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 100

10 µs 1 µs
100 µs
102 1 ms
10 ms
0.5
DC
101

0.2
ZthJC[K/W]
ID[A]

0 -1
10 10
0.1

10-1 0.05

0.02
10-2 0.01

single pulse
10-3 10-2
100 101 102 103 10-5 10-4 10-3 10-2 10-1
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T

Final Data Sheet 7 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
IPB60R040C7

Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
350 250

20 V
300
10 V
200
8V 20 V
250 7V
10 V
8V 7V
150
200 6V
ID[A]

ID[A]
150
100 5.5 V
6V
100
5V
5.5 V 50
50
5V 4.5 V

4.5 V
0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
0.13 0.10
5.5 V 6.5 V

6V
0.09
0.12
7V
0.08

0.11
10 V 0.07
RDS(on)[Ω]

RDS(on)[Ω]

0.10 20 V 0.06
98%

0.05
0.09 typ

0.04

0.08
0.03

0.07 0.02
0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=24.9A;VGS=10V

Final Data Sheet 8 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
IPB60R040C7

Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
350 12

120 V

300
25 °C 10
400 V

250
8

200

VGS[V]
ID[A]

150 150 °C

4
100

2
50

0 0
0 2 4 6 8 10 12 0 20 40 60 80 100 120
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=24.9Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy
2
10 250

225

200

125 °C 175
101 25 °C

150
EAS[mJ]
IF[A]

125

100
0
10
75

50

25

10-1 0
0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 25 50 75 100 125 150
VSD[V] Tj[°C]
IF=f(VSD);parameter:Tj EAS=f(Tj);ID=7.4A;VDD=50V

Final Data Sheet 9 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
IPB60R040C7

Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances
700 105

680

104
660 Ciss

640

103
620
VBR(DSS)[V]

C[pF]
Coss
600
2
10

580

560
101

540
Crss

520 100
-60 -30 0 30 60 90 120 150 0 100 200 300 400
Tj[°C] VDS[V]
VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy
14

12

10

8
Eoss[µJ]

0
0 100 200 300 400
VDS[V]
Eoss=f(VDS)

Final Data Sheet 10 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
IPB60R040C7

5TestCircuits

Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform

V ,I
Rg1 VDS( peak)
VDS
VDS

VDS IF
trr
tF tS
Rg 2 dIF / dt
IF t
QF QS 10 %Irrm
IF dIrr / dt trr =tF +tS
Irrm Qrr = QF + QS
Rg1 = Rg 2

Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS
VGS 10%
VGS
td(on) tr td(off) tf

ton toff

Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DS
ID VDS

VDS VDS
ID

Final Data Sheet 11 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
IPB60R040C7

6PackageOutlines

Figure1OutlinePG-TO263,dimensionsinmm/inches

Final Data Sheet 12 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
IPB60R040C7

7AppendixA

Table11RelatedLinks
• IFXCoolMOSTMC7Webpage:www.infineon.com

• IFXCoolMOSTMC7applicationnote:www.infineon.com

• IFXCoolMOSTMC7simulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

Final Data Sheet 13 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
IPB60R040C7

RevisionHistory
IPB60R040C7

Revision:2016-03-01,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2016-03-01 Release of final version

TrademarksofInfineonTechnologiesAG

AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.

TrademarksupdatedAugust2015

OtherTrademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
erratum@infineon.com

Publishedby
InfineonTechnologiesAG
81726München,Germany
©2016InfineonTechnologiesAG
AllRightsReserved.

LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).

Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Final Data Sheet 14 Rev.2.0,2016-03-01

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Infineon:
IPB60R040C7ATMA1 IPB60R040CFD7ATMA1