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General Description
The HT27C020 chip family is a low-power, 2048K with respect to Spec. This eliminates the need for WAIT
(2,097,152) bits, +5V electrically one-time programma- states in high-performance microprocessor systems.
ble (OTP) read-only memories (EPROM). Organized The HT27C020 has separate Output Enable (OE) and
into 256K words with 8 bits per word, it features a fast Chip Enable (CE) controls which eliminate bus conten-
single address location programming, typically at 75ms tion issues.
per byte. Any byte can be accessed in less than 70ns
Block Diagram
R o w
X -D e c o d e r C e ll A r r a y
A d d re s s
V C C
C o lu m n V S S
A d d re s s Y -D e c o d e r Y - G a tin g
V P P
C E C E & O E & S A C K T
O E P G M & T E S T & D Q 0 ~ D Q 7
P G M C o n tr o l L o g ic O u tp u t B u ffe r
Pin Assignment
V P P 1 3 2 V C C
A 1 6 2 3 1 P G M
P G M
V C C
V P P
A 1 2
A 1 5
A 1 6
A 1 7
A 1 5 3 3 0 A 1 7
3 0
3 2
3 1
A 1 2 4 2 9 A 1 4
4
3
2
1
A 7 5 2 8 A 1 3
A 7 5 2 9 A 1 4
A 6 6 2 7 A 8 2 8
A 6 6 A 1 3
A 5 7 2 6 A 9 A 5 7 2 7 A 8
A 4 8 2 5 A 1 1 A 4 8 2 6 A 9
A 3 9
H T 2 7 C 0 2 0 2 5 A 1 1
A 3 9 2 4 O E
A 2 1 0 3 2 P L C C -A 2 4 O E
A 2 1 0 2 3 A 1 0
A 1 1 1 2 3 A 1 0
A 1 1 1 2 2 C E A 0 1 2 2 2 C E
A 0 1 2 2 1 D Q 7 D Q 0 1 3 2 1 D Q 7
D Q 0 1 3 2 0 D Q 6
1 4
1 5
1 6
1 7
1 8
1 9
2 0
D Q 1 1 4 1 9 D Q 5
V S S
D Q 1
D Q 2
D Q 3
D Q 4
D Q 5
D Q 6
D Q 2 1 5 1 8 D Q 4
V S S 1 6 1 7 D Q 3
H T 2 7 C 0 2 0
3 2 D IP -A /S O P -A
Pin Description
Pin Name I/O/P Description
A0~A17 I Address inputs
DQ0~DQ7 I/O Data inputs/outputs
CE I Chip enable
OE I Output enable
PGM I Program strobe
VPP P Program voltage supply
VCC ¾ Positive power supply
Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may
cause substantial damage to the device. Functional operation of this device at other conditions beyond those
listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil-
ity.
D.C. Characteristics
Test Conditions
Symbol Parameter Min. Typ. Max. Unit
VCC Conditions
Read operation
VOH Output High Level 5V IOH=-0.4mA 2.4 ¾ ¾ V
VOL Output Low Level 5V IOL=2.1mA ¾ ¾ 0.45 V
VIH Input High Level 5V ¾ 2.0 ¾ VCC+0.5 V
VIL Input Low Level 5V ¾ -0.3 ¾ 0.8 V
ILI Input Leakage Current 5V VIN=0 to 5.5V -5 ¾ 5 mA
ILO Output Leakage Current 5V VOUT=0 to 5.5V -10 ¾ 10 mA
ICC VCC Active Current 5V CE=VIL, f=5MHz, IOUT=0mA ¾ ¾ 30 mA
ISB1 Standby Current (CMOS) 5V CE=VCC±0.3V ¾ 1.0 10 mA
ISB2 Standby Current (TTL) 5V CE=VIH ¾ ¾ 1.0 mA
IPP VPP Read/Standby Current 5V CE=OE=VIL,, VPP=VCC ¾ ¾ 100 mA
Programming operation
VOH Output High Level 6V IOH=-0.4mA 2.4 ¾ ¾ V
VOL Output Low Level 6V IOL=2.1mA ¾ ¾ 0.45 V
VIH Input High Level 6V ¾ 0.7VCC ¾ VCC+0.5 V
VIL Input Low Level 6V ¾ -0.5 ¾ 0.8 V
ILI Input Load Current 6V VIN=VIL, VIH ¾ ¾ 5.0 mA
VH A9 Product ID Voltage 6V ¾ 11.5 ¾ 12.5 V
ICC VCC Supply Current 6V ¾ ¾ ¾ 40 mA
IPP VPP Supply Current 6V CE=VIL ¾ ¾ 10 mA
Capacitance
CIN Input Capacitance 5V VIN=0V ¾ 8 12 pF
COUT Output Capacitance 5V VOUT=0V ¾ 8 12 pF
CVPP VPP Capacitance 5V VPP=0V ¾ 18 25 pF
Test Conditions
Symbol Parameter Min. Typ. Max. Unit
VCC Conditions
Read operation
tACC Address to Output Delay 5V CE=OE=VIL ¾ ¾ 70 ns
tCE Chip Enable to Output Delay 5V OE=VIL ¾ ¾ 70 ns
tOE Output Enable to Output Delay 5V CE=VIL ¾ ¾ 30 ns
CE or OE High to Output Float,
tDF 5V ¾ ¾ ¾ 25 ns
Whichever Occurred First
Output Hold from Address, CE or
tOH 5V ¾ 0 ¾ ¾ ns
OE, Whichever Occurred First
Test Conditions
Symbol Parameter Min. Typ. Max. Unit
VCC Conditions
Programming operation
tAS Address Setup Time 6V ¾ 2 ¾ ¾ ms
tOES OE Setup Time 6V ¾ 2 ¾ ¾ ms
tDS Data Setup Time 6V ¾ 2 ¾ ¾ ms
tAH Address Hold Time 6V ¾ 0 ¾ ¾ ms
tDH Data Hold Time 6V ¾ 2 ¾ ¾ ms
Output Enable to Output Float
tDFP 6V ¾ 0 ¾ 130 ns
Delay
tVPS VPP Setup Time 6V ¾ 2 ¾ ¾ ms
tPW PGM Program Pulse Width 6V ¾ 30 75 105 ms
tVCS VCC Setup Time 6V ¾ 2 ¾ ¾ ms
tCES CE Setup Time 6V ¾ 2 ¾ ¾ ms
tOE Data Valid from OE 6V ¾ ¾ ¾ 150 ns
VPP Pulse Rise Time During
tPRT 6V ¾ 2 ¾ ¾ ms
Programming
2 .4 V
2 .0 V A C
A C D r iv in g M e a s u re m e n t
L e v e ls L e v e l
0 .8 V
0 .4 5 V
1 .3 V
(1 N 9 1 4 )
3 .3 k 9
O u tp u t P in
C L
Functional Description
Programming of the HT27C020 To activate this mode, the programming equipment must
When the HT27C020 is delivered, the chip has all force 12.0±0.5V on the address line A9 of the HT27C020.
2048K bits in the ²ONE², or HIGH state. ²ZEROs² are Two identifier bytes may then be sequenced from the de-
loaded into the HT27C020 through programming. vice outputs by toggling address line A0 from VIL to VIH,
when A1=VIH. All other address lines must be held at VIH
The programming mode is entered when 12.5±0.2V is ap- during Auto Product Identification mode.
plied to the VPP pin, OE is at VIH, and CE and PGM are
VIL. For programming, the data to be programmed is ap- Byte 0 (A0=VIL) represents the manufacturer code, and
plied with 8 bits in parallel to the data pins. byte 1 (A0=VIH), the device code. For HT27C020, these
two identifier bytes are given in the Operation mode truth
The programming flowchart in Figure 3 shows the fast table. When A1=VIL, the HT27C020 will read out the bi-
interactive programming algorithm. The interactive al- nary code of 7F, continuation code, to signify the unavail-
gorithm reduces programming time by using 30ms to ability of manufacturer ID codes.
105ms programming pulses and giving each address
only as many pulses as is necessary in order to reliably Read mode
program the data. After each pulse is applied to a given The HT27C020 has two control functions, both of which
address, the data in that address is verified. If the data must be logically satisfied in order to obtain data at out-
is not verified, additional pulses are given until it is veri- puts. Chip Enable (CE) is the power control and should
fied or until the maximum number of pulses is reached be used for device selection. Output Enable (OE) is the
while sequencing through each address of the output control and should be used to gate data to the
HT27C020. This process is repeated while sequencing output pins, independent of device selection. Assuming
through each address of the HT27C020. This part of that addresses are stable, address access time (tACC) is
the programming algorithm is done at VCC=6.0V to as- equal to the delay from CE to output (tCE). Data is avail-
sure that each EPROM bit is programmed to a suffi- able at the outputs (tOE) after the falling edge of OE, as-
ciently high threshold voltage. This ensures that all bits suming the CE has been LOW and addresses have
have sufficient margin. After the final address is com- been stable for at least tACC-tOE.
pleted, the entire EPROM memory is read at
VCC=VPP=5.25±0.25V to verify the entire memory. Standby mode
The HT27C020 has CMOS standby mode which re-
Program inhibit mode
duces the maximum VCC current to 10mA. It is placed in
Programming of multiple HT27C020 in parallel with differ- CMOS standby when CE is at V CC ±0.3V. The
ent data is also easily accomplished by using the Program HT27C020 also has a TTL-standby mode which re-
Inhibit Mode. Except for CE, all like inputs of the parallel duces the maximum VCC current to 1.0mA. It is placed
HT27C020 may be common. A TTL low-level program pulse in TTL-standby when CE is at VIH. When in standby
applied to an HT27C020 CE input with Vpp=12.5±0.2V, mode, the outputs are in a high-impedance state, inde-
PGM LOW, and OE HIGH will program that HT27C020. A pendent of the OE input.
high-level CE input inhibits the HT27C020 from being pro-
grammed. Two-line output control function
Program verify mode To accommodate multiple memory connections, a
Verification should be performed on the programmed two-line control function is provided to allow for:
bits to determine whether they were correctly pro- · Low memory power dissipation
grammed. The verification should be performed with OE · Assurance that output bus contention will not occur
and CE at VIL, PGM at VIH, and VPP at its programming It is recommended that CE be decoded and used as the
voltage. primary device-selection function, while OE be made a
common connection to the READ line from the system
Auto product identification
control bus. This assures that all deselected memory
The Auto Product Identification mode allows the reading devices are in their low-power standby mode and that
out of a binary code from an EPROM that will identify its the output pins are only active when data is desired from
manufacturer and the type. This mode is intended for a particular memory device.
programming to automatically match the device to be
programmed with its corresponding programming algo- System considerations
rithm. This mode is functional in the 25°C±5°C ambient During the switch between active and standby condi-
temperature range that is required when programming tions, transient current peaks are produced on the rising
the HT27C020. and falling edges of Chip Enable. The magnitude of
these transient current peaks is dependent on the out- effects of the printed circuit board traces on EPROM ar-
put capacitance loading of the device. At a minimum, a rays, a 4.7mF bulk electrolytic capacitor should be used
0.1mF ceramic capacitor (high frequency, low inherent between VCC and VPP for each eight devices. The lo-
inductance) should be used on each device between cation of the capacitor should be close to where the
VCC and VPP to minimize transient effects. In addition, power supply is connected to the array.
to overcome the voltage drop caused by the inductive
Manufacturer 0 1 0 0 0 1 1 1 0 0 1C
Device Type 1 1 0 0 0 0 0 0 1 0 02
0 0 0 1 1 1 1 1 1 1 7F
Continuation
1 0 0 1 1 1 1 1 1 1 7F
A d d re s s A d d r e s s V a lid
tC E
C E
tD F
tO E
O E
tA C C tO H
O u tp u t O u tp u t V a lid
H IG H Z
R e a d
P ro g ra m ( V e r ify )
V IH
A d d re s s A d d r e s s S ta b le
V IL
tA S tO E tA H
V IH
D a ta O u t
D a ta D a ta In V a lid
V IL
tD S tD H
6 .0 V
V C C tD F P
5 .0 V
tV C S
1 2 .5 V tV P S
V P P
5 .0 V
tP R T
V IH
C E
V IL
tC E S
V IH
P G M
V IL
tP W tO E S
V IH
O E
V IL
S T A R T
A d d r e s s = F ir s t L o c a tio n
V C C = 6 .0 V
V P P = 1 2 .5 V
X = 0
P ro g ra m o n e 7 5 m s P u ls e
In te r a c tiv e
S e c tio n
In c re m e n t X
Y e s
X = 2 5 ?
N o
F a il V e r ify
B y te ?
P a s s
N o L a s t F a il
In c re m e n t A d d re s s A d d re s s
Y e s
V C C = V P P = 5 .2 5 V
V e r ify
S e c tio n F a il
V e r ify a ll D e v ic e F a ile d
B y te s ?
P a s s
D e v ic e P a s s e d
N o te : E ith e r 1 0 5 m s o r 3 0 m s p u ls e .
Package Information
32-pin DIP (600mil) outline dimensions
3 2 1 7
1 1 6
D
a I
E F G
Dimensions in mil
Symbol
Min. Nom. Max.
A 1635 ¾ 1665
B 535 ¾ 555
C 145 ¾ 155
D 125 ¾ 145
E 16 ¾ 20
F 50 ¾ 70
G ¾ 100 ¾
H 595 ¾ 615
I 635 ¾ 670
a 0° ¾ 15°
3 2 1 7
A B
1 1 6
C '
G
D H
a
E F
Dimensions in mil
Symbol
Min. Nom. Max.
A 543 ¾ 557
B 440 ¾ 450
C 14 ¾ 20
C¢ ¾ ¾ 817
D 100 ¾ 112
E ¾ 50 ¾
F 4 ¾ ¾
G 32 ¾ 38
H 4 ¾ 12
a 0° ¾ 10°
A
B
4 1 3 2 2 9
5 2 8
D C
1 2 2 1
1 3 2 0
K
E F
J G
H
I
Dimensions in mil
Symbol
Min. Nom. Max.
A 485 ¾ 495
B 445 ¾ 455
C 585 ¾ 595
D 545 ¾ 555
E 105 ¾ 115
F ¾ ¾ 140
G 15 ¾ ¾
H ¾ 50 ¾
I 16 ¾ 22
J 24 ¾ 32
K 8 ¾ 12
a 0° ¾ 10°
D
T 2
A B C
T 1
SOP 32W
Symbol Description Dimensions in mm
A Reel Outer Diameter 330±1.0
B Reel Inner Diameter 100±0.1
13.0+0.5
C Spindle Hole Diameter
-0.2
D Key Slit Width 2.0±0.5
32.8+0.3
T1 Space Between Flange
-0.2
T2 Reel Thickness 38.2+0.2
PLCC 32
Symbol Description Dimensions in mm
A Reel Outer Diameter 330±1.0
B Reel Inner Diameter 62±1.5
13.0+0.5
C Spindle Hole Diameter
-0.2
D Key Slit Width 2.0±0.5
24.8+0.3
T1 Space Between Flange
-0.2
T2 Reel Thickness 30.2±0.2
P 0 P 1 t
D
F
W C B 0
K 1
D 1 P
K 2
A 0
SOP 32W
Symbol Description Dimensions in mm
32.0+0.3
W Carrier Tape Width
-0.1
P Cavity Pitch 16.0±0.1
E Perforation Position 1.75±0.1
F Cavity to Perforation (Width Direction) 14.2±0.1
D Perforation Diameter 1.55+0.1
D1 Cavity Hole Diameter 2.0+0.25
P0 Perforation Pitch 4.0±0.1
P1 Cavity to Perforation (Length Direction) 2.0±0.1
A0 Cavity Length 14.7±0.1
B0 Cavity Width 20.9±0.1
K1 Cavity Depth 3.0±0.1
K2 Cavity Depth 3.4±0.1
t Carrier Tape Thickness 0.35±0.05
C Cover Tape Width 25.5
P 0 P 1
D t
F
W
B 0
C
D 1 P
K 0
A 0
PLCC 32
Symbol Description Dimensions in mm
W Carrier Tape Width 24.0±0.3
P Cavity Pitch 18.0±0.1
E Perforation Position 1.75±0.1
F Cavity to Perforation (Width Direction) 11.5±0.1
D Perforation Diameter 1.5+0.1
1.55+1.0
D1 Cavity Hole Diameter
-0.05
P0 Perforation Pitch 4.0±0.1
P1 Cavity to Perforation (Length Direction) 2.0±0.1
A0 Cavity Length 13.1±0.1
B0 Cavity Width 15.5±0.1
K0 Cavity Depth 3.9±0.1
t Carrier Tape Thickness 0.30±0.05
C Cover Tape Width 21.3