SPP03N60C3, SPB03N60C3

Final data SPA03N60C3

Cool MOS™ Power Transistor VDS @ Tjmax 650 V

Feature RDS(on) 1.4 Ω
• New revolutionary high voltage technology ID 3.2 A
• Ultra low gate charge
• Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1

• Extreme
www.DataSheet4U.com dv/dt rated
• High peak current capability 1
2
3

• Improved transconductance P-TO220-3-31

• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Type Package Ordering Code Marking

SPP03N60C3 P-TO220-3-1 Q67040-S4401 03N60C3
SPB03N60C3 P-TO263-3-2 Q67040-S4391 03N60C3
SPA03N60C3 P-TO220-3-31 - 03N60C3

Maximum Ratings
Parameter Symbol Value Unit
SPP_B SPA
Continuous drain current ID A
TC = 25 °C 3.2 3.21)
TC = 100 °C 2 21)
Pulsed drain current, tp limited by Tjmax ID puls 9.6 9.6 A
Avalanche energy, single pulse EAS 100 100 mJ
ID=2.4A, VDD =50V

Avalanche energy, repetitive tAR limited by Tjmax2) EAR 0.2 0.2

ID=3.2A, VDD =50V

Avalanche current, repetitive tAR limited by Tjmax IAR 3.2 3.2 A

Gate source voltage static VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30
Power dissipation, TC = 25°C Ptot 38 29.7 W
Operating and storage temperature Tj , Tstg -55...+150 °C

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Final data SPA03N60C3

Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 50 V/ns
V DS = 480 V, I D = 3.2 A, Tj = 125 °C

Thermal Characteristics
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Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 3.3 K/W
Thermal resistance, junction - case, FullPAK RthJC_FP - - 4.1
Thermal resistance, junction - ambient, leaded RthJA - - 62
Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm 2 cooling area 3) - 35 -
Soldering temperature, Tsold - - 260 °C
1.6 mm (0.063 in.) from case for 10s 4)

Electrical Characteristics, at T j=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA 600 - - V
Drain-Source avalanche V(BR)DS V GS=0V, ID=3.2A - 700 -
breakdown voltage
Gate threshold voltage VGS(th) ID=135µA, VGS=VDS 2.1 3 3.9
Zero gate voltage drain current I DSS V DS=600V, VGS=0V, µA
Tj=25°C - 0.5 1
Tj=150°C - - 70
Gate-source leakage current I GSS V GS=30V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) V GS=10V, ID=2A Ω
Tj=25°C - 1.26 1.4
Tj=150°C - 3.8 -
Gate input resistance RG f=1MHz, open drain - 10 -

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Final data SPA03N60C3

Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Transconductance g fs V DS≥2*I D*RDS(on)max, - 3.4 - S
ID=2A

Input capacitance
www.DataSheet4U.com Ciss V GS=0V, V DS=25V, - 400 - pF
Output capacitance Coss f=1MHz - 150 -
Reverse transfer capacitance Crss - 5 -
Effective output capacitance, 5) Co(er) V GS=0V, - 12 -
energy related V DS=0V to 480V

Effective output capacitance, 6) Co(tr) - 26 -

time related
Turn-on delay time td(on) V DD=350V, V GS=0/10V, - 7 - ns
Rise time tr ID=3.2A, - 3 -
Turn-off delay time td(off) RG=20Ω - 64 100
Fall time tf - 12 20

Gate Charge Characteristics

Gate to source charge Qgs V DD=420V, ID=3.2A - 2 - nC
Gate to drain charge Qgd - 6 -
Gate charge total Qg V DD=420V, ID=3.2A, - 13 17
V GS=0 to 10V

Gate plateau voltage V(plateau) V DD=420V, ID=3.2A - 5.5 - V

1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Soldering temperature for TO-263: 220°C, reflow
5C
o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS.
6C
o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS.

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Final data SPA03N60C3

Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous IS TC=25°C - - 3.2 A
forward current
Inverse
www.DataSheet4U.com diode direct current, I SM - - 9.6
pulsed
Inverse diode forward voltage VSD VGS =0V, I F=IS - 1 1.2 V
Reverse recovery time t rr VR =420V, IF=IS , - 250 400 ns
Reverse recovery charge Q rr diF/dt=100A/µs - 1.8 - µC
Peak reverse recovery current I rrm - 15 - A
Peak rate of fall of reverse di rr/dt Tj=25°C - - - A/µs
recovery current

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
SPP_B SPA SPP_B SPA
Rth1 0.054 0.054 K/W Cth1 0.00005232 0.00005232 Ws/K
Rth2 0.103 0.103 Cth2 0.0002034 0.0002034
Rth3 0.178 0.178 Cth3 0.0002963 0.0002963
Rth4 0.757 0.356 Cth4 0.0009103 0.0009103
Rth5 0.682 0.655 Cth5 0.002084 0.004434
Rth6 0.202 2.535 Cth6 0.024 0.412

Tj E xternal H eatsink
R th1 R th,n T case
P tot (t)

C th1 C th2 C th,n

T am b

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Final data SPA03N60C3

1 Power dissipation 2 Power dissipation FullPAK

Ptot = f (TC) Ptot = f (TC)

SPP03N60C3
40 30
W
W

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32 24
22
28
20

Ptot
Ptot

24 18
16
20
14
16 12
10
12
8
8 6
4
4
2
0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

3 Safe operating area 4 Safe operating area FullPAK

ID = f ( V DS ) ID = f (VDS)
parameter : D = 0 , TC =25°C parameter: D = 0, TC = 25°C
1
10 10 1

A A

10 0 10 0
ID

ID

tp = 0.001 ms
tp = 0.001 ms tp = 0.01 ms
10 -1 tp = 0.01 ms 10 -1
tp = 0.1 ms
tp = 0.1 ms tp = 1 ms
tp = 1 ms tp = 10 ms
DC DC

10 -2 0 1 2 3
10 -2 0 1 2 3
10 10 10 V 10 10 10 10 V 10
VDS VDS

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Final data SPA03N60C3

5 Transient thermal impedance 6 Transient thermal impedance FullPAK

ZthJC = f (t p) ZthJC = f (t p)
parameter: D = tp/T parameter: D = tp/t
1
10 10 1

K/W K/W

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10 0 10 0
ZthJC

ZthJC
10 -1 10 -1
D = 0.5 D = 0.5
D = 0.2 D = 0.2
D = 0.1 D = 0.1
D = 0.05 D = 0.05
D = 0.02 D = 0.02
10 -2 10 -2 D = 0.01
D = 0.01
single pulse single pulse

10 -3 -7 -6 -5 -4 -3 -1
10 -3 -7 -6 -5 -4 -3 -2 -1 1
10 10 10 10 10 s 10 10 10 10 10 10 10 10 s 10
tp tp

7 Typ. output characteristic 8 Typ. output characteristic

ID = f (VDS); Tj=25°C ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS
11 6
A
20V
A
20V 7V
9
7V 6V
6.5V 5.5V
8
6V 5V
5.5V 4 4.5V
7
ID

ID

5V 4V
4.5V 3.5V
6
4V
3
5

4
2
3

2 1

0 0
0 4 8 12 16 V 24 0 4 8 12 16 V 24
VDS VDS

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Final data SPA03N60C3

9 Typ. drain-source on resistance 10 Drain-source on-state resistance

RDS(on)=f(ID) RDS(on) = f (Tj)
parameter: Tj=150°C, VGS parameter : ID = 2 A, VGS = 10 V
SPP03N60C3
10 8

Ω Ω
4V
4.5V
www.DataSheet4U.com 5V
8
5.5V 6

RDS(on)
RDS(on)

6V
7 6.5V
8V 5
20V
6
4
5

3
4

2 98%
3
typ
2 1

1 0
0 1 2 3 4 5 6 A 8 -60 -20 20 60 100 °C 180
ID Tj

11 Typ. transfer characteristics 12 Typ. gate charge

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS = f (Q Gate)
parameter: tp = 10 µs parameter: ID = 3.2 A pulsed
SPP03N60C3
11 16
A
25°C V

9
12
8
0,2 VDS max
VGS

7
ID

10 0,8 VDS max

150°C
6
8
5

4 6

3
4

2
2
1

0 0
0 2 4 6 8 10 12 14 16 V 20 0 2 4 6 8 10 12 14 16 nC 20
VGS Q Gate

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Final data SPA03N60C3

13 Forward characteristics of body diode 14 Typ. switching time

IF = f (VSD) t = f (ID), inductive load, T j=125°C
parameter: Tj , tp = 10 µs par.: V DS=380V, VGS=0/+13V, R G=20Ω
1 SPP03N60C3
10 100

ns
A
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80

70
10 0
IF

60

t
50

40 td(off)
-1
10 tf
Tj = 25 °C typ 30 td(on)
tr
Tj = 150 °C typ
20
Tj = 25 °C (98%)
Tj = 150 °C (98%) 10

10 -2 0
0 0.4 0.8 1.2 1.6 2 2.4 V 3 0 0.5 1 1.5 2 2.5 A 3.5
VSD ID

15 Typ. switching time 16 Typ. drain current slope

t = f (RG ), inductive load, Tj=125°C di/dt = f(R G), inductive load, Tj = 125°C
par.: VDS =380V, VGS=0/+13V, ID=3.2 A par.: V DS=380V, VGS=0/+13V, ID=3.2A
500 1500

ns A/µs

400 1200

350 1050
di/dt

300 900
t

250 td(off) 750

tf
200 td(on) 600
tr
150 450
di/dt(on)
100 300

50 150 di/dt(off)

0 0
0 20 40 60 80 100 120 140 160 Ω 200 0 40 80 120 160 Ω 220
RG RG

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Final data SPA03N60C3

17 Typ. drain source voltage slope 18 Typ. switching losses

dv/dt = f(RG), inductive load, Tj = 125°C E = f (ID), inductive load, Tj=125°C
par.: VDS =380V, VGS=0/+13V, ID=3.2A par.: V DS=380V, VGS=0/+13V, R G=20Ω
90 0.01
*) E on includes SDP06S60
V/ns mWs diode commutation losses.

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0.008
70

0.007
60
dv/dt

Eon*

E
0.006
50
0.005
40 Eoff
dv/dt(on)
0.004
30
0.003

20
0.002
dv/dt(off)
10 0.001

0 0
0 20 40 60 80 100 120 140 160 Ω 200 0 0.5 1 1.5 2 2.5 A 3.5
RG ID

19 Typ. switching losses 20 Avalanche SOA

E = f(RG), inductive load, Tj=125°C IAR = f (tAR)
par.: VDS =380V, VGS=0/+13V, ID=3.2A par.: Tj ≤ 150 °C
0.06 3.5
*) Eon includes SDP06S60
mWs diode commutation losses.
A

0.048
Eoff
T j(START)=25°C
0.042 2.5
IAR
E

0.036
2
Eon*
0.03

1.5 Tj(START)=125°C
0.024

0.018 1

0.012
0.5
0.006

0 0 -3 -2 -1 0 1 2 4
0 40 80 120 160 Ω 220 10 10 10 10 10 10 µs 10
RG t AR

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Final data SPA03N60C3

21 Avalanche energy 22 Drain-source breakdown voltage

EAS = f (Tj) V(BR)DSS = f (Tj)
par.: ID = 2.4 A, V DD = 50 V
SPP03N60C3
120 720

V
mJ
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680

V(BR)DSS
80 660
EAS

640
60
620

40 600

580
20
560

0 540
20 40 60 80 100 120 °C 160 -60 -20 20 60 100 °C 180
Tj Tj

23 Avalanche power losses 24 Typ. capacitances

PAR = f (f ) C = f (VDS)
parameter: E AR=0.2mJ parameter: V GS=0V, f=1 MHz
200 10 4

W pF

160
10 3
140 Ciss
PAR

120

100 10 2

80 Coss

60
10 1
40

20 Crss

0 4 5 6
10 0
10 10 Hz 10 0 100 200 300 400 V 600

f VDS

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Final data SPA03N60C3

25 Typ. Coss stored energy

Eoss=f(VDS)

2.5

µJ
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Eoss

1.5

0.5

0
0 100 200 300 400 V 600
VDS

Definition of diodes switching characteristics

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Final data SPA03N60C3

P-TO-220-3-1
B
10 ±0.4 4.44
A
3.7 ±0.2 2.8 ±0.2 1.27±0.13
15.38 ±0.6

www.DataSheet4U.com 0.05

9.98 ±0.48
13.5 ±0.5
5.23 ±0.9

0.5 ±0.1
3x
0.75 ±0.1 2.51±0.2
1.17 ±0.22
2x 2.54
0.25 M A B C

All metal surfaces tin plated, except area of cut.

Metal surface min. x=7.25, y=12.3

P-TO-263-3-2 (D 2-PAK)

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Final data SPA03N60C3

P-TO-220-3-31 (FullPAK)

www.DataSheet4U.com

Please refer to mounting instructions (application note AN-TO220-3-31-01)

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Final data SPA03N60C3

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© Infineon Technologies AG 1999
All Rights Reserved.
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