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D1 D2
TSSOP-8
Top View
D1/D2 1 8 D1/D2
S1 2 7 S2 G1 G2
S1 3 6 S2
G1 4 5 G2
S1 S2
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 64 83 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 89 120 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 53 70 °C/W
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 2: June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
30 20
10V 3V VDS=5V
4V
VGS =2V 15
20
ID(A)
ID(A)
10
10
125°C
5
VGS =1.5V
25°C
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5
VDS(Volts) VGS(Volts)
Figure 1: On-Regions Characteristics Figure 2: Transfer Characteristics
50 1.6
VGS=2.5V
Normalize ON-Resistance
40 ID=6A
VGS=4.5V
VGS =1.8V 1.4
ID=7A
RDS(ON)(mΩ)
30 VGS=1.8V
VGS =2.5V ID=5A
1.2
20 VGS=10V
VGS =4.5V
ID=7.5A
10 1.0
VGS =10V
0 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID(A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature
60 1E+01
ID=7.5A
1E+00
50
1E-01 125°C
RDS(ON)(mΩ)
40
IS(A)
1E-02
125°C
30
1E-03
20 1E-04 25°C
25°C
10 1E-05
0 2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0
VGS(Volts) VSD(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
5 2000
VDS=10V
ID=7.5A 1600 Ciss
4
Capacitance (pF)
1200
VGS(Volts)
2 800
Crss
1 400 Coss
0 0
0 5 10 15 20 0 5 10 15 20
Qg (nC) VDS(Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0
TJ(Max)=150°C 40
TA=25°C TJ(Max)=150°C
RDS(ON) 10µs TA=25°C
30
10.0 limited 100µs
Power (W)
ID (Amps)
1ms
20
0.1s 10ms
1.0
1s 10
10s
DC
0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)
10
D=Ton/T In descending order
ZθJA Normalized Transient
RθJA=83°C/W
1
PD
0.1
Ton
T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance