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AO8814

Common-Drain Dual N-Channel Enhancement Mode Field


Effect Transistor

General Description Features

The AO8814 uses advanced trench technology to VDS (V) = 20V


provide excellent RDS(ON), low gate charge and ID = 7.5 A (VGS = 10V)
operation with gate voltages as low as 1.8V while RDS(ON) < 16mΩ (VGS = 10V)
retaining a 12V VGS(MAX) rating. It is ESD protected. RDS(ON) < 18mΩ (VGS = 4.5V)
This device is suitable for use as a uni-directional or RDS(ON) < 24mΩ (VGS = 2.5V)
bi-directional load switch, facilitated by its common-
RDS(ON) < 34mΩ (VGS = 1.8V)
drain configuration. Standard Product AO8814is Pb-
ESD Rating: 2500V HBM
free (meets ROHS & Sony 259 specifications).
AO8814L is a Green Product ordering option.
AO8814 and AO8814L are electrically identical.

D1 D2

TSSOP-8
Top View

D1/D2 1 8 D1/D2
S1 2 7 S2 G1 G2
S1 3 6 S2
G1 4 5 G2

S1 S2

Absolute Maximum Ratings TA=25°C unless otherwise noted


Parameter Symbol Maximum Units
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TA=25°C 7.5
Current A TA=70°C ID 6 A
B
Pulsed Drain Current IDM 30
TA=25°C 1.5
PD W
Power Dissipation A TA=70°C 0.96
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 64 83 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 89 120 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 53 70 °C/W

Alpha & Omega Semiconductor, Ltd.


AO8814

Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units


STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 20 V
VDS=16V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±10V 10 µA
BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 V
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 0.71 1 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 30 A
VGS=10V, ID=7.5A 13 16
mΩ
TJ=125°C 18 22
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=7A 15 18 mΩ
VGS=2.5V, ID=6A 19 24 mΩ
VGS=1.8V, ID=5A 26 34 mΩ
gFS Forward Transconductance VDS=5V, ID=7.5A 30 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1 V
IS Maximum Body-Diode Continuous Current 2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1390 pF
Coss Output Capacitance VGS=0V, VDS=10V, f=1MHz 190 pF
Crss Reverse Transfer Capacitance 150 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.5 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 15.4 nC
Qgs Gate Source Charge VGS=4.5V, VDS=10V, ID=7.5A 1.4 nC
Qgd Gate Drain Charge 4 nC
tD(on) Turn-On DelayTime 6.2 ns
tr Turn-On Rise Time VGS=5V, VDS=10V, RL=1.3Ω, 11 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 40.5 ns
tf Turn-Off Fall Time 10 ns
trr Body Diode Reverse Recovery Time IF=7.5A, dI/dt=100A/µs 15 ns
Qrr Body Diode Reverse Recovery Charge IF=7.5A, dI/dt=100A/µs 5.1 nC

A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 2: June 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.


AO8814

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 20
10V 3V VDS=5V
4V
VGS =2V 15
20
ID(A)

ID(A)
10

10
125°C
5
VGS =1.5V
25°C
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5
VDS(Volts) VGS(Volts)
Figure 1: On-Regions Characteristics Figure 2: Transfer Characteristics

50 1.6
VGS=2.5V
Normalize ON-Resistance
40 ID=6A
VGS=4.5V
VGS =1.8V 1.4
ID=7A
RDS(ON)(mΩ)

30 VGS=1.8V
VGS =2.5V ID=5A
1.2
20 VGS=10V
VGS =4.5V
ID=7.5A
10 1.0
VGS =10V

0 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID(A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

60 1E+01
ID=7.5A
1E+00
50

1E-01 125°C
RDS(ON)(mΩ)

40
IS(A)

1E-02
125°C
30
1E-03

20 1E-04 25°C
25°C

10 1E-05
0 2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0
VGS(Volts) VSD(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.


AO8814

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 2000
VDS=10V
ID=7.5A 1600 Ciss
4

Capacitance (pF)
1200
VGS(Volts)

2 800

Crss
1 400 Coss

0 0
0 5 10 15 20 0 5 10 15 20

Qg (nC) VDS(Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
TJ(Max)=150°C 40
TA=25°C TJ(Max)=150°C
RDS(ON) 10µs TA=25°C
30
10.0 limited 100µs
Power (W)
ID (Amps)

1ms
20
0.1s 10ms
1.0
1s 10
10s
DC
0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
ZθJA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse


Thermal Resistance

RθJA=83°C/W
1

PD
0.1
Ton
T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.