NCN

www.nanohub.org

ECE606: Solid State Devices

Lecture 32: MOS Electrostatics
Muhammad Ashraful Alam
alam@purdue.edu

Alam ECE-606 S09 1

Outline

1. Background
2. Band diagram in equilibrium and with bias
3. Qualitative Q-V characteristics of MOS capacitor
4. Conclusion

REF: Chapters 15-18 from SDF

Alam ECE-606 S09 2

 Outline of the Course

Device-specific Application specific Physical Principle of Foundation

system design device operation device Operation in Physics

EE606
TFT for
Displays Quantum
Resistors (5 wk)
Mechanics
CMOS-based +
Circuits for mP Diodes (3 wk) Statistical
Mechanics
LASERS for Bipolar (3 wk)
Disk Drives
MOSFETs ( 3 wks) Transport
MEMS for Equations
Read heads

Alam ECE-606 S09 3

 Scaling of MOSFETs

Vacuum
Bipolar MOSFET Now ??
Tubes
Spintronics

Bio Sensors

Displays ….
1906-1950s 1947-1980s 1960-until now

?
Temp

Tubes bipolar MOS

1900 1920 1940 1960 1980 2000 2020

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 Basic Configuration of a MOSFET

Gate
Source Drain
n+
y
n+ n+

Substrate (p)

Almost like a lateral bipolar transistor!

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Symbols
S G D
D

n+ n+
G B

No channel S
when VG= 0

S G D
D

n+ n+ G B

Channel S
when VG= 0
Alam ECE-606 S09 6
Background

S G D

n+ n+

Strained MOSFET High-k/metal gate MOSFET

Sources:
IBM J. Res. Dev.
Google Images
Intel website

Alam ECE-606 S09 7

Outline

1. Background

2. Band diagram in equilibrium and with bias

3. Qualitative Q-V characteristics of MOS capacitor

4. Conclusion

Alam ECE-606 S09 8

Topic Map

Equilibrium DC Small Large Circuits

signal Signal
Diode

Schottky

BJT/HBT

MOS

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 Electrostatics of MOS Capacitor in Equilibrium

Vacuum level

qχi
Gate qχs
qΦm
EC
EF
Substrate (p)
x
EV

Schottky barrier with an

interposed dielectric
Metal Insulator P-Semiconductor
Alam ECE-606 S09 10
 Idealized MOS Capacitor

Vacuum Level
qχi
Gate
qχs
qΦm
EC
y Substrate (p) EF
EV

Metal Insulator P-Semiconductor

Alam ECE-606 S09 11

Potential, Field, Charges

V
qχi
x
qχs
qΦm

E
x

Vbi=0 ρ
x

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Topic Map

Equilibrium DC Small Large Circuits

signal Signal
Diode

Schottky

BJT/HBT

MOSCAP

Alam ECE-606 S09 13

 Electrostatics under Bias

VG VG VG

VG’ >VT’
+Q
+Q +Q Exposed
(Holes) Acceptors
-Q -Q
-Q
(Electrons) Electrons
Accumulation Dep. Inversion

0 VT’ VG’
14
 Where do charges come from?

VG VG VG

VG’ >VT’
+Q
+Q +Q Exposed
(Holes) Acceptors
-Q -Q
-Q
(Electrons) Electrons

• Integrate charge to find potential.

Alam ECE-606 S09 15
 Response Time

VG VG VG

VG’ >VT’

Dielectric Relaxation SRH Recombination-Generation

σ np − ni2 − ni
τ= = R →
κ s ε0 τn ( p + p1 ) + τ p (n + n1 ) τn + τ p

Alam ECE-606 S09

Ref. Lecture no. 15 16
Outline

1. Background

2. Band diagram in equilibrium and with bias

3. Qualitative Q-V characteristics of MOS capacitor

4. Conclusion

Alam ECE-606 S09 17

 Charges and Surface Potential

log10 QS (ψ S )

accumulation Depletion Inversion

EC
~ e − qψ S / 2 kBT ~ e qψ S / 2 kBT
VG’=0 EF

EV

~ ψS

ψS = 0
2φF ψS
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 Solution of QS(ψS)


∇• D =ρ

(
∇ • J n −q= ) (G − R ) qψ S
 EC
(
∇ • J p q= ) (G − R )
EF
EG
Poisson equation EV

d 2ψ −q
= 
 p ( x ) − n ( x ) + N +
− N −
A

dx 2
κ Siε 0
0 0 D
ψS > 0

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 (Depletion) Potential, Field, Charges
Insulator Semiconductor
Vox -qV
ψs
x

E
VG
x

W
ρ
V=
G Vox +ψ s x

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 Surface Potential

1  qN AW   qN AW 2  -qV
(2) ψ s =  W   ψs
2  κ sε 0   2κ ε
s 0  x

2κ sε 0 ψ s
(3) W=
qN A E
x
(1) + qN AW
E (0 ) = −
κ sε 0
W
ρ
x
(4) V=
G Vox + ψ s
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Gate Voltage /Surface Potential in Depletion Region
 qN W 2


|Qs|(C/cm2)
−
VG Eox (0 ) x0 +  A

 2κ sε 0  Exact

 qN AW   qN AW 2 
  x0 +  
κ ε
 ox 0   2κ ε
s 0 
Delta-depletion
qN A x0 2κ oxε 0
ψ s +ψ s
κ oxε 0 qN A

≡ B ψ s +ψ s
 qN AW 2 
.....because ψ s =  
 2κ sε 0 
ψs
VG known, determine ψS 2φF kT / q
kT / q 22
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Gate Voltage and Depletion Charge
QS (ψ S ) = 2qN Aκ Siε 0ψ S
−qN AW = ρ W

log10|Qs(ψs)|

~ e qψ S / 2 kBT

~ ψS

Ψs(V)
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 Surface Potential and Induced Charge

+Q

VG
VG VG
-Q

+Q VG’ >VT’
(Holes) log10|Qs(ψs)|
C/cm2
~ e qψ S / 2 kBT
-Q +Q
(Electrons) Exposed
~ e− qψ S / 2 kBT Acceptors
-Q
~ ψS -Q
Why did we not
see these phenomena Electrons
in p-n junctions?
Alam ECE-606 S09 24
Conclusion

MOSFET is the dominant electronic device now, not

because it is superior to BJTs in terms of performance,
but because it consumes far less power and allow denser
integration.

MOSFET is an inherently 2D device. We separate out the

vertical and horizontal components to qualitatively
explore the mechanics of its operation.

We explored relation between gate voltage and induced

charge for a MOS-C today. We will continue this
discussion in the next class.

Alam ECE-606 S09 25