ECE

 305     Spring  2015  

ECE  305  Homework  SOLUTIONS:  Week  14  

 
Mark  Lundstrom  
Purdue  University  
 
(5.6.15)  
 
1) For  MOSFETs,  we  focus  on  understanding  drain  current.    The  gate  current  is  taken  to  
be  negligibly  small.    For  BJTs,  we  focus  first  on  the  collector  current.    For  good  BJTs,  
the  base  current  is  small,  but  not  negligible.    Before  we  discuss  the  base  current,  we  
focus  on  the  collector  current.    We  can  understand  the  most  important  features  of  the  
common  emitter  collector  current  characteristic,   I C (VBE ,VCE )  or  the  common  base  
collector  current  characteristic,   I C (VBE ,VCB ) ,  by  examining  the  minority  carrier  
concentration  in  the  base.    Answer  the  following  questions  for  an  NPN  BJT  by  
providing  a  sketch  of   !n ( x )  in  the  base.      
 
1a)   Sketch   !n ( x ) vs.  x  for  the  forward  active  region  of  operation.  
1b)   Sketch   !n ( x ) vs.  x  for  the  saturation  region  of  operation.  
1c)   Sketch   !n ( x ) vs.  x  for  the  reverse  active  region  of  operation.  
1d)   Sketch   !n ( x ) vs.  x  for  the  cut-­‐off  region  of  operation.  
 
HINT:    Begin  with  the  Law  of  the  Junction  and  assume  a  good  transistor,  which  means  
the  base  is  short  compared  to  a  minority  carrier  diffusion  length.  
 

 
 

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HW  Week  14  Solutions  (continued)  

 
1a)   Sketch   !n ( x ) vs.  x  for  the  forward  active  region  of  operation.  
 
Solution:  
The  Law  of  the  Junction  for  an  NP  junction  says  that  the  excess  minority  electron  
concentration  injected  in  the  neutral  P-­‐region  (which  begins  at  the  end  of  the  
depletion  region,  is  

!n ( x = 0 ) =
ni2 qVA kBT
NA
e ( " 1     )
where   x = 0 is  the  beginning  of  the  neutral  base  and   V A  is  the  forward  bias  across  
the  junction.      In  a  BJT,  we  have  two  junctions.    At   x = 0 ,  the  emitter-­‐base  junction  
controls   !n ( x = 0 ) ,  so  

!n ( x = 0 ) =
ni2 qVBE
N AB
e ( k BT
" 1   )
At  the  end  of  the  neutral  base,   x = WB ,  the base-­‐collector  junction  controls   !n ( x = WB ) ,  
so    

!n ( x = WB ) =
N AB
(
ni2 qVBC kBT
e " 1   )
So  if  we  know  the  bias  across  each  junction,  then  we  know   !n  at  each  end  of  the  
base.    Since  the  base  is  assumed  to  be  short,  we  simply  connect  the  two  end  points  
with  a  straight  line.  
 
Forward  active  region  means:    The  emitter  base  junction  is  forward  biased  ( VBE > 0 )  
and  the  base  collector  junction  is  reverse-­‐biased   VBC < 0 .      

(
!n x = 0 =
ni2 qVBE
N AB
)e ( k BT
"1 )
 

( )  
2
n
(
!n x = WB = ) i
N AB
qV
e BC
k BT
"1

 
For  a  moderate  forward  bias  on  the  emitter-­‐base  junction,  the  exponential  in  the  
first  equation  dominates,  so  to  a  very  good  approximation:  
 
n2 qV k T n2
( )
!n x = 0 " i e BE B >> i
N AB N AB  
For  a  moderate  reverse  bias  on  the  base-­‐collector  junction,  the  exponential  in  the  
second  equation  above  approaches  zero,  so  to  a  very  good  approximation:  
 

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HW  Week  14  Solutions  (continued)  

ni2
!n x = WB " #( N AB
) << !n x = 0 ( )
 
( )
Because   !n x = WB is  so  small,  we  can  usually  assume  that   !n ( x = WB ) " 0 .    In  the  
( )
figure  below,  we  have  exaggerated   !n x = WB so  that  it  can  be  seen  on  the  plot.      
 

 
 
Additional  note:    We  could  also  ask  about  the  total  electron  density,  not  just  the  
excess  electron  density.    In  that  case,  we  would  have:  
 
n2 n2 qV k T n2
( ) ( N AB N AB
)
n x = 0 = !n x = 0 + i = i e BE B >> i  
N AB
ni2 n2 qV
( )
n x = WB = !n x = WB + ( ) = i e BC
N AB N AB
k BT
" 0  

 
 
1b)   Sketch   !n ( x ) vs.  x  for  the  saturation  region  of  operation.  
 
Solution:  
 
Saturation  region  means:    The  emitter  base  junction  is  forward  biased  ( VBE > 0 )  and  
the  base  collector  junction  is  forward-­‐biased   VBC > 0 .      
 
n2
( n2
!n ( x = 0 ) = i eqVBE kBT " 1 = i eqVBE kBT >> i
N AB N AB
) n2
N AB  
!n ( x = 0 ) >> 0
 
!n ( x = WB ) =
ni2 qVBC
N AB
e ( k BT
"1 = )
ni2 qVBC
N AB
e
k BT
>>
ni2
N AB  
0 << !n ( x = WB ) < !n ( x = 0 )
 
 
 

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HW  Week  14  Solutions  (continued)  

 
 

 
 
 
1c)   Sketch   !n ( x ) vs.  x  for  the  reverse  active  region  of  operation.  
 
Reverse  active  region  means:    The  emitter  base  junction  is  reverse  biased  ( VBE << 0 )  
and  the  base  collector  junction  is  forward-­‐biased   VBC > 0 .      
 
n2
(
!n ( x = 0 ) = i eqVBE kBT " 1 = " i
N AB
) n2
N AB  
!n ( x = 0 ) " 0
 
!n ( x = WB ) =
ni2 qVBC
N AB
e ( k BT
"1 =) ni2 qVBC
N AB
e k BT
>>
ni2
N AB  
!n ( x = WB ) >> 0
 
 
 

 
 
Again,  the  small  negative  excess  carrier  concentration  is  exaggerated  for  clarity.  
 
 

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HW  Week  14  Solutions  (continued)  
 
1d)   Sketch   !n ( x ) vs.  x  for  the  cut-­‐off  region  of  operation.  
 
Reverse  active  region  means:    The  emitter  base  junction  is  reverse  biased  ( VBE << 0 )  
and  the  base  collector  junction  is  reverse-­‐biased   VBC << 0 .      
 

(
n2 qV k T
!n ( x = 0 ) = i e BE B " 1 = " i
N AB
) n2
N AB  
!n ( x = 0 ) " 0
 
!n ( x = WB ) =
ni2 qVBC
N AB
e ( k BT
)
"1 = "
ni2
N AB  
!n ( x = WB ) " 0
 
 

 
 
Again,  the  small  negative  excess  carrier  concentrations  are  exaggerated  for  clarity.  
 
 
2) The  sketch  below  shows  an  NPN  BJT.    Assume  that  it  is  in  the  forward  active  region  
with   I C = 1.23 mA  and   I E = 1.27 mA .    Answer  the  following  questions.  

 
 
 

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HW  Week  14  Solutions  (continued)  

 
2a)   What  is  the  common  emitter  current  gain,   ! dc ?      
 
Solution:  
I IC 1.23 1.23 1.23
! dc " C = = = = = 31    
I B I E # I C 1.27 # 1.23 0.04 0.04
! dc = 31  
 
2b)   What  is  the  common  base  current  gain,   ! dc ?  
 
Solution:  
I 1.23
! dc " C = = 0.97     ! dc = 0.97  
I E 1.27
 
2c)   What  is  the  base  transport  factor,   ! T ?  
 
Solution:  
The  base  transport  factor  is  a  quantity  that  describes  internal  current  
components.    Without  additional  information,  it  cannot  be  determined  from  the  
terminal  currents.  
 
2d)   What  is  the  emitter  injection  efficiency,   ! ?  
 
Solution:  
The  emitter  injection  efficiency  is  a  quantity  that  describes  internal  current  
components.    Without  additional  information,  it  cannot  be  determined  from  the  
terminal  currents.  
 
 
2e)   What  is  the  emitter  injection  efficiency  assuming  that  there  is  no  recombination  
in  the  base?  
 
Solution:  
If  there  is  no  recombination  in  the  base,  then  all  of  the  base  current  is  due  to  
holes  that  are  back-­‐injected  into  the  emitter,   I Ep .    Also,  since  there  is  no  base  
recombination,  the  electron  current  at  the  end  of  the  base  ( I Cn )  is  equal  to  the  
current  injected  into  the  base  from  the  emitter,   I En .    Accordingly,  
 
 
 

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HW  Week  14  Solutions  (continued)  

 
I Ep = I B = I E ! I C = 0.04 mA  
I En = I Cn = I C = 1.23 mA  
I En 1.27
γ ≡ = = 0.97    
I En + I Ep 1.23 + 0.04
! = 0.97
 
 
Note  that  when  there  is  no  recombination  in  the  base,  the  emitter  injection  
efficiency  is  equal  to  the  common  base  current  gain,   ! = " dc  
 
 
3) The  sketch  below  shows  an  NPN  BJT  biased  in  the  forward  active  region  with  the  four  
current  components  indicated.    Assume:  
 
I En = 1.000 mA  
I Ep = 0.005 mA  
I Cn = 0.995 mA  
I Cp ! 0  
 
and  answer  the  questions  below.  

 
3a)    What  is  the  emitter  injection  efficiency?  
 
Solution:      
We  want  the  emitter  current  to  consist  almost  entirely  of  electrons  injected  into  
the  base,  but  we  also  get  hole  injected  from  the  base  to  the  emitter.    The  emitter  
injection  efficiency,   ! ,    is  the  ratio  of  the  current  we  want  to  the  total  current  
across  the  forward  emitter-­‐base  junction.  
 
I En 1.000
! " = = 0.995     ! = 0.995  
I En + I Ep 1.000 + 0.005

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HW  Week  14  Solutions  (continued)  

 
3b)    What  is  the  base  transport  factor?  
 
Solution:  
The  base  transport  factor,   ! T ,  is  the  ratio  of  the  electron  current  that  leaves  at  
the  collector-­‐base  junction,   I Cn  ,  to  the  electron  current  that  was  injected  at  
emitter-­‐base  junction,   I En .    
I Cn 0.995
!T " = = 0.995     ! T = 0.995  
I En 1.000
 
3c)      What  is  the  common  emitter  current  gain?  
 
Solution:  
I I Cn 0.995
! dc " C = = = 99.5    
I B I Ep + ( I En # I Cn ) 0.005 + 0.005
The  bas  current  consists  of  two  terms,  holes  that  are  injected  into  the  emitter  
( I Ep  )  and  holes  that  recombine  with  electrons  in  the  base,   ( I En ! I Cn ) .    
! dc = 99.5  
 
3d)    What  is  the  common  base  current  gain?  
 
Solution:  
I I Cn 0.995
! dc " C = = = 0.990  
I E I En + I Ep 1.000 + 0.005
 
 
It  is  worth  noting  that  we  can  write:    
I Cn I En I
! dc = = " Cn = # ! T = 0.995 " 0.995 = 0.990  
I En + I Ep I En + I Ep I En
IC
! dc " = # ! T = 0.990  
IE
 
 
 
 
 
 
 
 

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HW  Week  14  Solutions  (continued)  

 
4) The  four  current  components  for  the  two  diodes  in  a  PNP  transistor  are  defined  
below.    Assume  that  the  base  width  is  short  (i.e.   WB << Ln )  and  that  the  transistor  is  
biased  in  the  forward  active  region  with   VCB = 0 .    The  common  emitter  current  gain  is  
! dc = 100 .    Answer  the  following  questions  assuming  that   I Cp = 10 mA .    Note  that  
VCB = 0  places  the  transistor  on  the  borderline  of  the  active  and  saturation  regions.    
The  behavior  is  continuous  from  one  region  to  the  next,  so  we  can  call  this  the  active  
or  saturation  region.    It  is  better  to  consider  it  to  be  the  active  region,  because  it  takes  
a  moderate  forward  bias  on  the  base-­‐collector  junction  to  really  get  into  the  
saturation  region  and  see  the  collector  current  drop.  

 
4a)    What  is   I Ep ?  
 
Solution:    
Since  the  base  is  short,  the  base  transport  factor,   ! T ,  is  very  close  to  1.      Since,  
I Cp = ! T I Ep ,  we  conclude  that   I Ep = I Cp  
I Ep = 10 mA  
 
4b)  What  is   I En ?  
Solution:  
In  the  active  region,   I C ! I Cp = 10 mA  
In  the  active  region,  the  base  current  is   I B = I C ! dc = 0.1 mA  
 
Since  the  base  is  short,   I B = I En ,  so  we  conclude   I En = 0.1 mA  
 
4c)    What  is   I Cn ?  
 
Solution:  
Since  the  base-­‐collector  junction  is  zero-­‐biased,   I Cn = 0 mA  

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HW  Week  14  Solutions  (continued)  

 
4d)    What  is  the  common  base  current  gain,   ! dc  ?  
 
Solution:  
I IC IC 1 # dc
! dc " C = = = =    
I E I C + I B I C + I C # dc 1+ 1 # dc # dc + 1
" dc 100
! dc = = = 0.99  
" dc + 1 101
! dc = 0.99  
 
5) Consider  a  bipolar  junction  transistor.    All  three  regions  (emitter,  base  and  collector)  
are  composed  of  the  same  semiconductor  material  (except  for  doping  type/density).    
The  excess  minority  carrier  concentrations  for  a  specific  bias  point  are  shown  in  the  
figure  below  –  note  that  the  scale  is  linear  (although  the  concentrations  near  the  CB  
junction  are  exaggerated  for  clarity).    Assume  that   T = 300 K  and  that  the  base  is  
doped  at   N B = 1.0 ! 1017 cm "3  ( N B is  either   N A  or   N D  you  will  need  to  figure  out  
which.)    The  diffusion  coefficients  for  electrons  and  holes  are   Dn = 20 cm 2 /s  and  
D p = 10 cm 2 /s  respectively.  Answer  the  following  questions.  
 
 

 
 
5a)     What  type  of  transistor  is  this?    NPN  or  PNP?    Explain  how  you  know.  
 
Solution  
PNP.      
 
The  plot  shows  the  excess  minority  carrier  densities  in  each  region,  so  the  majority  
carriers  are  Emitter:    holes,  Base:    electrons,  Collector:  holes.    Hence,  it  is  a  PNP  
transistor.  

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HW  Week  14  Solutions  (continued)  

 
5b)     What  bias  regime  is  illustrated  in  the  figure?  
 
Solution:  
The  emitter  base  junction  is  forward  biased  (because  we  have  a  positive  number  of  
excess  carriers  on  each  side  of  the  junction).    The  base-­‐collector  junction  is  reverse-­‐
biased  because  we  have  a  negative  excess  carrier  density  on  each  side.    FB  emitter-­‐
base,  RB  base  collector,  means  that  the  bias  region  is  
 
Forward  active  region  
 
5c)     What  is  the  doping  density  in  the  emitter  (recall  that   N B  is  given)?  
 
Solution:  
The  Law  of  the  Junction  gives  the  excess  hole  concentration  injected  into  the  base  as  

!p ( x = 0 ) =
N DB
e(
ni2 qVBE kBT
)
" 1  

and  the  excess  electron  concentration  injected  into  the  emitter  as  

!n ( x " = 0 ) =
N AE
e (
ni2 qVBE kBT
)
# 1  

Dividing  the  first  equation  by  the  second:  

!p ( x = 0 ) N AE
=
!n ( x " = 0 ) N DB  
From  the  plot     !p ( x = 0 ) = 1" 1012 cm -3 and !n ( x " = 0 ) = 1# 1011 cm -3 ,  so  
!p ( x = 0 ) N AE
   
= 10 = 17
!n ( x " = 0 ) 10  
so  we  conclude:  
N AE = 1018 cm -3  
 
 
 
5d)     Which  of  the  following  best  describes  the  base  region?  Explain  your  answer.  
 
i)    the  base  width  is  much  larger  than  a  minority  carrier  diffusion  length  
ii)    recombination  is  the  dominant  process  for  minority  carrier  flow  through  the  
base  
iii)  punch-­‐through  has  occurred  at  the  bias  point  illustrated  in  the  figure  
iv)    all  of  the  above  
v)    none  of  the  above  
 

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HW  Week  14  Solutions  (continued)  

 

Solution:  
 

The  base  width  is  much  shorter  than  a  minority  carrier  diffusion  length  
 

There  is  a  clear,  linear,  minority  carrier  diffusion  profile,  which  indicates  that  
recombination  is  negligible,  so  the  minority  carrier  diffusion  length  is  much  longer  
than  the  base  width  and  recombination  is  negligible.  
 
5e)     What  is  the  emitter  injection  efficiency  (numerical  answer)?  
 
Solution:  
The  hole  current  injected  from  the  emitter  to  the  base  is  

( )
D n2
J Ep = q p i eqVEB /kBT ! 1    
WB N DB
(The  base  is  short,  so  we  use  the  base  width,  not  the  diffusion  length.)  
 
The  electron  current  injected  from  the  base  to  the  emitter  is  
D n2
(
J En = q n i eqVEB /kBT ! 1  
Ln N AE
)
(The  emitter  is  long,  so  we  use  the  electron  diffusion  length,  not  the  emitter  width.)  
For  later  use,  we  note:  
J En Dn WB N DB
=  
J E p D p Ln N AE
The  emitter  injection  efficiency  is  
(1
JE p 1 " D W N %
! = = = $ 1+ n B DB '  
J E p + J En 1+ J En J E p # D p Ln N AE &
Putting  in  numbers:  
(1 (1
" D W N % " 20 cm 2 s 0.2 µm 1017 cm -3 %
( )
(1
! = $ 1+ n B DB ' = $ 1+ ) ) ' = 1+ 0.04 = 1.04  
# D p Ln N AE & # 10 cm 2 s 1.0 µm 1018 cm -3 &
! = 0.96
 
 
 
 
 
 
 
 
 

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ECE  305     Spring  2015  

HW  Week  14  Solutions  (continued)  

 
5f)     What  is   ! dc  for  this  transistor?  
 
Solution:  
Because  there  is  no  recombination  in  the  base,    

( )
D p ni2 qV /k T
J Ep = J Cp = J C = q e EB B ! 1  
WB N DB
Because  there  is  no  recombination  in  the  base:  

(
D n2 qV /k T
J En = J B = q n i e EB B ! 1  
Ln N AE
)
J C D p Ln N DB
! dc " = = 25       ! dc = 25
J B Dn WB N AE  
 
A  quicker  way  to  get  this  answer  is  to  use  
 
" 0.96
! dc = = = 24  
1# " 1# 0.96
 
(Difference  is  due  to  round-­‐off  error.)  
 
 
 

ECE-­‐305     13   Spring  2015