UNITED INSTITUTE OF TECHNOLOGY

Periyanaickenpalayam, Coimbatore – 641 020

EC8252-ELECTRONIC DEVICES

QUESTION BANK

I YEAR ELECTRONICS AND COMMUNICATION ENGINEERING

II SEMESTER
ACADEMIC YEAR 2019 – 2020
REGULATION 2017

Prepared by Verified by Approved by

 I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

EC8252
ELECTRONIC DEVICES

UNIT – I

SEMICONDUCTOR DIODE
PN junction diode, Current equations, Energy Band diagram, Diffusion and drift
current densities, forward and reverse bias characteristics, Transition and
Diffusion Capacitances, Switching Characteristics, Breakdown in PN Junction
Diodes.

Part - A

1. Define mass action law. (MAY / JUNE 2014) / (NOV / DEC 2010)
(NOV/DEC 2016)
2. What is the principle operation of a PN Junction diode in reverse bias condition?

(MAY/JUNE 2014)
3. Sketch the forward bias characteristics of the pn Junction diode.
(MAY/JUNE 2015)
4. What is meant by diffusion current in a semi conductor?
(MAY/JUNE 2014)
(or)
Define diffusion and drift current. (NOV/DEC 2014)
(or)
What do you mean by drift current? (MAY/JUNE 2015)
(or)
State the difference between drift and diffusion current densities. (NOV/DEC 2017)
(or)
What is meant by diffusion current? (MAY/JUNE 2016)
(or)
Give the expression for diffusion current density. (NOV/DEC 2019)

5. A silicon diode has a saturation current of 7.5 μA at room temperature 300° K calculate the
saturation
current at 400° K. (MAY/JUNE 2010)
6. Define Knee voltage of a diode.
(NOV/DEC 2009)
(or)
What is cut in voltage?
7. What is peak inverse voltage? (NOV/DEC
2010,MAY/JUNE2017)
(or)
What is meant by PIV (Peak Inverse Voltage) of a PN Junction diode? (MAY/JUNE 2012)

UNITED INSTITUTE OF TECHNOLOGY 15

 I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

8. What is meant by dynamic resistance of diode?

(NOV/DEC 2011)
9. Calculate the speed of electron when it falls by a potential of 300 KVolts.
(NOV/DEC 2012)
10. Relate voltage and current of forward biased PN Junction diode. (MAY/JUNE 2014)
11. What is selectivity? (MAY/JUNE 2009)
12. Why does reverse saturation current vary with temperature in diode? (NOV/DEC 2009)
(or)
State the effect of temperature of PN Junction diode. (NOV/DEC 2012)
13. Define forbidden gap. (NOV/DEC 2009)
(or)
Draw the energy band diagram for intrinsic and extrinsic semiconductors. (NOV/DEC 2011/2013)
14. Give the expression for transition capacitance and diffusion capacitance of a PN diode.

(MAY/JUNE2010)
(or)
15. Define diffusion capacitance. (NOV/DEC 2010) /(NOV/DEC 2012) (MAY/JUNE2019)

16. Difference between intrinsic and extrinsic semiconductor (MAY/JUNE 2011, 2012)
(or)
Distinguish between intrinsic and extrinsic semiconductors. (MAY / JUNE 2009)
17. Define barrier potential in a PN Junction diode. (MAY / JUNE 2012)
(or)
What is barrier potential? (NOV / DEC 2016)
18. Mention the two types of Junction capacitance. (MAY / JUNE 2013)
19. Define Electron Volt. (MAY / JUNE 2014)
20. What is avalanche break down? (MAY/JUNE 2012) / (NOV / DEC 2012)
(or)
Define avalanche break down. (MAY/JUNE 2010)
(or)
What is meant by Avalanche breakdown? (NOV/DEC 2019)
10 -3
21. Consider a silicon p Junction at T = 300K so that ni = 1.5× 10 cm . The n type doping is
1× 1016 cm-3 and a forward bias of 0.60 V is applied to the pn Junction. Calculate the minority hole
concentration at the edge of the space charge region. (MAY/JUNE 2015)
22. What are the applications of PN diode? (NOV/DEC 2015)
23. Consider a gallium arsenide sample at T = 300K with doping concentration of N a = 0, Nd = 1016 cm-3 and
μn= 8500. Calculate the drift current density if the applied electric field is E = 10V/cm.
(NOV/DEC 2015)
24. Define storage time. (MAY/JUNE2016)
25. Calculate the built in potential barrier in a pn junction diode having following specification: T=300
k, Na=10^18 CM^-3,Nd=10^16 cm^-3 and ni=1.5x10^10 cm^-3. (NOV/DEC 2017)
26. Find the voltage at which the reverse current in a germanium PN junction diode attains a value of 90%
of its saturation value at room temperature. (MAY/JUNE2017)
27. State the relationship between diffusion capacitance and diode current in a PN diode.

UNITED INSTITUTE OF TECHNOLOGY 16

 I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

(MAY/JUNE2018)
28. Write down the diode current equation. (MAY/JUNE2018)
29. Determine the total forward bias current density in a PN junction diode under an applied forward bias
voltage of 0.65 V at 300 K. Assume Js=4.155×10-11 A/cm2. (MAY/JUNE2019)

Part– B

PN Junction Diode Current Equation:

1.Explain the theory of PN Junction diode and derive its diode current equation.
(MAY/JUNE2014)
(or)

Derive the PN diode current equation from the quantitative theory of diode currents.
(MAY/ JUNE 2009)(NOV/DEC 2011)
(or)
Derive the current equation for a PN Junction diode. (NOV/DEC 2011)(NOV/DEC 2016)
(or)
Define and derive the drift and diffusion currents. (MAY/JUNE 2009)
(or)

Derive the PN diode current equation. (MAY/JUNE 2010)

(or)

Drive the expression for drift current density. (MAY/JUNE 2015)

(or)
Drive the expression for diffusion current density. (MAY/JUNE 2015)
(or)
Draw a diagram to illustrate drift current and diffusion current in a semiconductor material. Briefly
explain. (NOV/DEC 2015)
(or)
From the basic concepts, derive an expression for the ideal PN junction current. (MAY/JUNE2019)
(or)
The phosphorous(donor) concentration in a region of a silicon crystal varies linearly from a
concentration of n0=1014 cm-3 at X=0 mm to a concentration of n 1= 1017 cm-3 at X=1 mm. The diffusion
constant for electrons is Dn=22.5 cm2/sec, the diffusion constant for holes is D p= 5.2 cm2/sec, and the
temperature is 300 K .What is the diffusion current density in the positive X-direction?
(NOV/DEC 2019)
PN Junction Diode Operations and its Characteristics:

2.With a neat diagram explain the working of a PN Junction diode in forward bias and reverse bias and
show the effect of temperature on its V-I characteristics. (MAY/JUNE 2010)
(or)
Describe the action of PN junction diode under forward bias and reverse bias condition.

UNITED INSTITUTE OF TECHNOLOGY 17

I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

(MAY/JUNE2016)
(or)
How a PN Junction diode is working? Draw and explain V-I characteristics of PN diode with neat
diagrams. (NOV/DEC 2012)
(or)

Explain the working of a PN Junction diode and explain their VI characteristics.

(MAY/JUNE 2013)
(or)
Explain the V-I characteristics of PN Junction diode in forward and reverse bias.
(MAY/
JUNE 2014)
(or)
Explain how the depletion region at a p-n Junction is formed and explain with relevant sketches for
charge density, electric field intensity and potential energy barriers at the junction.

(MAY/JUNE 2010)
(or)
With necessary diagram, describe the characteristics of a forward and reverse biased PN junction diode.

(NOV/DEC 2015)
(or)
With neat diagram, explain the formation of PN Junction and derive its depletion width.

(NOV/DEC 2010)
(or)
Draw and explain the V-I characteristics of PN diode. (MAY/JUNE2011)
(or)
With neat sketches, describe the construction and working of PN junction semiconductor. What is
depletion layer? Explain the motion of electrons or holes of PN junction in forward and reverse biased

mode. Also explain the V-I characteristics for these bias conditions. (MAY/JUNE 2012)
(or)
Explain the operation of PN junction under zero voltage applied bias condition and derive the
expression for built in potential barrier. (NOV/DEC 2014)

(or)

With the help of space charge width parameter, explain the behavior of PN junction diode when
forward biased and reverse biased and derive the diode current equation. (NOV/DEC 2017)
(or)
Explain the basic structure of the PN junction. (NOV/DEC 2014)
(or)
Derive an expression for PN junction diode forward and reverse currents with suitable diagram and
necessary explanation. (MAY/JUNE2017)

UNITED INSTITUTE OF TECHNOLOGY 18

I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

(or)
Describe the deviation of V-I characteristics of pn junction diode from its ideal. (MAY/JUNE 15)
(or)
Briefly explain about depletion and barrier voltage of a PN junction. (NOV/DEC 2015)

(or)

Describe construction of PN junction diode. Explain the forward and reverse characteristic of PN
junction diode and obtain its VI characteristic curve. (NOV/DEC 2016)

(or)

Demonstrate the working mechanism of a PN junction in both forward bias and reverse bias conditions.
(MAY/JUNE2018)
(or)

Brief about breakdown mechanism in PN diodes. (MAY/JUNE2019)

(or)

Discuss about the forward bias and reverse bias characteristics of a diode and derive the current
equation for a PN diode. (NOV/DEC 2019)

Switching Characteristics of PN junction Diode:

3.Explain and derive current components and switching characteristics of diode (MAY/JUNE 2014)
(or)
Discuss the switching characteristics of PN diode. (MAY/JUNE 2014)
(or)
Discuss the switching characteristics of PN diode with suitable application. (NOV/DEC 2017)
(or)
Discuss the switching characteristics of PN diode with suitable diagrams. (MAY/JUNE2017)
(or)
Write short notes on diode switching characteristics. (NOV/DEC 2014) / (NOV/DEC 2015)
(or)
Enumerate the switching characteristics of the PN Diode with suitable circuit and waveforms.
(MAY/JUNE2019)
PN junction diode transistion diffusion capacitance:

4.What is meant by diffusion capacitance of a PN junction diode? Derive an expression for the diffusion
capacitance in terms of the current and the mean life time for holes. (MAY/JUNE2012)

(or)
What is transition capacitance and obtain expression for transition capacitance in PN junction diode.
(NOV/DEC 2013)
(or)
Derive the transition and diffusion capacitances in PN diode. (NOV/DEC 2019)

UNITED INSTITUTE OF TECHNOLOGY 19

 I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

PN diode power dissipation and Different Potential:

5.Explain how temperature affects the power dissipation in PN diode. (MAY/JUNE 2011)
(or)
Analyze the impact of temperature on V-I characteristics of PN diode. (MAY/JUNE2018)
6.State continuity equation and prove that concentration of charges is independent of time with zero
electric field. (NOV/DEC 2010)
7.With the help of energy band diagram of PN junction diode, derive the expression for the contact
difference of potential. (MAY/JUNE 2012)

PN junction Diode and Related Problems:

8.A diode with 7000mW power dispassion at 25°C has a 5mW/°C deriving factor. If the forward voltage
drop remains constant at 0.7V calculate the maximum forward current at 25°C and at 65°C temperature.
(MAY/JUNE 2011)
(or)
Consider a germanium PN junction at 300K with doping concentration N A = 1.5× 1018 cm-3 and ND = 2×
1015 cm-3 in the p and n sides of the junction respectively. Assuming the intrinsic carrier concentration of
germanium ni = 2.5× 1013 cm-3 at 300K. Determine the contact potential across the junction.

(MAY/JUNE 2012)
(or)
Consider a Si PN junction at T=300K with doping concentrations of Na = 1016cm-3 and Nd = 1015cm-3.
Assume that ni = 1.5 × 1013 cm-3 . Calculate width of the space charge region in a PN junction, when a
reverse bias voltage VR = 5V is applied. (NOV/DEC 2014)
(or)
The resistivities of the two sides of an abrupt germanium diode or 2Ω cm (p side) and 1Ω cm (n side) at
300K. the mobility of electrons and holes in germanium are μ n = 3800cm2 / V sec and μp = 1800cm2 /
V sec respectively. Calculate the height E0 of the potential energy barrier. (MAY/JUNE 2012)
(or)
In a semiconductor at room temperature (300°K) the intrinsic carrier concentration and resistivity are
1.5 × 1016 cm3and 2 × 103 Ωm respectively. It is converted to an extrinsic semiconductor with a doping
concentration of 1020 / m3 for the extrinsic semiconductor. Calculate the
(i). Minority carrier concentration
(ii). Resistivity
(iii). Shift in fermi level due to doping
(iv). Minority carrier concentration when its temperature is increased to a value at which the intrinsic
carrier concentration n1 doubles.
Assume the mobility of majority and minority carriers to be the same and kT = 26 meV at room
temperature. (NOV/DEC 2009) / (NOV/DEC 2012)
(or)

Calculate the built potential barrier in a PN junction. Consider a silicon PN J junction at 300K with
doping densities NA = 1× 1018 cm-3and ND = 1× 1015 cm-3. Assume ni = 1.5× 1013 cm-3.

UNITED INSTITUTE OF TECHNOLOGY 20

 I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

(NOV/DEC 2012)
(or)

Determine the ideal reverse saturation current density in a silicon pn junction at T = 300K. Consider
the following parameters in the silicon pn junction: Na = Nd = 1016cm-3. ni = 1.5× 1010 cm-3, Dn = 25
cm2/s, Tp0 = Tp0 = 5× 10-7, Dp = 10 cm2/s, εr = 11.7 comment on the result. (MAY/JUNE 2015)
(or)
The reverse saturation of a silicon PN junction diode is 10 µA.Calculate thediode current for the
forward bias voltage of 0.6 V at 25°C. (MAY/JUNE2016)
(or)
The diode current is 0.6 m A when the applied voltage is 400 m V and 20 m A when the applied

voltage is 500 m V.Determine η.Assume . (MAY/JUNE 2016)

UNIT – II

BIPOLAR JUNCTION
NPN -PNP -Operations-Early effect-Current equations – Input and Output
characteristics of CE, CB, CC - Hybrid -π model - h-parameter model, Ebers Moll
Model- Gummel Poon-model, Multi Emitter Transistor.

Part - A

1. What is the need for biasing in the transistor? (MAY/JUNE 2014)

2. Draw the parameter model for CE transistor. (MAY/JUNE 2014)
3. Draw the input and output characteristics of a transistor in CE configuration and mark the cut off,
saturation and active region. (MAY/JUNE 2010)
4.Name the operating modes of a transistor. (NOV/DEC 2010)
(or)
What are the operating modes of BJT with reference to junction diode?
5.What are hybrid parameters? (NOV/DEC 2010)
(or)
Draw the h-parameter equivalent circuit of a CE BJT configuration. (NOV/DEC 2011)
(or)
State the “h” parameter equation for a NPN transistor under CE configuration. (MAY/JUNE2019)
6.Write the AC input impedance of a Darlington Transistor.
7.State the relation between α and β of a transistor. (NOV/DEC 2013)
(or)
Define αdc and βdc of a transistor. (MAY/JUNE 2014)
8.Calculate β of a transistor when α = 0.98. (NOV/DEC 2012)
(or)
For the transistor, if  β = 200,find the value of  α. (NOV/DEC 2019)

9.Calculate the collector and emitter current levels for a BJT with β dc = 0.99 and IB = 20 μA.

UNITED INSTITUTE OF TECHNOLOGY 21

 I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

(NOV/DEC 2014)
(or)

10. A transistor has β=150,find the collector and base current if I E = 10 m (MAY / JUNE 2016)
11. Among CE, CB and CC configurations, which one is the most popular? Why? (NOV / DEC 2012)
12. What is meant by Base Width Modulation? (MAY / JUNE 2016)
13. Define transition capacitance. (MAY / JUNE 2009)
14. Give short notes on diffusion capacitance (MAY / JUNE 2011)
(or)
Define diffusion capacitance. (NOV / DEC 2013)
15. What is large signal current gain? (MAY / JUNE 2009)
16. In a common base connect, the emitter current is 1 mA and α = 0.98. find the total collector current.
(NOV / DEC 2009)
17. Draw the equivalent circuit of CE and CC configuration of transistors. (MAY/ JUN 2011)
18. What is thermal runaway in semiconductor devices? (NOV / DEC 2011)
19. Why collector region of a transistor is large in area than emitter region? (MAY / JUNE 2012)
20. What is “Early effect” in CB configuration and give its consequences? (MAY / JUNE 2010)
(or)
Define and explain the term ‘Early effect’. (MAY / JUNE 2012)
(or)
Define early effect. (MAY/JUNE2017, NOV/DEC 2017, MAY/JUNE2018)
(or)
Define Early effect in BJT. (NOV / DEC 2015)
(or)
What is meant by “Early effect”? (MAY/JUNE2019)

21. Give the biasing arrangement for an NPN transistor to operate in the active region.
(MAY / JUNE 2013)
22. Draw the input characteristics of CB transistor. (NOV / DEC 2013)
23. Draw the common base configuration. (NOV / DEC 2016)
24. What is the major difference between a biploar and unipolar device? (NOV / DEC 2014)
25. Sketch the Ebers Moll model. (MAY / JUNE 2015)
26. What is multiple emitter transistors? Draw the symbol of that. (NOV / DEC 2015)
27. If a transistor has a α of 0.97.find the value of β. (MAY/JUNE2017)
28. Why BJT is called as current controlled device? (MAY/JUNE2018) (NOV/DEC 2019)
29. State the reason behind the popularity of common emitter configuration of BJT. (NOV/DEC 2017)

Part – B

Operation of Transistors:

1. Explain with neat diagram the operation of NPN transistor. (NOV / DEC 2013)
(or)
Justify transistor as an amplifier. (16) (MAY/JUNE2017)
(or)

UNITED INSTITUTE OF TECHNOLOGY 22

I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

Describe the working of PNP junctions. (MAY / JUNE 2015)

Comparison of CC, CE & CB Configurations:
2. Explain the characteristics of BJT in CC, CE, CB configurations and compare the performance of a
transistor in different configurations.
(MAY / JUNE 2012) / (NOV / DEC 2012) (MAY / JUNE 2014)
(or)
What is known as current amplification factor? Derive the relationship between the amplification
factor of CE,CB and CC configuration. (MAY/JUNE2017)
(or)

Present the circuit and explain the structure, operation and characteristics of CE, CB and CC
configurations. Compare their parameters and performances. (NOV / DEC 2009)
(or)
Analyze the two different functionality of BJT with appropriate equivalent circuit models.
(NOV/DEC 2017)
(or)
Discuss the three different configurations of BJT along with its characteristics and also highlight the
impact of base width modulation. (NOV/DEC 2017)
(or)
Compare CB, CE and CC with respect to dc and ac parameters. (NOV / DEC 2015)

CB Configuration:

3. Describe the static input and output characteristics of a CB transistor with neat circuit diagram.

(NOV / DEC 2010)

(or)
Draw the circuit for determining the transistor common base characteristics and explain how the
characteristics are measured and draw the graphs. (NOV/ DEC 2011)

(or)
Draw and explain the input and output characteristics of BJT with CB configuration.
(MAY / JUNE 2011)
(or)
Construct and demonstrate the working mechanism of CB configuration of BJT. (MAY/JUNE 2018)
(or)
Draw and explain the characteristics of PNP transistor in CB configuration. (MAY/JUNE 2013)
(or)

Draw the circuit of an NPN Junction transistor CB configuration and describe the static input and
output characteristics. Also define active, saturation and cut-off regions. (NOV/DEC 2015)
(or)
Explain input and output characteristics of CB configuration. (NOV/DEC 2016)
(or)
Draw a circuit diagram to determine the CB characteristics of NPN transistor. Also explain the input
and output characteristics. (MAY/JUNE2019)

UNITED INSTITUTE OF TECHNOLOGY 23

 I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

(or)
Explain the input and output characteristics of common base and common emitter configuration in
BJT. (NOV/DEC 2019)
(or)

The reverse leakage current of the transistor when connected in CB configuration is 0.2 m A and it is
18 µ A when same transistor is connected in CE configuration. Calculate αdc & ßdc of the transistor.
(Assume IB=30 m A) (MAY/JUNE2016)

CE Configuration:

4. Derive the expression for current gain, input impedance and voltage gain of a CE Transistor
Amplifier. (NOV/DEC 2010)

(or)

Explain the input and output characteristics of a CE transistor configuration. List out the comparisons
between CE, CB and CC configurations. (NOV/DEC 2013)
(or)
Explain the CE configuration of BJT in detail with required diagrams. (MAY/JUNE 2009)
(or)
Explain the principle and operation of CE transistor based amplifier and also compare CE, CB and
CC configurations. (NOV/DEC 2011)
(or)
Explain the input and output characteristics of common emitter configuration with a neat sketch.
(MAY / JUNE 2010) / (MAY / JUNE 2012)
(or)
Discuss the Input and Output characteristics of CE configuration. (MAY / JUNE 2015)
(or)
Draw the CE configuration of NPN transistor, and explain its input output characteristics with
suitable diagrams. (MAY/JUNE2016)
(or)

With neat diagram explain about input and output characteristics of common emitter configuration.

(NOV/DEC 2016)
(or)
Construct and demonstrate the working mechanism of CE configuration of BJT. (MAY/JUNE2018)
(or)
Explain the input and output characteristics of common base and common emitter configuration in
BJT. (NOV/DEC 2019)

Stability Factor:

5. Draw a voltage divider bias circuit and derive an expression for its stability factor.

UNITED INSTITUTE OF TECHNOLOGY 24

I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

(MAY / JUNE 2014)

Hybrid Parameters and Related Problems:
6. Draw the ‘h’ parameter equivalent circuit of a transistor in CE configuration.
(MAY / JUNE 2010)
(or)
Derive the h parameters for the CE. (NOV/DEC 2016)
With relevant expressions and sketch, describe h-parameter model. (MAY / JUNE 2015)
(or)
Draw the h parameter equivalent circuit for NPN transistor CE circuit. Define and derive for all
components. (NOV / DEC 2015)
(or)
For a common emitter circuit draw the h-parameter equivalent circuit and write the expressions for
input impedance, output impedance and voltage gain. (NOV / DEC 2011)
(or)
Define the hybrid parameters for a basic transistor circuit in CE configuration and give its hybrid
model. (NOV/DEC 2014)
(or)
Describe the methods of determination of h parameters from its static input and output characteristics.
(MAY /
JUNE 2010)
(or)
Draw the hybrid model of transistor in CE and CB configurations. Explain how h parameters
can be determined from the transistor characteristics. (NOV/DEC 2013)
(or)
Draw the hybrid – π model of BJT and obtain expressions for various parameters.
(MAY/JUNE 2014)
(or)
Distinguish between h-parameter and hybrid π model. (MAY/JUNE 2016)
(or)
A CB transistor amplifier driven by a voltage source V1 and internal resistance R1 = 1200 Ω. The
load impedance is a resistor RL of 1000 Ω. The ‘h’ parameters are given below
hib = 220 Ω hrb = 3 × 10-4
hfb = - 0.98 hob = 0.5 μA/V

Compute, current gain (Ai), Input Impedance (Ri), Voltage gain (Av), Output Impedance (Ro) and
Power gain (Ap). (NOV/DEC 2012)
(or)

How do you modify the structure of a simple BJT to operate it for 250 V and 7 A? Discuss the
characteristic of such a device and identify its limitations. (MAY/JUNE2019)
(or)

Derive the current gain, voltage gain, input impedance and output impedance in terms of hybrid
parameters for a BJT. (NOV/DEC 2019)
Switching Characteristics:

UNITED INSTITUTE OF TECHNOLOGY 25

 I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

7. Explain the switching characteristics of transistor with neat sketch. (MAY / JUNE 2010)

Relationship and comparison of α, ß and γ:

8. Give the relationship between α, ß and γ of a transistor.

(or)

Define and compare α, ß and γ. (MAY/JUNE 2009)

Early Effect:

9. Write short notes on Early effect. (NOV/DEC 2014)

(or)
With relevant expressions and figures, describe Early effect. (MAY/JUNE 2015)
Ebers – Moll Model:
10. Write short notes on Ebers – Moll Model for BJT. (NOV/DEC 2014)
(or)

Draw the Eber’s Moll model for a PNP transistor and explain its significance. (MAY/JUNE2017)
(or)
Design and analyze a NPN bipolar junction transistor using Eber Moll transistor model.
(MAY/JUNE2018)
Outline the Ebers – Moll model of a NPN transistor with necessary circuit and relevant equations.
(MAY/JUNE2019)
Gummel Poon Model:

11. Derive the expression for Gummel Poon model with a neat circuit diagram. (NOV/DEC 2016)

UNIT – III

FIELD EFFECT TRANSISTORS

JFETs – Drain and Transfer characteristics,-Current equations-Pinch off voltage and its
significance- MOSFET- Characteristics- Threshold voltage -Channel length modulation, D-
MOSFET, E-MOSFET- Characteristics – Comparison of MOSFET with JFET.
Part - A

1. In which region JFET acts as a resistor and why? (MAY / JUNE 2014)
(or)
When a FET acts as a voltage variable resistor? (NOV / DEC 2012)

2. Differentiate between JFET and BJT. (MAY / JUNE 2009)

(or)

State the difference between BJT and FET. (NOV/DEC 2017)

(or)

UNITED INSTITUTE OF TECHNOLOGY 26

I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

Mention the disadvantages of JFET compared to BJT. (NOV / DEC 2009)

(or)
Mention any two advantages of FET over BJT.
(or)
Compare any four feature of BJT with JFET. (MAY / JUNE 2009)
(or)
State the application and difference between BJT and FET. (MAY/JUNE2017)
(or)
Compare BJT and FET. (NOV / DEC 2011)(NOV / DEC 2012, MAY/JUNE2017)
3. Define amplification factor in JFET. (MAY / JUNE 2010)
4. Draw the high frequency model of JFET. (NOV / DEC 2010)
5. Mention the operating modes of MOSFET. (NOV / DEC 2010)
6. What is JFET and give its different modes of operation? (NOV / DEC 2016)
7. Give any two differences between E-MOSFET and D-MOSFET. (NOV / DEC 2011)
(or)
Differentiate between enhancement–type and depletion–type MOSFETs. (MAY / JUNE 2012)
8. Define pinch off voltage of JFET. (MAY / JUNE 2012) / (NOV / DEC 2012)
(or)
What is Pinch-off voltage? (MAY/JUNE2018)
9. Draw the drain characteristics of FET and indicate important operating regions.
(MAY /
JUNE 2014)
10. Compare BJT, FET and MOSFET. (MAY / JUNE 2014)
(or)
Compare MOSFET and FET. (MAY/JUNE 2016)
(or)
Give the basic difference between JFET and MESFET. (MAY/JUNE2019)
(or)
Differentiate between JFET and MOSFET. (NOV/DEC 2019)
11. Differentiate between N and P channel FETs.
(or)
Distinguish clearly the difference between N with P channel FETs. (MAY / JUNE 2010)
(or)
Compare P-channel and N-channel JFET. (NOV / DEC 2011)
12. Write some applications for JFET.
(or)
Give some applications of JFET. (MAY/JUNE 2016)
(or)
Mention the advantages of MOSFET over JFET. (NOV / DEC 2010)
13. Draw the symbol of P – Channel MOSFET. (MAY / JUNE 2011)
14. Write the equation for drain current of JFET. (MAY / JUNE 2013)
15. Define drain to source resistance of JFET. (NOV / DEC 2013)
16. Draw the structure and symbol for an N-channel JFET. (MAY / JUNE 2014)
17. Sketch the graph symbol for n-channel and p-channel MOSFET. (NOV / DEC 2014)

UNITED INSTITUTE OF TECHNOLOGY 27

I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

18. Draw the symbol for DUAL GATE MOSFET. (NOV / DEC 2014)
+
19. Assume that the p n Junction of a uniformly doped silicon n channel JFET at T = 300 K has doping
concentrations of Na = 1018 cm-3 and Nd = 1016 cm-3. Assume that the metallurgical channel thickness
α is 0.7 μm. Calculate the pinch off voltage. (MAY / JUNE 2015)
20. Calculate the internal Pinch off voltage of JFET with a=0.75×10 m, Nd=106/ cm3,εr = 11.6 and
-6

ε0=8.854×10-12 F/m. (MAY/JUNE2019)

21. What is meant by channel length modulation? (NOV / DEC 2015)(NOV/DEC 2019)
22. Draw the symbol of FINFET and Dual Gate MOSFET. (NOV / DEC 2015)
23. Draw the V-I characteristics curve of MOSFET.
24. Why it is called field effect transistor?
25. Why FET is called voltage controlled device.
26. Define the term threshold voltage.
27. Calculate the pinch off voltage of an n-channel JFET having following specification: T=300
k,Na=10^18 cm^-3,Nd=10^16 cm^-3 and metallurgical channel thickness a=0.75 µm.
(NOV/DEC 2017)
28. Evaluate the body effect coefficient (y) in a MOSFET with Na= 3×10 /cm , εr=11.6 and ε0=8.854×10-
16 3

12
F/m, Cox=1.726×10-7 F/cm2. (MAY/JUNE2019)

Part – B

FINFET and Dual Gate MOSFET:

1. Discuss about FINFET and Dual Gate MOSFET. (MAY / JUNE 2014)
JFET and Related Problems:

2. Explain the construction and working principle of a JFET and obtain its characteristics parameter.
(NOV /
DEC 2010)
(or)
Illustrate the working mechanism of JFET with necessary diagram. (MAY/JUNE2018)
(or)
Sketch and explain the construction of P-channel JFET. Give also its symbol. (MAY / JUNE 2012)
(or)
What is FET? Compare the N-channel and P-channel JFET with its operation.
(MAY / JUNE 2011)

(or)

A FET has the following parameters IDDS = 32 mA, VGS(off) = - 8 Volts, VGS = - 4.5 Volts find the
values of drain current. Sketch its typical characteristics. (MAY / JUNE 2010)

(or)

With neat diagram explain the construction, working principle and V-I characteristics of p-channel
JFET. (NOV / DEC 2015)
(or)

UNITED INSTITUTE OF TECHNOLOGY 28

I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

Explain the construction of an N-channel FET with a diagram. (MAY/JUNE2019)

(or)
Illustrate the construction and characteristics of N-Channel JFET. (NOV/DEC 2019)

The reverse gate voltage of JFET ,when the changes from 4.4 V to 4.2 V, The drain current changes
from 2.2 mA to 2.6 mA. The device parameters of JFET are maximum current I DSS =10 mA ,Pinch off
voltage,Vp=-4 V.Find out the value of transconductance of the transistor and drain current for VGS=-4
V. (NOV/DEC 2019)

JFET Applications:

3. Briefly describe some applications of JFET. (MAY / JUNE 2014)

(or)
Explain the application of FET as a voltage variable resistor. (MAY / JUNE 2010)

JFET and its Characteristics:

4. Explain how the transconductance of a JFET varies with drain current and gate voltage characteristics
and transfer characteristics. (MAY/JUNE 2010)
(or)
Describe the operation of common drain FET amplifier and derive the equation for voltage gain.

(NOV/DEC 2010)
(or)
Explain the four distinct regions of the output characteristics of the JFET. (MAY/JUNE 2014)
(or)
Derive an expression for drain current of FET in Pinch off region with necessary diagram.
(MAY/JUNE 2016)
(or)
Discuss the Drain and Transfer characteristics of JFETs. (MAY/JUNE 2015)
(or)

Sketch and explain drain and transfer characteristics of the P-channel JFET. (MAY/JUNE 2012)
(or)
Draw the circuit diagram for obtaining the drain and transfer characteristics for an N channel JFET.

(NOV/DEC 2014)

(or)
Explain the construction and operation of N-channel JFET with suitable diagram. (MAY/JUNE2017)
(or)
“Field Effect Transistor is a voltage controlled current device”-justify the statement by describing the
Characteristics of the device involving the impact various parameters such as pinch off voltage,
source drain voltage and gate source voltage. (NOV/DEC 2017)
(or)
Explain the construction of N channel JFET. Also explain the drain and transfer characteristics of the
same. (NOV/DEC 2012) / (MAY/JUNE 2013)

UNITED INSTITUTE OF TECHNOLOGY 29

I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

(or)
In the common drain FET amplifier. Evaluate the voltage gain V-A. (NOV/DEC 2010)
(or)
Discuss the effect of channel length modulation. (MAY/JUNE2017)
(or)
Draw the circuit diagram of common source FET amplifier and give the design steps to find the
component values used in the circuit. (16) (NOV/DEC 2011)
(or)
Derive an expression for pinch off voltage in FET. (MAY/JUNE2019)

MOSFET:

5. With the help of suitable diagrams explain the working of different types of MOSFET.

(MAY/JUNE 2010)
(or)
Explain the working of n-channel enhancement type MOSFET. (MAY/JUNE 2012)
(or)
Explain the operation of an enhancement type MOSFET. (NOV/DEC 2011)
(or)
Draw the structure of N-channel depletion type MOSFET and explain its operation and
characteristics. (MAY/JUNE 2013) / (NOV/DEC 2013) (MAY/JUNE 2016)
(or)
Explain the construction and working of enhancement MOSFET and depletion MOSFET. Draw the
characteristics. (NOV / DEC 2011)
(or)
Describe the working and characteristics of MOSFET, D MOSFET and E MOSFET.

(NOV/DEC 2016)
Explain, how does the construction and operation and also the characteristics of enhancement
MOSFET differ from depletion MOSFET. (MAY / JUNE 2009)
(or)
Draw the circuit and explain the operation and characteristics of Enhancement and Depletion mode
MOSFETS. (NOV/DEC 2009)
(or)
What is MOSFET? Explain the construction and working principle of enhancement mode and
depletion mode of MOSFET with neat diagram. (MAY/JUNE 2010)
(or)
Explain the operation of a Depletion mode MOSFET and its comparison over enhancement MOSFET
with neat diagrams. (NOV/DEC 2010)
(or)
Briefly explain the operation of enhancement and depletion type MOSFET. (MAY/JUNE 2011)
(or)
With neat diagram explain the operation of Depletion mode MOSFET and sketch the characteristics
curves. (NOV/DEC 2015)

UNITED INSTITUTE OF TECHNOLOGY 30

I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

(or)
Draw the low frequency equivalent model of FET. With a neat sketch, explain the construction and
characteristics of enhancement MOSFET. (NOV/DEC 2013)
(or)
Draw the high frequency equivalent model of FET with a neat sketch; explain the construction and
characteristics of depletion MOSFET. (NOV/DEC 2013)
(or)
Draw a circuit diagram of the cross section of an Enhancement MOSFET. Also discuss the Drain and
transfer characteristics for MOSFET. (NOV/DEC 2014)
(or)
With relevant sketches, explain the working mechanisms of enhancement and depletion MOSFET.
(NOV/DEC 2017)
(or)
What is known as metal oxide semiconductor field effect transistor? Explain its principles of
operation in enhancement mode with suitable diagram. (MAY/JUNE2017)
(or)
Explain the concept of Threshold voltage in MOSFET. (MAY/JUNE 2015)
(or)
Discuss the characteristics of MOSFET. (MAY/JUNE 2015)
(or)
Discuss your understanding on MOSFET detailing the types, construction and characteristics.
(MAY/JUNE2018)
(or)
Discuss the structure of an n channel depletion type MOSFET with a neat diagram.

(MAY/JUNE2019)
(or)
Describe the output and transfer characteristics of MOSFET. (MAY/JUNE2019)
(or)
Illustrate the construction and characteristics of N-Channel D-MOSFET. (NOV/DEC 2019)

Temperature Effect on MOSFET:

6. Explain briefly the effect of temperature on MOSFET. (MAY/JUNE 2012)
JFET Model:
7. Discuss on the following (NOV DEC 2012)
(i). JFET Small Signal model
(ii). Darlington Connection.
(or)
Define the following parameters of JFET. (NOV/DEC 2012)
1. Transconductance.
2. Drain resistance
3. Amplification factor
4. Power dissipation
8. Explain drain and transfer characteristics of JFET. (NOV/DEC 2016)

UNITED INSTITUTE OF TECHNOLOGY 31

I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

Dual Gate MOSFET:

9. Write short notes on Dual gate MOSFET. (MAY/JUNE2016)

(or)
Describe the concept of dual gate MOSFET. (MAY/JUNE 2015)

FINFET:

10. Write short notes on FINFET. (NOV/DEC 2016)

UNIT – IV

SPECIAL SEMICONDUCTOR DEVICES

Metal-Semiconductor Junction- MESFET, FINFET, PINFET, CNTFET, DUAL GATE

MOSFET, Schottky barrier diode-Zener diode-Varactor diode –Tunnel diode- Gallium
Arsenide device, LASER diode, LDR.

PART - A

1. Draw the energy band diagram of metal and semiconductor before and after conduction is made.
(MAY /
JUNE 2014)
(or)
Draw the energy band diagram of metal semiconductor junction after contact is made.
(MAY/JUNE2016)
2. What is Fin FET? (MAY/JUNE2018)
3. List out the applications of tunnel diode. (MAY / JUNE 2014)
(or)
Give some applications of tunnel diode. (MAY / JUNE 2010)
4. Differentiate between Zener breakdown and avalanche breakdown. (NOV / DEC 2011)
5. What is a metal semiconductor contact? (NOV/DEC 2016)
6. What are the two types of metal semiconductor contact?
7. What is a Ohmic contact? And Give the types of ohmic contact.
8. What is a tunnel diode?
(or)
What is tunneling effect in diodes? (NOV / DEC 2011)
(or)
What is tunneling phenomenon? (MAY / JUNE 2012) / (NOV / DEC 2012) (NOV/DEC 2016)
(or)
What is meant by tunneling? (MAY/JUNE2019)
9. Draw the equivalent circuit of tunnel diode. (MAY / JUNE 2009)
10. Give the advantages and disadvantages of tunnel diode.
(or)

UNITED INSTITUTE OF TECHNOLOGY 32

I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

Mention some advantages and disadvantages of Tunnel Diode. (MAY/JUNE 2016)

11. What is zener breakdown? (NOV / DEC 2011) / (NOV / DEC 2012)
(or)
What is meant by Zener effect? (MAY / JUNE 2012)
(or)
Define reverse breakdown voltage. (MAY / JUNE 2014)
12. What is a varactor diode?
13. Mention the applications of varactor diode. (NOV / DEC 2015)
(or)
Mention few applications of varactor diode. (MAY/JUNE2017)
14. What is a schottky diode?
15. Give the symbol, structure & equivalent circuit of schottky diode.
16. Give the applications of schottky diode.
17. Compare between schottky diode and conventional diode. (NOV / DEC 2016)
18. Write two applications of Zener diode. (MAY / JUNE 2014)
(or)
What is the specialty of Zener diode? (MAY / JUNE 2012)
19. What are the difference between a Tunnel diode and an ordinary PN JUNEction diode?
(NOV / DEC 2014) / (NOV / DEC 2015)
20. Mention the analog and digital applications of LDR. (NOV / DEC 2014)
21. What is the basic principle behind the LDR? (NOV / DEC 2015)
22. What is a MESFET? (MAY / JUNE 2015)
23. What is recovery time? Give its types. (NOV / DEC 2016)
24. Define Snell’s law. (NOV/DEC 2017)
25. State the significance of MOSFET devices. (NOV/DEC 2017)
26. Define Gunn effect.
(MAY/JUNE2017)
27. What is referred as CNTFET? (MAY/JUNE2018)
28. Differentiate CNTFET structure and traditional MOSFET structure. (NOV/DEC 2019)

Part – B

Zener Diode:

1. Draw the VI characteristics of Zener diode and explain its operation.

(MAY/JUNE 2012) (NOV/DEC 2013)
(or)
Sketch and explain the V-I characteristics of Zener diode. (NOV/DEC 2012)
(or)
Explain the working of a Zener diode and explain their VI characteristics.
(NOV/DEC 2013)
(or)
Draw the Zener diode characteristics and explain the working of Zener diode.
(MAY/JUNE 2010)

UNITED INSTITUTE OF TECHNOLOGY 33

I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

(or)
What is the breakdown mechanism found in Zener diode? Explain it with neat diagram.
(NOV /
DEC 2010)
(or)
Compare Zener diode with PN Junction diode. (NOV / DEC 2011)
(or)
Explain the operation of Zener diode and plot its characteristics. And discuss the effect of temperature on
reverse saturation current. (NOV / DEC 2011)
(or)

Draw the symbol of Zener diode and explain the V-I Characteristics of Zener diode and also derive the
current equation of a diode. (MAY / JUNE 2011)
(or)
Explain the V-I characteristics of Zener diode and distinguish between Avalanche and Zener Break
downs. (NOV / DEC 2014)
(or)
Explain V-I characteristics of Zener diode. (NOV/DEC 2016)
With neat diagram explain the operation of Zener diode and its characteristics.
(NOV / DEC 2015)
(or)
Discuss in detail about Zener and Tunnel diode. (MAY/JUNE2018)

Zener Diode and its Applications:

2. Explain the operation of Zener diode as voltage regulator. (MAY / JUNE 2014)
(or)
With a neat circuit diagram, explain the operation of Zener diode voltage regulator.
(MAY / JUNE 2009)
(or)
Draw the V-I characteristics of zener diode and explain its operation and also brief how it can be used as
a regulator. (MAY/JUNE2017)
(or)
Draw the Zener regulation circuit and explain its function for input regulation and output regulation.
(MAY /
JUNE 2010)
(or)
Explain the Zener diode shunt regulator. (NOV / DEC 2009)

Schottky Diode:
3. Write the short notes on Schottky diode. (MAY / JUNE 2014)
(or)
Draw the V-I characteristics of Schottky diode and explain its operation. (MAY/JUNE2017)
(or)
Narrate your understanding on various two terminal devices such as Schottky barrier diode,Zener
diode,Tunnel diode and Varactor diode (NOV/DEC 2017)
(or)

UNITED INSTITUTE OF TECHNOLOGY 34

I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

Sketch the basic construction and characteristics for a Schottky diode. Briefly explain the device
operation. (NOV / DEC 2015)
(or)
Deduce the expression for current voltage relation in a schottky barrier diode. (MAY/JUNE2019)
(or)
Explain the construction and working of Schottky barrier diode. (NOV/DEC 2019)

Varactor Diode:

4. Explain the principle behind the varactor diode and list out its application. (MAY/JUNE 2014)
(or)
Write notes on varactor diode. (MAY/JUNE 2013) / (MAY/JUNE 2015)
(or)
Explain the principle and operation of varactor Diode. (NOV / DEC 2014)
(or)
Briefly describe about the operation of varactor diode. (MAY/JUNE 2016)
(or)
Explain the working of varactor diode with its characteristic graph. (NOV/DEC 2019)

LASER Diode:
5. Give the details about the Laser diode. (MAY / JUNE 2014)
(or)
With neat diagram give the working principle of LASER diode.
(or)
Write short notes on LASER diode. (NOV/DEC 2011)
(or)
Briefly describe about the operation of Laser diode. (MAY/JUNE 2016)
(or)
Explain the working and characteristics of laser diode. (NOV/DEC 2016)
(or)
Explain the construction and working of LASER diode with characteristic graph. (NOV/DEC 2019)
Tunnel Diode:

6. What is tunneling phenomenon? Describe the V-I characteristics and concepts of tunnel diode with
application. (MAY/JUNE 2010)
(or)
What is meant by tunneling?Explain the V-I characteristics of a tunnel diode using energy band diagram.
(MAY/JUNE2016)
(or)
Describe the construction, the symbol, V-I characteristics and applications of tunnel diode.
(MAY/JUNE 2012) / (NOV/DEC 2013)
(or)
Discuss the construction and operation of a tunnel diode with neat energy band diagram.
(NOV / DEC 2010)
(or)
With energy band diagram, explain the theory and characteristics of tunnel diode.
(MAY / JUNE 2013)
(or)
Write short notes on Tunnel diode. (MAY / JUNE 2015)

UNITED INSTITUTE OF TECHNOLOGY 35

I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

(or)

Explain the operation of Tunnel diode and its characteristics with structural diagram.

(NOV / DEC 2015)

(or)

Explain the construction and volt ampere characteristics of tunnel diode. (NOV/DEC 2016)
(or)
Explain the principle of tunnel diode with necessary band diagrams. Also illustrate the V-I characteristics
and the negative resistance phenomenon. (MAY/JUNE2019)

LDR:

7. Describe the V-I characteristics of LDR. (NOV/DEC 2016)

(or)

With relevant sketches, explain the working mechanisms of Gallium Arsenic device and LDR.

(NOV/DEC 2017)

Metal Semiconductor Junction and Related Problems:

8. Present and explain the structure of current flow mechanism of Metal semiconductor Junction in
detail. (NOV / DEC 2012)
(or)

Describe the working of metal-semiconductor junction. (MAY/JUNE 2015)

(or)
Illustrate the operation of a MESFET with neat energy band diagram and space charge region.
(MAY/JUNE 2019)
(or)
Explain the construction and working of MESFET with its characteristic graph. (NOV/DEC 2019)
(or)
Consider an n-channel GaAs MESFET at T = 300 K with a gold Schokkty barrier contact. Assume the
barrier height is ΦBn = 0.89 V. The n-channel doping is Nd = 2×1015 cm-3. Determine the channel
thickness such that VT = + .25 V. also Nc = 4.7×1017 cm-3 and εr of GaAs = 13.1. (MAY/JUNE 2015)

UNIT – V
POWER DEVICES AND DISPLAY DEVICES
UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD,
Photo transistor, Opto Coupler, Solar cell, CCD.

PART -A

1. Draw the structure of TRIAC and its symbol. (MAY / JUNE 2014)
2. Draw the Symbol and equivalent circuit of TRIAC. (MAY/JUNE2018)
3. Draw the V-I characteristics of TRIAC. (MAY / JUNE 2011)
4. What are the Opto couplers? (NOV / DEC 2013)
5. Write down the significance of Opto coupler. (MAY / JUNE 2014)

UNITED INSTITUTE OF TECHNOLOGY 36

I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

(or)
State the advantages of opto coupler (Write any four). (MAY / JUNE 2010)
(or)

What is an optocoupler and where it is used? (NOV/DEC 2019)

6. What is the application of opto coupler? (NOV / DEC 2011)

7. Draw the circuit diagram of Opto Coupler. (NOV / DEC 2015)
8. What is intrinsic standoff ratio in UJT? (MAY / JUNE 2009) / (NOV / DEC 2011)
(or)
Write the expression for η for UJT. (MAY/JUNE 2012)
(or)
What do you understand by intrinsic standoff ratio in an UJT? (MAY/JUNE2019)
9. What are the advantages and limitations of LCD displays? (NOV/ DEC 2012)
(or)
Mention some advantages and disadvantages of LCD. (MAY/JUNE 2016)
10. Differentiate LED and LCD. (MAY/JUNE 2014)

(or)
Compare LED and LCD. (MAY/JUNE 2013)
(or)
What is LED and LCD? (MAY / JUNE 2011)
(or)
What is LED? (NOV / DEC 2013)

11. Mention the types of LCD's. (NOV/DEC 2019)

12. What is a DIAC? And Give some applications of DIAC. (MAY / JUNE 2014)
13. Give the symbol, structure and equivalent circuit of DIAC. (NOV / DEC 2016)
14. What is a SCR? And Give the basic construction and symbol of SCR.
15. Briefly explain why SCR cannot be used as a bidirectional switch. (NOV / DEC 2009)
16. How is ‘turn off’ of SCR made? (NOV / DEC 2009)
17. What is meant by regenerative action of SCR? (MAY/JUNE 2016)
18. Draw the two transistor model of an SCR with its characteristics curve.
(NOV/DEC 2010) (MAY/ JUNE 2013)
(or)
Draw the two transistor equivalent circuit of an SCR. (NOV/DEC 2014)

19. Compare SCR with TRIAC. (NOV/DEC 2016)

20. What is a thyristor?
21. What does UJT stands for? Justify the name UJT.
22. Give the symbol and structure of UJT.
23. Mention the applications of UJT.
24. What are the materials used in LEDs? (MAY/JUNE 2012)
25. Define quantum efficiency in an LED. (MAY/JUNE2019)
26. Expand: LASER and LDR. (MAY/JUNE 2015)
27. Outline the working principle of Light Dependent Resistor. (NOV/DEC 2019)
28. A solar cell is a pn Junction device with no voltage directly applied across the Junction. If it is so,
how does a solar cell deliver power to a load? (MAY/JUNE 2015)
29. What is the effect of temperature in solar cell? (MAY/JUNE2018)
30. What is the name implies VMOS? (NOV/DEC 2015)

UNITED INSTITUTE OF TECHNOLOGY 37

I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

31. Draw the basic structure of DIAC and its symbol. (MAY/JUNE2017)
32. Define holding current. (MAY/JUNE2017)
33. State the difference between DIAC and TRIAC. (NOV/DEC 2017)
34. Define conversion efficiency of solar cell. (NOV/DEC 2017)

Part – B
SCR:
1. Explain the operation, characteristics and applications of SCR. (MAY/JUNE 2014)
(or)
With neat sketch explain the SCR characteristics. (MAY/JUNE 2011)
(or)
Explain the working and operation of SCR and plot its characteristics. (NOV/DEC 2011)
(or)
Draw and describe the principle of operation and characteristics of SCR.
(NOV/DEC 2013)
(or)
Draw the V-I characteristics of SCR and explain its operation. Explain the terms Holding Current and
Latching Current. (MAY/JUNE 2014)
(or)
Discuss characteristics of silicon controlled rectifier, also with neat circuit explain how it can used as
battery charging regulator and temperature controller. (NOV/DEC 2017)
(or)
Draw and explain the two transistor equivalent model of SCR. (MAY/JUNE 2009) (JUNE 2011)
(or)
With the help of two transistor equivalent model, explain the working of SCR. Also explain the
regenerative action that takes place in SCR. (MAY/JUNE 2012)
(or)
Draw the transistor model of an SCR and describe the working principle of an SCR with V-I
characteristics. (MAY/JUNE2017)
(or)
Draw the circuit and the equivalent circuit of SCR. Explain its construction, working, characteristics,
advantages and applications. (NOV/DEC 2009)
(or)
Explain the operation of SCR with structural diagram and Draw the characteristics for a SCR.
(NOV/ DEC 2015)
(or)
Explain the operation and volt ampere characteristics of SCR. (NOV/DEC 2016)
(or)
Explain the working and characteristics of SCR and its applications. (MAY/JUNE2018)
(or)
Enumerate the structure of SCR. With for two transistor model derive an expression for anode current
also indicates V-I characteristics. (MAY/JUNE2019)
(or)
Illustrate the working of SCR with equivalent circuit and characteristic graph. (NOV/DEC 2019)

UJT:
2. Describe the operation of UJT and its emitter characteristics. (MAY/JUNE 2010)
(or)
Draw and explain the working and characteristics of UJT. (NOV/DEC 2013)
(or)

UNITED INSTITUTE OF TECHNOLOGY 38

I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

Explain the construction, equivalent circuit and operation of UJT. Draw the characteristics of UJT.

(MAY / JUNE 2012) / (NOV / DEC 2012) / (MAY / JUNE 2013)

(or)

Give the construction details of UJT & explain its operation with the help of equivalent circuits.
(NOV /
DEC 2014)
(or)

Draw the basic structure of UJT and explain V-I characteristics of UJT using equivalent circuit.

(MAY/JUNE 2016)
(or)

Illustrate the working of UJT with equivalent circuit and characteristic graph. (NOV/DEC 2019)

UJT and its Applications:

3. Explain the working of UJT as a relaxation oscillator with necessary wave forms and equations.
(NOV /
DEC 2011)
(or)
Explain how a UJT functions as Relaxation Oscillator. (NOV / DEC 2015)
(or)

Explain how UJT is used to generate saw tooth waveform. (NOV / DEC 2011)

(or)

Explain the negative resistance characteristics of Uni-junction transistor with neat sketch.

(MAY/JUNE 2010)

LED:

4. With neat diagram explain the construction and working of LED. (NOV/DEC 2011)
(or)
What is the basic principle behind an LED? Describe the operation and construction of LEDs.
(NOV/DEC 2012)
Outline the theory of light generation in light emitting diode, with necessary expressions for internal and
external Quantum efficiencies. (MAY/JUNE2019)
(or)
Enumerate the construction and operation of LED. (MAY/JUNE2018)
LCD:
5. Explain the working of LCD seven segment displays using square wave supply.
(NOV/DEC 2011)
(or)
Explain the construction and operation of LCD. (MAY/JUNE 2009)(NOV/DEC 2016)
(or)
Discuss the construction and operation of Dynamic scattering LCD and Field effect LCD.
(MAY/JUNE 2012)

UNITED INSTITUTE OF TECHNOLOGY 39

 I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

(or)
List out and explain the applications of LED and LCD. (NOV/DEC 2012)
(or)
Write short notes on LCD. (MAY / JUNE 2015) / (NOV/DEC 2015) (MAY/JUNE2017)
(or)
An indicator required Voltage to be displayed in seven segment format. However, the power requirement
for the display should be very low. Choose a proper display device and justify your choice. Also indicate
the characteristics and operating principle of such a display device. (MAY/JUNE2019)

Power Transistor:
6. Explain the construction, principle of operating, characteristics and applications of Power transistor.

(MAY/JUNE 2013)

Opto Coupler:

7. Explain the construction, principle of operating, characteristics and applications of Opto coupler.

(NOV/DEC 2012)
(or)
Explain the important characteristics of Opto coupler.
(or)
Write short notes on : Opto coupler. (MAY/JUNE2017)
(or)
Explain your understanding on various pnpn devices such as photo transistor,opto-couplers,solar cells and
CCD. (NOV/DEC 2017)
(or)
Write short notes on Opto couplers with necessary sketches. (NOV/DEC 2014)

TRIAC:
8. Draw and explain the V-I characteristics of TRIAC. (MAY/JUNE 2009)
(or)
Draw the V-I characteristics of TRIAC and explain its operation. (MAY/JUNE2016)

DIAC:
9. Explain the construction, principle of operating, characteristics and applications of DIAC.
(NOV/DEC 2011)
(or)
Sketch the symbol of DIAC and explain its operation and characteristics.
(MAY/JUNE 2012) / (NOV/DEC 2012)
(or)
Draw the V-I characteristics of DIAC and explain its operation. (MAY/JUNE2016)

Solar Cell:
10. Explain the construction, principle of operating, characteristics and applications of Solar Cell.

(MAY/JUNE 2014)

CCD:

UNITED INSTITUTE OF TECHNOLOGY 40

I YEAR ELECTRONICS & COMMUNICATION ENGINEERING EVEN SEMESTER

11. Explain the construction, principle of operating, characteristics and applications of CCD.
(NOV/DEC 2009)
(or)
Write short notes on CCD with necessary sketches. (NOV/DEC 2014)
(or)
Write short notes on CCD. (MAY / JUNE 2015)(NOV / DEC 2015)

Photo transistor:

12. Write short notes on Photo transistor with necessary sketches. (NOV/DEC 2014)
(or)
Describe the working of photo transistor. (NOV/DEC 2016)

Power BJT:

13. Write short notes on Power BJT. (MAY/JUNE 2015)

Power MOSFET:

14. Write short notes on Power MOSFET. (MAY/JUNE 2015)

DMOS:

15. Explain the working and characteristics of DMOS. (NOV/DEC 2016)

UNITED INSTITUTE OF TECHNOLOGY 41