PD - 94625B

SMPS IGBT IRGP50B60PD1

WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
C VCES = 600V
Applications VCE(on) typ. = 2.00V
• Telecom and Server SMPS @ VGE = 15V IC = 33A
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies Equivalent MOSFET
• Consumer Electronics Power Supplies G
Parameters
RCE(on) typ. = 61mΩ
Features E
ID (FET equivalent) = 50A
• NPT Technology, Positive Temperature Coefficient n-channel
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
E
C
Benefits G
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses TO-247AC
• Higher Switching Frequency up to 150kHz

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 75
IC @ TC = 100°C Continuous Collector Current 45
ICM Pulse Collector Current (Ref. Fig. C.T.4) 150
ILM Clamped Inductive Load Current d 150 A
IF @ TC = 25°C Diode Continous Forward Current 40
IF @ TC = 100°C Diode Continous Forward Current 15
IFRM Maximum Repetitive Forward Current e 60
VGE Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 390 W
PD @ TC = 100°C Maximum Power Dissipation 156
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.32 °C/W
RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 1.7
RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
Weight ––– 6.0 (0.21) ––– g (oz)

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IRGP50B60PD1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.31 — V/°C VGE = 0V, IC = 1mA (25°C-125°C)
RG Internal Gate Resistance — 1.7 — Ω 1MHz, Open Collector
— 2.00 2.35 IC = 33A, VGE = 15V 4, 5,6,8,9

VCE(on) Collector-to-Emitter Saturation Voltage — 2.45 2.85 V IC = 50A, VGE = 15V

— 2.60 2.95 IC = 33A, VGE = 15V, TJ = 125°C
— 3.20 3.60 IC = 50A, VGE = 15V, TJ = 125°C
VGE(th) Gate Threshold Voltage 3.0 4.0 5.0 V IC = 250µA 7,8,9
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -10 — mV/°C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance — 41 — S VCE = 50V, IC = 33A, PW = 80µs
ICES Collector-to-Emitter Leakage Current — 5.0 500 µA VGE = 0V, VCE = 600V
— 1.0 — mA VGE = 0V, VCE = 600V, TJ = 125°C
VFM Diode Forward Voltage Drop — 1.30 1.70 V IF = 15A, VGE = 0V 10

— 1.20 1.60 IF = 15A, VGE = 0V, TJ = 125°C

IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V, VCE = 0V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig
Qg Total Gate Charge (turn-on) — 205 308 IC = 33A 17

Qgc Gate-to-Collector Charge (turn-on) — 70 105 nC VCC = 400V CT1

Qge Gate-to-Emitter Charge (turn-on) — 30 45 VGE = 15V

Eon Turn-On Switching Loss — 255 305 IC = 33A, VCC = 390V CT3

Eoff Turn-Off Switching Loss — 375 445 µJ VGE = +15V, RG = 3.3Ω, L = 200µH
Etotal Total Switching Loss — 630 750 TJ = 25°C f
td(on) Turn-On delay time — 30 40 IC = 33A, VCC = 390V CT3

tr Rise time — 10 15 ns VGE = +15V, RG = 3.3Ω, L = 200µH

td(off) Turn-Off delay time — 130 150 TJ = 25°C f
tf Fall time — 11 15
Eon Turn-On Switching Loss — 580 700 IC = 33A, VCC = 390V CT3

Eoff Turn-Off Switching Loss — 480 550 µJ VGE = +15V, RG = 3.3Ω, L = 200µH 11,13

Etotal Total Switching Loss — 1060 1250 TJ = 125°C f WF1,WF2

td(on) Turn-On delay time — 26 35 IC = 33A, VCC = 390V CT3

tr Rise time — 13 20 ns VGE = +15V, RG = 3.3Ω, L = 200µH 12,14

td(off) Turn-Off delay time — 146 165 TJ = 125°C f WF1,WF2

tf Fall time — 15 20
Cies Input Capacitance — 3648 — VGE = 0V 16

Coes Output Capacitance — 322 — VCC = 30V

Cres Reverse Transfer Capacitance — 56 — pF f = 1Mhz
Coes eff. Effective Output Capacitance (Time Related) g — 215 — VGE = 0V, VCE = 0V to 480V 15

Coes eff. (ER) Effective Output Capacitance (Energy Related) g — 163 —

TJ = 150°C, IC = 150A 3

RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2

Rg = 22Ω, VGE = +15V to 0V

trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C IF = 15A, VR = 200V, 19

— 74 120 TJ = 125°C di/dt = 200A/µs

Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C IF = 15A, VR = 200V, 21

— 220 600 TJ = 125°C di/dt = 200A/µs

Irr Peak Reverse Recovery Current — 4.0 6.0 A TJ = 25°C IF = 15A, VR = 200V, 19,20,21,22

— 6.5 10 TJ = 125°C di/dt = 200A/µs CT5

Notes:
 RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
‚ VCC = 80% (VCES), VGE = 20V, L = 28 µH, RG = 22 Ω.
ƒ Pulse width limited by max. junction temperature.
„ Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
… Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
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 IRGP50B60PD1
90 450

80 400

70 350

60 300

Ptot (W)
50 250
IC (A)

40 200

30 150

20 100

10 50

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
T C (°C) T C (°C)

Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature

1000 200
VGE = 15V
180
VGE = 12V
160 VGE = 10V
VGE = 8.0V
140
100 VGE = 6.0V
120
ICE (A)
IC A)

100
80
10
60
40
20
1 0
10 100 1000 0 1 2 3 4 5 6 7 8 9 10
VCE (V) VCE (V)

Fig. 3 - Reverse Bias SOA Fig. 4 - Typ. IGBT Output Characteristics

TJ = 150°C; VGE =15V TJ = -40°C; tp = 80µs
200 200

180 VGE = 15V 180 VGE = 15V

VGE = 12V 160 VGE = 12V
160
VGE = 10V VGE = 10V
140 VGE = 8.0V 140 VGE = 8.0V
VGE = 6.0V VGE = 6.0V
120 120
ICE (A)
ICE (A)

100 100

80 80

60 60

40 40

20 20

0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs TJ = 125°C; tp = 80µs
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IRGP50B60PD1
900 10

800 T J = 25°C 9
T J = 125°C
700 8

600 7
ICE = 15A

VCE (V)
500 6
ICE (A)

ICE = 33A
400 5 ICE = 50A
300 4

200 T J = 125°C 3

100 T J = 25°C 2

0 1
0 5 10 15 20 0 5 10 15 20
VGE (V) VGE (V)

Fig. 7 - Typ. Transfer Characteristics Fig. 8 - Typical VCE vs. VGE

VCE = 50V; tp = 10µs TJ = 25°C

10 100

8 urrent -I (A)
F

7
ICE = 15A
rdC
VCE (V)

6
ICE = 33A
a

10
orw

5 ICE = 50A
ousF

TJ = 150°C
4
Instantane

TJ = 125°C

TJ = 25°C
3

1 1
0.8 1.2 1.6 2.0 2.4
0 5 10 15 20 Forward Voltage Drop - V FM (V)

VGE (V)

Fig. 9 - Typical VCE vs. VGE Fig. 10 - Maximum. Diode Forward

TJ = 125°C Characteristics tp = 80µs

1200 1000

1000
Swiching Time (ns)

800
tdOFF
Energy (µJ)

EON
600 100
EOFF
400
tF
tdON
200
tR
0 10
0 10 20 30 40 50 60 0 10 20 30 40 50 60
IC (A) IC (A)

Fig. 11 - Typ. Energy Loss vs. IC Fig. 12 - Typ. Switching Time vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V. TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3) Diode clamp used: 30ETH06 (See C.T.3)
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 IRGP50B60PD1
1000 1000

900

800
tdOFF

Swiching Time (ns)

EON
Energy (µJ)

700
100
600 EOFF

500 tdON

400 tF
tR
300 10
0 5 10 15 20 25 0 5 10 15 20 25

RG (Ω) RG (Ω)

Fig. 13 - Typ. Energy Loss vs. RG Fig. 14 - Typ. Switching Time vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3) Diode clamp used: 30ETH06 (See C.T.3)
40 10000

Cies

30
1000
Capacitance (pF)
Eoes (µJ)

Coes
20

100
10 Cres

0 10
0 100 200 300 400 500 600 700 0 20 40 60 80 100
VCE (V) VCE (V)

Fig. 15- Typ. Output Capacitance Fig. 16- Typ. Capacitance vs. VCE
Stored Energy vs. VCE VGE= 0V; f = 1MHz

16 1.4

14

12 400V
Normalized V CE(on) (V)

1.2
10
VGE (V)

6
1.0
4

0 0.8
0 50 100 150 200 250 -50 0 50 100 150 200
Q G , Total Gate Charge (nC) T J (°C)

Fig. 17 - Typical Gate Charge vs. VGE Fig. 18 - Normalized Typ. VCE(on)
ICE = 33A vs. Junction Temperature
IC = 33A, VGE= 15V
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IRGP50B60PD1
100 100

VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C

80

I F = 30A

I IRRM - (A)
t rr - (ns)

I F = 30A
IF = 15A
60 10
I F = 15A

40
I F = 5.0A

I F = 5.0A

20 1
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)

Fig. 19 - Typical Reverse Recovery vs. dif/dt Fig. 20 - Typical Recovery Current vs. dif/dt

800 1000
VR = 200V
VR = 200V
TJ = 125°C
TJ = 125°C
TJ = 25°C
TJ = 25°C

600
di(rec)M/dt - (A/µs)

IF = 30A
Q RR - (nC)

I F = 5.0A
400
I F = 15A I F = 15A

I F = 30A
IF = 5.0A

200

0 100
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)

Fig. 21 - Typical Stored Charge vs. dif/dt Fig. 22 - Typical di(rec)M/dt vs. dif/dt,

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 IRGP50B60PD1
1

D = 0.50
Thermal Response ( Z thJC )

0.1
0.20
0.10
0.05 R1 R2
R1 R2 Ri (°C/W) τi (sec)
0.01 τJ
0.01 τJ
τC
τ 0.157 0.000346
τ1
0.02 τ1
τ2
τ2 0.163 4.28
Ci= τi/Ri
SINGLE PULSE Ci i/Ri
0.001
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10

t1 , Rectangular Pulse Duration (sec)

Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10
Thermal Response ( Z thJC )

1 D = 0.50
0.20
0.10
R1 R2 R3
0.05 R1 R2 R3 Ri (°C/W) τi (sec)
0.1 τJ
τJ τC
τ
0.363 0.000112
0.01 τ1 τ2 τ3
0.02
τ1 τ2 τ3 0.864 0.001184
Ci= τi/Ri 0.473 0.032264
0.01 Ci τi/Ri
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

1000
IC, Collector-to-Emitter Current (A)

100

10 100µsec

0.1 1msec
Tc = 25°C
Tj = 150°C
Single Pulse 10msec
0.01
1 10 100 1000 10000
VCE , Collector-to-Emitter Voltage (V)

Fig. 25 - Forward SOA, TC = 25°C; TJ ≤ 150°C

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IRGP50B60PD1
L

L
VCC
DUT 80 V DUT
0 480V
1K Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

VCC
PFC diode L R=
ICM

DUT /
VCC
DRIVER DUT VCC
Rg Rg

Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit

REVERSE RECOVERY CIRCUIT

VR = 200V

0.01 Ω
L = 70µH
D.U.T.

D
dif/dt
ADJUST IRFP250
G

Fig. C.T.5 - Reverse Recovery Parameter

Test Circuit

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 IRGP50B60PD1
600 60 450 90
550
400 80
500 50
90% ICE
450 350 70
400 tf 40 300 60
tr
350 TEST CURRENT
90% ICE 250 50
300 30
VCE (V)

VCE (V)
ICE (A)

I CE (A)
250 200 40
200 20
5% V CE 150 30
150 5% V CE
100 10 100 20
5% ICE 10% ICE
50 50 10
0 0
-50 0 0
Eoff Eon Loss
-100 -10 -50 -10
-0.20 0.00 0.20 0.40 -0.10 0.00 0.10 0.20
Time (µs) Time(µs)

Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 25°C using Fig. CT.3 @ TJ = 25°C using Fig. CT.3

3
trr
IF
ta tb
0

4
Q rr
2
I RRM 0.5 I RRM
di(rec)M/dt 5

0.75 I RRM

1 di f /dt

1. dif/dt - Rate of change of current 4. Qrr - Area under curve defined by trr
through zero crossing and IRRM
trr X IRRM
2. IRRM - Peak reverse recovery current Qrr =
2
3. trr - Reverse recovery time measured
from zero crossing point of negative 5. di(rec)M/dt - Peak rate of change of
going IF to point where a line passing current during tb portion of trr
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current

Fig. WF3 - Reverse Recovery Waveform and

Definitions

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IRGP50B60PD1
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)

TO-247AC package is not recommended for Surface Mount Application.

TO-247AC Part Marking Information

EXAMPLE: THIS IS AN IRFPE30
WITH AS SEMBLY PART NUMBER
LOT CODE 5657 INT ERNATIONAL
AS SEMBLED ON WW 35, 2000 RECTIFIER IRFPE30

IN THE AS SEMBLY LINE "H" LOGO 035H

56 57
Note: "P" in assembly line DATE CODE
position indicates "Lead-Free" AS SEMBLY YEAR 0 = 2000
LOT CODE WEEK 35
LINE H

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 1/06

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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/