PD -9.

1484B

IRF9Z24N
HEXFET® Power MOSFET
l Advanced Process Technology D
l Dynamic dv/dt Rating VDSS = -55V
l 175°C Operating Temperature
l Fast Switching RDS(on) = 0.175Ω
l P-Channel G
l Fully Avalanche Rated
ID = -12A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 TO-220AB
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -12
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -8.5 A
IDM Pulsed Drain Current  -48
PD @TC = 25°C Power Dissipation 45 W
Linear Derating Factor 0.30 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 96 mJ
IAR Avalanche Current -7.2 A
EAR Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt ƒ -5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 3.3
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62

8/27/97
IRF9Z24N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, I D = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.175 Ω VGS = -10V, I D = -7.2A „
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS , ID = -250µA
gfs Forward Transconductance 2.5 ––– ––– S VDS = -25V, I D = -7.2A
––– ––– -25 VDS = -55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -250 VDS = -44V, VGS = 0V, T J = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V
I GSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 19 ID = -7.2A
Q gs Gate-to-Source Charge ––– ––– 5.1 nC VDS = -44V
Q gd Gate-to-Drain ("Miller") Charge ––– ––– 10 V GS = -10V, See Fig. 6 and 13 „
t d(on) Turn-On Delay Time ––– 13 ––– VDD = -28V
tr Rise Time ––– 55 ––– I D = -7.2A
ns
t d(off) Turn-Off Delay Time ––– 23 ––– RG = 24Ω
tf Fall Time ––– 37 ––– RD = 3.7Ω, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 350 ––– VGS = 0V

Coss Output Capacitance ––– 170 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 92 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– -12

(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– -48
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -7.2A, VGS = 0V „
t rr Reverse Recovery Time ––– 47 71 ns TJ = 25°C, IF = -7.2A
Q rr Reverse RecoveryCharge ––– 84 130 µC di/dt = -100A/µs „
t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 3.7mH
RG = 25Ω, IAS = -7.2A. (See Figure 12)
ƒ ISD ≤ -7.2A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
 IRF9Z24N

100 100
VGS 2 0µ s PU LS E W ID TH VGS
TOP - 15V TOP - 15V
- 10V TJ
c = 2 5°C - 10V
- 8.0V - 8.0V
- 7.0V - 7.0V
-ID , D ra in -to -S o u rce C u rre n t (A )

-ID , D ra in -to -S o u rc e C u rre n t (A )

- 6.0V - 6.0V
- 5.5V - 5.5V
- 5.0V - 5.0V
BOTT OM - 4. 5V BOTT OM - 4. 5V

10 10

-4.5 V 20 µ s PU LSE W ID TH
-4.5 V TCJ = 1 75°C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
-VD S , Drain-to-Source Voltage (V) -VD S , Drain-to-Source V oltage (V )

Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics,

100 2.0
I D = -12 A
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
- I D , D ra in-t o-S o urc e C urre nt (A )

1.5
(N o rm a li ze d )

TJ = 2 5 °C
10 TJ = 1 7 5 °C 1.0

0.5

V DS = -2 5 V
2 0 µ s P U L S E W ID T H VG S = -10 V
1 0.0 A
A -60 -40 -20 0 20 40 60 80 100 120 140 160 180
4 5 6 7 8 9 10

-VG S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRF9Z24N

700 20
V GS = 0V , f = 1MH z I D = -7.2 A
C is s = C gs + C g d , Cds SH OR TED

-V G S , G a te -to -S o u rc e V o lta g e (V )
600 C rs s = Cgd V DS = -4 4V
C os s = C ds + C gd 16 V DS = -2 8V
C , C a p a c ita n c e (p F )

500
C is s
12
400 C os s

300
8

200 C rs s
4
100
FO R TEST C IR C U IT
SEE F IGU R E 1 3
0 A 0 A
1 10 100 0 5 10 15 20 25
V D S , Drain-to-Source V oltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
O PER ATIO N IN TH IS AR EA LIM ITED
BY R D S(o n)
-IS D , R e ve rse D ra in C u rre n t (A )

1 0µs
-I D , D ra in C u rre n t (A )

TJ = 1 50°C
10

TJ = 25 °C
10 100µ s

1m s
T C = 2 5°C
T J = 1 75°C
VG S = 0 V Sin gle Pu lse 10m s
0.1 A 1 A
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100
-VS D , S ource-to-Drain V oltage (V ) -VD S , Drain-to-Source V oltage (V )

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRF9Z24N

12
RD
VDS

VGS
D.U.T.
-ID , D ra i n C u rre n t (A m p s )

9 RG -
+ VDD

-10V
6 Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

3

td(on) tr t d(off) tf
VGS

0 A 10%
25 50 75 100 125 150 175
TC , C ase T emperature (°C)

90%
Fig 9. Maximum Drain Current Vs. VDS
Case Temperature
Fig 10b. Switching Time Waveforms

10
T herm al R esponse (Z th J C )

D = 0 .5 0
1
0 .2 0

0 .1 0

0 .0 5
0 .0 2 PDM
0 .0 1
0.1
t
S IN G LE P U L S E 1
(T H E R M A L R E S P O N S E ) t
2
Notes :
1. D uty fac tor D = t /t
1 2
2. P ea k TJ = P DM x Z th JC + T C
0.01 A
0.00001 0.0001 0.001 0.01 0.1 1

t 1 , R ectan gular P ulse D uratio n (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF9Z24N

L 250
VDS ID

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
TO P -2.9A
-5.1 A
RG D .U .T 200 B OTTO M -7.2 A
VD D
IA S A
- 20V D R IV E R
tp 0 .0 1 Ω
150

100
15V

Fig 12a. Unclamped Inductive Test Circuit 50

0 A
I AS 25 50 75 100 125 150 175
Starting T J , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

tp
V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ
QG 12V .2µF
.3µF
-10V -
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRF9Z24N
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* • Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• I SD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period
[ ] ***
VGS=10V

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt [ ]
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
[ ]
Ripple ≤ 5% ISD

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS

IRF9Z24N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )
1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 )
1 0 . 5 4 (. 4 1 5 ) 3 . 7 8 (. 1 4 9 ) -B -
1 0 . 2 9 (. 4 0 5 ) 3 . 5 4 (. 1 3 9 ) 4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )
-A - 1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )
6 . 4 7 (. 2 5 5 )
6 . 1 0 (. 2 4 0 )
4
1 . 1 5 ( .0 4 5 ) L E A D A S S IG N M E N T S
M IN 1 - G A TE
1 2 3 2 - D R AIN
3 - SO URCE
4 - D R AIN
4 . 0 6 (. 1 6 0 )
3 . 5 5 (. 1 4 0 )

0 . 9 3 ( .0 3 7 ) 0 . 5 5 (. 0 2 2 )
3 X 0 . 6 9 ( .0 2 7 ) 3X
1 .4 0 (. 0 5 5 ) 0 . 4 6 (. 0 1 8 )
3X
1 .1 5 (. 0 4 5 ) 0 .3 6 (. 0 1 4 ) M B A M 2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B .
2 C O N T R O L L I N G D IM E N S IO N : I N C H 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .

Part Marking Information

TO-220AB
E XPLE
E X AM AM PLE
: T:HI TSHIISS AISN AIRF
N 1010
IRF 1010
W ITWH ITAHS SAESMB
S ELY
MB LY A A
LO TLOCO T DE
CO DE 9B 1M
9B 1M INRTE
IN TE NARTNA T ION
ION AL AL P A RT
P A RT NU
NU M BEMRBE R
R ECRTEC T IF IER
IF IER
IR F IR F 1010
1010
LO GO
LO GO 9246 9246
9B 9B1M 1M D A TE
D A TE C ODCEOD E
A S SAEM
S SBEM
LYB LY (Y YW W ) W )
(Y YW
LO T
LO T CO DE CO DE
Y Y Y=Y YE
= AYE
R AR
W WW =W W= EW EKE EK

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http://www.irf.com/ Data and specifications subject to change without notice. 8/97
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