SEMICONDUCTOR KTA1241

TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR

STROBO FLASH APPLICATION.

HIGH CURRENT APPLICATION.
B D

FEATURES
hFE=100 320 (VCE=-2V, IC=-0.5A).

A
hFE=70(Min.) (VCE=-2V, IC=-4A). P DIM MILLIMETERS
DEPTH:0.2 A 7.20 MAX
Low Collector Saturation Voltage. C
B 5.20 MAX
C 0.60 MAX

G
S
: VCE(sat)=-0.5V (IC=-3A, IB=-75mA). Q D 2.50 MAX
E 1.15 MAX
High Power Dissipation : PC=1W. K
F 1.27

R
G 1.70 MAX
F F H 0.55 MAX
J 14.00 +_ 0.50
K 0.35 MIN
H H H
L _ 0.10
0.75 +
E M 4
MAXIMUM RATING (Ta=25 ) M M
N 25
O 1.25
CHARACTERISTIC SYMBOL RATING UNIT

D
1 2 3 L

O
H P Φ1.50
Q 0.10 MAX
Collector-Base Voltage VCBO -35 V N N
R _ 0.50
12.50 +
1. EMITTER
S 1.00
Collector-Emitter Voltage VCEO -20 V 2. COLLECTOR

VEBO 3. BASE
Emitter-Base Voltage -8 V
Collector Current IC -5 A
TO-92L
Base Current IB -0.5 A
Collector Power Dissipation PC 1 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-8V, IC=0 - - -100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -20 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -8 - - V
hFE(1) (Note) VCE=-2V, IC=-0.5A 100 - 320
DC Current Gain
hFE(2) VCE=-2V, IC=-4A 70 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-3A, IB=-75mA - - -0.5 V
Base-Emitter Voltage VBE VCE=-2V, IC=-4A - - -1.5 V
Transition Frequency fT VCE=-2V, IC=-0.5A - 170 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 62 - pF
Note : hFE Classification O:100 200, Y:160 320

1994. 3. 23 Revision No : 0 1/2

 KTA1241

1994. 3. 23 Revision No : 0 2/2