Multiple Choice Questions on

Band Theory of Solids

By J.R.Ansari, Ph.D., PDM University

MCQ
Ques.1. The resistivity of a semiconductor ____________ conductors and insulators
1. More than that of
2. Lies between that of
3. Less than that of
4. None of the above
Answer.2. Lies between that of

Ques.2. A semiconductor is formed by __________ bonds

1. Covalent
2. Electrovalent
3. Co-ordinate
4. None of the above
Answer.1. Covalent

Ques.3. The most commonly used semiconductor is _________

1. Germanium
2. Carbon
3. Sulfur
4. Silicon
Answer.4. Silicon

Ques.4. In a semiconductor, the energy gap between the valence band and conduction
band is about________
1. 5 eV
2. 10 eV
3. 15 eV
4. 1 eV
Answer.4. 1eV
Ques.5. A semiconductor has ____________ temperature coefficient of
resistance.

1. Negative
2. Positive
3. Zero
4. None of the above

Answer.1. Negative

Ques.6. A semiconductor generally has ____________ valence electrons

1. 2
2. 3
3. 4
4. 6

Answer.3. 4

Ques.7. The resistivity of pure germanium under the standard condition is about

1. 6 × 104 Ω cm
2. 60 Ω cm
3. 3 × 10−3 Ω cm
4. 6 × 10−4 Ω cm

Answer.2. 60 Ω cm

Ques.8. The resistivity of pure silicon is about___________

1. 100 Ω cm
2. 60,000 Ω cm
3. 3 × 106 Ω cm
4. 1.6 × 10−8 Ω cm

Answer.2. 60,000 Ω cm

Ques.9. When a pure semiconductor is heated, it’s resistance_______

1. Goes down
2. Goes up
3. Remains the same
4. None of the above

Answer.1. Goes down

Ques.10. The strength of a semiconductor crystal comes from______

1. Forces between nuclei

2. Force between protons
3. Electrons-Pairs bonds
4. None of the above

Answer.3. Electrons-Pairs bonds

Ques.11. When a pentavalent impurity is added to a pure semiconductor it

becomes______
1. Intrinsic
2. n-type
3. p-type
4. None of the above
Answer.2. n-type

Ques.12. Addition of pentavalent impurity to semiconductors creates many______

1. Free Electrons
2. Holes
3. Valence electrons
4. Bound electrons
Answer.1. Free Electrons

Ques.13. A pentavalent impurity has________

1. 3 Valence electrons
2. 6 Valence electrons
3. 4 Valence electrons
4. 5 Valence electrons
Answer.4. 5 Valence electrons

Ques.14. An n-type semiconductor is

1. Positively charged
2. Electrically neutral
3. Negatively charged
4. None of the above
Answer.2. Electrically neutral

Ques.15. A trivalent impurity has_____

1. 3 Valence electrons
2. 5 valence electrons
3. 6 valence electrons
 4. 4 valence electrons
Answer.1. 3 Valence electrons

Ques.16. Addition of trivalent impurity to a pure semiconductor creates

many________
1. Free Electrons
2. Valence electrons
3. Holes
4. Bound electrons
Answer.3. Holes

Ques.17. A hole in a semiconductor is defined as_________

1. A free electrons
2. The incomplete part of an electrons pair bond
3. A free proton
4. A free neutron

Answer.2. The incomplete part of an electrons pair bond

Ques.18. A pentavalent impurity is called_______

1. Donor impurity
2. Acceptor impurity
3. Ionic impurity
4. None of the above
Answer.1. Donor impurity

Ques.19. The magnitude of the charge of a hole is

1. Zero
2. Equal to that of a proton
3. Equal to that of an electron
4. Equal to that of a neutron
Answer.1. Equal to that of an electron

Ques.20. As a general rule, holes are found only in_______

1. Metals
2. Semiconductor
3. Insulator
4. Resistance materials
Answer.2. Semiconductor

Ques.21.Hall voltage is zero when the semiconductor is

A.Extrinsic
B.Intrinsic
C.'P' type
D.None of the above

Answer: A.Extrinsic
Ques.22.. In any specimen, the Hall voltage is proportional to

A.(Current through specimen)2

B.Current through specimen
C.None of the above
D. All of the above

Answer:B.Current through specimen

Ques.23.. Hall effect can be used to measure

A.Magnetic field intensity

B.Electric field intensity
C.Carrier concentration
D.None of the above

Answer:C.Carrier concentration

Ques.24. In Hall effect, the output voltage produced across the crystal is due to

A.Drop across the crystal is due to the current passed through it

B.Induced voltage by the applied magnetic field
C.Movement of charge carriers towards one end
D.All of the above

Answer:C.Movement of charge carriers towards one end

Ques.25. Hall effect can be used to measure

A.Magnetic field intensity

B.Carrier concentration
C.Both (a) and (b)
D.Electric field intensity

Answer:A.Magnetic field intensity

Ques.26. When PN junction is in forward bias, by increasing the battery voltage

A.Circuit resistance increases

B.Current through P-N junction increases
C.Current through P-N junction decreases
D.None of the above happens

Answer:B.Current through P-N junction increases

Ques.27. When a PN junction is reverse-biased

A.Holes and electrons tend to concentrate towards the junction

B.The barrier tends to break down
C.Holes and electrons tend to move away from the junction
D.None of the above

Answer:C.Holes and electrons tend to move away from the junction

Ques.28. In a PN junction when the applied voltage overcomes the ........ potential,
the diode current is large, which is known as .............

A.Depletion, negative bias

B.Reverse, reverse bias
C.Resistance, reverse bias
D.Barrier, forward bias

Answer:D.Barrier, forward bias

Ques.29. A PN junction is said to be forward biased when

A.Positive terminal of the battery is connected to P-side and the negative side to the
N-side
B.Junction is earthed
C.N-side is connected directly to the p-side
D.Positive terminal of the battery is connected to N-side and the negative side to the
P-side

Answer: A.Positive terminal of the battery is connected to P-side and the negative
side to the N-side

Ques.30.. A PN junction

A.Has low resistance in forward as well as reverse directions

B.Has high resistance in forward as well as reverse directions
C.Conducts in forward direction only
D.Conducts in reverse direction only

Answer:C.Conducts in forward direction only

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