TLP521-1,TLP521-2,TLP521-4

TOSHIBA Photocoupler IRED & Photo-Transistor

TLP521-1, TLP521-2, TLP521-4

Unit: mm

Programmable Controllers
AC/DC-Input Module
Solid State Relay

The TOSHIBA TLP521-1, -2 and -4 consist of a photo-transistor optically

coupled to an infrared emitting diode.
The TLP521-2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP521-4 provides four isolated channels in a sixteen
plastic DIP package.
TOSHIBA 11-5B2
• Collector-emitter voltage: 55 V (min)
Weight: 0.26 g (typ.)
• Current transfer ratio: 50 % (min)
Rank GB: 100 % (min)
• Isolation voltage: 2500 Vrms (min)
• UL-recognized: UL 1577, File No.E67349
• cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349

TOSHIBA 11-10C4
Weight: 0.54 g (typ.)

TOSHIBA 11-20A3
Weight: 1.1 g (typ.)

Start of commercial production

1979-05
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Toshiba Electronic Devices & Storage Corporation
 TLP521-1,TLP521-2,TLP521-4
Pin Configurations (top view)

TLP521-1 TLP521-2 TLP521-4

1 4 1 8 1 16

2 3 2 7 2 15

1 : Anode 3 6 3 14
2 : Cathode
3 : Emitter 4 5 4 13
4 : Collector
1, 3 : Anode 5 12
2, 4 : Cathode
5, 7 : Emitter 6 11
6, 8 : Collector
7 10

8 9

1, 3, 5, 7 : Anode
2, 4, 6, 8 : Cathode
9, 11, 13, 15 : Emitter
10, 12, 14, 16 : Collector

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Toshiba Electronic Devices & Storage Corporation
 TLP521-1,TLP521-2,TLP521-4
Absolute Maximum Ratings (Ta = 25°C)
Rating
Characteristics Symbol TLP521-2 Unit
TLP521-1
TLP521-4
Forward current IF 70 50 mA
Forward current derating ΔIF/°C -0.93 (Ta ≥ 50°C) -0.5 (Ta ≥ 25°C) mA/°C
Pulse forward current
IFP 1 A
(100 μs pulse, 100 pps)
LED

Reverse voltage VR 5 V
Diode power dissipation PD 150 100 mW

Diode power dissipation derating ΔPD/°C -2.0 (Ta ≥ 50°C) -1.0 (Ta ≥ 25°C) mW/°C

Junction temperature Tj 125 °C

Collector-emitter voltage VCEO 55 V
Emitter-collector voltage VECO 7 V
Collector current IC 50 mA
Detector

Collector power dissipation

PC 100 mW
(1 circuit)
Collector power dissipation
ΔPC/°C -1.0 mW/°C
derating (1 circuit) (Ta ≥ 25°C)
Junction temperature Tj 125 °C
Storage temperature range Tstg -55 to 125 °C
Operating temperature range Topr -55 to 100 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total package power dissipation
PT 250 150 mW
(1 circuit)
Total package power dissipation
ΔPT/°C -2.5 -1.5 mW/°C
derating (1 circuit) (Ta ≥ 25°C)
Isolation voltage
BVS 2500 Vrms
(AC, 60 s, R.H.≤ 60 %) (Note 1)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.

Recommended Operating Conditions

Characteristics Symbol Min Typ. Max Unit

Supply voltage VCC ― 5 24 V

Forward current IF ― 16 25 mA
Collector current IC ― 1 10 mA
Operating temperature Topr -25 ― 85 °C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.

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 TLP521-1,TLP521-2,TLP521-4
Current transfer ratio
Current Transfer Ratio (%)
Classi- (IC/IF)
Marking Of
Type fication IF = 5mA, VCE = 5V, Ta = 25°C Classification
(Note 1)
Min Max

Blank 50 600 Blank, Y■, YE, G, G■, GR, B, BL, GB

Rank Y 50 150 YE, Y■
Rank GR 100 300 GR, G, G■
Rank BL 200 600 BL, B
TLP521-1 Rank GB 100 600 GB, GR, G, G■, BL, B
Rank YH 75 150 Y■
Rank GRL 100 200 G
Rank GRH 150 300 G■
Rank BLL 200 600 B
Blank 50 600 Blank, GR, BL, GB
Rank GB 100 600 GB, GR, BL
TLP521-2
Rank GR 100 300 GR
Rank BL 200 600 BL
Blank 50 600 Blank, GB
TLP521-4
Rank GB 100 600 GB

Note 1: Ex. rank GB: TLP521-1 (GB)

Note: Application type name for certification test, please use standard product type name, i.e.
TLP521-1 (GB): TLP521-1, TLP521-2 (GB): TLP521-2

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 TLP521-1,TLP521-2,TLP521-4
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V

LED

Reverse current IR VR = 5 V — — 10 μA
Capacitance CT V = 0 V, f = 1 MHz — 30 — pF
Collector-emitter breakdown voltage V(BR)CEO IC = 0.5 mA 55 — — V
Emitter-collector breakdown voltage V(BR)ECO IE = 0.1 mA 7 — — V
Detector

VCE = 24 V — 10 100 nA
Collector dark current ICEO
VCE = 24 V, Ta = 85 °C — 2 50 μA
Capacitance
CCE V = 0 V, f = 1 MHz — 10 — pF
(collector to emitter)

Coupled Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

IF = 5 mA, VCE = 5 V 50 — 600

Current transfer ratio IC/IF %
Rank GB 100 — 600

IF = 1 mA, VCE = 0.4 V — 60 —

Saturated CTR IC/IF(sat) %
Rank GB 30 — —

IC = 2.4 mA, IF = 8 mA — — 0.4

Collector-emitter — 0.2 —
VCE(sat) IC = 0.2 mA, IF = 1 mA V
saturation voltage
Rank GB — — 0.4

Isolation Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Capacitance
CS VS = 0 V, f = 1 MHz — 0.8 — pF
(input to output)
Isolation resistance RS VS = 500 V, R.H.≤ 60 % 5×1010 1014 — Ω

Isolation voltage BVS AC, 60 s 2500 — — Vrms

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 TLP521-1,TLP521-2,TLP521-4
Switching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Rise time tr — 2 —
Fall time tf VCC = 10 V — 3 —
IC = 2 mA μs
Turn-on time ton RL = 100 Ω — 3 —
Turn-off time toff — 3 —
Turn-on time tON — 2 —
RL = 1.9 kΩ (Fig.1)
Storage time ts — 15 — μs
VCC = 5 V, IF = 16 mA
Turn-off time tOFF — 25 —

Fig.1 : SWITCHING TIME TEST CIRCUIT

IF
IF VCC
RL tS VCC
VCE 4.5V
VCE 0.5V

tON tOFF

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 TLP521-1,TLP521-2,TLP521-4

IF – Ta TLP521-2
TLP521-1
TLP521-4 IF – Ta
100 100

80 80
Allowable forward current

Allowable forward current

60
IF (mA)

60

IF (mA)
40 40

20 20

0 0
-20 0 20 40 60 80 100 -20 0 20 40 60 80 100

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

TLP521-2
TLP521-1 PC – Ta TLP521-4 PC – Ta
240 120

200 Allowable collector power 100

dissipation PC (mW)
Allowable collector power
dissipation PC (mW)

160 80

120 60

80 40

20
40

0 0
-20 0 20 40 60 80 100 -20 0 20 40 60 80 100

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

TLP521-2
TLP521-1 IFP – DR TLP521-4 IFP – DR
3000 3000
Pulse width ≤ 100μs Pulse width ≤ 100μs
Ta = 25°C Ta = 25°C
1000 1000
Allowable pulse forward

Allowable pulse forward

current IFP (mA)

current IFP (mA)

500 500
300 300

100 100

50 50
30 30

10 10
10-3 10-2 10-1 100 10-3 10-2 10-1 100

Duty cycle ratio DR Duty cycle ratio DR

NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.

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IF – VF ΔVF/ΔTa – IF
100
Ta=25°C
-2.8
50

coefficient ΔVF/ΔTa (mV/°C)

30

Forward voltage temperature

-2.4
(mA)

10
-2.0
Forward current IF

5
3
-1.6

1 -1.2
0.5
0.3 -0.8

0.1 -0.4
0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 0.3 1 3 10 30

Forward voltage VF (V) Forward current IF (mA)

IFP – VFP ICEO – Ta

1000
Pulse width ≤10μs 1
10
500 Repetitive frequency =100Hz Collector dark current ICEO (μA) 10V
300 Ta = 25°C 5V
(mA)

VCE=24V
100
IFP

100

50 10-1
Pulse forward current

30

10-2
10

5
10-3
3

1 10-4
0 0.4 0.8 1.2 1.6 2.0 2.4 0 40 80 120 160

Pulse forward voltage VFP (V) Ambient temperature Ta (°C)

IC – VCE IC – VCE
80
Ta=25°C Ta=25°C
50mA 40mA
25
30mA
(mA)

(mA)

60 20 20mA

50mA
IC

IC

30mA
15
Collector current

10mA
Collector current

20mA
40
15mA
10 5mA
10mA PC(MAX.)
20
IF=5mA 5
IF=2mA

0 0
0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.

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IC – IF IC/IF – IF
100 500
Ta = 25°C
VCE=5V 300 Sample A
50
VCE=0.4V
30

Current transfer ratio

100

IC /IF (%)
Sample B
10 50
(mA)

Sample A
30
5 Ta = 25°C
IC

VCE=5V
3
VCE=0.4V
Collector current

Sample B 10

1 5
0.3 1 3 10 30 100

0.5 Forward current IF (mA)

0.3
VCE(sat) – Ta
0.20
IF = 5mA
0.1
IC = 1mA

Collector-emitter saturation
0.16

voltage VCE(sat) (V)

0.05

0.03
0.3 1 3 10 30 100 0.12
Forward current IF (mA)
0.08

0.04

0
-20 0 20 40 60 80 100

Ambient temperature Ta (°C)

IC – Ta
100
VCE = 5V Switching Time - RL
25mA
1000
50 Ta = 25°C
30 500 IF = 16mA
10mA
VCC= 5V
300

5mA
IC (mA)

10 tOFF
100
(μs)

5
tS
Collector current

50
Switching time

3
30

1mA
1
10

0.5 IF = 0.5mA 5

0.3 3 tON

0.1 1
-20 0 20 40 60 80 100 1 3 10 30 100 300

Ambient temperature Ta (°C) Load resistance RL (kΩ)

NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.

© 2019 9 2019-06-24
Toshiba Electronic Devices & Storage Corporation
 TLP521-1,TLP521-2,TLP521-4
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Hardware, software and systems described in this document are collectively referred to as “Product”.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
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