Abstract

In most applications, a system is in need of a switch to be able to work correctly. Since there is
no ideal switches, most of the time, the component chosen for this task is a MOSFET. A MOSFET
usually needs a gate driver to do the on/off operation at the desired frequency. For high
frequencies, MOSFETs require a gate drive circuit to translate the on/off signals from an analog
or digital controller into the power signals necessary to control the MOSFET. The main purpose
of this paper is to demonstrate a systematic approach to design high performance gate drive
circuits for high speed switching applications such as power conversion applications.

Introduction
A MOSFET is an acronym for metal-oxide semiconductor field-effect transistor. It is a special
type of field-effect transistor (FET) and is the key component in high frequency, high efficiency
switching applications across the electronics industry. A MOSFET is a voltage controlled device.
It has four terminals: a gate, a drain, a source and bulk.
The source and drain are the terminals through which the current flows. The gate and bulk
voltages control the current. There needs to be a certain gate-to-source voltage, called
threshold voltage, in order for the MOSFET to turn on.

However the isolated gate-electrode of the MOSFET forms a capacitor, called gate capacitor,
which must be charged or discharged each time the MOSFET is switched on or off respectively .
As a transistor requires a particular gate voltage in order to switch on, the gate capacitor must
be charged to at least the required gate voltage for the transistor to be switched on. Similarly,
to switch the transistor off, this charge must be dissipated meaning that the gate capacitor
must be discharged. This is why a gate driver is usually needed, especially for high frequencies.
A gate driver is a power amplifier that accepts a low-power input from a controller IC and
produces a highcurrent drive input for the gate of a high-power transistor such as a power
MOSFET.
Gate Driver
A MOSFET driver IC translates TTL or CMOS logical signals, to a higher voltage and higher
current, with the goal of rapidly and completely switching the gate of a MOSFET. An output pin
of a microcontroller is usually adequate to drive a small-signal logic level MOSFET. However
driving larger MOSFETs is a different story. Large MOSFETs have higher gate capacitance. Digital
signals are meant to drive small loads (on the order of 10-100pF). This is much less than the
many MOSFETs, which can be in the thousands of pF.

Also these MOSFETs have a higher gate voltage. A 3.3V or 5V signal, which is the maximum of a
pulse modulated signal delivered by a microcontroller, is often not enough for the MOSFET.
Usually 8-12V is required to fully turn on the MOSFET. There is also a third issue: a switching
MOSFET can cause a back-current from the gate back to the driving circuit. MOSFET drivers are
designed to handle this back current.

When choosing a gate driver, its output voltage capability has to be match the turn on voltage
of the MOSFET.
Conclusion
In conclusion, a switch in power conversion circuit has to be composed of a MOSFET and a gate
driver. The MOSFET has to be chosen such that it can operate in the circuit and the losses are
minimal. A gate driver has to be used to rapidly and completely switch the gate of the MOSFET.
A heat sink should be if the temperature in the system exceeds the maximum junction
temperature specified by the manufacturer.

The simulation