FSX017LG/001

FSX017X/001
GaAs FET

DESCRIPTION
The FSX017/001 Chip and FSX017LG/001 packaged devices are GaAs
MESFETs for use as the FET front end of an optical receiver in high speed
lightwave communication systems. The N-channel design with 0.5 micron
gate length, and high speed Schottky-Barrier gate FET combines high
transconductance, low gate capacitance and extremely low leakage current;
all important factors in achieving low noise preamplification. The nitride
passivation and gold metallization for this device assures superior lifetime
performance and reliability.

FEATURES
• High Transconductance
• Low Leakage Current
• Low Gate Capacitance
• Gold Bonding System
• Proven Reliability

ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)

Datasheet.Live
Item

Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Symbol

VDS
VGS
PT
Conditions Ratings

12
-5
1.0
Unit

V
V
mW
Storage Temperature Tstg -65 to 175 °C
Channel Temperature Tch +175 °C
Thermal Resistance Rth Channel to Case 150 °C/W

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Limits
Item Symbol Conditions Unit
Min. Min. Max.
Drain Current IDSS VDS=3V, VGS=0V 35 55 75 mA

Transconductance gm VDS=3V, IDS=10mA 28 40 - mS

Pinch-off Voltage Vp VDS=3V, IDS=1mA -0.7 -1.2 -1.7 V

Gate-Source Leakage Current IGSO VGS=-2V - 20 40 nA

VDS=3V FSX017X/001 - 0.35 -

Gate-Source Capacitance CGS IDS=10mA pF
FSX017LG/001 - 0.55 -

Gate-Drain Capacitance CGD VDS=3V, IDS=10mA - 0.03 - pF

Edition 1.3
October 2004
1
FSX017LG/001
FSX017X/001
GaAs FET

Gate-Source Leakage Current

Drain Current vs. Drain-Source Current vs. Gate-Source Voltage

Gate-Source Leakage Current (nA)

60 25
VGS=0
Drain Current (mA)

50 20
VGS=-0.25
40
15
30 VGS=-0.5
10
20
VGS=-0.75
5
10 VGS=-1.0
VGS=-1.25
0
0 0 0.5 1.0 1.5 2.0 2.5
0 2 4 6 8 10 12
Drain-Source Voltage (V) Gate-Source Voltage (V)

Gate-Source Capacitance vs. Drain Current Transconductance vs. Gate-Source Voltage

0.7 70
FSX017LG/001 VDS=3V
VDS=3V
Gate-Source Capacitance (pF)

60
0.6
Transconductance (mS)

50

40
0.5
FSX017X/001 30

0.4
20

10
0.3
0 10 20 30 40 50
0
Drain Current (mA) -1.2 -0.8 -0.4 0

Gate-Source Voltage (V)

2
 FSX017LG/001
FSX017X/001
GaAs FET
BONDING PROCEDURE FOR FET CHIPs

Caution must be excercised to prevent static build up by proper grounding of all equipment and per-
sonnel. All operations must be performed in a clean, dust-free and dry environment.

1. Storage Condition: Store in a clean, dry nitrogen environment.

2. Die-Attach
2.1 The die-attach station must have an accurate temperature control, and an inert
forming gas should be used.
2.2 Chips should be kept at room temperature, except during die-attach.
2.3 Place package or carrier on the heated stage.
2.4 Place the solder at the position where the chip will be bonded.
2.5 Lightly grasp the chip edges using tweezers and scrub the die onto the Au-Sn
solder preform. The die attach conditions are: 300 to 310°C for 30 to 60 seconds.
The Au-Sn(80-20) solder preform volume should be about 3.2x10-3 mm3 for FSX017/001.

3. Wire Bonding
3.1 Bonding Condition
The bonder must be properly grounded. Wire bonding should be performed with a
thermal compression bonder using 0.7 to 1.0 mil diameter, half hard, 3-8%
elongation gold wire.
3.2 Wire Layout
The wire bonding should be performed as shown in the following example.

Bonding Diagram Chip Outline

FSX017X/001

420±20

100
(Unit: µm)

Drain
100

Drain
450±20

Source Source
200

Source Source
100

Gate
Gate

100 100 100

Die Thickness: 100±20µm

3
FSX017LG/001
FSX017X/001
GaAs FET

Case Style "LG"

Metal-Ceramic Package

2 MIN. 2 MIN.
(0.079) (0.079)

(0.079)
2 MIN.
1.78±0.15

(0.039)
(0.07)
1.0

4 2

(0.079)
2 MIN.
3

0.5
(0.02)

1.78±0.15
(0.07)
1.3 Max

Gold Plated Leads

(0.051)

1: Gate
2: Source
3: Drain
4: Source
(0.004)
0.1

Unit: mm (Inches)

For further information please contact: CAUTION

Eudyna Devices USA Inc. Eudyna Devices Inc. products contain gallium arsenide
2355 Zanker Rd. (GaAs) which can be hazardous to the human body and the environment.
San Jose, CA 95131-1138, U.S.A. For safety, observe the following procedures:
TEL: (408) 232-9500
FAX: (408) 428-9111
• Do not put this product into the mouth.
www.us.eudyna.com
• Do not alter the form of this product into a gas, powder, or liquid
Eudyna Devices Europe Ltd. through burning, crushing, or chemical processing as these by-products
Network House are dangerous to the human body if inhaled, ingested, or swallowed.
Norreys Drive • Observe government laws and company regulations when discarding this
Maidenhead, Berkshire SL6 4FJ product. This product must be discarded in accordance with methods
United Kingdom specified by applicable hazardous waste procedures.

TEL: +44 (0) 1628 504800

Eudyna Devices Inc. reserves the right to change products and specifications
FAX: +44 (0) 1628 504888 without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch © 2004 Eudyna Devices USA Inc.
Rm. 1101, Ocean Centre, 5 Canton Rd. Printed in U.S.A.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170