Вы находитесь на странице: 1из 16

ResonantSwitchingSeries

ReverseconductingIGBTwithmonolithicbodydiode

IHW20N120R3

Datasheet

IndustrialPowerControl
IHW20N120R3

ResonantSwitchingSeries

ReverseconductingIGBTwithmonolithicbodydiode

Features: C

•Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutationonly
•TRENCHSTOPTMtechnologyapplicationsoffers:
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior G
-lowVCEsat E
-easyparallelswitchingcapabilityduetopositive
temperaturecoefficientinVCEsat
•LowEMI
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications:

•Inductivecooking
•Inverterizedmicrowaveovens
•Resonantconverters G
•Softswitchingapplications C
E

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IHW20N120R3 1200V 20A 1.48V 175°C H20R1203 PG-TO247-3

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.7


www.infineon.com 2019-09-19
IHW20N120R3

ResonantSwitchingSeries

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Datasheet 3 V2.7
2019-09-19
IHW20N120R3

ResonantSwitchingSeries

MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value Unit


Collector-emitter voltage VCE 1200 V
DCcollectorcurrent,limitedbyTvjmax
Tc=25°C IC 40.0 A
Tc=100°C 20.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 60.0 A
Non repetitive peak collector current 1)
ICSM 200 A
TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 60.0 A
Diodeforwardcurrent,limitedbyTvjmax
Tc=25°C IF 40.0 A
Tc=100°C 20.0
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A
Gate-emitter voltage ±20
VGE V
TransientGate-emittervoltage(tp≤10µs,D<0.010) ±25
PowerdissipationTc=25°C 310.0
Ptot W
PowerdissipationTc=100°C 155.0
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+175 °C
Soldering temperature,
°C
wave soldering 1.6mm (0.063in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3

ThermalResistance
Value
Parameter Symbol Conditions Unit
min. typ. max.
RthCharacteristics
IGBT thermal resistance,
Rth(j-c) - - 0.48 K/W
junction - case
Diode thermal resistance,
Rth(j-c) - - 0.48 K/W
junction - case
Thermal resistance
Rth(j-a) - - 40 K/W
junction - ambient

1)
capacitor charging saturation current limited by Tvjmax < 175°C and tp < 3µs
Datasheet 4 V2.7
2019-09-19
IHW20N120R3

ResonantSwitchingSeries

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V
VGE=15.0V,IC=20.0A
Tvj=25°C - 1.48 1.70
Collector-emitter saturation voltage VCEsat V
Tvj=125°C - 1.70 -
Tvj=175°C - 1.80 -
VGE=0V,IF=20.0A
Tvj=25°C - 1.55 1.75
Diode forward voltage VF V
Tvj=125°C - 1.70 -
Tvj=175°C - 1.80 -
Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 5.1 5.8 6.4 V
VCE=1200V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 100 µA
Tvj=175°C - - 2500
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=20.0A - 18.3 - S
Integrated gate resistor rG none Ω

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 1503 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 50 - pF
Reverse transfer capacitance Cres - 42 -
VCC=960V,IC=20.0A,
Gate charge QG - 211.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-off delay time td(off) Tvj=25°C, - 387 - ns
Fall time tf VCC=600V,IC=20.0A, - 25 - ns
VGE=0.0/15.0V,
Turn-off energy Eoff RG(on)=15.0Ω,RG(off)=15.0Ω, - 0.95 - mJ
Lσ=180nH,Cσ=39pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.

Datasheet 5 V2.7
2019-09-19
IHW20N120R3

ResonantSwitchingSeries

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175°C
Turn-off delay time td(off) Tvj=175°C, - 454 - ns
Fall time tf VCC=600V,IC=20.0A, - 84 - ns
VGE=0.0/15.0V,
Turn-off energy Eoff RG(on)=15.0Ω,RG(off)=15.0Ω, - 1.65 - mJ
Lσ=180nH,Cσ=39pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.

Datasheet 6 V2.7
2019-09-19
IHW20N120R3

ResonantSwitchingSeries

100

60

tp=1µs
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
10 5µs
TC=80°
20µs
40 TC=110°
100µs

1ms

10ms
1
DC
20

0 0.1
0.01 0.1 1 10 100 1 10 100 1000
f,SWITCHINGFREQUENCY[kHz] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching Figure 2. Forwardbiassafeoperatingarea
frequency (D=0,TC=25°C,Tj≤175°C;VGE=15V)
(Tj≤175°C,D=0.5,VCE=600V,VGE=0/15V,
RG=15Ω)

350

300
40
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]

250

200

150
20

100

50

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C] TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase Figure 4. Collectorcurrentasafunctionofcase
temperature temperature
(Tj≤175°C) (VGE≥15V,Tj≤175°C)

Datasheet 7 V2.7
2019-09-19
IHW20N120R3

ResonantSwitchingSeries

60 60

VGE=20V VGE=20V
50 50
17V 17V

15V 15V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
40 13V 40 13V

11V 11V

9V 9V
30 30
7V 7V

5V 5V

20 20

10 10

0 0
0 1 2 3 0 1 2 3 4
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaloutputcharacteristic
(Tj=25°C) (Tj=175°C)

3.0
25°C IC=10A
Tj=175°C IC=20A
IC=40A
VCE(sat),COLLECTOR-EMITTERSATURATION[V]

60

2.5
IC,COLLECTORCURRENT[A]

50

40

2.0

30

20
1.5

10

0 1.0
0 2 4 6 8 10 12 0 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic Figure 8. Typicalcollector-emittersaturationvoltageas
(VCE=20V) afunctionofjunctiontemperature
(VGE=15V)

Datasheet 8 V2.7
2019-09-19
IHW20N120R3

ResonantSwitchingSeries

td(off) td(off)
tf tf
1000 1000
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
100 100

10 10
0 10 20 30 40 10 20 30 40 50
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[Ω]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistance
(ind.load,Tj=175°C,VCE=600V,VGE=0/15V, (ind.load,Tj=175°C,VCE=600V,VGE=0/15V,
RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E) IC=20A,testcircuitinFig.E)

td(off) typ.
1000 tf min.
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

7 max.

6
t,SWITCHINGTIMES[ns]

5
100

10
2

1 0
25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
Tj,JUNCTIONTEMPERATURE[°C] Tj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof Figure 12. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(ind.load,VCE=600V,VGE=0/15V,IC=20A, (IC=0.5mA)
RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E)
Datasheet 9 V2.7
2019-09-19
IHW20N120R3

ResonantSwitchingSeries

3
3 Eoff Eoff
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
2
2

1
1

0 0
0 10 20 30 40 10 20 30 40 50
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[Ω]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistance
(ind.load,Tj=175°C,VCE=600V,VGE=0/15V, (ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
RG(on)=15,RG(off)=15Ω,testcircuitinFig.E) test circuit in Fig. E)

2 2.2
Eoff Eoff

2.0
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]

1.8

1.6

1.4

0 1.2
25 50 75 100 125 150 175 400 500 600 700 800 900 1000
Tj,JUNCTIONTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(indload,VCE=600V,VGE=0/15V,IC=20A, (ind.load,Tj=175°C,VGE=150/V,IC=20A,
RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E) RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E)
Datasheet 10 V2.7
2019-09-19
IHW20N120R3

ResonantSwitchingSeries

15.0
240V
960V

12.5
VGE,GATE-EMITTERVOLTAGE[V]

1000
Cies
Coes
10.0

C,CAPACITANCE[pF]
Cres

7.5

100
5.0

2.5

0.0 10
0 40 80 120 160 200 0 10 20 30
QGE,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalgatecharge Figure 18. Typicalcapacitanceasafunctionof
(IC=20A) collector-emittervoltage
(VGE=0V,f=1MHz)

1 1
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

D=0.5 D=0.5
0.2 0.2

0.1 0.1 0.1 0.1


0.05 0.05
0.02 0.02
0.01 0.01
single pulse single pulse

0.01 0.01

i: 1 2 3 4 5 6 i: 1 2 3 4 5 6
ri[K/W]: 9.8E-3 0.01407993 0.0698 0.1158 0.1569 0.1137 ri[K/W]: 9.8E-3 0.0141 0.0698 0.1158 0.1569 0.1137
τi[s]: 2.8E-5 4.7E-5 2.0E-4 1.2E-3 9.9E-3 0.08835259 τi[s]: 2.8E-5 4.7E-5 2.0E-4 1.2E-3 9.9E-3 0.08835259

0.001 0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s] tp,PULSEWIDTH[s]
Figure 19. IGBTtransientthermalimpedance Figure 20. Diodetransientthermalimpedanceasa
(D=tp/T) functionofpulsewidth
(D=tp/T)

Datasheet 11 V2.7
2019-09-19
IHW20N120R3

ResonantSwitchingSeries

40 3
Tj=25°C IF=10A
Tj=175°C IF=20A
IF=40A

30

VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]

20

10

0 0
0 1 2 3 0 25 50 75 100 125 150 175
VF,FORWARDVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 21. Typicaldiodeforwardcurrentasafunction Figure 22. Typicaldiodeforwardvoltageasafunction
offorwardvoltage ofjunctiontemperature

Datasheet 12 V2.7
2019-09-19
IHW20N120R3

ResonantSwitchingSeries

Package Drawing PG-TO247-3

Datasheet 13 V2.7
2019-09-19
IHW20N120R3

ResonantSwitchingSeries

Testing Conditions

VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b

a b
10% VGE
t

IC(t) Qa Qb

dI

90% IC
90% IC

10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)

td(off) tf td(on) tr
t

Figure A.
VGE(t)
90% VGE
Figure D.

10% VGE
t

IC(t)

CC

2% IC
t

VCE(t) Figure E. Dynamic test circuit


Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
t2 t4
(only for ZVT switching)
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCE
t
t1 t2 t3 t4

Figure B.

Datasheet 14 V2.7
2019-09-19
IHW20N120R3

ResonantSwitchingSeries

RevisionHistory
IHW20N120R3

Revision:2019-09-19,Rev.2.7
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2008-05-06 -
1.2 2008-07-11 -
2.3 2008-07-29 -
2.4 2009-04-01 -
2.5 2013-02-12 Layout change
2.6 2015-01-26 Minor changes
2.7 2019-09-19 additional parameter in maximum ratings table: non repetitive peak collector current

Datasheet 15 V2.7
2019-09-19
Trademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.





Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2019.
AllRightsReserved.

ImportantNotice
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany
informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand
liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird
party.

Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis
documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof
theproductofInfineonTechnologiesincustomer’sapplications.

Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof
customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe
completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.

Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest
InfineonTechnologiesoffice(www.infineon.com).

PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive
ElectronicsCouncil.

Warnings
Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion
pleasecontactyournearestInfineonTechnologiesoffice.

ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized
representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea
failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.

Оценить