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2 drain
g
3 source
4 drain (tab) s
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 55 V
VDGR Drain-gate voltage RGS = 20 kΩ - 55 V
±VGS Gate-source voltage - - 16 V
ID Drain current (DC) Tsp = 25 ˚C - 10.7 A
ID Drain current (DC) On PCB in Fig.19 - 5 A
Tamb = 25 ˚C
ID Drain current (DC) On PCB in Fig.19 - 3.1 A
Tamb = 100 ˚C
IDM Drain current (pulse peak value) Tsp = 25 ˚C - 40 A
Ptot Total power dissipation Tsp = 25 ˚C - 10.7 W
Ptot Total power dissipation On PCB in Fig.19 - 1.8 W
Tamb = 25 ˚C
Tstg, Tj Storage & operating temperature - - 55 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-sp From junction to solder point Mounted on any PCB 12 15 K/W
Rth j-amb From junction to ambient Mounted on PCB of Fig.18 - 70 K/W
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA 55 - - V
voltage Tj = -55˚C 50 - - V
VGS(TO) Gate threshold voltage VDS = VGS; ID = 1 mA 2.0 3.0 4.0 V
Tj = 150˚C 1.2 - - V
Tj = -55˚C - - 4.4 V
IDSS Zero gate voltage drain current VDS = 55 V; VGS = 0 V; - 0.05 10 µA
Tj = 150˚C - - 100 µA
IGSS Gate source leakage current VGS = ±10 V - 0.04 1 µA
Tj = 150˚C - - 10 µA
±V(BR)GSS Gate source breakdown voltage IG = ±1 mA 16 - - V
RDS(ON) Drain-source on-state VGS = 10 V; ID = 5 A - 30 40 mΩ
resistance Tj = 150˚C - - 74 mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
gfs Forward transconductance VDS = 25 V; ID = 5 A; Tj = 25˚C 3 12 - S
Ciss Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 700 880 pF
Coss Output capacitance - 200 240 pF
Crss Feedback capacitance - 100 140 pF
td on Turn-on delay time VDD = 30 V; ID = 9 A; - 15 23 ns
tr Turn-on rise time VGS = 10 V; Rg = 10 Ω - 50 75 ns
td off Turn-off delay time - 33 50 ns
tf Turn-off fall time Tj = 25˚C - 20 30 ns
20 16
16 VGS/V = 6.0
ID/A 8.0 gfs/S
6.5
14
10
15 12
5.5 10
10
8
5.0 6
5
4
4.5
4.0 2
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
0
0 2 4 6 8 10 ID/A
7 1.5
40
8
30 10
1
20
10
0.5
0 -100 -50 0 50 100 150 200
0 5 10 ID/A 15 20 25 Tmb / degC
Fig.6. Typical on-state resistance, Tj = 25 ˚C. Fig.9. Normalised drain-source on-state resistance.
RDS(ON) = f(ID); parameter VGS a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 5 A; VGS = 10 V
20 VGS(TO) / V BUK78xx-55
5
ID/A
max.
4
15
typ.
3
10 min.
2
Tj/C = 150 25
5 1
0
0 -100 -50 0 50 100 150 200
0 1 2 3 VGS/V 4 5 6 7 Tj / C
Sub-Threshold Conduction 20
1E-01 IF/A
1E-02 15
Tj/C = 150 25
2% typ 98%
1E-03
10
1E-04
5
1E-05
0
1E-06 0 0.2 0.4 0.6 0.8 1 1.2 1.4
0 1 2 3 4 5 VSDS/V
1.4 WDSS%
120
110
1.2
100
1.0 90
Thousands pF
80
0.8 70
Ciss 60
0.6 50
40
0.4 30
20
0.2 10
Coss
Crss 0
0 20 40 60 80 100 120 140
0.01 0.1 1 VDS/V 10 100 Tmb / C
Fig.12. Typical capacitances, Ciss, Coss, Crss. Fig.15. Normalised avalanche energy rating.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz WDSS% = f(Tsp); conditions: ID = 3.6 A
12
VGS/V VDD
10 +
L
8 VDS
6
VDS = 14V VDS = 44V
VGS
-
-ID/100
0 T.U.T.
4
R 01
2 RGS
shunt
0
0 5 10 QG/NC 15 20
Fig.16. Avalanche energy test circuit.
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 9 A; parameter VDS WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD )
VDD
+
RD
VDS
VGS
-
RG
0 T.U.T.
36
18
60
4.6 4.5
9
10
15
50
Fig.18. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick).
MECHANICAL DATA
Dimensions in mm 6.7
6.3
Net Mass: 0.11 g 3.1
B
0.32
0.2 M A
0.24 2.9
4 A
0.10
0.02 3.7 7.3
3.3 6.7
16 13
max
1 2 3
10
max
1.8 1.05 2.3 0.80
max 0.1 M B
0.85 0.60
(4x)
4.6
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
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The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.