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May 2010
FGH40N60SMDF
600V, 40A Field Stop IGBT
Features General Description
• Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchild’s new series
• Positive Temperaure Co-efficient for easy parallel operating of Field Stop IGBTs offer the optimum performance for Solar
• High current capability Inverter, UPS, SMPS, IH and PFC applications where low con-
duction and switching losses are essential.
• Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A
• High input impedance
• Fast switching
• Tighten Parameter Distribution
• RoHS compliant
Applications
• Solar Inverter, UPS, SMPS, PFC
• Induction Heating
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Off Characteristics
BV CES Collector to Emitter Breakdown Voltage V GE = 0V, IC = 250mA 600 - - V
DBVCES Temperature Coefficient of Breakdown
DTJ Voltage
V GE = 0V, IC = 250mA - 0.6 - V/oC
On Characteristics
V GE(th) G-E Threshold Voltage IC = 250mA, V CE = VGE 3.5 4.5 6.0 V
IC = 40A, VGE = 15V - 1.9 2.5 V
V CE(sat) Collector to Emitter Saturation Voltage
IC = 40A, VGE = 15V,
- 2.1 - V
TC = 175oC
Dynamic Characteristics
C ies Input Capacitance - 1880 - pF
C oes Output Capacitance V CE = 30V, V GE = 0V, - 180 - pF
f = 1MHz
C res Reverse Transfer Capacitance - 50 - pF
Switching Characteristics
td(on) Turn-On Delay Time - 12 16 ns
tr Rise Time - 20 28 ns
td(off) Turn-Off Delay Time V CC = 400V, IC = 40A, - 92 120 ns
tf Fall Time RG = 6W, VGE = 15V, - 13 17 ns
Inductive Load, TC = 25oC
E on Turn-On Switching Loss - 1.3 2.0 mJ
E off Turn-Off Switching Loss - 0.26 0.34 mJ
E ts Total Switching Loss - 1.56 2.34 mJ
td(on) Turn-On Delay Time - 15 - ns
tr Rise Time - 22 - ns
td(off) Turn-Off Delay Time V CC = 400V, IC = 40A, - 116 - ns
tf Fall Time RG = 6W, VGE = 15V, - 16 - ns
Inductive Load, TC = 175oC
E on Turn-On Switching Loss - 2.1 - mJ
E off Turn-Off Switching Loss - 0.6 - mJ
E ts Total Switching Loss - 2.7 - mJ
60 60
VGE = 8V VGE = 8V
40 40
20 20
0 0
0 2 4 6 0 2 4 6
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]
TC = 25 C 90 T = 175oC
Collector Current, IC [A]
o C
TC = 175 C
80
60 60
40
30
20
0 0
0 1 2 3 4 0 2 4 6 8 10 12
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
3.0
20
Common Emitter Common Emitter
Collector-Emitter Voltage, VCE [V]
VGE = 15V o
Collector-Emitter Voltage, VCE [V]
TC = -40 C
80A
2.5 16
12
2.0
40A 8
1.5 40A
80A
4
IC = 20A IC = 20A
1.0
25 50 75 100 125 150 175 0
o 4 8 12 16 20
Collector-EmitterCase Temperature, TC [ C] Gate-Emitter Voltage, VGE [V]
Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
o
Collector-Emitter Voltage, VCE [V]
TC = 25 C o
TC = 175 C
12 12
8 8
40A
80A 80A
4 4
40A
IC = 20A
IC = 20A
0 0
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]
TC = 25 C
o 12
3000 VCC = 200V
Capacitance [pF]
300V
9
Cies
2000
6
1000 Coes
3
Cres
0 0
0.1 1 10 30 0 40 80 120
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]
10 ms
Switching Time [ns]
10
DC td(on)
10
1
Common Emitter
VCC = 400V, VGE = 15V
*Notes: IC = 40A
0.1 o
1. TC = 25 C o
TC = 25 C
o
2. TJ = 175 C o
TC = 175 C
3. Single Pulse
0.01 1
1 10 100 1000 0 10 20 30 40 50
Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [W]
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
1000 1000
Common Emitter
VGE = 15V, RG = 6W
td(off) o
TC = 25 C
o
TC = 175 C
100 100 tr
tf
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance
1000 5
Eon
td(off)
Switching Time [ns]
100
Switching Loss [mJ]
tf Eoff
Common Emitter
10 Common Emitter VCC = 400V, VGE = 15V
VGE = 15V, RG = 6W IC = 40A
o o
TC = 25 C TC = 25 C
o o
TC = 175 C TC = 175 C
1 0.1
20 30 40 50 60 70 80 0 10 20 30 40 50
Collector Current, IC [A] Gate Resistance, RG [W]
Figure 17. Switching Loss vs. Figure 18. Turn off Switching
Collector Current SOA Characteristics
6 200
100
Eon
Collector Current, IC [A]
Switching Loss [mJ]
10
Eoff
Common Emitter
VGE = 15V, RG = 6W
o
TC = 25 C Safe Operating Area
o o
TC = 175 C VGE = 15V, TC = 175 C
0.1 1
20 30 40 50 60 70 80 1 10 100 1000
Collector Current, IC [A] Collector-Emitter Voltage, VCE [V]
Figure 19. Current Derating Figure 20. Load Current Vs. Frequency
90 120
Common Emitter Square Wave
80 VGE = 15V 110 o
TJ < 175 C, D = 0.5, VCE = 400V
100
70 VGE = 15/0V, RG = 6W
Collector Current, IC [A]
90
o
TC = 175 C 10
o
TC = 75 C
10 1
o
TC = 25 C
0.1
o
TC = 25 C
0.01
o
TC = 25 C
o
TC = 175 C
1 1E-3
0 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 500 600
Forward Voltage, VF [V] VR [V]
350
Reverse Recovery Time, trr [ns]
o o
2250 TC = 175 C TC = 175 C
2000 300
1750 250
1500
200
1250
di/dt = 100A/ms
1000 150
di/dt = 100A/ms
750 di/dt = 200A/ms di/dt = 200A/ms
100
500
50
250
0 0
0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40 45
Forwad Current, IF [A] Forward Current, IF [A]
1
Thermal Response [Zthjc]
0.5
0.1 0.2
0.1
0.05
0.02
0.01 single pulse PDM
0.01
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.001
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]
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Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I47